电注入着色溴化钾晶体光谱特性及激活能

利用电注入着色装置,分别使用点阴极与平板阳极和点阳极与平板阴极在不同条件下对溴化钾晶体进行电注入着色.点阴极注入时,在着色晶体中产生V色心和F色心,计算得到F色心激活能0.84 eV.点阳极注入时,在着色晶体中产生V色心,计算得到V色心激活能0.49 eV.对着色晶体进行系统的光谱测量,确定色心光谱吸收带的光谱参数.对比两种情况下测得的电流～时间关系曲线,解释其色心形成机理.     

溴化钾晶体电注入着色临界温度及机理

用自行研制的电注入装置,对溴化钾晶体进行电注入并使之有效着色.由基本理论可以得出溴化钾晶体电注入着色临界温度理论值为598 K,并依此拟定和实施具体实验方案.通过实验进行得到电注入着色临界温度实验值为603 K.达到临界温度后,溴化钾晶体被着色,产生F色心.研究结果表明,临界温度理论值与实验值符合得很好.借助测得的电流～时间关系图,对经此种电注入着色晶体中色心形成提出机理解释.     

氧化镁晶体电注入着色及光谱特性

用自行研制的电注入装置,在不同条件下对氧化镁晶体进行电注入并使之有效着色.在着色晶体中有效地产生大量F、F2和一些未知色心,并探讨了色心形成机理.对着色氧化镁晶体进行了系统光谱测量,确定这些色心的吸收光谱带光谱参数,并对色心形成过程进行分析.结果表明,随着电压的升高,通电时间增长,色心的浓度增大,电注入仅经单步过程,便可获得以往采用其他着色方法多步处理才能产生的多种类色心,更具实用性.     

电注入着色氯化钠晶体光谱特性及激活能

用自行研制的电注人装置,在不同条件下对氯化钠晶体进行电注人并使之有效着色.在着色晶体中有效地产生大量F、胶体C和N心,并研究了色心形成机理.对着色氯化钠晶体进行了系统光谱测量确定出这些色心的吸收光谱带光谱参数.通过计算得到氯化钠晶体F色心激活能为0.97eV.     

点阳极电注入氯化钠晶体光谱特性及机理

利用电注入着色装置,使用点阳极和平板阴极在不同条件下对氯化钠晶体进行电注入着色.在着色晶体中产生大量V、F、胶体C和N心.对着色晶体进行系统的光谱测量,确定色心光谱吸收带的光谱参数.研究不同注入条件对色心浓度的影响.测得电流～时间关系曲线.计算出V色心的激活能小于F色心激活能,进而解释色心形成机理.     

溴化铈晶体的生长与性能研究

采用改进的坩埚下降法生长出φ1.5"×1.5"的无宏观缺陷的溴化铈晶体毛坯.研究测试了溴化铈晶体的荧光光谱、紫外-可见透射光谱及光输出、能量分辨率、本底等闪烁性能.结果表明:在光致激发下,溴化铈晶体的发光主峰位于390 nm;其10 mm厚度样品在390nm处的光透过率为60;;φ1"×1"大小的样品在137Cs源的662 keV伽马射线作用下能量分辨率为4.26;,光输出相当于NaI(Tl)晶体的125;;溴化铈晶体中在0.005 Bq/g探测限下未检测到138La和227Ac元素,本底水平显著低于掺铈溴化镧晶体.     

On the Analysis of Hydrogen in as grown and Ion Implanted GaAs Single Crystals

Hydrogen detection and analysis was carried out on the undoped semi‐insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 1020 atoms/cc) has been observed on the as‐grown samples and further high concentration of atomic hydrogen (total concentration of 7 x 1020 atoms/cc) was found at the surface and was found to be decreasing with depth after 100 nm. Further the low energy hydrogen and oxygen ions implanted separately in GaAs at room temperature were also analysed by ERDA technique. From the analysis, the projected range (Rp) of 100 keV hydrogen and oxygen ions in GaAs was determined to be 891 nm (with Δ Rp equal to 320 nm), 170 nm (with Δ Rp equal to 120 nm) respectively. The experimentally determined values of both Rp and Δ Rp are more as compared with the values obtained using the TRIM theoretical program. Low temperature (4K) photoluminescence (PL) measurements of un‐implanted and H⁺ implanted samples show the passivation of intrinsic deep level defect EL2 and shallow acceptor impurity carbon by the low energy implanted hydrogen ions. The low energy hydrogen implantation may be used as a method of hydrogenation for passivation.     

Li离子浓度对铌酸钾锂晶体[NbO6]7-八面体畸变的影响

用顶部籽晶法生长了一批不同组成的铌酸钾锂晶,用同步辐射X射线分析了晶体结晶特性,用Philips PW2400 X射线荧光光谱法测量了晶体的组成.对三种组成的晶体样品测量了红外拉曼光谱,分析了晶体中组分离子浓度对晶体红外拉曼光谱特征的影响,结果表明,晶体中位于C格位的Li离子浓度对晶体拉曼光谱产生了强烈的影响,影响的本质在于晶体中Li含量的提高导致晶体中[NbO6]7-八面体畸变程度加大,对八面体晶格振动产生了强烈的影响.     

Optical and Luminescence Properties of YAlO3 ‐Tm Crystals

The results on optical absorption, photoluminescence and thermoluminescence of YAP‐Tm crystals of 1 at.% and 4 at.% of Tm are presented as well as influence of UV‐, γ‐radiation and thermal treatments on optical and luminescence properties of the crystals. The blue‐green luminescence of defect centers was observed in YAP‐Tm crystals at Ar⁺‐laser excitation. The possibility of energy transfer processes between defect centers and Tm³⁺ ions was shown.     

Crystal growth and spectral analysis of Dy3+ and Er3+ doped KPb2Cl5 as a mid‐infrared laser crystal

This paper reports crystal growth and optical characteristics of dysprosium (Dy³⁺) and erbium (Er³⁺) doped mid‐infrared laser crystal ternary‐potassium‐lead‐chloride (KPb₂Cl₅). Two transparent crystals with good optical quality have been grown successfully by using the Bridgman technique,the largest crystal size reaches up to ∅︁10×60mm². Measurements of X‐ray diffraction(XRD) and absorption spectra were carried out. Based on Judd‐Ofelt theory, the intensity parameters Ω_t(t=2,4,6), the experimental and theoretical oscillator strengths have been obtained.The intensity parameters Ω_t(t=2,4,6) of Er³⁺:KPb₂Cl₅ were calculated to be Ω₂=5.10×10^‐20 cm², Ω₄=1.25×10^‐20 cm², Ω₆=0.83×10^‐20 cm², and the values for Dy³⁺:KPb₂Cl₅ were calculated to be Ω₂=6.26×10^‐20 cm², Ω₄=2.45×10^‐20 cm², Ω₆=0.04×10^‐20 cm² respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

阴离子掺杂钨酸铅晶体的生长与发光性能研究

本文报道了阴离子F~-, Cl~-, I~- 和S~(2-)掺杂的PbWO_4晶体的生长与发光性能.通过对掺杂PbWO_4晶体的X射线粉末衍射、紫外可见区的透过光谱、光致激发、光产额和发光衰减特性进行了测试表征,结果表明:F~-掺杂能使PbWO_4晶体在短波方向的透过率明显提高,显著提高PbWO_4晶体的发光强度,但增加的发光强度主要来自于慢发光的贡献.而随着掺杂阴离子半径和电荷数的增加,PbWO_4晶体的发光强度逐渐降低,并且PbWO_4晶体吸收截止边逐渐向长波方向移动.     

Ho~(3+)∶La_2CaB_(10)O_(19)晶体生长和光谱性能(英文)

采用顶部籽晶法生长Ho3+∶La2CaB10O19晶体。测试了晶体的X射线衍射谱图以及晶体器件的摇摆曲线,半峰宽为21.6 arcsec,晶体结晶质量良好。在室温下测试了吸收光谱、发射光谱和荧光寿命。应用Judd-Ofelt理论评价了Ho3+∶La2CaB10O19晶体的光谱性能。分别计算了Ho3+的唯象强度、谱线强度、辐射寿命、荧光分支比等参数。     

Structural and Spectral Studies of ZnKPO4 · 6H2O Crystals

Zinc Potassium Phosphate Hexahydrate (ZPPH) is analogous to naturally occurring struvite. ZPPH crystals are grown by slow evaporation technique. These crystals are characterised by x‐ray and infrared studies. Powder x‐ray pattern indicates the orthorhombic crystal structure analogous to struvite with unit cell parameters a = 5.964, b = 5.808 and c = 12.495 Å. Infrared spectrum is characteristic of H₂O and PO₄^3‐ radicals.     

Czochralski Growth of Potassium Lithium Niobate Single Crystals with Low Li Content and Their Characterization

Single crystalline and crack free potassium lithium niobate (KLN) single crystals with low Li content were grown by the Czochralski method. The crystal composition can be written as K_2.60Li_1.17Nb_5.44O₁₅ (=K_2.95Li_1.33Nb_6.17O₁₇) which contain relatively fewer Li ions than ferroelectric K₃Li₂Nb₅O₁₅ crystals. All experimental results show that the deficiency of the Li ions in the KLN crystals strongly influences their physical properties. Especially, the as‐grown crystals do not indicate any signature for a ferroelectric phase transition in contrast to the ferroelectric K₃Li₂Nb₅O₁₅ crystals. However, due to ionic conduction, the temperature dependence of the dielectric constant of such KLN‐2 crystals show a broad anomaly near 300°C. In addition, the existence of proton defects can be revealed by infrared absorption spectroscopy near 3500 cm^‐1 in as‐grown crystals.     

钕镱共掺四钼酸钆钡晶体的生长与光谱性能研究

通过单晶提拉法制备了钕镱共掺四钼酸钆钡(BaNd2x Yb2yGd2(1-x-y)(MoO4)4,x=0.1,0.05,0.01,y=0.1)晶体,研究了其热学性能和光谱性能.结果表明,钕镱共掺四钼酸钆钡晶体的熔点为1070.3℃,采用Judd-Ofelt理论计算得到了5at; Nd3+/10at; Yb3+∶BaGd2(MoO4)4晶体中Nd3+的强度参数Ω2.4.6,4F3/2能级的自发辐射几率、跃迁的荧光分支比以及辐射寿命.通过研究该晶体的吸收光谱、荧光光谱以及Yb3+的2 F5/2能级的荧光寿命,分析了Nd3+对Yb3+的敏化作用,对比发现掺杂浓度为1 at; Nd3+/10at; Yb3+的BaGd2(MoO4)4在1013 nm处的荧光寿命最长.