SiO2脊形条波导热极化引起的电光效应

通过理论模拟对具有上覆盖层的SiO2脊形条波导结构进行了优化,在此基础上利用微电子工艺制作了SiO2脊形波导Mach-Zehnder 型电光调制器,并进行热极化引起的电光和非线性效应的研究.热极化过程大幅增强了样品的电光及非线性效应,二次电光系数由热极化前的1.56×10-22(m/V)2提高到热极化后的8.50×10-22(m/V)2,极化后得到了0.093pm/V的线性电光系数,对热极化的物理机理进行了理论分析.     

低阈值极化电压玻璃光波导电光效应的研究

采用热极化技术对掺锗玻璃条形光波导进行极化,通过光纤连接 (单模) 的Mach Zehnder Interferometer 系统测量条形波导内诱导出的电光效应,系统地研究了大气环境下极化条件(极化温度、极化时间、极化电压)对电光效应的影响.结果表明:在最佳极化条件下(406℃、-2.4 kV、20 min),波导内的电光系数为r_TM=0.059±0.001 pm/V, r_TE=0.053±0.001 pm/V,且波导结构中存在一个较低的阈值极化电压(100 V)和阈值极化温度(80℃),此时在波导样品内仍能被激发出可观察的电光效应;实验还发现采用负极化诱导方式产生的电光系数较正极化提高15%左右.     

低阈值极化电压玻璃光波导电光效应的研究(英文)

采用热极化技术对掺锗玻璃条形光波导进行极化,通过光纤连接(单模)的Mach ZehnderInterferometer系统测量条形波导内诱导出的电光效应,系统地研究了大气环境下极化条件(极化温度、极化时间、极化电压)对电光效应的影响.结果表明:在最佳极化条件下(406℃、-2.4kV、20min),波导内的电光系数为rTM=0.059±0.001pm/V,rTE=0.053±0.001pm/V,且波导结构中存在一个较低的阈值极化电压(100V)和阈值极化温度(80℃),此时在波导样品内仍能被激发出可观察的电光效应;实验还发现采用负极化诱导方式产生的电光系数较正极化提高15%左右.     

采用接触式极化法研制有机聚合物电光光波导调制器

结合器件的整体结构考虑，对接触式极化方法和工艺进行了研究，基于接触式极化法，设计并制作了聚合物电光光波导相位和偏振调制器。通过测量器件的偏振调制特性，在1550nm光波波长下，获得了最大电光系数为llpm／V，电光相位调制器的半波电压为45V。     

M-Z型极化DANS聚合物电光波导强度调制器研究

研究了Mach-Zehnder型极化聚合物电光波导强度调制器的制备工艺.器件采用DANS (4-dimethylamino-4′nitro-stlibene)聚合物为电光波导材料,由电光波导层、上下介质缓冲层、上下金属电极层构成五层波导结构.对五层光波导各层之间的光学、化学以及微加工工艺的相互兼容性进行了深入研究.采用紫外光漂白方法制备出侧壁光滑的条波导,采用钨丝电晕极化方法对DANS聚合物波导进行有效极化,使其具有电光特性.通过优化器件制备工艺,研制出工作波长为1300 nm的M-Z型电光波导强度调制器原型器件.实验测得器件半波电压约为10 V,调制带宽约为1 GHz.     

新型光波导阵列电光快速扫描器的光波导效应

对新型光波导阵列电光快速扫描器中的光波导效应进行了研究,分析了考虑光波导模式效应的光波导阵列电光快速扫描器的扫描特性,指出光波导模式特性主要影响新型光波导电光快速扫描器的扫描范围和效率,并研究了在应用该器件进行光束扫描时的技术要求.     

SiO2波导布拉格器件中声表面波及声光相互作用分析

针对SiO2光波导声光布拉格器件,计算了SiO2非对称平板波导TE模式的横向场分布;给出了SiO2/ZnO/Air层状介质结构的性能方程、运动方程和麦克斯韦方程,推导出这种层状结构的特征方程,并结合所满足的边界条件,得到了各层介质的位移及电磁场分布;计算了声表面波所引起的光学相对介质隔离率张量的变化,最后讨论了声光衍射效率和光场与声场的重叠积分、声功率、声频率、声孔径和光波导参数之间的关系。结果表明,在低频范围内光场与声表面波场重叠良好;低阶模的重叠积分始终大于高阶模重叠积分,最低阶模与声表面波相互作用最强,所需声功率最小;当声功率一定时,增加声孔径可以提高衍射效率。     

二阶非线性光学聚合物光波导与器件的现状与问题

介绍了二阶非线性光学聚合物材料及波导在电光调制方面应用的基本要求、优点和主要进展以及我们实验室的一些结果,文中还简单讨论了目前尚存在的问题和可能的解决途径．     

光折变法制备的As2S8条形波导的光阻断效应

实验研究了As₂S₈薄膜光折变现象.提出并采用紫外光激励的方法试制了As₂S₈条形波导，导模激励显示该波导具有良好的导波特性.在此基础上，考察了As₂S₈条波导的光阻断效应，实现了光-光效应的开关功能. 关键词： 光波导技术 2S₈条形波导')" href="#">As₂S₈条形波导 光阻断效应 光激励法     

SBN:60晶体的电光诱导光波导及其调制器

本文首次报道了在SBN:60(Sr_(0.6)Ba_(0.4)Nb_2O_6)单晶上观察到DC(直流)电光诱导光波导的形成,以及当反转上述DC极性时光由电极间隙下低折射率区折向衬底的现象,并根据上述现象演示了一种不同于以光相位调制为基础的新的低压高调制度的电光光强调制器。     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films

Two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO₂/SiO₂ and SiO₂/ZrO₂ films. To explain the difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films, porous ratio and surface morphology of monolayer SiO₂ and ZrO₂ films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO₂/SiO₂ films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO₂/ZrO₂ films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO₂ layer had diffused through the entire SiO₂ layer. The difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films was influenced by the microstructure of SiO₂ and ZrO₂.     

低成本溶胶-凝胶法制备SiO2/TiO2双层膜的减反射与自清洁性能

将玻璃基底依次在低成本的SiO₂溶胶和TiO₂溶胶中浸渍后,在500 oC下煅烧制备了同时具备减反射与自清洁性能的SiO₂/TiO₂双层膜．该膜的光学性能与结构特征分别通过紫外-可见分光光度计和场发射扫描电镜进行了表征．同时,源于超亲水性和光催化作用的自清洁性能也凸显出来．实验结果表明制备SiO₂/TiO₂双层膜对光的透射率最高可达到95%,同时具备自清洁性能．     

Dielectric properties of barium titanate ceramics modified by SiO2 and by BaO-SiO2

The influence of SiO₂ on the dielectric properties of barium titanate ceramics was investigated. SiO₂ had been doped solely and together with BaO into barium titanate before calcination. X-ray diffraction showed that all the ceramics were of a pure perovskite phase after sintering at 1275 °C for 2 h. For SiO₂-doping, there was about 2.5 °C increase in Curie temperature per molar percentage of doping and the leakage current was obviously increased, especially at low voltages for relatively high doping levels. While for the co-doping of SiO₂ and BaO, there was little change in Curie temperature. The point defects formed through the dopings were proposed responsible for the effects. It was suggested that SiO₂ is important to barium titanate ceramics not only for sintering but also for modifying their properties.     

Preparation and characterization of novel Pd/SiO2 and Ca-Pd/SiO2 egg-shell catalysts with porous hollow silica

Novel egg-shell structured monometallic Pd/SiO₂ and bimetallic Ca-Pd/SiO₂ catalysts were prepared by an impregnation method using porous hollow silica (PHS) as the support and PdCl₂ and Ca(NO₃)₂·4H₂O as the precursors. It was found from transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) that Pd was loaded on PHS with a particle size of 5-12 nm in Pd/SiO₂ samples and the Pd particle size in Ca-Pd/SiO₂ was smaller than that in Pd/SiO₂ since Ca could prevent Pd particles from aggregating. X-ray photoelectron spectroscopy (XPS) analyses exhibited that Pd 3d_5/2 binding energies of Pd/SiO₂ and Ca-Pd/SiO₂ were 0.2 and 0.9 eV lower than that of bulk Pd, respectively, as a result of the shift of the electron cloud from Pd to oxygen in Pd/SiO₂ and to both oxygen and Ca in Ca-Pd/SiO₂. The activity of Ca-Pd/SiO₂ egg-shell catalyst for CO hydrogenation and the selectivity to methanol, with a value of 36.50 mmol_CO mol⁻¹_Pd s⁻¹ and 100%, respectively, were much higher than those of the catalysts prepared with traditional silica gel as the support, owing to the porous core-shell structure of the PHS support.     

Electroluminescence from Si／SiO2 films deposited on p—Si substrates

The structure of Au/Si/SiO₂/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO₂/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO₂ films and of the input electrical power on EL spectra are studied systematically.     

A facile synthesis of monodisperse CoFe2O4/SiO2 nanoparticles

Aminated-CoFe₂O₄/SiO₂ magnetic nanoparticles (NPs) were prepared from primary silica particles using modified StÖber method. By optimizing the preparation conditions, monodisperse CoFe₂O₄/SiO₂ NPs with high amino groups’ density were obtained, which is necessary for enzyme immobilization. TEM confirm that the sample is a core/shell structure. These aminated-CoFe₂O₄/SiO₂ NPs have narrow size distributions with a mean size of about 60 nm. Moreover, the aminated-CoFe₂O₄/SiO₂ NPs can be easily dispersed in aqueous medium. The experimental results also show that the NPs have superparamagnetism, indicating that the aminated-CoFe₂O₄/SiO₂ NPs can be used as an effective carrier for the enzyme immobilization.     

Er3+掺杂SiO2复合的Al2O3粉末结构及光致发光特性

采用溶胶-凝胶(sol-gel)工艺制备0.1 mol% Er³⁺掺杂Al₂O₃体系和SiO₂-Al₂O₃复合体系粉末. 实验结果表明：5 mol%的SiO₂复合加入Al₂O₃抑制γ→θ和θ→α相转变. 掺0.1 mol%Er³⁺:Al₂O₃体系粉末，900℃烧结，在1.47—1.63μm波段内光致发光(PL)谱为中心波长1.53 μm、半高宽56 nm的单一宽峰，1000—1200℃烧结，劈裂为多峰PL谱. 掺0.1 mol%Er³⁺:SiO₂-Al₂O₃复合体系粉末，在高达1200℃烧结，仍保持中心波长1.53 μm的单一宽峰PL谱，由于—OH更完全的脱除，PL强度较900℃烧结Al₂O₃体系，SiO₂-Al₂O₃复合体系均提高1个数量级. 关键词： 2-Al₂O₃复合体系')" href="#">SiO₂-Al₂O₃复合体系 掺铒 溶胶-凝胶工艺 光致发光     

Coupling between Ge-nanocrystals and defects in SiO2

Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO₂ films co-doped with Ge is reported. The PL signal is observed in pure SiO₂, however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO₂ films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO₂ layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO₂ (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO₂ defect.