Design and Fabrication of Silcon Microlens with Low SAG for 528(H) × 528(V) Infrared Charge-Coupled Device Application

Microlens array is an important optical element to improve the photosensitivity of charge-coupled device (CCD). In this paper, a monolithic integration technology between microlens and 528 × 528 element PtSi Schottky-barrier infrared charge-coupled device (IRCCD) with a pixel size of 30m × 30m has been developed. The microlens array with low sag and long focal length is designed based on geometrical optics theory. It is directly formed on the back side of the substrate in IRCCD chip using successive photolithography and A⁺ ion beam etching (IBE) technology. The microlens array is characterized by both surface stylus and point spread function (PSF). The experiment results of integration device between IRCCD and microlens array indicate that the optical signal response is improved obviously and a responsivity increase by a factor of 1.8 in the operation band.     

Design and fabrication of a negative microlens array

An operation model of a negative microlens array is demonstrated. The array consists of two kinds of materials with different refractive indices. First of all, a positive microlens array with 256×256 elements serving as a pattern is fabricated by argon ion beam etching on the quartz. The diameter and average corona height of the element are 28 and 0.638 μm, respectively. The spacing between two neighboring elements is 2 μm. In the second phase, after being coated by epoxy, the positive microlens array pattern is spun and baked, leading to a complex negative microlens array. Surface stylus measurement shows that the surface of the positive quartz microlens array is smooth and uniform. Focal length measurement of the negative microlens array indicates that the focal length region with −731±3 μm is in good agreement with the theoretical calculation value of −729 μm.     

Monolithic Integration of Diffractive Microlens Arrays and Infrared Focal Plane Arrays

Monolithic integration method has been demonstrated to increase the fill factor of the infrared focal plane arrays (IRFPA). Which is consists of 256×256 Pt-Si schottky barrier charge coupled devices(CCD) operation in 3-5m IR region. The relative silicon 256×256 element diffractive microlens arrays have been fabricated on the back side of the substrate of the IRFPA using binary optics technology. The aligning process between IRFPA and microlens arrays on each side of the substrate has been completed by IR mask aligner. The testing results show that the imaging quality is very good and the average optical response of the IR FPA is increased by a factor of 3.0, which is improved by about 25% compared with the hybrid integration method in the previous work.     

Design and Fabrication of Microlens Array for Near-Field Vertical Cavity Surface Emitting Laser Parallel Optical Head

A GaP microlens for collecting laser light was developed in the tip of a near-field probe. It is important to realize a near-field optical probe head with high throughput and a small spot size. The design and fabrication results of the GaP microlens array are described. The most suitable GaP microlens with a probe was calculated as having a 10 μm radius using the two-dimensional finite difference time domain (2-D FDTD) method. The full width half maximum (FWHM) spot size variation and optical power density tolerance were calculated as 157 nm ± 5 nm and 7%, respectively. A spherical GaP microlens was fabricated with a radius of 10 μm by controlling the Cl₂/Ar gas mixture ratio. The difference between the theoretical spherical shape and the fabricated GaP microlens was evaluated as 40 nm at peak to valley. The FWHM spot size and optical throughput of the fabricated microlens were measured as 520 nm and 63%, respectively. The microlens was the same as a theoretical lens with a 10 μm radius. The micron-lens array fabrication process for a near-field optical head was demonstrated in this experiment.     

Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film

N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10⁻⁴ cm²/V s and 1.1 × 10⁻⁴ cm²/V s under the electric field of 500 (V/cm)^1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.     

Linear High-Tc YBa2Cu3O7?δ Superconducting Thin Film Infrared Detectors Coupled with a Cylindrical Microlens Array in Quartz Glass Substrate

Monolithic linear cylindrical microlens array in a quartz glass substrate is fabricated using photolithography and ion beam etching technique, the high-Tc YBa₂Cu₃O_7– superconducting thin films are deposited through excimer laser scanning ablation, the superconducting thin films are patterned by photolithographic method and ion beam etching technique, and the hybrid structure of the microlens array component and the superconducting IR detectors has been obtained using an IR glue to cement the microlens component onto the superconducting device. We also investigate the optical response characteristics of the hybrid device in the optical spectral region of 1 ~ 5 m, as follows. The average optical responsivity of the hybrid device is 1.6×10⁴ V/W, average noise equivalent power is 2.3×10^–12 WHz^–1/2, average detectvity is 3.2×10⁹ cmHz^1/2W^–1, and the non-uniformity of detectvity (D*) is not more than 14%. The experimental results show that the performance of the superconducting device is improved notably using a quartz glass refractive microlens array as the incident IR radiation concentrators.     

A novel infrared absorbing structure for uncooled infrared detector

In this paper, we proposed a novel infrared absorbing structure for uncooled infrared detectors. The infrared absorber makes use of a quarter-wavelength structure composed of a dielectric layer, a protecting layer, an active layer, a supporting layer and a reflecting layer. Sputtered amorphous silicon is used as a dielectric layer because of its high refractive index. We fabricated the uncooled microbolometer with the proposed infrared absorbing structure by surface micromachining method. Then we characterized various bolometric properties such as thermal conductance, thermal time constant, responsivity and infrared absorptance. The fabricated bolometer showed the thermal conductance of 6.72 × 10⁻⁷ W/K, the thermal mass of 4.43 × 10⁻⁹ J/K, the thermal time constant of 6.6 ms and the responsivity of 7.76 × 10³ V/W at 10 Hz chopper frequency and 9.22 μA bias current. From the results, the estimated absorptance is about 80%. We expect that the proposed absorbing structure shows high infrared absorption and high performance of uncooled microbolometer.     

A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics

Near infrared (NIR) detectors, operating in the 1.3–1.6 μm region, are key elements in a number of applications ranging from optical communications to remote sensing. InGaAs and Ge are currently the materials of choice for the fabrication of NIR detectors due to their good absorption and transport properties. However, as the required performances increase (bit-rate in optical communications, number of pixels in imaging, etc.), it becomes more and more important to reduce the separation from detectors and driving/biasing and amplifying electronics, by integrating the two components on the same chip.We demonstrate an array of NIR detectors monolithically integrated with standard silicon CMOS readout electronics. The employed low temperature process allowed the integration of the detectors as the last step of chip fabrication. The integrated micro-system consists of a linear array of 120×120 μm² pixels, an analog CMOS multiplexer and a transimpedance amplifier. The chip exhibits a good photoresponse in the NIR, with responsivities as high as 43 V/W at 1.3 μm, dark currents of 1 mA/cm² and inter-pixel cross-talk better than −20 dB.     

Technique for Monolithic Fabrication of Microlens Arrays Integrated with Infrared CCD

Based on scalar diffraction theory, 8-phase-level 256×256 elements diffractive microlens array with element dimension of 50×33 μm2 have been fabricated on the back-side of PtSi(3～5 μm) infrared CCD. The measurement results indicated that the ratio of the signal-to-noise of the infrared CCD with microlens was increased by a factor of 2.8.     

Technique for Monolithic Fabrication of Microlens Arrays Integrated with Infrared CCD

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Theoretical calculations of a square multilayer Bragg–Fresnel lens by quantum theory

A theoretical method based on the quantum scattering theory is presented to evaluate the performances of a two-dimensional (2-D) focusing square multilayer Bragg–Fresnel lens. The numerical application results of the square multilayer Bragg–Fresnel lens working at 0.7 nm wavelength (W/Si 25 periods with a double layer thickness of 5.38 nm, the size of the diffraction pattern is about 291×291 μm, the size of the center square in the diffraction pattern is 21.4×21.4 μm, and the size of the smallest square in the diffraction pattern is 0.39×0.39 μm) are given. Our theoretical results are compared with the experimental results of the linear Bragg–Fresnel lens reported by other researchers; an analysis and a discussion are carried out regarding the advantages of an optical system based on the 2-D focusing square multilayer Bragg–Fresnel lens, in contrast to a Kirkpatrick–Baez optical system on the basis of a two-linear Bragg–Fresnel lens.     

Molecular orientation and morphology of contact printed α-quaterthiophene films on gold

We present contact printing as a technique to deposit α-quaterthiophene (α-4T) films from the solid phase onto gold. The molecular orientation and morphology of both the printed film and the original polycrystalline α-4T film on silica were investigated with low energy ion scattering (LEIS), atomic force microscopy (AFM), X-ray diffraction (XRD) and optical microscopy. We show that the strong interaction between clean gold and α-4T induces a drastic change in the molecular orientation and morphology of a 380 nm thick α-4T film. On gold the α-4T molecules are orientated with the thiophene rings parallel to the substrate and form rod-like crystallites (typically 13×1.3 μm²), whereas on silica α-4T molecules stand almost upright and form large cobblestone-like crystallites (typical diameter 10 μm). Exposure of α-4T to a low energy ion beam (dose <1×10¹⁴ 3 keV ³He⁺ ions/cm²) prior to printing causes polymerisation, which decreases the ability to print and alters the morphology of the printed film.     

High repetition rate mid-infrared laser source

An efficient, high-power mid-infrared laser source based on ZnGeP₂ (ZGP) optical parametric oscillator (OPO) is presented. Using a Q-switched Ho:YAG laser as the pump source a total output power of 10.6 W was obtained in the 3–5 μm band at 10 kHz and 8.5 W at 20 kHz. The Ho:YAG laser was pumped by two diode-pumped polarization coupled Tm:YLF lasers. Optical-to-optical efficiency achieved is >8.8% (laser-diode 792 nm to mid-IR 3–5 μm). With a commercial PtSi infrared camera (256×256 pixel focal plane array, 24 μm pitch) the pointing stability of Ho pump, signal and idler beam was measured to be better than 30 μrad. Whilst propagating the OPO beams over 100 m, little absorption for the idler beam was observed, resulting in a significant higher peak-to-peak value of ±22%, whereas the peak-to-peak stability of the signal pulses remained unchanged (±13%). To cite this article: M. Schellhorn et al., C. R. Physique 8 (2007).     

In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams

Focused ion beam implantation of gallium and dysprosium was used to locally insulate the near-surface two-dimensional electron gas of Al_xGa_1−xN/GaN heterostructures. The threshold dose for insulation was determined to be 2×10¹⁰ cm⁻¹ for 90 keV Ga⁺ and 1×10⁹ cm⁻¹ for 200 keV Dy²⁺ at 4.2 K. This offers a tool not only for inter-device insulation but also for direct device fabrication. Making use of “open-T” like insulating line patterns, in-plane gate transistors have been fabricated by focused ion beam implantation. An exemplar with a geometrical channel width of 1.5 μm shows a conductance of 32 μS at 0 V gate voltage and a transconductance of around 4 μS, which is only slightly dependent on the gate voltage.     

Accuracy control of three-dimensional Nd:YAG laser shaping by ablation

Improving the dimensional accuracy along the optical axis without decreasing the materials removing rate is a key issue in three-dimensional laser shaping. This paper presents a concept for performing three-dimensional laser shaping by directly using machining laser as the photo source of the non-contacting measuring device. Due to the high power measuring photo source and a 1.06 μm bandpass filter, the interference caused by the emission light of ablated surface can be effectively avoided, the delay time is not needed to be inserted between the laser pulse and the measurement. So the measurement will not decrease the material removal rate and productivity. By using this system, the shaping accuracy of 30 μm can be achieved at the removing rate of about 4.0×10⁻² mm³/sec for Si₃N₄ ceramic, both are much better than the results obtained before.     

Compositionally asymmetrical multiquantum wells: “Pseudo-molecules” for giant optical nonlinearities in the infrared (9–11 μm)

Intersubband transitions in quantum well have extremely large oscillator strengths and induce strong nonlinear effects in structures where inversion symmetry is broken, realized by growing AlGaAs quantum wells with asymmetrical A1 gradients. These compositionally asymmetrical multiquantum wells may thus be viewed as giant “quasimolecules” optimized for optimal nonlinearities in the mid infrared. Optical rectification as well as second harmonic generation have been measured in those structures using a continuous CO₂ laser. At 10.6 μm the nonlinear coefficients are more than 3 orders of magnitude higher in these samples than for bulk GaAs (i.e. χ₀⁽²⁾ = 5.3 × 10⁻⁶m/V, χ_2ω⁽²⁾ = 7.2 × 10⁻⁷ m/V) and are in good agreement with theoretical predictions. We present more complex “pseudo-molecules” involving weakly coupled quantum wells. The optical rectification effects in these devices are so large χ₀⁽²⁾ = 1.6 × 10⁻³ m/V) that application to infrared detection may be envisioned.     

Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices

Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey “specpure”-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (σ), mobility (μ) and carrier concentration (n) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is σ=0.06×10³ ohm⁻¹ cm⁻¹ (n-type) (which is almost at the edge of semiconductivity range), carrier density n=0.316×10¹⁹ cm⁻³ and mobility μ=98 cm²/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing.     

Parameter optimization and characteristic analysis of a polymer microring resonant wavelength multiplexer

Novel formulas of transmission functions are presented, some parameters are optimized, and transmission characteristics are analyzed for a polymer microring resonant wavelength multiplexer around the central wavelength of 1.55 μm with the wavelength spacing of 5.6 nm and with eight vertical output channels. The computed results show that the designed device possesses some excellent features including the 3 dB bandwidth of 0.25 μm, weaker background light of 3.8×10⁻⁴, smaller inserted loss of less than 0.6 dB, and lower crosstalk below −20 dB for every vertical output channel.     

Photoetching of spherical microlenses on glasses using a femtosecond laser

We fabricated spherical microlenses on optical glasses by femtosecond laser direct writing (FLDW) in ambient air. To achieve good appearances of the microlenses, a meridian-arcs scanning method was used after a selective multilayer removal process with spiral scanning paths. A positive spherical microlens with diameter of 48 μm and height of 13.2 μm was fabricated on the surface of the glass substrate. The optical performances of the microlens were also tested. Compared to the conventional laser direct writing (LDW) technique, this work could provide an effective method for precise shape-controlled fabrication of three-dimensional (3D) microstructures with curved surfaces on difficult-to-cut materials for practical applications.     

A compact 1.06/1.32/2.94 μm pulsed laser for dentistry

A three-wavelength pulsed laser for dental application is developed. The laser houses the Nd:YAG resonator (1.06/1.32 μm) for soft-tissue treatment and Er:YAG resonator (2.94 μm) for caries removal and fits and fissure treatment. Two heads share the cooling unit and two identical high-voltage power supply modules in order to achieve compactness. The Nd:YAG laser has 10 W at 1.06 μm and 7 W at 1.32 μm with a pulse duration of 100 μs. An Er:YAG laser of 2.94 μm has 3.5 W, 20 Hz and a pulse duration of 250 μs. The beams are delivered through fibers and the laser size is 75×55×32.5 cm.