Bragg gratings in defect-free germanium-doped optical fibers

Bragg gratings have been written in germanium-doped optical fibers that have been treated to remove the UV absorption bands associated with oxygen-deficient defects. When one is using high-intensity 193-nm light from an ArF excimer laser to fabricate the gratings, the refractive index increases and the grating transmission spectra are similar to those obtained in standard (untreated) fiber.     

Photosensitivity and photoluminescence of Sn/Yb codoped silica optical fiber preform

Sn/Yb codoped silica optical fiber preform is prepared by the modified chemical vapor deposition （MCVD） followed by the solution-doping method. Ultraviolet （UV） optical absorption, photoluminescence （PL） spectra under 978-nm laser diode （LD） pumping, and refractive index change after exposure to 266-nm laser pulses are obtained. There is only a little change in the PL spectra while a positive refractive index change up to 2×10^-4 is observed after 30-min exposure to 266-nm laser pulses. The results show that both of the peculiar photosensitivity of Smdoped silica and the gain property of Yb-doped silica fiber are preserved in the Sn/Yb codoped silica optical fiber preform. The experimental data suggest that the photosensitivity of the fiber preform under high energy density laser irradiation should be mainly due to the bond-breaking of oxygen deficient defects, while under relatively low energy density laser irradiation, the refractive index change probably originates from the photoconversion of optically active defects.     

光致折变布拉格光栅实验研究

本文介绍了 2 48nm、Kr F准分子激光经过石英相位掩膜版的空间调制 ,在载氢增敏处理过的通信光纤与 B/Ge光纤上分别写入光致折变布拉格光栅的实验研究。经实验测定 ,在光栅布拉格波长上 (λH2 =15 46 .45 5 4nm ,λB/Ge=15 45 .15 5 nm) ,两种光栅反射率均大于 99% ,3d B带宽分别为 0 .12 9nm和 0 .182 nm。经比较 ,B/ Ge光纤比氢载光纤具有更好的光敏性和热稳定性     

Optical properties of silicon microcolumn grown by nanosecond pulsed laser irradiation

We have investigated the optical properties of silicon pillars formed by cumulative nanosecond pulsed excimer laser irradiation of single-crystal silicon in vacuum created under different repetition rates. The changes in optical characteristics of silicon pillar were systematically determined and compared as the number of KrF laser shots was increased from 1 to 15,000.The results show that silicon pillar PL curves exhibit a blue band around 430 nm and an ultraviolet band peaking at 370 nm with the vanishing of the green emission at 530 nm. A correlation between the intensity of the blue PL band and the intensity of the Si-O absorption bands has been exploited to explain such emission, whereas, the origin of the ultraviolet band may be attributed to different types of defects in silicon oxide.     

CdSe/PMMA: Plastic fiber material containing CdSe quantum dots

An optical gain plastic, CdSe/PMMA, poly-methyl methacrylate doped with CdSe quantum dot (QD), is reported in this study. With a narrow size distribution of the QD prepared by organic synthesis, the measured results show that the photoluminescence (PL) peak intensity is enhanced by ～2.5 times, FWHM broadened by ～10 nm, and the PL peak wavelength blue shifted by ～25 nm in the CdSe/PMMA compared with plain CdSe QD. Under continuous irradiation of 473-nm laser, the PL peak intensity is positively correlated with time within the first hour after the samples are fabricated, but gradually stabilizes afterward. The obtained results suggest that the CdSe/PMMA material reported here is a desirable optical gain plastic. Potential applications include high gain wideband fiber amplifiers or other photonic devices in the future due to its high flexibility, low weight and low cost.     

Visible photoluminescence from hydrogenated amorphous carbon films prepared by pulsed laser ablation of polymethyl methacrylate (PMMA)

Visible photoluminescence (PL) has been observed from the hydrogenated amorphous carbon (a-C:H) films prepared by ArF pulsed laser ablation of polymethyl methacrylate (PMMA) in the presence of hydrogen gas (H₂). With increasing hydrogen concentration the PL intensity increases and the intensity maximum blue-shifted. The PL intensity also increases after hours of light illumination, exhibiting a light soaking enhancement. Increasing the deposition temperature decreases the PL and increases the ratio of sp³/sp² bonds.Z.F. Li is on leave from Department of Physics, Nanjing University, Nanjing 210093, P.R. China.     

Laser writing of a subwavelength structure on silicon (100) surfaces with particle-enhanced optical irradiation

Spherical 0.5-μm silica particles were placed on a silicon (100) substrate. After laser illumination with a 248-nm KrF excimer laser, hillocks with size of about 100 nm were obtained at the original position of the particles. The mechanism of the formation of the subwavelength structure pattern was investigated and found to be the near-field optical resonance effect induced by particles on the surface. Theoretically calculated near-field light intensity distribution was presented, which was in agreement with the experimental result. The method of particle-enhanced laser irradiation has potential applications in nanolithography.     

Laser ablation of a molten Ga target; comparison of experiments and simulation

The laser ablation mechanism of a molten Ga target was examined through comparison of experiments and simulation. The ablation was performed using an ArF excimer laser (193-nm wavelength and 20-ns duration) in vacuum. The observed existence of the threshold laser fluence (necessary for onset of the ablation) and linear increases in both the Ga deposition rate and the Ga emission (fluorescence) intensity with the laser fluence were satisfactorily explained by the simulation based on the thermal ablation model. In addition, it was found that most of the ablated particles are transferred to the substrate not in the form of an excited ion but an excited neutral atom, except at and near the target. Received: 3 September 2001 / Accepted: 7 November 2001 / Published online: 20 December 2001     

nc-Ge/SiN_x多层膜材料的可调控非线性光学特性

采用等离子体增强化学气相沉积和后退火的方法制备了纳米锗/氮化硅(nc-Ge/SiN_x)多层薄膜。借助Raman光谱仪对其微结构进行表征,测得样品的晶化率大于46%。由样品的光吸收谱可知,nc-Ge的尺寸越小,其光学带隙越大。利用Z扫描技术对样品的非线性光学特性进行研究,以波长为1 064 nm、脉宽为25 ps的锁模激光作为激发光,测得样品的非线性折射率系数在10~(-10)cm~2/W数量级。实验结果表明,通过改变nc-Ge的尺寸可以使材料的非线性光学折射率由自散焦转变为自聚焦特性,而负的非线性折射率系数可归因于两步吸收产生的自由载流子散射效应。当激发光强增大时,在锗层厚度为6 nm的多层膜中同时存在两步吸收过程和饱和吸收过程。两种非线性光学吸收过程之间的竞争是样品呈现不同非线性光学特性的主要原因。     

Dual-beam ablation of fused silica by multiwavelength excitation process using KrF excimer and F2 lasers

A new technique of dual-beam laser ablation of fused silica by multiwavelength excitation process using a 248-nm KrF excimer laser (ablation beam) coupled with a 157-nm F₂ laser (excitation beam) in dry nitrogen atmosphere is reported. The dual-beam laser ablation greatly reduced debris deposition and, thus, significantly improved the ablation quality compared with single-beam ablation of the KrF laser. High-quality ablation can be achieved at the delay times of KrF excimer laser irradiation shorter than 10 ns due to a large excited-state absorption. The ablation rate can reach up to 80 nm/pulse at the fluence of 4.0 J/cm² for the 248-nm laser and 60 mJ/cm² for the F₂ laser. The ablation threshold and effective absorption coefficient of KrF excimer laser are estimated to be 1.4 J/cm² and 1.2᎒⁵ cm^-1, respectively.     

掺Ti对ZnO纳米颗粒的微观结构与光学特性的影响

本研究利用溶胶凝胶法制备了Ti_xZn_(1-x)O纳米粒子,并且分析了Ti掺杂对ZnO纳米粒子晶体结构与光学特性的影响.微观结构分析得知Ti掺杂会使ZnO结晶较差,晶格常数与压缩应力增大,但可使晶粒缩小至5 nm左右.光致发光(PL)光谱分析得出Ti掺杂会造成氧空位缺陷减少,近带边发光(NBE)峰值蓝移,但NBE峰值强度增幅变化却不大.拉曼光谱分析表明Ti_xZn_(1-x)O的结晶品质不佳且NBE峰值强度的增幅未完全依循多声子模态信号减弱而增强的规律,其原因是NBE峰值强度除受多声子模态信号影响外还受其它因素的影响.TC(002)值越高时样品的多声子模态信号会越弱,而NBE峰值强度增幅越大.     

Photoluminescence and optical characterization of CdS nanoparticles prepared by solid-state method at low temperature

The photoluminescence (PL) and optical properties of CdS nanoparticles prepared by the solid-state method at low temperature have been discussed. The effects of NaCl and anionic surfactant SDBS (sodium dodecylbenzene sulfonate) on the luminescent properties of CdS nanophosphors prepared using this method, without the inert gas or the H₂S environment, were studied separately. The synthesized products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscope (FESEM), and energy dispersive X-ray spectroscopy (EDAX). UV–VIS absorption and PL spectra were also studied. XRD studies confirmed the single-phase formation of CdS nanoparticles. TEM micrograph revealed the formation of nearly spherical nanoparticles with a diameter of 2.5 nm. The PL emission for the CdS shows the main peak at 560 nm with a shoulder at 624 nm, with an increase in the PL intensity after the addition of SDBS. The effect of Mn doping on PL intensity has also been investigated. The PL spectra show that the emission intensity decreases as the dopant concentration increases.     

Excimer laser-assisted annealing of silicate glass with ion-synthesized silver nanoparticles

The effect of KrF excimer laser radiation on a composite layer consisting of sodium-potassium silicate glass with silver nanoparticles is studied as a function of the number of laser nanosecond pulses. The silver nanoparticles are synthesized by ion implantation. The measured optical absorption of the composite layer demonstrates that the silver nanoparticle size decreases monotonically as the number of laser pulses increases. Rutherford backscattering shows that laser annealing is accompanied by silver diffusion into the bulk of the glass and partial metal evaporation from the sample surface. The detected decrease in the silver nanoparticle size is discussed in terms of simultaneous melting of silver nanoparticles and the glass matrix due to the absorption of laser radiation.     

1550nm-VCSELs在偏振保持光反馈和正交光注入下的偏振转换特性

基于自旋反转模型,研究了1550 nm垂直腔面发射激光器(1550 nm-VCSELs)在偏振保持光反馈和正交光注入下的偏振转换特性.结果表明:正交光注入下的从激光器会随着注入强度的增加产生偏振转换.在归一化注入电流较小时,改变反馈强度,会使从激光器发生偏振转换的注入强度出现规律不同的变化;改变频率失谐,会使从激光器发生偏振转换的注入强度出现规律相同的变化.     

锗在吸收边附近的压力—折射率系数

目前半导体锗在吸收边附近(1550 nm)的压力-折射率系数在实验和理论上并未研究清楚.本文通过测量在不同压力下镀在光纤端面的高结晶度锗薄膜的反射率,来计算得到锗在吸收边附近的压力-折射率系数.本文的实验结果显示,锗在吸收边附近出现反常色散现象,即折射率随能量变化呈正相关,并且其压力-折射率系数出现反常,为正值,这是由于多晶结构中的激子吸收所引起.通过引入描述激子色散的临界点模型,得到锗在吸收边附近的反常色散范围和压力-折射率系数呈正值的范围.本文的结果将有助于基于锗薄膜的通信C波段光学器件的研究.     

Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)

It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F₂, 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ=1.2±0.1 ns for the range of temperatures 16-150 K. The blue band decay possesses fast and slow components. The fast component of the blue band decay is about 1.2 ns. The slow component of the blue band well corresponds to exponent with time constant equal to 17±1 μs within the temperature range 16-200 K. deviations from exponential decay were observed as well and explained by influence of nearest interstitial OH groups on the luminescence center. The UV band was not detected for F₂ laser excitation. For the case of KrF laser only a structure less tail up to 4.6 eV was detected. Both the UV and the blue bands were also found in recombination process with two components having characteristic time about 1 and 60 μs. For blue band recombination luminescence decay is lasting to ms range of time with power law decay ∼t⁻¹.For the case of X-ray excitation the luminescence intensity exhibits strong drop down above 100 K. such an effect does not take place in the case of photoexcitation with lasers. The activation energies for both cases are different as well. Average value of that is 0.03±0.01 eV for the case of X-ray luminescence and it is 0.15±0.05 eV for the case of PL. So, the processes of thermal quenching are different for these kinds of excitation and, probably, are related to interaction of the luminescence center with OH groups.Stishovite crystal irradiated with pulses of electron beam (270 kV, 200 A, 10 ns) demonstrates a decrease of luminescence intensity excited with X-ray. So, irradiation with electron beam shows on destruction of luminescent defects.The nature of luminescence excited in the transparency range of stishovite is ascribed to a defect existing in the crystal after growth. Similarity of the stishovite luminescence with that of oxygen deficient silica glass and induced by radiation luminescence of α-quartz crystal presumes similar nature of centers in those materials.     

Laser cleaning of polymer surfaces

We have investigated the removal of small spherical particles from polymer surfaces by means of 193-nm ArF and 248-nm KrF laser light. Polystyrene (PS) particles with diameters in the range of 110 nm to 1700 nm and silica particles (SiO₂) with sizes of 400 nm and 800 nm are successfully removed from two different substrates, polyimide (PI) and polymethylmethacrylate (PMMA). Experiments were performed in air (23 °C, relative humidity 24–28%) and in an environment with a relative humidity (RH) of about 90%. Received: 13 July 2000 / Accepted: 14 July 2000 / Published online: 9 November 2000     

Linear and nonlinear optical absorption in different graded quantum wells modulated by intense laser field

The laser field dependence of the linear and nonlinear intersubband optical absorption in different graded quantum wells (GQWs) is investigated in the effective mass approximation. Results obtained show that the position and the magnitude of the linear and total absorption coefficients depend on the laser parameter and the shape of GQW. The resonant peak of total absorption coefficient can be bleached at sufficiently high incident optical intensities. Such a dependence of the exciting optical intensity on the external field strengths in different GQWs can be very useful for several potential device applications. It should point out that by applying the laser field we can obtain a blue shift or a red shift in the intersubband optical transitions.     

Generation of femtosecond vacuum-ultraviolet pulses

High power femtosecond pulses in the Vacuum Ultra Violet (VUV) have been generated through the nonlinear interaction of femtosecond KrF pulses with xenon and argon gas. Under near resonant two photon excitation of xenon by a femtosecond KrF laser, parametric four wave mixing processes lead to VUV pulses at 147 and 108 nm with pulse energies in the 10 µJ range. Tuning is demonstrated by mixing the KrF pulse with a 500 fs dye laser pulse at 497 nm, resulting in 165 nm emission. In argon, a three photon resonance leads to third harmonic generation at 83 nm and micro joule level pulses near 127 nm generated by a six wave mixing process. Since the spectra of the VUV pulses show an ionization-induced blue shift with increasing KrF laser intensity, the VUV pulses can be shown to have temporal duration less than the pulse width (450 fs) of the KrF laser. Blue shifting of the third harmonic of the KrF laser in argon is dominated by a reduction in the neutral gas density rather than by an increase in the electron density.