Anneal temperature dependence of Si/SiO2 superlattices photoluminescence

Photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray reflectometry and high resolution electron microscopy have been used to interpret the photoluminescence properties of annealed (3/19 nm) Si/SiO₂ multilayers grown by reactive magnetron sputtering. The multilayers show an emission in the visible and near-infrared range after heat treatment from 900°C which tends to decrease from 1200°C. Three different origins for the photoluminescence activity have been found. An anneal temperature of 1200°C is necessary to optimise the silicon crystallisation within the silicon sublayers.     

Room temperature visible light emission from Si/SiO2 multilayers: Roles of interface electronic states and silicon phase

We have studied luminescence properties and microstructure of 20 patterns Si/SiO₂ multilayers. The photoluminescence spectra consist of two gaussian bands in the visible-infrared spectral region. It has been demonstrated that the strong PL band is caused by the radiative recombination in the Si/SiO₂ interfaces states, whereas the weaker band originates from radiative recombination in the nanosized Si layers. The peak shift of this latter band shows a discontinuity that corresponds to a crystalline-to-amorphous phase change when the Si layers are thinner than 30 Å. The peak energy as a function of the layer thickness is interpreted using a quantum confinement model in the case of amorphous Si layers.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

Electroluminescence from Si／SiO2 films deposited on p—Si substrates

The structure of Au/Si/SiO₂/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO₂/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO₂ films and of the input electrical power on EL spectra are studied systematically.     

Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface

In this work, anodic porous alumina thin films with pores in the nanometer range are grown on silicon by electrochemistry and are used as masking material for the nanopatterning of the silicon substrate. The pore diameter and density are controlled by the electrochemical process. Through the pores of the alumina film chemical oxidation of the silicon substrate is performed, leading to the formation of regular arrays of well-separated stoichiometric silicon dioxide nanodots on silicon, with a density following the alumina pores density and a diameter adjustable by adjusting the chemical oxidation time. The alumina film is dissolved chemically after the SiO₂ nanodots growth, revealing the arrays of silicon dioxide dots on silicon. In a next step, the nanodots are also removed, leaving a nanopatterned bare silicon surface with regular arrays of nanopits at the footprint of each nanodot. This silicon surface structuring finds interesting applications in nanoelectronics. One such application is in silicon nanocrystals memories, where the structuring of the oxidized silicon surface leads to the growth of discrete silicon nanocrystals of uniform size. In this work, we examine the electrical quality of the Si/SiO₂ interface of a nanostructured oxidized silicon surface fabricated as above and we find that it is appropriate for electronic applications (an interface trap density below 1–3×10¹⁰ eV⁻¹ cm⁻² is obtained, indicative of the high quality of the thermal silicon oxide).     

Study on morphology and photoluminescence of Au/SiO2 nanocomposite films

Au/SiO₂ nanocomposite films were fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering technique and annealing at different temperature for 20 min (mode A) and at 1000 °C for different annealing time (mode B). The nanocomposite films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). SEM results demonstrate that the size of Au crystallites in mode A first increases and then decreases, on increasing annealing temperature, according to the results of XRD spectra. Analysis of PL spectra in mode B shows that the intensity of the emission peak at 440 nm and 523 nm early increases and late decreases, with increasing annealing time at 1000 °C. The origin of the emission peak at around 440 nm was related to the size and quantity of Au particles and one of the emission peak at around 523 nm was related to the nanostructure of films in agreement with SEM imagines. Experimental results indicated that morphology, microstructure and luminescence of Au/SiO₂ nanocomposite films showed close affinity with annealing temperature and annealing time.     

Silicon nanoparticles formation in annealed SiO/SiO2 multilayers

We present a study on amorphous SiO/SiO₂ superlattice performed by grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO₂ superlattices were prepared by high-vacuum evaporation of 3 nm thin films of SiO and SiO₂ (10 layers each) onto Si(1 0 0) substrate. After the deposition, samples were annealed at 1100 °C for 1 h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained. The size of the growing nanoparticles in the direction perpendicular to the film surface is well controlled by the bilayer thickness. However, their size varies more significantly in the direction parallel to the film surface.     

Structural and optical properties of Si/SiO2 multi-quantum wells

Structural and optical properties of Si/SiO₂ multi-quantum wells (MQW) were investigated by means of Raman scattering and photoluminescence (PL) spectroscopy. The MQW structures were fabricated on a quartz substrate by remote plasma enhanced chemical vapour deposition (RPECVD) of alternating amorphous Si and SiO₂ layers. After layer deposition the samples were subjected to heat treatments, i.e. rapid thermal annealing (RTA) and furnace annealing. Distinct PL signatures of confined carriers evidenced formation of Si-nanocrystals (nc-Si) in annealed samples. Analyses of Raman spectra also show presence of nc-Si phase along with amorphous-Si (a-Si) phase in the samples. The strong influence of the annealing parameters on the formation of nc-Si phase suggests broad possibilities in engineering MQW with various optical properties. Interestingly, conversion of the a-Si phase to the nc-Si phase saturates after certain time of furnace annealing. On the other hand, thinner Si layers showed a disproportionately lower crystalline volume fraction. From the obtained results we could assume that an interface strain prevents full crystallization of the Si layers and that the strain is larger for thinner Si layers. The anomalous dependence of nc-Si Raman scattering peak position on deposited layer thickness observed in our experiments also supports the above assumption.     

反应溅射VN/SiO2纳米多层膜的微结构与力学性能

采用V和SiO₂靶通过反应溅射方法制备了一系列具有不同SiO₂和VN调制层厚的VN/SiO₂纳米多层膜. 利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明：在Ar，N₂混和气体中，射频反应溅射的SiO₂薄膜不会渗氮. 单层膜时以非晶态存在的SiO₂，当其厚度小于1nm时，在多层膜中因VN晶体层的模板效应被强制晶化，并与VN层形成共格外延生长. 相应地，多层膜的硬度得到明显提高，最高硬度达34GPa. 随SiO₂层厚度的进一步增加，SiO₂层逐渐转变为非晶态，破坏了与VN层的共格外延生长结构，多层膜硬度也随之降低. VN调制层的改变对多层膜的生长结构和力学性能也有影响，但并不明显. 关键词： 2纳米多层膜')" href="#">VN/SiO₂纳米多层膜 共格外延生长 非晶晶化 超硬效应     

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E₂SiO₅ thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er₂SiO₅ crystalline structure was formed as sample treated at 1100 °C for 1 h in O₂ atmosphere. Through proper thermal treatment, the 1.53 μm Er³⁺-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 °C. Analysis of pump-power dependence of Er³⁺ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10²¹(photons/cm²/sec). Temperature-dependent photoluminescence (PL) of Er₂SiO₅ was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er₂SiO₅ films has been demonstrated with Er³⁺ concentration of 10²²/cm³, and it opens a promising way towards future Si-based light source for Si photonics.     

磁控共溅射法制备的Zn2GeO4多晶薄膜结构及其光致发光研究

用射频磁控共溅射方法在不同温度的单晶硅基片上生长薄膜,然后在800℃真空环境下对薄膜进行退火处理,成功获得了结晶状态良好的Zn₂GeO₄多晶薄膜.利用X射线衍射(XRD),X射线光电子能谱(XPS)和原子力显微镜(AFM)对薄膜进行了结构、成分和形貌分析,研究了基片温度对三者的影响. 结果显示,当基片温度升高到400℃以上时,薄膜中的Zn₂GeO₄晶粒在(220)方向上显示出了明显的择优取向. 当基片温度在500—600℃范围内,有利于GeO₂结晶相的形成. XPS显示薄膜中存在着Zn₂GeO₄,GeO₂,GeO,ZnO四种化合态. 同时,随着基片温度的升高,晶粒尺寸增大且薄膜表面趋于平整. 薄膜的光致发光在绿光带存在中心波长为530和550nm两个峰,应该归因于主体材料Zn₂GeO₄中两个不同的Ge²⁺的发光中心. 关键词： 射频磁控溅射 2GeO₄')" href="#">Zn₂GeO₄ 荧光体     

SiO2/Si衬底上石墨烯的制备与结构表征

在分子束外延(MBE)设备中,利用直接沉积C原子的方法在覆盖有SiO₂的Si衬底(SiO₂/Si)上生长石墨烯,并通过Raman光谱和近边X射线吸收精细结构谱等实验技术对不同衬底温度(500℃,600℃,700℃,900℃,1100℃,1200℃)生长的薄膜进行结构表征.实验结果表明,在衬底温度较低时生长的薄膜是无定形碳,在衬底温度高于700℃时薄膜具有石墨烯的特征,而且石墨烯的结晶质量随着衬底温度的升高而改善,但过高的衬底温度会使石墨烯质量降低.衬底温度为1100℃时结晶质量最好.衬底温度较低时C原子活性较低,难以形成有序的C-sp²六方环.而衬底温度过高时(1200℃),衬底表面部分SiO₂分解,C原子与表面的Si原子或者O原子结合而阻止石墨烯的形成,并产生表面缺陷导致石墨烯结晶变差.     

Ellipsometric spectroscopy study of photoluminescent Si/SiO2 systems obtained by magnetron co-sputtering

Si nanograins embedded in silica matrix were obtained by magnetron cosputtering of both Si and SiO₂ at different substrate temperature (200–700°C) and thermal annealing at 1100°C. The samples were characterized by ellipsometric spectroscopy, high-resolution electron microscopy observations and photoluminescence. The highest excess of Si atoms was found to be incorporated for deposition temperature near 400–500°C, giving rise to a maximum PL and a shift of the peak position towards lower energy. These features might be interpreted in terms of quantum size effects and of density of grains, even though the interface states seem to be involved in the improvement of the photoluminescence efficiency.     

Optical properties of p-type CuAlO2 thin film grown by rf magnetron sputtering

We report the structural and optical properties of copper aluminium oxide (CuAlO₂) thin films, which were prepared on c-plane sapphire substrates by the radio frequency magnetron sputtering method. X-ray photoelectron spectroscopy (XPS) along with X-ray diffraction (XRD) analysis confirms that the films consist of delafossite CuAlO₂ phase only. The optical absorption studies show the indirect and direct bandgap is 1.8 eV and 3.45 eV, respectively. Room temperature photoluminescence (PL) measurements show three emission peaks at 360 nm (3.45 eV), 470 nm (2.63 eV) and 590 nm (2.1 eV). The first one is near band edge emission while the other two are originated from defects.     

ZrO2／SiO2多层膜中膜厚组合周期数及基底材料对残余应力的影响

ZrO₂／SiO₂多层膜由相同沉积条件下的电子束蒸发方法制备而成， 通过改变多层膜中高(ZrO₂)、低(SiO₂)折射率材料膜厚组合周期数的方法，研究了沉积 在熔石英和BK7玻璃 基底上多层膜中残余应力的变化. 用ZYGO光学干涉仪测量了基底镀膜前后曲率半径的变化， 并确定了薄膜中的残余应力. 结果发现，该多层膜中的残余应力为压应力，随着薄膜中膜厚 组合周期数的增加，压应力值逐渐减小. 而且在相同条件下，石英基底上所沉积多层膜中的 压应力值要小于BK7玻璃基底上所沉积多层膜中的压应力值. 用x射线衍射技术测量分析了膜 厚组合周期数不同的ZrO₂／SiO₂多层膜微结构，发现随着周期数增 加，多层膜的结晶程 度增强. 同时多层膜的微结构应变表现出了与所测应力不一致的变化趋势，这主要是由多层 膜中，膜层界面之间复杂的相互作用引起的. 关键词： 2／SiO₂多层膜')" href="#">ZrO₂／SiO₂多层膜 残余应力 膜厚组合周期数     

Coupling between Ge-nanocrystals and defects in SiO2

Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO₂ films co-doped with Ge is reported. The PL signal is observed in pure SiO₂, however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO₂ films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO₂ layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO₂ (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO₂ defect.     

XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films

Two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO₂/SiO₂ and SiO₂/ZrO₂ films. To explain the difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films, porous ratio and surface morphology of monolayer SiO₂ and ZrO₂ films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO₂/SiO₂ films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO₂/ZrO₂ films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO₂ layer had diffused through the entire SiO₂ layer. The difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films was influenced by the microstructure of SiO₂ and ZrO₂.     

Photocatalytic TiO2 thin films deposited on flexible substrates by radio frequency (RF) reactive magnetron sputtering

Titanium dioxide (TiO₂) thin films were deposited on flexible polycarbonate (PC) substrates by radio frequency (RF) reactive magnetron sputtering. The target was metallic titanium, argon was the plasma gas and oxygen was the reactive gas. Taguchi’s method, which uses an L₉ (3⁴) orthogonal array, signal-to-noise ratio and analysis of variance (ANOVA), was employed to study the performance of the deposition process. The effects of the deposition parameters on the structure, morphology and photocatalytic performance of the TiO₂ films were analyzed using scanning electron microscopy (SEM), X-ray diffraction, and UV-vis-NIR spectroscopy. Experiments varied RF power (50, 100, 150 W), deposition time (2, 3, 4 h), O₂/(Ar + O₂) argon/oxygen ratios (40, 60, 80%) and substrate temperatures (room, 80, 120 °C), to optimize the photoinduced decomposition of methylene blue (MB). The experimental results illustrate the effectiveness of this approach.     

Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers

Si particles embedded in an SiO₂ matrix were obtained by co-sputtering of Si and SiO₂ at various deposition temperatures T_d (200–700°C) and annealing at different temperatures T_a (900–1100°C). The systems were characterized by X-ray photoelectron, Raman scattering, infrared absorption and photoluminescence spectroscopy techniques. The results show that the photoluminescence efficiency is strongly dependent on the degree of phase separation between the Si nanocrystals and the SiO₂ matrix. This is likely connected with the Si/SiO₂ interface characteristics, together with the features indicating the involvement of quantum confinement.     

Preparation and characterization of novel Pd/SiO2 and Ca-Pd/SiO2 egg-shell catalysts with porous hollow silica

Novel egg-shell structured monometallic Pd/SiO₂ and bimetallic Ca-Pd/SiO₂ catalysts were prepared by an impregnation method using porous hollow silica (PHS) as the support and PdCl₂ and Ca(NO₃)₂·4H₂O as the precursors. It was found from transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) that Pd was loaded on PHS with a particle size of 5-12 nm in Pd/SiO₂ samples and the Pd particle size in Ca-Pd/SiO₂ was smaller than that in Pd/SiO₂ since Ca could prevent Pd particles from aggregating. X-ray photoelectron spectroscopy (XPS) analyses exhibited that Pd 3d_5/2 binding energies of Pd/SiO₂ and Ca-Pd/SiO₂ were 0.2 and 0.9 eV lower than that of bulk Pd, respectively, as a result of the shift of the electron cloud from Pd to oxygen in Pd/SiO₂ and to both oxygen and Ca in Ca-Pd/SiO₂. The activity of Ca-Pd/SiO₂ egg-shell catalyst for CO hydrogenation and the selectivity to methanol, with a value of 36.50 mmol_CO mol⁻¹_Pd s⁻¹ and 100%, respectively, were much higher than those of the catalysts prepared with traditional silica gel as the support, owing to the porous core-shell structure of the PHS support.