A new positron annihilation lifetime spectrometer based on DRS4 waveform digitizing board

A new simple digital positron lifetime spectrometer has been developed. It includes a DRS4 waveform digitizing board and two scintillation detectors based on the XP2020Q photomultiplier tubes and LaBr₃ scintillators. The DRS4 waveform digitizing can handle small pulses, down to few tens of millivolts, and its time scale linearity and stability are very good. The new system has reached a 206 ps time resolution, which is better than the conventional analog apparatus using the same detectors. These improvements make this spectrometer more simple and convenient in comparison with other spectrometers, and it can be applied to the other scintillation timing measurements with picosecond accuracy.     

A new positron annihilation lifetime spectrometer based on DRS4 waveform digitizing board

Abstract： A new simple digital positron lifetime spectrometer has been developed. It includes a DRS4 waveform digitizing board and two scintillation detectors based on the XP2020Q photomultiplier tubes and LaBr3 scintillators. The DRS4 waveform digitizing can handle small pulses, down to few tens of millivolts, and its time scale linearity and stability are very good. The new system has reached a 206 ps time resolution, which is better than the conventional analog apparatus using the same detectors. These improvements make this spectrometer more simple and convenient in comparison with other spectrometers, and it can be applied to the other scintillation timing measurements with picosecond accuracy.     

Compact 10 GHz loopback arrayed-waveguide grating for high-fidelity optical arbitrary waveform generation

We demonstrate a high-performance optical arbitrary waveform shaper based on a single 10 GHz arrayed-waveguide grating with 64 loopback waveguides and integrated amplitude and phase modulators on each waveguide. The design is compact and self-aligning and allows for bidirectional operation. The device's complex transfer function is manipulated and measured over the full 640 GHz passband. To demonstrate optical arbitrary waveform shaping, high-fidelity 15-line shaped waveforms are measured with cross-correlation frequency-resolved optical gating.     

基于DRS4测试板的数字波形分析方法（英文）

使用不同的方法来确定La Br3晶体信号的到达时间。在文中信号经过光电倍增管的放大之后由DSR4测试板进行数字采集,其中DRS4是由瑞士PSI研究所生产的高带宽、低功耗以及快读出时间的开关电容阵列。这些优势使得DRS4很具有吸引力,很多实验将传统的ADC与TDC替换为DRS4。采集的波形可以通过不同的方法进行后续处理。其中包括:(1)恒分甄别、(2)波形拟合、(3)PMT脉冲模型法以及(4)均值过滤法。文中实现的恒分甄别的时间分辨与使用模拟电路获取的平均时间分辨相比没有提高。高斯波形拟合法虽然与数字CFD的结果相当,但是却更加耗时。均值滤波法虽然容易实现,但是通过这个方法得到的时间分辨与采样时间在一个量级。而PMT脉冲模型法得到的平均时间分辨为195.4 ps,优于模拟信号的恒分甄别的时间分辨254.7 ps。     

The parallel processor for the character extraction of digitizing image

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Study of time resolution by digital methods with a DRS4 module

A new Digital Pulse Processing(DPP) module has been developed, based on a domino ring sampler version 4 chip(DRS4), with good time resolution for La Br3 detectors, and different digital timing analysis methods for processing the raw detector signals are reported. The module, composed of an eight channel DRS4 chip, was used as the readout electronics and acquisition system to process the output signals from XP20D0 photomultiplier tubes(PMTs). Two PMTs were coupled with La Br3 scintillators and placed on opposite sides of a radioactive positron22 Na source for 511 ke V γ-ray tests. By analyzing the raw data acquired by the module, the best coincidence timing resolution is about 194.7 ps(FWHM), obtained by the digital constant fraction discrimination(d CFD) method,which is better than other digital methods and analysis methods based on conventional analog systems which have been tested. The results indicate that it is a promising approach to better localize the positron annihilation in positron emission tomography(PET) with time of flight(TOF), as well as for scintillation timing measurement,such as in TOF-?E and TOF-E systems for particle identification, with picosecond accuracy timing measurement.Furthermore, this module is more simple and convenient than other systems.     

Dynamic optical arbitrary waveform generation and detection in InP photonic integrated circuits for Tb/s optical communications

This article presents recent results in the development of optical arbitrary waveform generation (OAWG) technologies based on optical frequency combs and indium phosphide devices. A novel spectral-slice dynamic-OAWG approach and waveform shapers with customized spectral multiplexers and modulators, enable continuous generation of high fidelity optical waveforms accessing bandwidths in excess of 1 THz. We show results for two types integrated waveform shapers, a 100 GHz electrically controlled device with 10 channels spaced at 10 GHz and a 1 THz optically controlled device with 100 channels spaced at 10 GHz. Additionally, we include results from a 640 GHz waveform measurement device with 16 channels and 40 GHz spacing.     

Waveform timing performance of a 5 GS/s fast pulse sampling module with DRS4

We first clarify timing issues of non-uniform sampling intervals regarding a 5 GS/s fast pulse sampling module with DRS4. A calibration strategy is proposed, and as a result, the waveform timing performance is improved to below 10 ps RMS. We then further evaluate waveform-timing performance of the module by comparing with a10 GS/s oscilloscope in a setup with plastic scintillators and fast PMTs. Different waveform timing algorithms are employed for analysis, and the module shows comparable timing performance with that of the oscilloscope.     

半导体激光自混合干涉类锯齿波成立条件

本文从激光系统稳态条件出发,建立了具有普遍意义的半导体激光自混合干涉系统模型,通过仿真分析,结果表明：在较强光反馈水平时,自混合干涉信号并非都是类锯齿波形。波形形状受光反馈水平及激光器线宽展宽因数的共同制约。本文结果对激光自混合干涉技术的应用具有重要的指导意义。     

Application of a micro-Brillouin scattering technique to characterize bone in the GHz range

The evaluation of elastic properties of bone matrix has been investigated using several techniques such as nanoindentation and scanning acoustic microscopy (SAM). These techniques make use of good spatial resolution, which can prevent effects due to microstructures at the level of several hundreds of microns. In this paper, micro-Brillouin scattering (μ-BR) is introduced as another possible technique to characterize the elastic properties of bone. This technique is well known as a non-contact and non-destructive method to evaluate viscoelastic properties of transparent materials in the GHz range. Using thin, translucent bone specimens with thicknesses of around 100 μm, and the reflection induced optical geometry, ultrasonic wave velocities in the GHz range were obtained. Because this technique optically measures thermal phonons in the specimen, we can easily measure in-plane anisotropy of wave velocities by rotating the specimen. In a single trabecula, the site matched data between SAM and μ-BR showed good correlation, revealing the applicability of this technique to characterize material properties of bone. Some recent results on the anisotropy in a trabecula and the elasticity evaluation of newly and matured bones are also introduced.     

Low Pass metallic mesh interference filters for operation in the 165 GHz to 880 GHz region

Low Pass metallic mesh interference filters have been designed and constructed for operation in the region 340 m (880 GHz) to 1.8 mm (165 GHz). These filters have been shown to have excellent edge characteristics and good rejection regions. The results show that the mesh filter can be effectively used in both millimetre and submillimetre regions.Part of this work was performed while this author was at Heriot-Watt University, Edinburgh, U.K.     

Shaping the waveform of entangled photons

We demonstrate experimentally tunable control of the joint spectrum, i.e., waveform and degree of frequency correlations, of paired photons generated in spontaneous parametric down-conversion. This control is mediated by the spatial shape of the pump beam in type-I noncollinear configurations.     

微流体技术在电子芯片冷却中的应用研究进展

随着微电子技术向小型化集成化及高频高速方向发展,计算机芯片集成度的提高受到因电子元器件发热而引起的热障所限制,芯片冷却问题成为影响计算机进一步发展的关键因素之一。介绍了电子芯片发展的现状及主要冷却方法的发展,从冷却驱动器件、微通道结构各个角度论述了微流体技术在电子芯片冷却中的重要作用,重点介绍了微槽道冷却和微喷冷却的微流体技术特征,论述了压电泵、电渗、热管等微流体驱动技术在冷却液驱动的应用。     

Application of amorphous silicon field effect transistors in integrated circuits

The work described in this paper is concerned with the possible applications in integrated circuits of thin-film field effect transistors (FETs) made from glow discharge amorphous (a-) silicon and silicon nitride. The construction and performance of inverter circuits, employing integrated a-Si load resistors, are described in some detail. The extension of this basic circuit to NAND and NOR gates, to a bistable multivibrator and to a shift register is reported. Based on the excellent photoconductive properties of a-Si an integrated addressable photosensing element has been constructed, which could have potential applications in imaging arrays.     

Noiseless quantum circuits for the Peres separability criterion

In this Letter we give a method for constructing sets of simple circuits that can determine the spectrum of a partially transposed density matrix, without requiring either a tomographically complete positive-operator-valued measurement or the addition of noise to make the spectrum non-negative. These circuits depend only on the dimension of the Hilbert space and are otherwise independent of the state.     

Measurement of the group velocity of 93 GHz phonons in liquid 4He

The group velocity of 93 GHz phonons in liquid ⁴He has been measured directly at T ? 0.1 K between 0 and 24 bar. Above ～ 12 bar the group velocity falls increasingly below the ultrasonic phase velocity, and at 24 bar the dispersion is consistent with the quadratic deviation below linearity as suggested by neutron scattering.     

Pseudospark switches for the power supply circuits of pulsed lasers

A family of sealed-off low-pressure spark gap switches developed at the Institute of High Current Electronics (Tomsk) and at the Plasma Scientific Research Institute (Ryazan) with participation of researchers from the Physical Institute of the University of Erlangen (Germany) is described. The devices are of cermet construction, are capable of switching pulsed currents over wide ranges of amplitudes and durations, and have a number of unique characteristics. The principle of operation of the spark gap switches is described and their designs are given. The triggering circuits of the switches are considered. Institute of High-Current Electronics, Siberian Division of the Russian Academy of Sciences. Plazma Scientific Research Institute of Gas-Discharge Devices. Physical Institute of the University of Erlangen. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 97–105, April, 2000.     

Application of 150GHz quasi-optical EPR and endor systems to examination of materials for polarized nuclear targets

Some possibilities of mm and submm magnetic resonance spectrometers using a two-mirror open resonator as the sensor is demonstrated. A comparative analysis of sensitivity has been performed for spectrometer, with cavity and open resonators. Absorption spectra of the HMBA Cr^V complex in propylene glycol and ethylene glycol were investigated at 4.2 K.     

Polarization of microwave noise source radiation in the 30 GHz to 300 GHz range

The radiation spectra of three microwave noise sources (C. P. Clare & Co., TN type series) have been compared to determine the frequency bandwidth and their polarization. A Lamellar Grating Fourier Transform spectrometer was used with a Helium cooled bolometer detector in the wavelength region of lmm to 10mm. The spectral regions were compared with the manufacturer's specifications and the results were in partial agreement. A secondary transmission region was observed to have an input current as well as a polarization dependence despite the directional output of the waveguide antenna.     

Ultraviolet illumination thermoreflectance for the temperature mapping of integrated circuits

Noncontact optical methods such as thermoreflectance, which measure temperature-induced optical reflectivity changes, are particularly suitable for obtaining high-resolution temperature mappings on integrated circuits. Unfortunately, the coefficient linking the variations of temperature and reflectivity depends on the nature of the material and can be modified when optical interferences occur in the Si3N4-based encapsulation layers protecting the circuits. We show that taking advantage of the deep UV absorption of encapsulation layers yields temperature mapping that is independent of the underlying materials. A single calibration is therefore enough to yield the temperature on any point of the uniform and thermally thin encapsulation layer. This simplification and its potential for high resolution should make UV thermoreflectance more attractive to the semiconductor industry.