Highly efficient and compact laser-diode end-pumped Q-switched Nd:YVO4/KTP red laser

A laser-diode end-pumped acousto-optic (AO) Q-switched Nd:YVO₄/KTP red laser by using a plano-concave cavity was demonstrated for the first time. This linear cavity configuration could guarantee not only moderate intracavity focusing on KTP crystal but also good beam quality. Under the absorbed pump power of 14.8 W, the maximum average output power at 671 nm was obtained to be 1.37 W at the repetition frequency of 15 kHz, with the corresponding optical conversion efficiency of 9.3% and the pulse width of 33 ns. The energy of a single pulse and corresponding peak power are estimated to be 91.3 μJ and 2.77 kW, respectively. The rate equations are also numerically solved by introducing the nonlinear loss resulting from generation of second-harmonic wave.     

Compact and efficient Kerr-lens mode-locked diode-pumped actively Q-switched YVO4-Nd:YVO4 laser

By using a simple linear configuration, a stable and efficient YVO₄-Nd:YVO₄ laser, actively Q-switched by an acousto-optic modulator and passively mode-locked by KLM is realized, from which the great average output power, the high efficiency are obtained and the mode-locked pulse inside the Q-switched pulse has a repetition rate of 470 MHz. The nearly 100% modulation depth of the Q-switched mode-locked pulses can be obtained at any pump power over the threshold. Considering the Kerr-lens effect of laser medium and Q-switching by an acousto-optic modulator, we have analyzed the self-mode-locked YVO₄-Nd:YVO₄ laser by using the nonlinear ABCD propagation matrix and the hyperbolic fluctuation mechanism. The numerical solutions are in good agreement with the experimental results.     

Continuous-wave and Q-switched laser operation of Nd:Gd0.18Y0.82VO4 mixed crystal

Efficient continuous-wave (cw), passively Q-switched, and actively Q-switched laser operations are demonstrated with a mixed vanadate crystal of Nd:Gd_0.18Y_0.82VO₄ under diode pumping. In a cw operation, an output power of 8.25 W is obtained at a maximum available incident pump power (P_in) of 15 W, with a slope efficiency of 56%. Using a Cr⁴⁺:YAG crystal of initial transmission of 62% as the saturable absorber for Q-switching, an average output power of 3.05 W is generated at pulse repetition frequency (PRF) of 16.7 kHz when the laser is pumped with the same maximum P_in. The pulse energy, pulse duration, and peak power are 183.3 μJ, 6.0 ns, and 30.6 kW, respectively. When actively Q-switched by an acousto-optic modulator, the laser produces an average output power of 5.5 W at PRF of 30 kHz with 16.2 W of pump power incident upon the laser crystal. The pulse energy, duration, and peak power are measured to be 183 μJ, 10.5 ns, and 17.5 kW, respectively.     

The acousto-optic Q-switched mode-locking Nd:YVO4 laser

Q-switched mode locking (QML) has been observed in acousto-optic Q-switched Nd:YVO₄ laser that contained no mode-locking components. It was found that QML was easily realized in a long cavity and the modulation depth was observed to increase with increased cavity length. The maximum modulation depth was as high as 90%. This phenomenon is explained by the introduction of gain-related effect in the gain medium. The longitudinal modes at higher frequency, than the central frequency of the gain profile, experience positive guiding, which results in mode locking of these modes.     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

Theoretical and experimental study of a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO4/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber

By considering the Gaussian transversal and longitudinal distributions of the intracavity photon density as well as the walk-off effect of KTP crystal, the coupled rate equations of the doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs saturable absorber are given. These equations are solved numerically and the doubly Q-switched green laser characteristics, such as the pulse width and the pulse symmetry, have been obtained. In the experiment, a diode-pumped doubly Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with AO and GaAs is presented. This doubly Q-switched green laser can generate the almost absolutely symmetric pulse profile with the shorter pulse width and the higher power than the singly Q-switched green laser. The experimental results are in agreement with the theoretically numerical calculations.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

LD-pumped actively Q-switched Nd:GdVO4/KTP red laser

LD-pumped actively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP red laser has been introduced. A maximum red average output power of 0.78 W at 671 nm was obtained at pulse-repetition frequency (PRF) of 15 kHz and the optical conversion efficiency was 6.5%. At the incident pump power of 12 W, the shortest laser pulse occurred at PRF of 15 kHz. Its full-width at half-maximum and the highest peak power were measured to be 35.8 ns and 3.38 kW. The largest single pulse energy of 56.3 μJ was achieved at PRF of 10 kHz. The influence factors on the Q-switched Nd:GdVO₄/KTP red laser have been discussed.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Control of the pulse width in a diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript>/KTP green laser with GaAs saturable absorber

By varying the positions of the saturable absorber in the laser axis and the pump beam waist in the gain medium, respectively, we have theoretically and experimentally studied the control of the pulse width in a diode-pumped passively Q-switched Nd:YVO₄/KTP green laser with GaAs saturable absorber. A rate equation model is introduced, in which the intracavity photon density is assumed to be Gaussian spatial distribution, the longitudinal variation of the intracavity photon density and the pump beam spatial distribution are also considered. The experimental results are consistent with the numerical calculations of the rate equations.     

Control of the pulse width of a laser-diode end-pumped passively Q-switched solid-state laser

We theoretically and experimentally study different techniques to control the pulse width of a laser-diode-pumped passively Q-switched solid-state laser. It is shown that varying the laser beam radius in the saturable absorber and the pump beam radius in the gain medium provide an efficient means to control the pulse width. The experiments performed on a laser-diode-pumped Nd:YVO₄ laser passively Q-switched by a Cr⁴⁺:YAG saturable absorber are consistent with the theoretical calculations obtained from the rate-equations model, in which the intracavity photon density is assumed to be Gaussian spatial distribution, and the longitudinal variation of the intracavity photon density and the pump beam spatial distribution are also considered.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.     

Diode-pumped Q-switched Nd:GdVO4/KTP green laser formed with a flat–flat resonator

A diode-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green laser formed with a flat–flat resonator was demonstrated. 3.05 W of average green output power at pulse repetition frequency (PRF) of 40 kHz was obtained with an optical conversion efficiency of 18.4%, the effective intracavity frequency-doubling efficiency was 57%. At the incident pump power of 15 W, the shortest laser pulse occurred at PRF of 25 kHz with FWHM width of 14 ns, yielding the highest peak power of 7.44 kW; while the largest pulse energy of 0.14 mJ was achieved at PRF of 15 kHz.     

Theoretical analysis and experimental research on thermal focal length of a YVO4/Nd:YVO4 composite crystal

This paper investigates the temperature field distribution and thermal focal length within a laser diode array (LDA) end-pumped YVO4/Nd:YVO4 rectangular composite crystal. A general expression of the temperature field distribution within the Nd:YVO4 rectangular crystal was obtained by analysing the characteristics of the Nd:YVO4 crystal and solving the Poisson equation with boundary conditions. The temperature field distributions in the Nd:YVO4 rectangular crystal for the YVO4/Nd:YVO4 composite crystal and the Nd:YVO4 single crystal are researched respec- tively. Calculating the thermal focal length within the Nd:YVO4 rectangular crystal was done by an analysis of the additional optical path differences (OPD) caused by heat, which was very identical with experimental results in this paper. Research results show that the maximum relative temperature on the rear face of the Nd:YVO4 crystal in the composite crystal is 150 K and the thermal focal length is 35.7 mm when the output power of the LDA is 22 W. In the same circumstances, the experimental value of the thermal focal length is 37.4 mm. So the relative error between the theoretical analysis and the experimental result is only 4.5%. With the same conditions, the thermal focal length of the Nd:YVO4 single crystal is 18.5 mm. So the relative rate of the thermal focal length between the YVO4/Nd:YVO4 crystal and the Nd:YVO4 crystal is 93%. So, the thermal stability of the output power and the beam quality of the YVO4/Nd:YVO4 laser is more advantageous than the laser with Nd:YVO4 single crystal.     

Q-switching of a diode-pumped Nd : YVO4 laser with GaAs nonlinear output coupler

Passive Q-switching of a diode-pumped Nd : YVO₄ laser was demonstrated using GaAs as an output coupler and as a saturable absorber. When pumped with a 3-W diode laser at 809 nm, the highly compact laser produced 12-μJ pulses of 2.2 ns in duration at 1.064 μm in a single transverse mode, corresponding to a peak power of 5.6 kW.     

Diode-pumped doubly passively Q-switched Nd:LuVO4/KTP green laser with Cr:YAG and GaAs saturable absorbers

A diode-pumped doubly passively Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with Cr⁴⁺:YAG and GaAs saturable absorbers is demonstrated. This laser can generate the shorter pulse width with higher peak power compared with the singly passively Q-switched green laser with Cr⁴⁺:YAG or GaAs saturable absorber. The relations between the pulse symmetry and the ratio of the small-signal transmissions of two saturable absorbers are investigated. By reasonably choosing the small-signal transmissions of both saturable absorbers, the doubly passively Q-switched green laser can generate the much more symmetric pulse profile. The coupled rate equations are used to simulate the passively Q-switched process of the green laser by considering the Gaussian transversal and longitudinal distributions of the intracavity photon density. The numerical results of the equations are consistent with the experimental results.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

Low threshold, actively Q-switched Nd:YVO4 self-Raman laser and frequency doubled 588 nm yellow laser

We reported an actively Q-switched, intracavity Nd³⁺:YVO₄ self-Raman laser at 1176 nm with low threshold and high efficiency. From the extracavity frequency doubling by use of LBO nonlinear crystal, over 3.5 mW, 588 nm yellow laser is achieved. The maximum Raman laser output at is 182 mW with 1.8 W incident pump power. The threshold is only 370 mW at a pulse repetition frequency of 5 kHz. The optical conversion efficiency from incident to the Raman laser is 10%, and 1.9% from Raman laser to the yellow.