共查询到16条相似文献,搜索用时 78 毫秒
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采用固相反应法合成了单相的Ti_(1-x)(Hf_(0·919)Zr_(0·08))_xNiSn(x=0·00—0·15),并用放电等离子烧结方法制备出密实块体材料.研究了Hf和Zr同时在Ti位上的等电子合金化对Ti基半Heusler化合物热电性能的影响规律.结果表明:少量的Hf和微量的Zr在Ti位上的等电子合金化,显著地降低了体系的热导率κ,同时显著地提高了体系的Seebeck系数α.组成为Ti_(1-x)(Hf_(0·919)Zr_(0·08))_(0.15)NiSn的试样室温热导率为3·72W·m-1K-1,在700K时ZT值达到最大为0·56.与三元TiNiSn相比,在相同温度下ZT值的提高率为190%—310%. 相似文献
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采用机械合金化法制备了p型赝三元(Sb2Te3-Bi2Te3-Sb2Se3)合金粉体,对其进行XRD分析表明Te,Bi,Sb,Se单质粉末,经100h球磨后实现了合金化;SEM分析表明所得机械合金化粉体材料颗粒均匀、细小,颗粒尺寸在10nm到100nm量级.使用这种粉体制备了冷压烧结块体样品,在室温下测量了温差电动势率(α)和电导率(σ),研究了烧结温度对材料热电性能的影响,结果表明在低于300℃的烧结温区,样品室温下的热电性能随烧结温度的升高不断提高,功率因子(α2σ)由未烧结样品的0.59μW cm-1K-2升高到在300℃下烧结样品的15.9μW cm-1K-2,这一结果对确定材料的最佳烧结温度具有重要意义.
关键词:
赝三元热电材料
机械合金化
冷压
烧结 相似文献
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采用高纯元素直接熔融、淬火并结合放电等离子烧结方法制备了非化学计量比AgSbTe2+x(x=0—0.05)系列样品,研究了不同Te含量在300—600 K范围内对样品热电性能的影响规律.结果表明:随着Te含量的增加,Ag+离子空位浓度增加,空穴浓度和电导率大幅度提高,Seebeck系数减小.热导率随Te过量程度的增加略有增加,但所有Te过量样品的晶格热导率均介于0.32—0.49 W/mK之间,低于化学计量比样品的值,接近理论最低晶格热导率.AgS
关键词:
2')" href="#">AgSbTe2
非化学计量比
热电性能
热导率 相似文献
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为了进一步改善材料的性能和探索新的材料,将Mn2NiGa合金中的Ni元素分别用Fe和Co替代,制备了Mn50Ni25-xFe(Co)xGa25系列合金. 研究了Fe和Co元素对Mn2NiGa合金的结构、马氏体相变行为、磁性和机械性能等方面的影响.
关键词:
铁磁形状记忆合金
Heusler合金
50Ni25-xFe(Co)xGa25')" href="#">Mn50Ni25-xFe(Co)xGa25 相似文献
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用熔融退火结合放电等离子烧结法制备了In0.3Co4Sb12-xSex(x=0—0.3)方钴矿热电材料,探讨了In的存在形式,系统研究了Se掺杂量对结构和热电性能的影响.结果表明:In可以填充到方钴矿二十面体空洞处,过量In在晶界处形成InSb第二相,Se对Sb的置换使晶格常数减小,In填充上限降低;In0.3Co4Sb12-xSex样品呈n型传导,随着Se掺杂量的增大,载流子浓度降低,电导率下降,Seebeck系数增大,功率因子有所降低;由于在结构中引入了质量波动及晶格畸变,适量的Se掺杂可以大幅降低材料晶格热导率;样品In0.3Co4Sb12和In0.3Co4Sb11.95Se0.05的最大ZT值均达到1.0以上.
关键词:
掺杂
填充式方钴矿
热电性能 相似文献
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采用高能球磨法制备了Ti1-xNiSb(x=0,0.10,0.15,0.20,0.25)和Ti1-x-yScyNiSb (x=0.10,0.15;y=0.03,0.05)样品,并系统地研究了Sc掺杂对Ti1-xNiSb样品的物相、微结构以及电热输运性能的影响.实验结果表明,Sc掺杂能够有效降低载流子浓度,提高塞贝克系数,改善材料的电输运性能.此外,由于Sc掺杂能够提高原子间的结合能,从而有效减少了NiSb杂相.Ti1-x-yScyNiSb的晶格热导率随Sc掺杂而上升,这可归因于化学键的增强以及电声散射作用的减弱.但是载流子浓度的急剧下降导致样品的电子热导率显著下降,从而Ti1-x-yScyNiSb样品的总热,导率明显降低.最终,Ti0.8Sc0.05NiSb样品获得最佳的热电性能,其功率因子在973 K达到17.7μW·cm-1·K-2<... 相似文献
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采用熔融-淬火-放电等离子体烧结制备了Ag偏离化学计量比Ag1-xPb18SbTe20(x=0,0.25,0.50,0.75)样品,研究了Ag含量对样品热电传输性能的影响.结果表明,随Ag含量降低,样品中出现少量第二相Sb2Te3,样品载流子浓度增加到5×1018cm-3后不再增加.样品载流子迁移率随Ag含量降低先降低后增加,随着温度增加,载流子散射机理由电离杂质散射转变为声学波散射.随Ag含量降低,样品电导率增加而Seebeck系数降低,热导率增加.
关键词:
热电材料
mSbTem+2')" href="#">AgPbmSbTem+2
SPS
散射机理 相似文献
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Electronic structures and thermoelectric properties of solid solutions CuGa_(1-x) In_xTe_2 : A first-principles study
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The electronic structures of solid solutions CuGal_xlnxTe2 are systematically investigated using the full-potential all-electron linearized augmented plane wave method. The calculated lattice parameters almost linearly increase with the increase of the In composition, which are in good agreement with the available experimental results. The calculated band structures with the modified Becke-Johnson potential show that all solid solutions are direct gap conductors. The band gap decreases linearly with In composition increasing. Based on the electronic structure calculated, we investigate the thermoelectric properties by the semi-classical Boltzmann transport theory. The results suggest that when Ga is replaced by In, the bipolar effect of Seebeck coefficient S becomes very obvious. The Seebeck coefficient even changes its sign from positive to negative for p-type doping at low carrier concentrations. The optimal p-type doping concentrations have been estimated based on the predicted maximum values of the power factor divided by the scattering time. 相似文献
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用熔融法结合放电等离子烧结方法合成了Zn掺杂单相p型Ge基Ⅰ型笼合物Ba8Ga16ZnxGe30-x(x=3,4,5,6),探索Zn取代Ge对其热电性能的影响规律,结果表明:所制备的Ba8Ga16ZnxGe30-x化合物为p型传导,随Zn取代量x的增加,化合物室温载流子浓度Np逐渐增加,室温载流子迁移率μH和电导率逐渐降低.在所有试样中,Ba8Ga16Zn3Ge27化合物的Seebeck系数α在300—870K内始终最大,温度为300K时Seebeck系数为234μV/K,在700K附近达295μV/K.化合物的热导率随Zn取代量x的增加而降低.Ba8Ga16Zn3Ge27化合物在806K最大ZT值达0.38. 相似文献
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Hongxia Liu 《中国物理 B》2022,31(4):47401-047401
The (GeTe)x(AgSbTe2)100-x alloys, also called TAGS-x in short, have long been demonstrated as a promising candidate for thermoelectric applications with successful services as the p-type leg in radioisotope thermoelectric generators for space missions. This largely stems from the complex band structure for a superior electronic performance and strong anharmonicity for a low lattice thermal conductivity. Utilization of the proven strategies including carrier concentration optimization, band and defects engineering, an extraordinary thermoelectric figure of merit, zT, has been achieved in TAGS-based alloys. Here, crystal structure, band structure, microstructure, synthesis techniques and thermoelectric transport properties of TAGS-based alloys, as well as successful strategies for manipulating the thermoelectric performance, are surveyed with opportunities for further advancements. These strategies involved are believed to be in principle applicable for advancing many other thermoelectrics. 相似文献
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Electronic and thermoelectric properties of Mg_2Ge_xSn-_(1-x)(x=0.25,0.50,0.75) solid solutions by first-principles calculations
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The electronic structure and thermoelectric(TE) properties of Mg_2Ge_xSn_(1-x)(x = 0.25, 0.50, 0.75) solid solutions are investigated by first-principles calculations and semi-classical Boltzmann theory. The special quasi-random structure(SQS) is used to model the solid solutions, which can produce reasonable band gaps with respect to experimental results.The n-type solid solutions have an excellent thermoelectric performance with maximum zT values exceeding 2.0, where the combination of low lattice thermal conductivity and high power factor(PF) plays an important role. These values are higher than those of pure Mg_2Sn and Mg_2Ge. The p-type solid solutions are inferior to the n-type ones, mainly due to the much lower PF. The maximum zT value of 0.62 is predicted for p-type Mg_2Ge_(0.25)Sn_(0.75) at 800K. The results suggest that the n-type Mg_2Ge_xSn_(1-x) solid solutions are promising mid-temperature TE materials. 相似文献
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A. Bouhemadou 《哲学杂志》2013,93(12):1623-1638
The structural, elastic, electronic and thermal properties of M2SbP (M = Ti, Zr and Hf) were studied by means of a pseudo-potential plane-wave method based on the density functional theory within both the local density approximation and the generalised gradient approximation. The optimised zero-pressure geometrical parameters, i.e. the two unit cell lengths (a, c) and the internal coordinate (z), were in good agreement with available experimental and theoretical data. The effect of high pressure, up to 20 GPa, on the lattice constants shows that the contractions along the a-axis were higher than along c-axis. The anisotropic independent elastic constants were calculated using the static finite strain technique. Numerical estimations of the bulk modulus, shear modulus, Young's modulus, Poisson's ratio, average sound velocity and Debye temperature for ideal polycrystalline M2SbP aggregates were performed in the framework of the Voigt–Reuss–Hill approximation. The calculated band structures show that all studied materials are electrical conductors. Analysis of the atomic site projected densities showed that the bonding is of covalent–ionic nature with the presence of metallic character. The density of states at the Fermi level is dictated by the transition metal d–d bands; the Sb element has little effect. Thermal effects on some macroscopic properties of M2SbP were predicted using the quasi-harmonic Debye model, in which the lattice vibrations are taken into account. The variations of the volume expansion coefficient, heat capacity and Debye temperature with pressure and temperature in the ranges 0–50 GPa and 0–2000 K were obtained successfully. 相似文献
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