First-principles study of structural,electronic and optical properties of ZnF_2

The structural, electronic, and optical properties of rutile-, CaC12-, and PdF2-ZnF2 are calculated by the plane-wave pseudopotential method within the density functional theory. The calculated equilibrium lattice constants are in reasonable agreement with the available experimental and other calculated results. The band structures show that the rutile-, CaCl2-, and PdF2-ZnF2 are all direct band insulator. The band gaps are 3.63, 3.62, and 3.36 eV, respectively. The contribution of the different bands was analyzed by the density of states. The Mulliken population analysis is performed. A mixture of covalent and weak ionic chemical bonding exists in ZnF2. Furthermore, in order to understand the optical properties of ZnF2, the dielectric function, absorption coefficient, refractive index, electronic energy loss spectroscopy, and optical reflectivity are also performed in the energy range from 0 to 30 eV. It is found that the main absorption parts locate in the UV region for ZnF2. This is the first quantitative theoretical prediction of the electronic and optical properties of ZnF2 compound, and it still awaits experimental confirmation.     

First-principles study of the electronic structure and optical properties of cubic Perovskite NaMgF_3

The structural, electronic, and optical properties of cubic perovskite NaMgF3 are calculated by plane-wave pseudopo- tential density functional theory. The calculated lattice constant a0, bulk modulus B0, and the derivative of bulk modulus B~ are 3.872/~, 78.2 GPa, and 3.97, respectively. The results are in good agreement with the available experimental and theo- retical values. The electronic structure shows that cubic NaMgF3 is an indirect insulator with a wide forbidden band gap of Eg = 5.90 eV. The contribution of the different bands is analyzed by total and partial density of states curves. Population analysis of NaMgF3 indicates that there is strong ionic bonding in the MgF2 unit, and a mixture of ionic and weak covalent bonding in the NaF unit. Calculations of dielectric function, absorption coefficient, refractive index, electronic energy loss spectroscopy, optical reflectivity, and conductivity are also performed in the energy range 0 to 70 eV.     

Structural, electronic, and optical properties of ZnOl_xSex alloys using first-principles calculations

The structural, electronic, and optical properties of binary ZnO, ZnSe compounds, and their ternary ZnOl_xSex alloys are computed using the accurate full potential linearized augmented plane wave plus local orbital （FP-LAPW ＋ lo） method in the rocksalt （B 1） and zincblende （B3） crystallographic phases. The electronic band structures, fundamental energy band gaps, and densities of states for ZnO1_xSex are evaluated in the range 0 〈 x 〈 1 using Wu-Cohen （WC） generalized gradient approximation （GGA） for the exchange-correlation potential. Our calculated results of lattice parameters and bulk modulus reveal a nonlinear variation for pseudo-binary and their ternary alloys in both phases and show a considerable deviation from Vegard＇s law. It is observed that the predicted lattice parameter and bulk modulus are in good agreement with the available experimental and theoretical data. We establish that the composition dependence of band gap is semi-metallic in B1 phase, while a direct band gap is observed in B3 phase. The calculated density of states is described by taking into account the contribution of Zn 3d, O 2p, and Se 4s, and the optical properties are studied in terms of dielectric functions, refractive index, reflectivity, and energy loss function for the B3 phase and are compared with the available experimental data.     

First-principles calculations of structural,electronic, and thermodynamic properties of ZnO_(1-x)S_x alloys

In this study the pseudo-potential method is used to investigate the structural, electronic, and thermodynamic proper- ties of ZnOl_xSx semiconductor materials. The results show that the electronic properties are found to be improved when calculated by using LDA ~ U functional as compared with local density approximation （LDA）. At various concentrations the ground-state properties are determined for bulk materials ZnO, ZnS, and their tertiary alloys in cubic zinc-blende phase. From the results, a minor difference is observed between the lattice parameters from Vegard＇s law and other calculated results, which may be due to the large mismatch between lattice parameters of binary compounds ZnO and ZnS. A small deviation in the bulk modulus from linear concentration dependence is also observed for each of these alloys. The ther- modynamic properties, including the phonon contribution to Helmholtz free energy △F, phonon contribution to internal energy △E, and specific iheat at constant-volume Cv, are calculated within quasi-harmonic approximation based on the calculated phonon dispersion relations.     

First-principles study of the structural,elastic, and optical properties for Sr0.5Ca0.5TiO3

A detailed theoretical study of the structural, elastic, and optical properties for Sr0.5Ca0.5TiO3 is carried out by first- principles calculations. The band structure exhibits a direct bandgap of 2.08 eV at the F point in the Brillouin zone. The bulk modulus, shear modulus, Young＇s modulus, and Poisson＇s ratio are derived based on the calculated elastic constants. The bulk modulus B = 153 GPa and shear modulus G = 81GPa are in good agreement with available experimental data. Poisson＇s ratio v = 0.275 suggests that Sr0.sCa0.sTiO3 should be classified as being a ductile material. Using the electronic band structure and density of states, we analyze the interband contribution to the optical properties. The real and imaginary parts of the dielectric function, as well as the optical properties such as the optical absorption coefficient, refractive index, extinction coefficient, and energy-loss spectrum are calculated. The static dielectric constant ε1 （0） and the refractive index n（0） are also investigated.     

锰掺杂二硅化铬电子结构和光学性质的第一性原理计算

采用基于第一性原理的密度泛函理论(DFT)赝势平面波方法计算了锰掺杂二硅化铬(CrSi2)体系的能带结构、态密度和光学性件质.计算结果表明末掺杂CrSi2属于间接带隙半导体间接带隙宽度△ER=0.35 eV;Mn掺杂后费米能级进入导带,带隙变窄,且间接带隙宽度△Eg=0.24 eV,CrSi2转变为n型半导体.光学参数发生改变,静态介电常数由掺杂前的ε1(O)=32变为掺杂后的ε1(O)=58;进一步分析了掺杂对CrSi2的能带结构、态密度和光学性质的影响,为CrSi2材料掺杂改件的研究提供r理论依据.     

Energy band structure in optical of spin-1 condensates lattices

The energy band structure of spin-1 condensates with repulsive spimindependent and either ferromagnetic or antiferromagnetic spin-dependent interactions in one-dimensional （1D） periodic optical lattices is discussed. Within the two-mode approximation, Bloch bands of spin-1 condensates are presented. The results show that the Bloch bands exhibit a complex structure as the atom density of mF = 0 hyperfine state increases： bands splitting, reversion, intersection and loop structure are excited subsequently. The complex band structure should be related to the tunneling and spin-mixing dynamics.     

Electronic structures and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O

The energy band structures, density of states, and optical properties of IliA-doped wurtzite Mg0.25Zn0.75O （IIIA= A1, Ga, In） are investigated by a first-principles method based on the density functional theory. The calculated results show that the optical bandgaps of Mg0.25Zn0.75O：IIIA are larger than those of Mg0.25Zn0.75O because of the Burstein-Moss effect and the bandgap renormalization effect. The electron effective mass values of Mg0.25Zn0.75O：IIIA are heavier than those of Mgo.25Zno.750, which is in agreement with the previous experimental result. The formation energies of MgZnO：Al and MgZnO：Ga are smaller than that of MgZnO：In, while their optical bandgaps are larger, so MgZnO：Al and MgZnO：Ga are suitable to be fabricated and used as transparent conductive oxide films in the ultra-violet （UV） and deep UV optoelectronic devices.     

Zn1-xMgxO电子结构及光学性质的第一性原理GGA+U方法研究

Mg掺杂ZnO形成的固溶体Zn_1-xMg_xO（ZMO）（0 ≤ x ≤ 0.25）是一种带隙较宽、电子学性质可调控的半导体材料,在薄膜太阳电池及光电设备的透明电极等方面具有重要的应用价值。基于密度泛函理论下的第一性原理超软赝势方法,采用GGA+U计算了ZMO的电子结构和光学性质。计算结果表明,随着x值的增加,ZMO的禁带宽度由x=0时的3.32 eV增加到x=0.25时的3.78 eV;光吸收边及反射谱和能量损失谱均发生明显蓝移,峰值存在于紫外光区。计算结果与实验结论相符合。     

First-principles study of orbital ordering in cubic fluoride KCrF_3

Comprehensive first-principles calculations are performed to provide insight into the intriguing physical properties of the ternary cubic fluoride KCrF3. The electronic structures exhibit a prominent dependence on the effective local Coulomb interaction parameter Ueff. The ground state of the cubic phase is a ferromagnetic （FM） half-metal with Ueff equal to 0, 2, and 4 eV, whereas the insulating A-type antiferromagnetic （A-AFM） state with concomitant homogeneous orbital ordering is more robust than the FM state for Ueff exceeding 4 eV. We propose that the origin of the orbital ordering is purely electronic when the cooperative Jahn-Teller distortions are absent in cubic KCrF3.     

Electronic structure of twinned ZnS nanowire

The electronic properties of twinned ZnS nanowires （NWs） with different diameters were investigated based on first-principles calculations. The energy band structures, projected density of states and the spatial distributions of the bottom of conduction band and the top of the valence band were presented. The results show that the twinned nanowires exhibit a semiconducting character and the band gap decreases with increasing nanowire diameter due to quantum confinement effects. The valence band maximum and conduction band minimum originate mainly from the S-p and Zn-s orbitals at the core of the nanowires, respectively, which was confirmed by their spatial charge density distribution. We also found that no heterostructure is formed in the twinned ZnS NWs since the valence band maximum and conduction band minimum states are distributed along the NW axis uniformly. We suggest that the hexagonal （2H） stacking inside the cubic （3C） stacking has no effect on the electronic properties of thin ZnS NWs.     

Structural,electronic and magnetic properties of the Mn-Ni(110) c(2×2) surface alloy

<正>Using first-principles total energy method,we study the structural,the electronic and the magnetic properties of the MnNi(110) c(2×2) surface alloy.Paramagnetic,ferromagnetic,and antiferromagnetic surfaces in the top layer and the second layer are considered.It turns out that the substitutional alloy in the outermost layer with ferromagnetic surface is the most stable in all cases.The buckling of the Mn-Ni(110) c(2×2) surface alloy in the top layer is as large as 0.26 A(1 A=0.1 nm) and the weak rippling is 0.038 A in the third layer,in excellent agreement with experimental results.It is proved that the magnetism of Mn can stabilize this surface alloy.Electronic structures show a large magnetic splitting for the Mn atom,which is slightly higher than that of Mn-Ni(100) c(2×2) surface alloy(3.41 eV) due to the higher magnetic moment.A large magnetic moment for the Mn atom is predicted to be 3.81μB.We suggest the ferromagnetic order of the Mn moments and the ferromagnetic coupling to the Ni substrate,which confirms the experimental results.The magnetism of Mn is identified as the driving force of the large buckling and the work-function change.The comparison with the other magnetic surface alloys is also presented and some trends are predicted.     

LaAlO3/SrTiO3界面的电子结构及光学性质的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法,结合局域密度近似（LDA）研究了钙钛矿结构氧化物LaAlO3 /SrTiO3界面的电子结构及光学性质。能带结构分析表明当形成(AlO2)-/(TiO2)0界面时其禁带宽度为1.888 eV,呈现绝缘体的性质,当形成(LaO)+/(SrO)0界面时其禁带宽度为0.021 eV,呈现半导体或半金属性质。同时,对不同界面的光学性质也进行了研究,结果表明纯相的LaAlO3和SrTiO3的吸收系数、反射系数及能量损失谱强度明显高于由这两种单质形成不同界面的强度。     

Ab-initio density functional theory study of a WO3 NHa-sensing mechanism

WO3 bulk and various surfaces are studied by an ab-initio density functional theory technique. The band structures and electronic density states of WO3 bulk are investigated. The surface energies of different WO3 surfaces are compared and then the （002） surface with minimum energy is computed for its NH3 sensing mechanism which explains the results in the experiments. Three adsorption sites are considered. According to the comparisons of the energy and the charge change between before and after adsorption in the optimal adsorption site Olc, the NH3 sensing mechanism is obtained.     

Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we study the structural, electronic, and optical properties of vertically stacked GaS-SnS₂ heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS₂ heterostructure is a semiconductor with a suitable indirect band gap of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS₂ heterostructure can be effectively tuned by an external strain and electric field. The optical absorption of GaS-SnS₂ heterostructure is more enhanced than those of the GaS monolayer and SnS₂ monolayer in the visible light region. Our results suggest that the GaS-SnS₂ heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in the visible light region.     

Elastic and Thermodynamic Properties of CdSe from First-Principles Calculations

The lattice parameters, bulk modulus, phase transition pressure, and temperature dependencies of the elastic constants cij of CdSe are investigated by using the Cambridge Serial Total Energy Package （CASTEP） program in the frame of Density Functional Theory （DFT）. It is found that the phase transitions from the ZB structure to the RS structure and from WZ structure to RS structure are 2.2 GPa and 2.8 GPa, respectively. Our results agree well with the available experimental data and other theoretical results. The aggregate elastic modulus （B, G, E, A ）, the Poisson＇s ratio （v）, the Griuneisen parameter （γ）, the Debye temperature θD on pressure and temperature are also successfully obtained.     

Tunable band gap and optical properties of surface functionalized Sc_2C monolayer

Using the density functional theory, we have investigated the electronic and optical properties of two-dimensional Sc_2C monolayer with OH, F, or O chemical groups. The electronic structures reveal that the functionalized Sc_2C monolayers are semiconductors with a band gap of 0.44–1.55 eV. The band gap dependent optical parameters, like dielectric function, absorption coefficients, reflectivity, loss function, and refraction index were also calculated for photon energy up to 20 eV. At the low-energy region, each optical parameter shifts to red, and the peak increases obviously with the increase of the energy gap. Consequently, Sc_2C monolayer with a tunable band gap by changing the type of surface chemical groups is a promising 2D material for optoelectronic devices.     

A density functional theory structures,stabilities, and study on size-dependent electronic properties of bimetallic MnAgm （M=Na,Li; n ＋ m ≤ 7） clusters

The equilibrium geometries, relative stabilities, and electronic properties of MnAgm（M=Na, Li; n ＋ m ≤ 7） as well as pure Agn, Nan, Lin （n ≤ 7） clusters are systematically investigated by means of the density functional theory. The optimized geometries reveal that for 2 ≤ n ≤ 7, there are significant similarities in geometry among pure Agn, Nan, and Lin clusters, and the transitions from planar to three-dimensional configurations occur at n = 7, 7, and 6, respectively. In contrast, the first three-dimensional （3D） structures are observed at n ＋ m = 5 for both NanAgm and LinAgm clusters. When n ＋ m ≥5, a striking feature is that the trigonal bipyramid becomes the main subunit of LinAgm. Furthermore, dramatic odd-even alternative behaviours are obtained in the fragmentation energies, secondorder difference energies, highest occupied and lowest unoccupied molecular orbital energy gaps, and chemical hardness for both pure and doped clusters. The analytic results exhibit that clusters with an even electronic configuration （2, 4, 6） possess the weakest chemical reactivity and more enhanced stability.     

Structural,electronic, and magnetic properties of boron cluster anions doped with aluminum：BnAl-（2〈n〈9）

The geometrical structures, relative stabilities, electronic and magnetic properties of small BnAl-（2〈n〈9）clusters are systematicalyy investigated by using the first-principles density functional theory. The results show that the A1 atom prefers to reside either on the outer-side or above the surface, but not in the centre of the clusters in all of the most stable BnAl-（2〈n〈9） isomers and the one excess electron is strong enough to modify the geometries of some specific sizes of the neutral clusters. All the results of the analysis for the fragmentation energies, the second-order difference of energies, and the highest occupied-lowest unoccupied molecular orbital energy gaps show that B4A1- and B8A1- clusters each have a higher relative stability. Especially, the BsA1-cluster has the most enhanced chemical stability. Furthermore, both the local magnetic moments and the total magnetic moments display a pronounced oddeven oscillation with the number of boron atoms, and the magnetic effects arise mainly from the boron atoms except for the B7A1- and BgA1- clusters.     

Probing the thermoelectric transport properties of n-type Bi2Te3 close to the limit of constitutional undercooling

Bulk n-type Bi2Te3 single crystals with optimized chemical composition were successfully prepared by a high temperature-gradient directional solidification method. We investigate the influence of alloy microstructure, chemical composition, and growth orientation on the thermoelectric transport properties. The results show that the composition of single-crystal Bi2Te3 alloy, along the c axis direction, could be slightly tuned by changing the growth rate of the crystal. At a rate of 18 mm/h, the formed Bi2Te3 crystal exhibits good thermoelectric properties. At 300 K, a maximum Seebeck coefficient of -245 μV/K and an electrical conductivity of 5.6 × 10 4 S/m are acquired. The optimal power factor is ob- tained as 3.3 × 10 -3 W/K2m, with a figure of merit of 0.74. It can be attributed to the increased tellurium allocation in the Bi2Te3 alloys, as verified well by the density functional theory caLculations.