X-射线荧光光谱法测定溶样后熔融制样金属硅中铁、铝、钙、钛、磷、铜

本文提出了溶解、蒸干然后用熔剂熔融残渣的样品制备方法,解决了金属硅不易直接熔融制样的难题,可以同时测定金属硅中多种杂质元素,消除了基体效应的影响,克服了标准样品对测定的限制,测定范围广,准确度高,通过安排正交试验确定了样品制备条件。     

ICP-AES法测定金属硅中的Al、B、Ba、Ca、Cr、Cu、 Fe、Mg、Mn、Ni、Sr、Ti、V和Zn杂质元素

本文提供了一种测定金属硅中Ｂ,Ｆｅ,Ａｌ,Ｃａ,Ｍｎ等１４个杂质元素的ＩＣＰ－ＡＥＳ方法,在样品处理过程中,加入适量体积的甘露醇能够抑制Ｂ的挥发。用本方法测定了一个国家地球化学标准样（ＧＳＲ－４）,结果令人满意。     

铋磷钼蓝分光光度法测定金属硅中磷

本文建立了测定金属硅中磷的方法，检出限为0．0020％，回收率为92％－104％。     

电感耦合等离子体原子发射光谱法测定高纯铼酸铵中Ca、Cd、Mn、Fe、Mg、Al、Cu、Co、Mo、Pb、Sn和Ni

本文介绍了电感耦合等离子体发射光谱法（ICP－AES）测定高纯铼酸铵中12个杂质元素的方法。采用挥发健康基体，探讨了高铼酸铵基体的干扰及其消除办法。ICP－AES测定结果的准确度和精密度均能满足分析要求。     

X荧光能谱法测定合金结构钢标样中五个元素

本文提出Ｘ荧光能谱法测定合金结构钢中５个元素含量的方法。本方法采用能说仪中定量分析软件，选择适当工作条件，测定合金结构钢中５个元素。其准确度精确度均能满足分析要求。     

红外碳硫测定仪分析等外金属硅中碳

利用红外碳硫测定仪，探索了等外金属硅中碳金属含量的测定方法，对助溶剂的种类，用量及样品的用量等实验条件进行了优化选择，测定快速，结果准确。     

溶剂萃取石墨炉原子吸收光谱法连续测定地质样品中金、银、镓、铟

本文提出一个新的萃取反萃取体系，用石墨炉原子吸收光谱法连续测定地质样品中的Ａｎ、Ａｇ、Ｉｎ、Ｇａ四种元素，不但有效地抑制了共存元素的干扰，而且能提高测定灵敏度和精密度。文中讨论了不同石墨管对测定的影响及元素的原子化过程，较深入探讨镍对镓的基体改进作用和机理。样品分析结果与推荐值一致。     

ICP—AES法直接测定贵金属粉末中8个贵金属元素

本文应用ＩＣＰ－ＡＥＳ法直接测定贵金属粉末中８个贵金属元素，试验了试样分解方法，测定了介质的影响，元素间的光谱干扰，给了了贵金属粉末试样中８个贵金属元素的测定含量，其结果与其它方法一致性较好，结果满意。     

金属硅化物

硅与周期表上许多金属能形成金属硅化物[1-3].近十年来,由于半导体科学技术的发展和要求,对金属硅化物的研究很活跃. 微电子器件(LSI,VLSI)的基本结构中含有大量的金属化系统,例如器件和单元的互连,硅与金属的接触[肖特基势垒(SB)和欧姆接触]和栅电极.据估计,每一片256KMOS RAM就有50万个左右的金属互连.一块中规模集成电路则平均有 70个左右的 SB二极管和 400个左右的欧姆接触.这些金属化系统决定着LSI和 VLSI的成品率、可靠性和重复性. 金属硅化物中有不少基础物理问题,例如,有些金属(Pt、Pd和Au等)在室温甚至在液氮温度下形…     

明代古尸脏器中铅、汞含量的测定

本文对明代顾从礼古尸的肝、肾、肺3个脏器中铅、汞含量进行研究测定。对其中的铅、汞含量与现代尸进行比较，以求对人体中的铅，汞元素有更全面的了解，进而帮助我们对古尸中的重金属元素含量作出较合理的解释。     

The effects of chemical etching of porous silicon on Raman spectra

We have investigated the effects of chemical etching on Raman spectra of porous silicon. The as-anodized porous silicon consisted mainly of crystalline silicon, as indicated by the Raman spectra. The background in the spectrum was strong, indicating that the porous silicon surface was rough due to the presence of pores. When chemical etching was performed five times, the Raman spectrum revealed the presence of spherically shaped nanocrystalline silicon whose diameter was around 3.5 nm. Further chemical etching, however, extinguished the nanocrystallites, in addition to smoothing the surface morphology.     

黑龙江多金属矿区植物胁迫光谱及其与金属元素含量关系研究

以黑龙江多宝山和铜山矿区为例,通过采集矿区典型植物的光谱,以及岩石、土壤、植物中14种金属元素和植物叶片生化参数的测试分析,表明不同植物选择性吸收富集的金属元素不同,分别与岩石、土壤不同层中金属元素含量的相关性不同。由于植物叶片对金属元素富集,植物胁迫光谱的变异体现在光谱的‘红边’和吸收深度不同,而植物光谱的变异特征与其粗蛋白和叶绿素(a、b)含量相关,与叶绿素a的相关性更强。通过叶片内重金属元素含量和550～760nm之间波段吸收深度的多元回归分析,表明叶片中Co,Cu,Ni,Mo,Ag,Sb,W,Pb和As的含量与其光谱吸收深度的复相关系数都在0.75以上,相关性强。通过此研究,为植被覆盖区利用高光谱遥感调查评价金属元素的分布和富集奠定基础。     

Fabrication of nanostructured silicon surface using selective chemical etching

A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10^–12 M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.     

Bound electron states in the monolayer gapped graphene with the short-range impurities

Bound electron states in impure graphene with the massive Dirac spectrum are considered. Short-range perturbations for defect and impurities of the types “local chemical potential” and “local gap” are taken into account.     

化学源金属诱导多晶硅研究

以硝酸镍溶液为化学源，对于用不同方法沉积得到的非晶硅膜作晶化前驱物，都能予以不同程度的晶化.用VHF-PECVD方法获得的非晶硅膜作前驱物，易于去氢并更容易晶化.当化学源浓度不同时，晶化效果会存在一定差别，在一定的范围内，溶液浓度越高，晶化后形成的晶粒越大.退火气氛对晶化结果产生某些影响，可以发现，在N₂气氛下退火，比在大气下有更好的晶化效果.最后对物理源与化学源作诱导金属的晶化结果进行了比较，结果表明，对诱导金属源而言，化学源显示出更为有效的晶化趋势. 关键词： 金属诱导晶化 多晶硅薄膜 低温制备 退火处理     

混合光谱中已知组分光谱的自加强方法研究

通过数学变换手段将混合物光谱中某待测组分（已知纯光谱组分）所包含的信息集中于原点,使得待分析组分光谱在变换结果曲线的原点处贡献最大,称之为纯光谱组分的自加强作用;在杂质光谱所包含谱带中心位置与待分析组分纯光谱差别较大的假设基础之上,通过理论分析可认为杂质光谱在变换结果曲线原点处贡献最小,因而可选择变换结果曲线原点处的小波变换系数作为待测组分定量分析的依据,降低了分析位置选择的人为性,增强了分析手段的可靠性与适应性。模拟对比了理想曲线与含加性高斯白噪声信号的变换结果,证明该方法具有好的抗噪特性。模拟分析结果表明,该方法相比以往文献报道的单纯利用小波系数作为定量分析依据的做法在分析误差方面有很大改善。     

Comparison of different gettering techniques for Cu–p+ versus polysilicon and oxygen precipitates

We performed measurements of gettering efficiencies for Cu in silicon wafers with competing gettering sites. Epitaxial wafers (p/p+) boron-doped with a polysilicon back side allowed us to compare p+ gettering with polysilicon gettering. We further measured metal distributions in p+/p- epitaxial test wafers, with the p- substrate wafers pretreated for oxygen precipitation to compare p+ gettering with oxygen precipitate gettering. Our test started with a reproducible spin-on contamination in the 10¹² atoms/cm² range, followed by thermal treatment in order to redistribute the metallic impurity. Wafers were then analyzed by a novel wet chemical layer-by-layer etching technique in combination with inductively coupled plasma mass spectrometry. This led to “stratigraphical” concentration profiles of the impurity, with typical detection limits of 5–10×10¹² atoms/cm³. Twenty-five percent of the total Cu contamination in the p/p+/poly wafer was found in the p+ layer, whilst 75% was gettered by the polysilicon. Obviously, polysilicon exhibits a stronger gettering than p+ silicon, but due to the large distance from the front surface, polysilicon was less effective in reducing impurities from the front side of a wafer compared with p+ gettering. An epitaxial layer p+ on top of p- substrates with oxygen precipitates gettered 50% of the total Cu; while the other 50% of the Cu was measured in the p- substrate wafer with oxygen precipitates. Without oxygen precipitates, 100% of the spiked Cu contamination was detected inside the p+ layer. Gettering by oxygen precipitates thus occurs in the same temperature range as that where p+ silicon begins to getter Cu. Received: 3 September 2001 / Accepted: 17 October 2001 / Published online: 27 March 2002     

Sputtered metal-silicon thin films studied by auger electron spectroscopy

The silicon KLL Auger spectrum from a range of stainless steel-silicon thin films was studied to provide information on changes in the silicon-silicon to silicon-metal bond ratio. This work complements earlier Auger spectroscopic studies of stainless steel-carbon films. Unlike the carbon KLL spectrum, the silicon KLL spectrum contains little chemical information. Changes in the principal plasmon loss peak associated with the silicon KLL spectrum may however prove useful in identifying the silicon phases.     

Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method

Chemical mechanical polishing (CMP) technology, being the mainstream technique of acquiring global planarization and nanometer level surface, has already become an attractive research item. In the case of CMP process, the indentation depth lies in the range of nanometer or sub-nanometer, huge hydrostatic pressure induced in the local deformation area which makes the material removal and surface generation process different from traditional manufacturing process. In order to investigate the physical essence of CMP technique, the authors carry out molecular dynamics (MD) analysis of chemical mechanical polishing of a silicon wafer. The simulation result shows that huge hydrostatic pressure is induced in the local area and leads to the silicon atom transform from the classical diamond structure (α silicon) to metal structure (β silicon). This important factor results in the ductile fracture of silicon and then in the acquisition of a super-smooth surface.     

On the dynamics of electrons in an impure metal

The inelastic scattering of the electrons of an impure metal by a screened Coulomb interaction is investigated. It is found that the rate of such an inelastic scattering is increased which can be explained by a loss of momentum conservation which in turn results from loss of translational symmetry introduced by the defects of an impure metal. Eventually, a linearised Boltzmann equation is derived for time and space dependent perturbances of the electronic distribution function. The collision integral takes into account impurity scattering as well as electron-electron and electron-phonon scattering. In an impure metal the terms corresponding to the last two processes are modified as discussed above and in a previous paper on the electron-phonon interaction.