Preparation of thick,crack-free germanosilicate glass films by polyvinylpyrrolidone and study of the UV-bleachable absorption band

With addition of polyvinylpyrrolidone (PVP) transparent, stable GeO₂–SiO₂ sols containing up to 60–80 mol% GeO₂ were synthesized using tetraethyl orthogermanate (TEOG) and tetraethylorthosilicate (TEOS) as precursors for germania and silica, respectively. It was shown by TEM analyses that the PVP can be absorbed onto the colloidal particles providing steric hindrance for the combination and aggregation of particles. These sols were observed showing rapid increase in viscosity within both the early period and the end period of sol aging time, but exhibiting a viscosity value of about 28 mPa s within the rest aging time (45–90 h) satisfying well the requirements for the deposition of thick films by cycles of dip-coating operation. It was determined by TG-DTA and SEM analyses that the densification of GeO₂–SiO₂ gel material with PVP was much more retarded than the gel without PVP resulting in crack-free germansilicate films with a thickness of 3 μm. The crystallization behavior of germansilicate films was enhanced with the increase of GeO₂ content but glass films with a composition of 60GeO₂ · 40SiO₂ was obtained by sintered at 700 °C for 1 h and annealed at 550 °C under a flowing H₂/N₂ atmosphere for 2 h. FT-IR analyse showed that the heat treatment at 700 °C for 60 min was effective to remove the organics and hydroxyl groups in the germansilicate film. An intense 5 eV absorption band was distinctly observed in films. The intensity of this absorption band was found to be effectively bleached by UV illumination. Weak photoluminescence emission bands which originated from the neutral oxygen di-vacancy (NODV) were detected near 375 and 276 nm. Therefore, the 5 eV absorption band observed in this work was mainly caused by the neutral oxygen monovacancy (NOMV). A saturated absorptivity change of the UV-bleachable band after prolonged illumination was found to be 256 cm⁻¹ for the 60GeO₂ · 40SiO₂ films implying the NOMV concentration in the films reached about 3.8 × 10¹⁸ cm⁻³.     

Silica xerogel films hybridized with carbon nanotubes by single step sol–gel processing

Synthesis of multi-walled carbon nanotubes (MWCNTs) doped silica xerogel films was reported in this work. A crucial step of introducing MWCNTs was achieved by functionalizing them by acid treatment to form stable and homogenous SiO₂/MWCNTs sol. Scanning electron microscopy showed spherical particles in honeycomb network structure for undoped xerogel films whereas dispersion and wrapping of MWCNTs in silica matrix was observed for MWCNTs doped films. Various bond formations during the sol–gel process and surface modification were confirmed using Fourier transform infra-red and detailed study on the chemical bonding state of the films was carried out using X-ray photoelectron spectroscopy. Nanoindentation studies showed that the mechanical properties of MWCNTs doped xerogel film increase dramatically: higher modulus (E = 2.127 ± 0.095 GPa) and hardness (H = 0.035 ± 0.017 GPa) values than those of pristine xerogel film (E = 0.234 ± 0.058 GPa, H = 0.01 ± 0.003 GPa).     

Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target

Amorphous tungsten-doped In₂O₃ (IWO) films were deposited from a metallic target by dc magnetron sputtering at room temperature. Both oxygen partial pressure and sputtering power have significant effects on the electrical and optical properties of the films. The as-deposited IWO films with the optimum resistivity of 5.8 × 10^?4 Ω·cm and the average optical transmittance of 92.3% from 400 to 700 nm were obtained at a W content of 1 wt%. The average transmittance in the near infrared region (700–2500 nm) is 84.6–92.8% for amorphous IWO prepared under varied oxygen partial pressure. The mobility of the IWO films reaches its highest value of 30.3 cm² V^?1 s^?1 with the carrier concentration of 1.6 × 10²⁰ cm^?3, confirming their potential application as transparent conductive oxide films in various flexible devices.     

Sol–gel derived highly transparent and conducting yttrium doped ZnO films

This paper reports the structural, electrical and optical properties of Yttrium doped zinc oxide (YZO) thin films deposited on Corning (7059) glass substrates by spin coating technique. A precursor solution of ZnO, 0.2 M in concentration was prepared from zinc acetate dissolved in anhydrous ethanol with diethanolamine as a sol gel stabilizer. Yttrium nitrate hexahydrate (Y₂NO₃ · 6H₂O) was used as the dopant (3 wt%) in the present study. The films of different thickness in the range (200–500 nm) were prepared. The films were annealed in air at 450 °C for 1 h. It was observed that the c-axis orientation improves and the grain size increases as is indicated by an increase in intensity of the (0 0 2) peak and the decrease in the FWHM with the increase of film thickness. The resistivity decreased sharply from 2.8 × 10⁻² to 5.8 × 10⁻³ Ω-cm as the thickness increased from 200 to 500 nm. However, the average transmittance decreased from 87% to 82.6% as the film thickness increased to 500 nm. The lowest sheet resistance of ∼120 Ω/□ was obtained for the 500 nm thick film.     

Micro-Raman monitoring of solvent-free TEOS hydrolysis

The ethanol-free hydrolysis of tetraethyl-orthosilicate (TEOS) at normalities N = 0.1 and N = 0.01 of HBr, HCl, HNO₃ and H₂SO₄ has been studied, during the first stages of the process by in situ micro-Raman spectroscopy, following the intensities of TEOS and ethanol characteristic vibrational features. The time required for a complete vanishing of the 656 cm⁻¹ Raman peak of TEOS increases with decreasing strength of the acid catalyst for N = 0.1, whereas, at lower acid concentrations, longer hydrolysis times are needed, irrespective of catalyst type.     

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi₂O₃–SiO₂ and Bi₂O₃–TiO₂ systems was investigated. Control of the stoichiometry of Bi–Si–O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO₂- and YSZ-buffered Si(1 0 0). The Bi–Ti–O thin films were deposited on Si(1 0 0) substrate. Both Bi–Si–O and Bi–Ti–O thin films were amorphous after deposition. Highly a-axis oriented Bi₂SiO₅ thin films were obtained when the Bi–Si–O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi–Ti–O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined.     

Estimating accuracy of 17O NMR measurements in oxide glasses: Constraints and evidence from crystalline and glassy calcium and barium silicates

The use of ¹⁷O nuclear magnetic resonance (NMR) spectroscopy to measure site populations in silicate and aluminosilicate glasses has provided insights and challenges to conventional models of glass structure. In order to better understand the level of accuracy and precision achievable, we have synthesized crystalline barium metasilicate (BaSiO₃), barium orthosilicate (Ba₂SiO₄), tricalcium silicate (Ca₃SiO₅), a barium silicate glass ((BaO)_0.45(SiO₂)_0.55), and a calcium silicate glass ((CaO)_0.56(SiO₂)_0.44), and report ¹⁷O NMR spectra for all of these. After correcting the observed intensities for quadrupolar effects, we measure an NBO content of 66.7% ± 0.6% for the BaSiO₃, compared to the known value of 66.7%. Applying the same techniques for the glasses gives an NBO content of 58.8% ± 0.8% (vs. the expected 55.5% ± 1.4% from stoichiometry) for the barium silicate and 76.9% ± 1.2% (vs. 78.6% ± 1.4%) for the calcium silicate. Within our uncertainties, we find no evidence for deviation from conventional models of glass structure for the glasses studied here. We also see no NMR signal (detection limit of about 0.5%) at the expected position for “free” oxide ions (bonded only to Ca^2 +), as newly constrained by our data for crystalline Ca₃SiO₅, which contains this species.     

Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

This work describes the preparation of HfO₂ thin films by the sol–gel method, starting with different precursors such as hafnium ethoxide, hafnium 2,4-pentadionate and hafnium chloride. From the solution prepared as mentioned above, thin films on silicon wafer substrates have been realized by ‘dip-coating’ with a pulling out speed of 5 cm min^?1. The films densification was achieved by thermal treatment for 10 min at 100 °C and 30 min at 450 °C or 600 °C, with a heating rate of 1 °C min^?1. The structural and optical properties of the films are determined employing spectroellipsometric (SE) measurements in the visible range (0.4–0.7 μm), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The main objective of this paper was to establish a correlation between the method of preparation (precursor, annealing temperature) and the properties of the obtained films. The samples prepared from pentadionate and ethoxide precursors are homogenous and uniform in thickness. The samples prepared starting from chloride precursor are thicker and proved to be less uniform in thickness. Higher non-uniformity develops in multi-deposition films or in crystallized films. A nano-porosity is present in the quasi-amorphous films as well in the crystallized one. For the samples deposited on silicon wafer, the thermal treatment induced the formation of a SiO₂ layer at the coating–substrate interface.     

Structural investigations of nitrided Nb2O5 and Nb2O5–SiO2 sol–gel derived films

Sol–gel derived xNb₂O₅–(100 ? x)SiO₂ films (where x = 100, 80, 60, 50, 40, 20, 0 mol%) were nitrided at various temperatures (800 °C, 900 °C, 1000 °C, 1100 °C and 1200 °C). The structural transformations occurring in the films as a result of ammonolysis were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XRD results have shown that the temperatures below 1100 °C were too low to obtain a pure NbN phase in the samples. The AFM observations indicate that the formation of the NbN phase and the size of NbN grains are related to the silica content in the layer. NbN grains become more regular and larger as the niobium content increases. The maximum grain size of about 100 nm was observed for x = 100. Preparation of the Nb₂O₅–SiO₂ sol–gel derived layers and the subsequent nitridation is a promising method of inducing crystalline NbN in amorphous matrices. It follows from the XPS results that a small amount of Nb₂O₅ remains in the films after nitridation at 1200 °C and that nitrogen reacted not only with Nb₂O₅ but also with SiO₂.     

Kinetics of crystallization process of Mg–Cu–Gd based bulk metallic glasses

The crystallization behavior of Mg₆₁Cu₂₈Gd₁₁ and (Mg₆₁Cu₂₈Gd₁₁)₉₈Cd₂ bulk metallic glasses was studied using DSC in the mode of continuous and isothermal heating, and its crystallization process and microstructure were confirmed by XRD and TEM. In continuous heating, the activation energies of glass transition, onset and peak crystallization were determined by the Kissinger method, which yields 110 ± 12, 77 ± 9 and 79 ± 10 kJ/mol, respectively, for Mg₆₁Cu₂₈Gd₁₁ glassy alloy, and 144 ± 10, 126 ± 6 and 131 ± 5 kJ/mol, respectively, for (Mg₆₁Cu₂₈Gd₁₁)₉₈Cd₂ glassy alloy. The isothermal kinetics was modeled by the Johnson-Mehl-Avrami equation. The Avrami exponent of the base alloy was in the range from 1.98 to 2.56 (± 0.01), which indicated a decreasing nucleation rate and a diffusion-controlled growth. For Cd-added glassy alloy, the Avrami exponent was in the range from 3.26 to 4.08, which indicated an increasing nucleation rate. The activation energies in isothermal process were calculated to be 88 ± 2 and 132 ± 2 kJ/mol, respectively, for the base and Cd-added glassy alloys. It was found that Mg₂Cu phase was the primary phase in the initial crystallization and the strong affinity between Cd and Mg/Gd tended to impose resistance to the formation of Mg₂Cu phase and thus improves the thermal stability.     

Effect of TiO2 addition on the chemical durability of Bi2O3–SiO2–ZnO–B2O3 glass system

The effect of the substitution of ZnO for TiO₂ on the chemical durability of Bi₂O₃–SiO₂–ZnO–B₂O₃ glass coatings in hot acidic medium (0.1 N H₂SO₄ at 80 °C) for different times was studied. The thick films produced by a screen-printing method and heat treated at 700 °C/5 min were analyzed by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. The glass from the Bi₂O₃–SiO₂–ZnO–B₂O₃ system developed Zn₂SiO₄ and a glassy phase that were readily attacked by hot 0.1 N sulfuric acid, whereas the heat treated coating from the Bi₂O₃–SiO₂–TiO₂–ZnO–B₂O₃ system presented a finer microstructure with thin interconnected Bi₄Ti₃O₁₂ crystals and a glassy phase more resistant to hot 0.1 N sulfuric acid attack etching.     

Properties and structure of (1 − x)Li2O–xNa2O–Al2O3–4SiO2 glass systems

(1 − x)Li₂O–xNa₂O–Al₂O₃–4SiO₂ glasses were studied for the progressive percentage substitution of Na₂O for Li₂O at the constant mole of Al₂O₃ and SiO₂. The crystallization temperature at the exothermic peak increased from 898 to 939 °C when the Na₂O content increases from 0 to 0.6 mol. The coefficient of thermal expansion and density of these as-quenched glasses increase from 6.54 × 10⁻⁶ °C⁻¹ to 10.1 × 10⁻⁶ °C⁻¹ and 2.378 g cm⁻³ to 2.533 g cm⁻³ when the Na₂O content increases from 0 to 0.4 mol, respectively. The electrical resistivity has a maximum value at Na₂O · (Li₂O + Na₂O)⁻¹ = 0.4. The activation energy of crystallization decreases from 444 to 284 kJ mol⁻¹ when the Na₂O content increased from 0 to 0.4 mol. Moreover, the activation energy increases from 284 kJ mol⁻¹ to 446 kJ mol⁻¹ when the Na₂O content increased from 0.4 to 0.6 mol. The FT-IR spectra show that the symmetric stretching mode of the SiO₄ tetrahedra (1035–1054 cm⁻¹) and AlO₄ octahedra (713–763 cm⁻¹) exhibiting that the network structure is built by SiO₄ tetrahedra and AlO₄.     

Surface morphology of spin-coated As–S–Se chalcogenide thin films

Surface morphology and roughness of amorphous spin-coated As–S–Se chalcogenide thin films were determined using atomic force microscopy. Prepared films were coated from butylamine solutions with thicknesses d ∼ 100 nm and then annealed in a vacuum furnace at 45 °C and 90 °C for 1 h for their stabilization. The root mean square surface roughness analysis of surfaces of as-deposited spin-coated As–S–Se films indicated a very smooth film surface (with R_q values 0.42–0.45 ± 0.2 nm depending on composition). The nanoscale images of as-deposited films confirmed that surface of the films is created by domains with dimensions 20–40 nm, which corresponds to diameters of clusters found in solutions. The domain character of film surfaces gradually disappeared with increasing annealing temperature while the solvent was removed from the films. Middle-infrared transmission spectra recorded a decrease of intensities of vibration bands connected to N–H (at 3367 and 3292 cm⁻¹) and C–H (at 2965, 2935 and 2880 cm⁻¹) stretching vibrations. Temperature regions of solvent evaporation T = 60–90 °C and glass transformation temperatures T_g = 135–150 °C of spin-coated As–S–Se thin films were determined using a modulated differential scanning calorimetry.     

Influence of oxygen partial pressure on the properties of undoped InOx films deposited at room temperature by rf-PERTE

Transparent and conductive/semiconductive undoped indium oxide (InO_x) thin films were deposited at room temperature. The deposition technique used is the radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium (In) in the presence of oxygen. The influence of oxygen partial pressure on the properties of these films is presented. The oxygen partial pressure varied between 3 × 10^?2 and 1.3 × 10^?1 Pa. Undoped InO_x films, 100 nm thick, deposited at the oxygen partial pressure of 6 × 10^?2 Pa show a conductive behaviour, exhibit an average visible transmittance of 81%, a band gap around 2.7 eV and an electrical conductivity of about 1100 (Ω cm)^?1. For oxygen pressures greater than 6 × 10^?2 Pa, semiconductive films are obtained, maintaining the visible transmittance. Films deposited at lower pressures are conductive but dark. From XPS data, films deposited at an oxygen partial pressure of 6 × 10^?2 Pa show the highest amount of oxygen in the film surface and the lowest ratio between oxygen in the oxide crystalline and amorphous phases.     

Characterization of thermo-optical and mechanical properties of calcium aluminosilicate glasses

In this work several different compositions of CaO:Al₂O₃:SiO₂ were prepared under vacuum atmosphere to study the glass forming ability of this system as a function of the SiO₂ content. Samples containing 25–45 wt% of Al₂O₃, 31–44 wt% of CaO, 14–39 wt% of SiO₂ and 4.1 wt% of MgO were prepared in graphite crucibles, for approximately 2 h at ∼ 1600 °C. The influence of silica content is discussed in terms of the mechanical properties, glass transition temperature, crystallization temperature, transmittance spectrum, refractive index, mass density, specific heat, thermal diffusivity, thermal conductivity and the temperature coefficient of optical path length change. The results reinforce the idea that these glasses are strong materials, having useful working-temperature range, good combination of thermal, mechanical and optical properties that could be exploited in many optical applications, in particular, as glass laser materials.     

GeO2 based high k dielectric material synthesized by sol–gel process

Recently, there has been lot of research on new high dielectric constant (high k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high k materials, such as high dielectric constant, thermal stability (400 °C or higher), high mechanical strength, and good adhesion to neighboring layers. Keeping in view the properties required for the replacement of existing SiO₂ dielectrics, new high k dielectric material based on GeO₂ has been synthesized. Polycrystalline GeO₂ thin films have been deposited by simple, and cost effective sol–gel spin coating process. The obtained xerogel films of germanium oxide have been annealed at 400 °C, 600 °C and 800 °C for 3 h in argon atmosphere. Elemental composition, morphology, and phase analysis have been measured by employing X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction techniques, respectively. The formation of the hexagonal GeO₂ phase at and above 400 °C has been reported. The composition of the annealed films have been measured and found to be 68 at.% of O, 32 at.% of Ge for GeO₂, which are close to the stoichiometry of the GeO₂.     

Electrochromic properties of nickel oxide and mixed Co/Ni oxide films prepared via sol–gel route

The Ni oxide and mixed Co/Ni oxide films were prepared by sol–gel dip coating method at optimum conditions. The XRD analysis reveals the pure and Co mixed nickel oxide films to be in amorphous state. The field emission SEM images reveal nanopore like structure for Ni oxide film and well defined grains with pores for Ni oxide films containing 5 wt.% of Co. Electrochromic properties have been studied using cyclic voltammetric (CV) and in situ spectro-electrochemical techniques. The pure and cobalt mixed (5 wt.%) Ni oxide films exhibit anodic/cathodic diffusion coefficient of 4.93 ± 0.14/3.74 ± 0.10 × 10^?10 cm²/s and 10.00 ± 0.24/7.60 ± 0.20 × 10^?10 cm²/s respectively after 300 cycles. The cobalt mixed (5 wt.%) Ni oxide films exhibit the bleached/coloured state transmission of 90.42/7.21% with a photopic constrast ratio of 12.54 and the colouration and bleaching time were 5.9 and 2.4 s respectively. The addition of cobalt beyond 5% leads to poor transparency and inhibited electrochromic switching character.     

Crystallization of amorphous Al2O3–SiO2 precursors doped with nickel

The crystallization of amorphous diphasic Al₂O₃–SiO₂ precursors doped with nickel has been studied by differential scanning calorimetry (DSC), XRD diffraction (XRD) and scanning and transmission electron microscopy (SEM, TEM) equipped with energy dispersive X-ray spectroscopy (EDS). Diphasic gels with constant atomic ratio (Al + Ni)/Si = 3:1, where 0, 1, 2 and 3 at.% of aluminum were replaced by nickel, have been prepared by hydrolyzing of TEOS in aqueous solution of aluminum nitrate. Crystallization of Ni-containing γ-Al₂O₃ preceded the crystallization of Al–Si spinel. Activation energy of 603 ± 16 kJ mol⁻¹ for crystallization of Ni-containing γ-Al₂O₃ was obtained in non-isothermal conditions. Ni-incorporated γ-Al₂O₃ transforms gradually with the temperature increase into Ni aluminate spinel, while Al–Si spinel reacts with amorphous silica forming mullite at about 1200 °C. Rietveld structure refinement of phases present in the samples annealed at 1600 °C and SEM-EDS and TEM-EDS analyses of related phases have shown that nickel predominantly crystallizes as NiAl₂O₄, but small amount of nickel is incorporated in mullite structure, as well as, dissolved in the glassy phase of the system.     

Cation diffusion in soda-lime-silicate glass melts

Cation diffusion was experimentally investigated in soda-lime-silicate glass melts (composition in mol%: 74SiO₂–16Na₂O–10CaO) at temperatures from 1000 to 1200 °C using the diffusion couple technique. One half of each diffusion couple was doped with 11 trace elements (500 ppm by weight of Rb, Cs, Sr, Zn, Cd, Nd, Eu, In, Sn, Ge and 1000 ppm by weight of Fe). Experiments were performed in an internally heated gas pressure vessel at a confining pressure of 100 MPa to avoid convective fluxes in the diffusion samples. The distribution of major elements was analyzed by electron microprobe. IR spectroscopy was used to quantify concentrations of dissolved water in the run products. Trace element diffusion profiles were measured simultaneously employing synchrotron X-ray fluorescence microanalysis. In all analyzed glasses the highest diffusion coefficients were observed for Rb whereas Nd was always the slowest element, e.g. at 1000 °C the diffusivity decreases from (1.51 ± 0.35) × 10⁻¹¹ m²/s for Rb to (1.29 ± 0.34) × 10⁻¹³ m²/s for Nd. The diffusivity of Nd is close to the chemical diffusivity of network former calculated from viscosity data using the Eyring relationship. Surprisingly, the rare earth elements Nd (3+) and Eu (mixed 2+, 3+) diffuse more slowly than the tetravalent Ge. Activation energies for diffusion increase from (132.1 ± 1.5) kJ/mol for Rb to (205 ± 16) kJ/mol for Eu. Based on the diffusion data for Eu, Sr and Nd we estimated that Eu²⁺/Eu_total ratios in soda-lime-silicate glass melts are below 0.04 both at reducing and oxidizing conditions.     

Superconducting properties of an NbN–SiO2 disordered system obtained by ammonolysis of NbN–SiO2 sol–gel derived coatings

Studies in superconducting properties of NbN–SiO₂ films are reported. The films were obtained through nitridation of sol–gel derived Nb₂O₅–SiO₂ coatings at 1200 °C, a process leading to the formation of disordered structures with NbN metallic grains dispersed in the insulating SiO₂ matrix. Electrical resistivity was measured with the conventional four-terminal method in the temperature range from 5 to 280 K. The samples’ superconducting properties, examined with magnetically modulated microwave absorption (MMMA), depend on the NbN/SiO₂ molar ratio and the film’s thickness.