Near-stoichiometric Ti:LiNbO3 strip waveguide with varied substrate refractive index in waveguide layer

We report the near-stoichiometric Ti:LiNbO3 strip waveguides fabricated by vapour transport equilibration (VTE) at 1060 C for 12 h and co-diffusion of 4-8 μm wide, 115-nm thick Ti-strips. Optical studies show that these waveguides are monomode at 1.5 μm and have losses of 1.3 and 1.1 dB/cm for the TM and TE modes, respectively. In the waveguide width/depth direction, the mode field follows a Gauss/Hermite-Gauss profile. A secondary ion mass spectrometry study reveals that the Ti profile follows a sum of two error functions along the width direction and a complementary error function in the depth direction. Micro-Raman analysis shows that the Li-composition in the depth direction also follows a complementary error function. The mean Li/Nb ratio in the waveguide layer is about 0.98. The inhomogeneous Li-composition profile results in a varied substrate index in the guiding layer, and the refractive index profile in the guiding layer is given.     

Optical waveguide with homogeneous refractive index profile in LiNbO3 by double-low-energy Oxygen ion implantation

We report on the formation of the planar waveguide by 550 keV O ion followed by 250 keV O ion implantation in lithium niobate (LiNbO₃), at fluences of 6 × 10¹⁴ ions/cm² and 3 × 10¹⁴ ions/cm², respectively. The Rutherford backscattering/channeling spectra have shown the atomic displacements in the damage region before and after annealing. A broad and nearly homogeneous damage layer has been formed by double-energy ion implantation after annealing. Both the dark mode spectra and the data of refractive index profile verified that the extraordinary refractive index was enhanced in the ion implanted region of LiNbO₃. A homogeneous near-field intensity profile was obtained by double-low-energy ion implantation. There is a reasonable agreement between the simulated modal intensity profile and the experimental data. The estimated propagation loss is about 0.5 dB/cm.     

BaTiO3/p-Si异质结的整流特性和光诱导特性的研究

利用脉冲激光沉积法成功制备了BaTiO₃/p-Si异质结, 该异质结在80–300 K 显示出了良好的整流特性和光诱导特性. 开启电压随着温度的升高而逐渐降低. 利用不同频率的光子辐照样品, 观察到明显的光电导效应. 且随着照射光子能量的增大, 结电流也相应变大, 光诱导效应越明显. BaTiO₃薄膜电阻-温度(R-T) 曲线显示氧缺陷条件下BaTiO₃薄膜具有良好的半导体特性. 关键词： 异质结 光诱导效应 3薄膜')" href="#">BaTiO₃薄膜     

Anisotropic conical scattering in photorefractive BaTiO3: diffraction efficiency measurements

The simultaneous presence of beam fanning and anisotropic conical scattering hinders the exact measurements on anisotropic conical diffraction. In this paper, a method is described for the measurement of diffraction efficiency of the gratings responsible for anisotropic conical scattering in a photorefractive BaTiO₃ crystal. Dependence of diffraction efficiency on the angle of incidence of the incident beam and the build-up processes of beam fanning and anisotropic scattering have been studied.     

Grain Growth Kinetics of BaTiO3 Nanocrystals During Calcining Process

以醋酸钡和钛酸四丁酯为原料,采用溶胶-凝胶法合成了纳米BaTiO3粉体;运用差示/热重、X射线衍射及透射电镜对前驱体凝胶和产物进行了表征,并根据XRD结果,研究了纳米BaTiO3的晶格常数、晶格畸变度和晶粒尺寸随焙烧温度及时间的变化。结果表明,焙烧温度与时间对纳米BaTiO3晶格常数的影响不明显;随焙烧温度或时间的延长,纳米BaTiO3的晶格畸变度减小,晶粒尺寸增大,但晶格畸变度和晶粒尺寸更敏感于焙烧温度. 基于扩散控制机理的传统模型探讨了焙烧过程纳米BaTiO3晶粒生长动力学,得出其晶粒生长指数为7,晶粒生长活化能为75.49 kJ/mol. 将基于扩散与反应共同控制机理的新型等温模型应用于本研究中,结果表明,新型等温模型更能真实地反映纳米BaTiO3焙烧过程中的晶粒生长行为,说明纳米BaTiO3晶粒生长过程同时受溶质扩散和表面反应控制,其藕合晶粒生长活化能为27.23 kJ/mol.     

钛酸钡纳米颗粒铁电性临界尺寸的理论分析

从铁电体的Eular-Lagrange方程出发, 取贝塞尔方程级数解的形式, 得到了钛酸钡陶瓷颗粒的总极化强度表达式, 分析了各系数对总极化强度的影响. 根据总极化强度表达式, 采用MATLAB软件对尺寸在100 nm以下的钛酸钡纳米颗粒的铁电性进行了仿真分析. 结合实际数据探讨了尺寸效应对陶瓷颗粒铁电性的影响, 获得了与实验数据相符的数值解和极小值, 从而预测了钛酸钡纳米颗粒铁电性存在的临界尺寸为6 nm.     

钛酸钡单晶沿垂直解理面方向的超高压电响应的研究

研究了钛酸钡单晶沿着解理面的压电响应. 首先发现在钛酸钡单晶中存在着解理面，当垂直 这一解理面方向施加电场时，得到了超过2000pC/N的超高压电常量d33. 而这一d 33值比沿着自发极化方向〈001〉方向施加电场得到的压电常量（d33〈001 〉=87pC/N）高20多倍. 而且，沿此方向在很低电场强度（低于1kV/mm）下得到了高达0 6%的应变值，这一应变值是同等场强下PMN_PT单晶的10倍之多. 这一结果无疑对发展无铅压 电材料驱动器提供了一种新可能. 关键词： 压电响应 解理面 钛酸钡单晶     

Enhancement of positive temperature coefficient resistance effect of BaTiO3-based semiconducting ceramics caused by B2O3 vapor dopants

The positive temperature coefficient resistivity (PTCR) effect of semiconducting BaTiO₃ ceramics can be remarkably influenced by both dopants and ceramic processing. The behavior of B₂O₃ as vapor dopants was studied in this paper. It was found that the PTCR effect was enhanced distinctly, while the room temperature resistance also increased.     

积分球腔内BaTiO3：Ce晶体的自泵浦相位共轭增强现象的观测

报道了聚四氟乙烯积分球腔内光折变晶体ＢａＴｉＯ３：Ｃｅ在Ｈｅ－Ｎｅ激光作用下产生自泵浦相位共轭的增强现象，并对实验结果进行了分析。     

Ce:BaTiO3晶体中两个深陷阱能级引起的光折变光栅暗衰减特性

对Ce:BaTiO3晶体中光折变光栅的暗衰减特性进行了实验研究，观测到了晶体禁带中的Fe离子和Ce离子两个深陷阱能级同时参与了光折变过程。在单深能级模型和浅－深能级模型的基础上，提出了简化的双深能级模型，并根据该模型定量地分析了Fe离子和Ce离子每个深陷阱能级在不同光栅波矢、不同光栅写入光强时对总空间电场以及光折变光栅的贡献。     

Characterization of optical waveguide in Nd: GdVO4 by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd: GdVO₄ crystals by triple oxygen ion implantation at energies of (2.4, 3.0, and 3.6 MeV) and fluences of (1.4, 1.4, and 3.1)  × 10¹⁴ions/cm². The prism-coupling method is used to investigate the dark-mode property at wavelength of 632.8 nm. The refractive index profiles of the waveguide are reconstructed by an effective refractive index, n_eff method. The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which means the formation of nonleaky waveguide in the crystal.     

Modeling of graded index waveguide fabricated by ion exchange on Er3+ doped glass

A general numerical tool,based on thermal diffusion equation and full-vectorial eigen-mode equation,has been presented for the systematic analysis of graded index channel waveguide fabricated by ion exchange on Er3+ doped glass.Finite difference method with full-vectorial formulation(FV-FDM) is applied to solving the full-vectorial modes of graded index channel waveguide for the first time.The coupled difference equations based on magnetic fields in FV-FDM are derived from the Taylor series expansion and accurate formulation of boundary conditions.Hybrid nature of vectorial guided modes for both pump(980 nm) and signal light(1550 nm) are demonstrated by the simulation.Results show that the fabrication parameters of ion exchange,such as channel opening width and time ratio of second step to first step in ion exchange,have large influence on the properties of waveguide.By optimizing the fabrication parameters,maintenance of monomode for signal light and improvement of the gain dynamics can be achieved in Er3+ doped waveguide amplifier(EDWA) fabricated by ion exchange technique.This theoretical model is significant for the design and fabrication of EDWA with ion exchange technique.Furthermore,a single polarization EDWA,which operates at wavelength from 1528 nm to 1541 nm for HE polarization,is numerically designed.     

Phase transition and dielectric characteristics of nano-grained BaTiO3 ceramics synthesized from surface-coated nano-powders

Nano-grained BaTiO₃ (BTO) ceramics were synthesized by pressureless sintering BTO nano-powders coated with Mn materials. The BTO ceramics, which were prepared at 800 °C from nano-powders of 40 nm size, are of a cubic structure with a small fraction of tetragonal phase, similar to that of the starting BTO nano-powders of the same size. On the other hand, the BTO ceramics with about grains of 1300 nm size, which were prepared at sintering temperature ranging from 1100 to 1200 °C, have a mainly tetragonal phase. By increasing the sintering temperature and/or the amount of the coating materials, the crystallinity of the tetragonal phase was increased. The relation of the dielectric features of the nano-grained BTO ceramics with the structural variation is discussed in terms of process parameters.     

外延压应变对BaTiO$lt;sub$gt;3$lt;/sub$gt;铁电体抗辐射性能影响的分子动力学研究

采用基于壳模型的分子动力学模拟方法, 研究了存在外延压应变时BaTiO₃铁电体的辐射位移效应, 以O原子作为初冲原子(primary knock-on atom, PKA), 能量为1 keV, 方向为[001], 分别计算了外延压应变为0, 0.4%, 0.8%, 1.2%, 1.6%, 2.0%时体系的缺陷数量、分布, 以及辐射前后的极化强度, 比较了压应变为2%以及无应变下损伤区域、缺陷离位距离和反向外电场下PKA的迁移距离. 结果表明, 随外延压应变增加体系极化近似线性增加, 辐射后极化降低幅度降低、缺陷产生的数量有所减小, 2% 压应变存在时缺陷原子的离位距离、PKA在反向外电场作用下的迁移距离和损伤区域都小于无应变的情况, 说明外延压应变的存在对辐射造成的晶格损伤具有抑制作用, 对辐射损伤具有改善作用, 可以通过引入外延压应变来调控BaTiO₃的辐射损伤. 关键词： 应变 3')" href="#">BaTiO₃ 辐射损伤 分子动力学模拟     

Characterization of optical waveguide in Nd: LuVO4 crystals by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd:LuVO₄ crystals by triple-energy O³⁺-ion implantation at energies of 2.4, 3.0, and 3.6 MeV and doses of 1.4, 1.4, and 3.1×10¹⁴ ions/cm², respectively. The prism-coupling method is used to investigate the dark-mode property at a wavelength of 633 nm. The refractive index profiles of the waveguide are reconstructed by the reflectivity calculation method (RCM). The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which indicates the formation of non-leaky waveguide in the crystal.     

一种电光可调的铌酸锂/钠基表面等离子体定向耦合器

为了满足日益增加的集成光子器件设计的需求,本文研究了一种铌酸锂/钠表面等离子体波导(Li Nb O3/Na surface plasmonic waveguide, LNSPW),并利用LNSPW构成电光可调的定向耦合器(directional coupling,DC).利用有限元方法 (finite element method, FEM)对波导的模式特性和耦合器的耦合特性进行了分析.结果表明,随着波导尺寸的增大,传播长度可达约200μm,归一化有效模场面积小于0.4.通过调节耦合间距(W_gap)、耦合长度(L_C)和工作波长(λ)等参数,铌酸锂钠表面等离子体波导构建的定向耦合结构可实现3 d B耦合.当W_gap=100 nm和L_C=17μm时, DC在V₀=53 V时可实现3 d B耦合,且具有较好的方向性和隔离度.LNSPW的研究为实现可调的DC提供了一种可行的方案,在集成电光可调器件研究领域有潜在的应用前景.除此之外, LNSPW还可广泛应用于非线性光学、光信号处理及光全...     

极化子荧光及其断层扫描对Ti:LiNbO3光波导表征研究

小极化子(Nb⁴⁺_Li)荧光处于700—950 nm谱段，对不同化学还原程度同组分的纯铌酸锂晶体的研究表明荧光的强度反映了化学还原程度的强弱.从小极化子浅层能级出发，提出以“1中心3级态跃迁”来描述小极化子的受激荧光过程.钛扩散铌酸锂光波导(Ti：LiNbO₃)表面还原程度的均匀性可能在波导制造的热扩散过程中被破坏.在对铌酸锂波导表面、深部的扫描结果中，荧光的强度呈现出表面与深部、波导内与外的差异，表面的强度是深部的6—8倍.研究表明，利用非损伤性的极化子荧光谱，对加工过程热处理进行检控是非常有效的.同时，波导内与外的荧光强度差异间接反映了波导的横切面的外形.     

The phase transitions and ferroelectric behavior of dense nanocrystalline BaTiO3 ceramics fabricated by pressure assisted sintering

Dense nanocrystalline BaTiO₃ ceramics with uniform grain sizes of 30 nm was obtained by pressure assisted sintering. The phase transitions were investigated by Raman scattering at temperatures ranging from −190 to 200 °C. With increasing temperature, similar to 3 μm BaTiO₃ normal ceramics, the successive phase transitions from rhombohedral to orthorhombic, orthorhombic to tetragonal, tetragonal to cubic were also observed in 30 nm BaTiO₃ ceramics. Especially, the coexistence of ferroelectric tetragonal and orthorhombic phases was found at room temperature. The ferroelectric behavior was further characterized by P-E hysteresis loop. The experimental results indicate that the critical grain size of the disappearance of ferroelectricity in nanocrystalline BaTiO₃ ceramics fabricated by pressure assisted sintering is below 30 nm.     

Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused ion beam implantation and oxidation

Optical channel waveguides formed by focused ion beam (FIB) implantation-induced mixing of AlGaAs multiple quantum well structures and subsequent oxidation of the mixed regions have the potential of significantly reducing the size of integrated photonic waveguide structures. Since FIB implantation is a direct write process characterized by nanoscale precision, we suggest its use for forming channel waveguides having nanoscale (submicrometer) widths. Calculations presented for such channel waveguides show reductions in size by at least an order of magnitude are possible for directional couplers and other structures involving curved channel waveguide sections. Such size reductions would allow the realization of significantly higher levels of device integration than are now currently possible.     

Annealing behaviour of structure and morphology and its effects on the optical gain of Er3+/Yb3+ co-doped Al2O3 planar waveguide amplifier

Using transmission electron microscopy (TEM) and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped Al₂O₃ films in the temperature range from $600\,^{\circ}\mkern-1mu$C--900$\,^{\circ}\mkern-1mu$C. By comparison with TEM observation, the annealing behaviours of photoluminescence (PL) emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800$\,^{\circ}\mkern-1mu$C might result from the crystallization of amorphous Al₂O₃ films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al₂O₃ planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al₂O₃ planar waveguide amplifier.