Growth of CdSiP2 single crystals by self-seeding vertical Bridgman method

Using a high purity CdSiP₂ polycrystalline charge synthesized in a single-temperature zone furnace, a CdSiP₂ single crystal with dimensions of 8 mm in diameter and 40 mm in length was successfully grown by the vertical Bridgman method. The quality of the crystal was characterized by high resolution X-ray diffraction and the full width at half maximum (FWHM) of the rocking curve for the (200) face is 33″. Thermal property measurements show that: the mean specific heat of CdSiP₂ between 300 and 773 K is 0.476 J g^?1 K^?1; the thermal conductivity of the crystal along the a- and c-axes is 13.6 W m^?1 K^?1 and 13.7 W m^?1 K^?1 at 295 K, respectively; and the thermal expansion coefficient measured along the a- and c-axes is 8.4×10^?6 K^?1 and ?2.4×10^?6 K^?1, respectively. The optical transparency range of the crystal is 578–10,000 nm, and there is no absorption loss in the spectrum from 0.7 to 2.5 μm, as often exists with ZnGeP₂ crystals grown from the melt.     

Single crystal growth and physical properties of superconducting ferro-pnictides Ba(Fe,Co)2As2 grown using self-flux and Bridgman techniques

We have employed the high temperature solutions growth technique and the Bridgman technique to grow cm-size high-quality single crystals of pristine BaFe₂As₂ (Ba122) and its Co-doped superconducting variants. In the first approach, self-flux (Fe, Co)As was used to achieve a homogeneous melt of composition Ba(Fe, Co)_3.1As_3.1 at T=1463 K. The melt was then cooled slowly under a temperature gradient in a double-wall crucible assembly to obtain large and flux-free single crystals of Ba(Fe, Co)₂As₂. In the second approach, single crystals were grown directly from a stoichiometric Ba(Fe, Co)₂As₂ melt at T=1723 K employing the Bridgman technique associated with a vertical tube furnace. Using both techniques single crystals with lateral dimensions up to 25×10 mm² and thickness up to 1 mm were obtained. Details of the two methods are given and a comparative study of the magnetic and transport properties of the single crystals obtained using the two methods is presented.     

Vertical Bridgman growth and characterization of large ZnGeP2 single crystals

The growth of ZnGeP₂ crystals by seeded Vertical Bridgman method was studied. High-quality near-stoichiometric ZnGeP₂ single crystals obtained were of 20–30 mm in diameter and 90–120 mm in length. By selection of the seed crystallographic orientation the single crystal ingots without cracks and twins were grown, as shown by X-ray diffraction. The infrared transmission property of the ZnGeP₂ crystals was studied by the calculated optical absorption coefficient spectra. The results showed that after thermal annealing of the crystals the optical absorption coefficient was ～0.10 cm^?1 at 2.05 μm, and ～0.01 cm^?1 at 3–8 μm. The rocking curves patterns of the (4 0 0) reflection demonstrated that the as-grown single crystals possessed a good structural quality. The composition of the crystals was close to the ideal stoichiometry ratio of 1:1:2. The low-loss typical ZnGeP₂ samples of 6 mm×6 mm×15 mm in sizes were cut from the annealed ingots for optical parametric oscillation experiments. The output power of 3.2 W was obtained at 3–5 μm when the incident pumping power of 2.05 μm laser was 9.4 W, and the corresponding slope efficiency and the conversion efficiency were 44% and 34%, respectively.     

Growth improvement and quality evaluation of ZnGeP2 single crystals using vertical Bridgman method

ZnGeP₂ single crystals were grown using two-temperature zone vertical Bridgman method. The effect of crucible material, crucible shape, and cooling program on the growth of the ZnGeP₂ crystal was investigated. The qualities of the crystals were evaluated by high resolution X-ray diffraction, X-ray fluorescence spectrometry, and IR transmittance spectra. The results show that the full width at half maximum of the rocking curves for (200), (004), and (220) faces are 45″, 37″, and 54″, respectively. The concentration of the P, Zn and Ge are almost homogeneous along the growth axis, but P and Zn are slightly deficient compared with Ge in the as-grown ZnGeP₂ crystals. The increase of annealing temperature from 600 °C to 700 °C has little effect on the reduction of the absorption losses in ZnGeP₂ powders, and has negative effect on the reduction of the absorption losses in ZnP₂ powders. Annealed in ZnP₂ powders at 600 °C for 300 h, the optical absorption loss at 2.05 μm reduce by 37%, compared with that of 27% reduction annealed in ZnGeP₂ powders.     

Investigation of directional solidified Al–Ti alloy

Al–1 wt% Ti alloy was directionally solidified upwards under argon atmosphere under the two conditions; with different temperature gradients (G = 2.20–5.82 K/mm) at a constant growth rate (V = 8.30 μm/s) and with different growth rates (V = 8.30–498.60 μm/s) at a constant temperature gradient (G = 5.82 K/mm) in a Bridgman furnace. The dependence of characteristic microstructure parameters such as primary dendrite arm spacing (λ₁), secondary dendrite arm spacing (λ₂), dendrite tip radius (R) and mushy zone depth (d) on the velocity of crystal growth and the temperature gradient were determined by using a linear regression analysis. A detailed analysis of microstructure development with models of dendritic solidification and with previous similar experimental works on dendritic growth for binary alloys were also made.     

Growth of PBI2 single crystals from stoichiometric and Pb excess melts

We have successfully grown high-purity and -quality PbI₂ single crystals by the vertical Bridgman method. The rocking curves of four-crystal X-ray diffraction (XRD) show 120 arcsec in full-width at half-maximum (FWHM). The photoluminescence (PL) spectra at 7.8 K show the resolved intensive exciton emission line and the weak DAP emission band. The deep-level emissions are not observed. The measurement of the electrical and radiographic properties show that Leadiodide (PbI₂) single crystal has a resistivity of 5×10¹⁰ Ω cm and imager lag is 8 s, respectively. In order to improve the controllability of crystal growth, PbI₂ single crystals were also grown from a lead (Pb) excess PbI₂ source. The experimental results show very good reproducibility. In addition, the growth models of crystal are proposed, and the growth mechanism is discussed.     

Growth of YFeO3 crystal by edge-defined film-fed growth method

A sizeable single crystal of YFeO₃ (YIP) with the dimensions of 19×15×15 mm³ has been successfully grown by the edge-defined film-fed growth method. Thermal magnetic analysis shows that Curie temperature of as-grown YIP crystal is about 363.5 °C. The hardness of YIP crystal was measured as 900 VDH, equivalent to about 7.1 moh. Moreover, the optical transmittance of as-grown YIP crystal can be significantly enhanced if this crystal was annealed at 700 °C in oxygen atmosphere.     

Growth and characterization of lead-free Ba(1−x)CaxTi(1−y)ZryO3 single crystal

A lead-free Ba_(1?x)Ca_xTi_(1?y)Zr_yO₃ (BCZT) single crystal (x=0.08, y=0.26) was grown by the Czochralski (CZ) method in a mixed flux of TiO₂ and ZrO₂. The composition of as-grown BCZT was analyzed by electron probe micro-analysis. The structure, dielectric properties and phase transition were investigated at different temperatures. The X-ray diffraction results confirmed that the structure of the as-grown BCZT crystal was cubic both at 25 °C and 500 °C. The temperature dependence of the dielectric constant and Raman spectra characterization revealed that there was a phase transition from cubic to tetragonal, which happened between 200 K and 250 K. With increasing frequency, the Curie temperature shifted towards high temperature.     

Growth and characterization of the chalcopyrite LiGaTe2: A highly non-linear birefringent optical crystal for the mid-infrared

LiGaTe₂ crystals have been grown by the Bridgman–Stockbarger technique. The clear transparency range of LiGaTe₂ extends from 2.5 to 12 μm and its band-gap at room temperature is at 2.41 eV (515 nm). LiGaTe₂ is a positive uniaxial crystal which possesses sufficient birefringence for phase-matching. Its non-linear coefficient d₃₆ estimated by phase-matched second harmonic generation is 43 pm/V ± 10% at 4.5 μm. The properties of LiGaTe₂ are compared to those of other mid-IR chalcopyrite non-linear optical crystals with special emphasis on the frequency doubling potential for CO₂ lasers operating at 10.6 μm.     

Growth improvement and characterization of AgGaxIn1−xSe2 chalcopyrite crystals using the horizontal Bridgman technique

AgGa_xIn_1?xSe₂ single crystals with x=0.4 have been grown by the horizontal Bridgman technique for nonlinear optical application requires phase matching. High purity polycrystalline synthesis of AgGa_xIn_1?xSe₂ was carried out at 850 °C, which is a relatively lower temperature compared to those in earlier reports, thus reducing secondary phase formation. An average Ga:In ratio of 62:38 (±3%) was measured using energy dispersive spectroscopy (EDS). As grown, a single crystal shows very high IR transmission of ～65% in the spectral range of 4000–600 cm^?1. There was no significant change in its IR transmission after annealing it at 500 °C for 20 days in vacuum in the presence of AgGa_xIn_1?xSe₂ powder. This indicates a low concentration of defects in the crystal. The results demonstrate that the improved new synthesis method for crystal growth was promising and that the quality of the crystal was good.     

Growth and thermodynamic characterization of pure and Er-doped KPb2Cl5

Centimeter-sized single crystals of pure and Er-doped KPb₂Cl₅ were successfully grown by the Bridgman–Stockbarger method using silica ampoules sealed under HCl gas. The phase transition that occurs at 255 °C (528.15 K) was characterized by differential scanning calorimetry and found not to entail mechanical breakdown of the crystals. The KPb₂Cl₅ volumic mass and specific heat functions were measured from ∼700 to 760 K and ∼120 to 760 K, respectively. An updated Ellingham diagram for chlorides aimed at choosing the crucible material, synthesis and crystal growth atmosphere, and starting products is proposed.     

Growth and scintillation properties of the Eu2W3O12 crystal

The growth and scintillation properties of the Eu₂W₃O₁₂ crystal are reported. The Eu₂W₃O₁₂ single crystal has been grown by the Bridgman method. And the colored Eu₂W₃O₁₂ single crystal has been achieved. The Ultraviolet fluorescence spectra and the X-ray excited luminescence spectra show that the Eu₂W₃O₁₂ crystal has emission at the 590 nm and 612 nm. The fluorescence decay time of the Eu₂W₃O₁₂ crystal is about 520 μs. The luminosity of the Eu₂W₃O₁₂ single crystal under X-ray excitation is about 8% of the luminosity of the BGO single crystal. Those results show that the Eu₂W₃O₁₂ crystal has potential application as the X-ray intensifier.     

The preferential orientation of the directionally solidified Si–TaSi2 eutectic in situ composite

The Si–TaSi₂ eutectic in situ composite is a favorable field emission material due to relatively low work function, good electron conductivity, and three-dimensional array of Schottky junctions grown in the composite spontaneously. The preferential orientation during directional solidification is determined by the growth anisotropy. In order to obtain the preferential direction of the steady-state crystal growth, the transmission electron microscopy (TEM) is used for analysis. It is found that the preferential orientation of the Si-TaSi₂ eutectic in situ composite prepared by Czochralski (CZ) technique is [3 3¯ 2¯] Si∥[0 0 0 1] TaSi₂, (2 2 0)Si∥(2 2¯ 0 0) TaSi₂. Whereas the preferential orientation of the Si–TaSi₂ eutectic in situ composite prepared by electron beam floating zone melting (EBFZM) technique is [0 1¯ 1¯ ]] Si∥[0 0 0 1] TaSi₂,(0 1¯ 1) Si∥(0 1¯ 1 1)TaSi₂. The preferential directions of the Si-TaSi₂ eutectic in situ composites prepared by two kinds of crystal growth techniques are distinctly different from each other, which results from different solid–liquid interface temperatures on account of the different crystal growth conditions, e.g. different solidification rate, different temperature gradient, different solid–liquid interface curvature and different kinetic undercooling.     

Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering

Undoped and 5%(Mn, In)-doped SnO₂ thin films were deposited on Si(1 0 0) and Al₂O₃ (R-cut) by RF magnetron sputtering at different deposition power, sputtering gas mixture and substrate temperature. X-ray reflectivity was used to determine the films thickness (10–130 nm) and roughness (～1 nm). The combination of X-ray diffraction and Mössbauer techniques evidenced the presence of Sn⁴⁺ in an amorphous environment, for as-grown films obtained at low power and temperature, and the formation of crystalline SnO₂ for annealed films. As the deposition power, substrate temperature or O₂ proportion are increased, SnO₂ nanocrystals are formed. Epitaxial SnO₂ films are obtained on Al₂O₃ at 550 °C. The amorphous films are quite uniform but a more columnar growth is detected for increasing deposition power. No secondary phases or segregation of dopants were detected.     

N-type doping of GaN/Si(1 1 1) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice

The characteristics of Si-doped and undoped GaN/Si(1 1 1) heteroepitaxy with composite buffer layer (CBL) and superlattice are compared and discussed. While as-grown Si-doped GaN/Si(1 1 1) heteroepitaxy shows lower quality compared to undoped GaN, crack-free n-type and undoped GaN with the thickness of 1200 nm were obtained by metalorganic chemical vapor deposition (MOCVD). In order to achieve the crack-free GaN on Si(1 1 1), we have introduced the scheme of multiple buffer layers; composite buffer layer of Al_0.2Ga_0.8N/AlN and superlattice of Al_0.2Ga_0.8N/GaN on 2-in. Si(1 1 1) substrate, simultaneously. The FWHM values of the double-crystal X-ray diffractometry (DCXRD) rocking curves were 823 arcsec and 745 arcsec for n-GaN and undoped GaN/Si(1 1 1) heteroepitaxy, respectively. The average dislocation density on GaN surface was measured as 3.85×10⁹ and 1.32×10⁹ cm⁻² for n-GaN and undoped GaN epitaxy by 2-D images of atomic force microscopy (AFM). Point analysis of photoluminescence (PL) spectra was performed for evaluating the optical properties of the GaN epitaxy. We also implemented PL mapping, which showed the distribution of edge emission peaks onto the 2 inch whole Si(1 1 1) wafers. The average FWHMs of the band edge emission peak was 367.1 and 367.0 nm related with 3.377 and 3.378 eV, respectively, using 325 nm He-Cd laser as an excitation source under room temperature.     

Lower dimer impurity incorporation may result in higher perfection of HEWL crystals grown in microgravity: A case study

Crystals of tetragonal hen egg white lysozyme (HEWL) grown on a series of space missions and their terrestrial counterparts were analyzed by gel electrophoresis and X-ray diffraction. The crystals were produced by vapor-diffusion and dialysis methods. The microgravity and terrestrial grown HEWL crystals were found to have effective partitioning coefficients (K_eff) for an oxidatively formed covalent dimer impurity (MW 28 K) of 2 and 9, respectively, i.e. the latter contain 4.5 times more dimers. The microgravity grown crystals allowed the collection of 24% more useful reflections and improved the resolution from 1.6 to 1.35 Å. Other improvements were also noted including lower isotropic B-factors of 16.9, versus 23.8 Å² for their terrestrial counterparts. High-resolution laser interferometry was applied quantitatively to evaluate the influence of dimer impurity on growth kinetics. It is shown that the growth of the (1 0 1) face from solution into which 1% dimers were introduced decelerates with increasing solution flow rate and the growth stops at a flow rate of about 0.2 mm/s. This effect occurs faster than in ultrapure solutions. The covalently bound dimers essentially increase the amplitudes of the striation-inducing growth rate fluctuations. The effect is ascribed to the enhanced transport of growth inhibiting HEWL dimer to the interface. Theoretical analysis shows that a stagnant solution around a growing crystal is strongly depleted with respect to impurity by about 60% for the measured growth parameters as compared to the solution bulk. Thus, a crystal in microgravity grows from essentially purer solution than the ones in the presence of convection flows. Therefore, it traps less stress inducing impurity and should be more perfect. For crystal/impurity systems where K_eff is small enough microgravity should have an opposite effect.     

Studies of the Growth Habits of the AgGaSe2 Single Crystal

High quality AgGaSe₂ single crystals with 20 mm in diameter and 55 mm in length have been grown by the modified Bridgman technique and the growth habits of AgGaSe₂ single crystals have been investigated in detail. It is found that the shape of the growth ampoule affects greatly the nucleation and the growth of AgGaSe₂ single crystal. A new cleavage face (101) and the natural faces are observed in the as-grown crystals. For some cases, the growing direction is normal to the (316) face.     

Polycrystalline Synthesis and Single Crystal Growth of AgGaS2

A modified two temperature vapor transport procedure has been used to synthesize AgGaS₂ polycrystalline materials at 1060 °C from high-purity Ag, Ga, S elements. The results showed that the polycrystalline materials are pure single phase AgGaS₂ by X-ray powder diffraction analysis. The polycrystalline ingot includes a few interior voids and has a high mass density. The AgGaS₂ ingot with 12 mm in diameter and 20 mm in length has been grown by the modified Bridgman technique in two-zone vertical furnace. As-grown AgGaS₂ ingot was characterized by the X-ray diffraction technique, obtained the rocking curve of the crystal (011) face, it is shown that the ingot is AgGaS₂ single crystal. The infrared transparent of the crystal at 2 ∼ 10μm is 49% (and absorption coefficient is 0.74 cm^—1).     

Synthesis,characterization, crystal structure and NLO properties of a new mixed crystal potassium sodium ammonium dihydrogenphosphate K0.23Na0.23(NH4)0.54H2PO4

Potassium sodium ammonium dihydrogenphosphate K_0.23Na_0.23(NH₄)_0.54H₂PO₄ (KSADP), a new mixed crystal has been grown in aqueous medium by the slow evaporation of equimolar mixture of ammonium dihydrogenphosphate (ADP), potassium dihydrogenphosphate (KDP) and sodium dihydrogenphosphate (SDP). Crystal composition as determined by single crystal X-ray diffraction analysis reveals that it belongs to the tetragonal system with noncentrosymmetric space group I-42d and it is structurally similar to ADP with cell parameter values, a=7.4794(4) Å; b=7.4794(4) Å; c=7.2974(11) Å; υ=408.23(7) Å³; z=4. The presence of sodium and potassium in ADP matrix was confirmed by inductively coupled plasma emission spectrometry and energy dispersive X-ray spectroscopy. The partial cationic substitution results in defect centers influencing the physical properties. Slight shifts in vibrational patterns could be attributed to strains in the lattice. Refinement of structure by single crystal XRD analysis reveals that potassium, sodium and ammonium coexist in the mixed crystal. The surface morphology of the as-grown specimen, which is changed as a result of cationic incorporation, was studied by scanning electron microscopy. The relative second harmonic generation (SHG) efficiency measurements revealed that the mixed crystal has a superior NLO activity than ADP.     

Complex formation and background impurity of Oxygen in the PbTe:Eu doped crystals grown from melt by the Bridgman method

The magnetic field dependence of magnetization M(B) at the temperature 1.72 K in magnetic fields up to 5 T and the temperature dependence of magnetic susceptibility (M_S) χ(T) in the temperature range 1.7–400 K of six PbTe:Eu samples with the concentration of Eu impurity of the order of 1×10¹⁹–1×10²⁰ cm^?3, prepared from the doped crystals grown from the melt by the Bridgman method, have been investigated. It is shown that the dependence of M(B) and χ(T) can be quantitatively explained by the contribution of the single centers of Eu ions, their pairs, and the matrix of the doped crystals using the same set of parameters for each sample. This is true provided we use in our analysis the values of the exchange integrals between Eu ions in EuO normalized with the lattice constant of PbTe, i.e., J₁/k_B=0.056 K for the ferromagnetic interaction of the NN (nearest neighbor) pairs and J₂/k_B=?0.13 K for the antiferromagnetic interaction of the NNN (next nearest neighbor) pairs, as well as different values of the M_S of crystal χ_matrix. It is revealed that the probability of the formation of complexes based on the magnetic impurity pairs is higher in the incipient section of a doped ingot, and it decreases towards the ingot end where the single centers of Eu ions become the only centers of the impurity. We conclude that the pairs of Eu²⁺ ions, which are formed during the growth of the PbTe:Eu ingots from melt by the Bridgman method, are the constituents of the complexes of the magnetic impurities with the background Oxygen impurities in the crystal matrix of the doped lead telluride. It is shown that the formation of the complexes leads to an increase of the M_S of crystal matrix χ_matrix and can even cause the change of its sign from minus to plus, i.e., it can convert the crystal matrix from the diamagnetic to paramagnetic state. The possible causes of this effect are analyzed.