Crystallographic,optical and magnetic properties of Co‐doped ZnO thin films synthesized by sol gel route

ZnO thin films with various Co doping levels (0%, 1%, 3%, 5%, 8%, respectively) have been synthesized by sol gel spin coating method on glass substrates. XRD and XPS studies of the films reveal that cobalt ions are successfully doped into ZnO crystal lattice without changing the hexagonal wurtzite structure. The morphologies are studied by SEM and AFM and show wrinkle network structures with uniform size distribution. With Co doping concentration increasing, the wrinkle network width decreases gradually. The transmittance spectra indicate that Co doping can effectively reduce the optical bandgap of ZnO thin films. Photoluminescence show that all samples have ultraviolet, violet and green emission. When Co doping concentration increases up to 5%, the intensity of violet emission is greatly increased and a strong deep blue emission centered at 439 nm appears. The ferromagnetism of all samples was observed at room temperature. The emission mechanisms and ferromagnetism origination are discussed in detail. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,structure and optical characterization of Al‐doped ZnO nanoparticle thin films

Al‐doped ZnO nanoparticle thin films were prepared on glass substrate at the optimum temperature of (410±10) °C by spray pyrolysis technique using zinc nitrate as a precursor solution and aluminium chloride as a dopant. The dopant concentration (Al/Zn at%) was varied from 0 to 2 at%. Structural analysis of the films shows that all the films are of polycrystalline zinc oxide in nature, possessing hexagonal wurtzite structure. The films exhibit variation in peak intensities corresponding to (100), (002) and (101) reflection planes on Al‐doping. The crystallite size calculated by Scherrer formula has been found to be in the range of 35‐65 nm. The optical absorption study shows that the optical band gap in the Al‐doped films varies in the range of 3.11 – 3.22 eV. The width of localized states in the band gap estimated by the Urbach tail analysis has been found to be minimum in case of the 1 at% Al‐doped zinc oxide thin film. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Surface morphology,structural and optical properties of polar and non-polar ZnO thin films: A comparative study

The polar and non-polar ZnO thin films were fabricated on cubic MgO (1 1 1) and (0 0 1) substrates by plasma-assisted molecular beam epitaxy. Based on X-ray diffraction analysis, the ZnO thin films grown on MgO (1 1 1) and (1 0 0) substrates exhibit the polar c-plane and non-polar m-plane orientation, respectively. Comparing with the c-plane ZnO film, the non-polar m-plane ZnO film shows cross-hatched stripes-like morphology, lower surface roughness and slower growth rate. However, low-temperature photoluminescence measurement indicates the m-plane ZnO film has a stronger 3.31 eV emission, which is considered to be related to stacking faults. Meanwhile, stronger band tails absorbance of the m-plane ZnO film is observed in optical absorption spectrum.     

Influence of substrate and film thickness on structural,optical and electrical properties of ZnO thin films

Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of 450 °C. It has been found that the average growth rate on Si (100) substrate (8.6 nm/min) is higher than that on Sapphire (0001) substrate (2.6 nm/min) in an identical growth condition which clearly shows the virtual role of substrates. The lower growth rate on Sapphire (0001) suggests that the increasingly ordered and uniform growth due to less lattice mismatch. The grown films have been characterized by X‐ray diffraction (XRD), Reflectance, Photoluminescence (PL) and Hall measurements. The XRD result (FWHM) reveals that for lower growth time, the films grown on Si (100) is better than on Sapphire (0001). Conversely, for higher growth time, the films grown on Sapphire (0001) is better than on Si (100). The variation of strain behavior due to thickness on both substrates has been justified by UV‐Vis reflectance, photoluminescence and Hall effect measurements. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optical properties of ZnO thin films deposited onto ITO/glass substrates

ZnO films were prepared by post deposition thermal oxidation in the ambient atmosphere of metallic Zn films (d = 100–170 nm) vacuum evaporated onto unheated indium tin oxide (ITO)-coated glass substrates. To study the effect of the substrate position during the Zn film deposition on the microstructure and optical properties (transmittance, reflectance and absorbance) of as obtained ZnO films, two set of Zn samples simultaneously deposited onto horizontally and obliquely arranged substrates were prepared. The as obtained ZnO films had a polycrystalline wurtzite structure, those obtained from normally deposited Zn films having a higher c-axis preferred orientation and a lower optical transmittance in the visible wavelength range. The optical band-gap was found to be of 3.14 eV for oxidized normally deposited virgin Zn films and of 3.16 eV for those obliquely deposited.     

Influence of precursor concentration on structural,morphological and electrical properties of spray deposited ZnO thin films

Nanostructured ZnO thin films were coated on glass substrate by spray pyrolysis using Zinc acetate dihydrate as precursor. Effect of precursor concentration on structural, morphological, optical and electrical properties of the films was investigated. The crystal structure and orientation of the ZnO thin films prepared with four different precursor solution concentrations were studied and it was observed that, the prepared films are polycrystalline in nature with hexagonal wurzite structure. The peaks are indexed to (100), (002), (101), (102) and (110) planes. Grain size and texture coefficient (TC) were calculated and the grain size found to increase with an increase in precursor concentration. Presence of Zn and O elements was confirmed with EDAX spectra. Optical absorption measurements were carried out in the wavelength region of 380 to 800 nm and the band gap decreases as precursor concentration increases. The current‐voltage characteristics were observed at room temperature and in dark. It was found that for the films deposited at four different precursor concentrations, the conductivity improves as precursor concentration increases. As trimethyl amine TMA is a good marker for food quality discrimination, sensing behavior of the films at an optimized operating temperature of 373 K, towards various concentrations of (TMA) was observed and reported. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of oxygen/argon ratio on structural,electrical and optical properties of Ag-doped ZnO thin films

Ag-doped ZnO (ZnO:Ag) thin films were deposited on quartz substrates by radio frequency magnetron sputtering technique. The influence of oxygen/argon ratio on structural, electrical and optical properties of ZnO:Ag films has been investigated. ZnO:Ag films gradually transform from n-type into p-type conductivity with increasing oxygen/argon ratio. X-ray photoelectron spectroscopy measurement indicates that Ag substitutes Zn site (Ag_Zn) in the ZnO:Ag films, acting as acceptor, and being responsible for the formation of p-type conductivity. The presence of p-type ZnO:Ag under O-rich condition is attributed to the depression of the donor defects and low formation energy of Ag_Zn acceptor. The I–V curve of the p-ZnO:Ag/n-ZnO homojunction shows a rectification characteristic with a turn-on voltage of ∼7 V.     

Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films

ZnTe thin films were deposited onto well‐cleaned glass substrates kept at different temperatures (Ts = 303, 373 and 423 K), by vacuum evaporation method under the pressure of 10^–5 Torr. The thickness of the film was measured by quartz crystal monitor and verified by the multiple beam interferometer method. The structural characterization was made using X‐ray diffractometer with filtered CuKα radiation. The grain sizes of the microcrystallines in films increases with increase in substrate temperature. The strain (ε), grain size (D) and dislocation density (δ) was calculated and results are discussed based on substrate temperature. Optical behaviour of the film was analyzed from transmittance spectra in the visible region (400–800 nm). The optical transition in ZnTe films is direct and allowed type. The optical band gap energy shows an inverse dependence on substrate temperature and thickness. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thickness and substrate orientation dependence of ferromagnetism in Mn doped ZnO thin films

The effect of film thickness and substrate orientation on ferromagnetism in Mn doped ZnO thin films have been studied. The Mn doped ZnO films of different thickness (15, 35 and 105 nm) have been grown on both Si (100) and Si (111) substrates. The structural, electrical, optical, elemental and magnetic properties of the films have been investigated by X‐ray diffraction (XRD), Hall Effect measurements, photoluminescence (PL), energy dispersive spectroscopy (EDS) and vibrating sample magnetometer (VSM), respectively. It is found that all the properties are strongly influenced by the film thickness and substrate orientation. The XRD analysis confirmed that the formation of high quality monophasic hexagonal wurtzite structure for all the grown films. The room temperature VSM measurements showed that the films of lower thickness have better ferromagnetism than that of the thicker films grown on both the substrates. Among the lower thickness films, the film grown on Si (111) substrate has higher saturation magnetization (291×10^‐5 emu cm^‐3) due to high density of the defects. The observed ferromagnetism has been well justified by XRD, Hall measurements and PL. The presence of Mn atoms in the film has been confirmed by EDS. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optical properties of Mg‐doped ZnO thin films prepared by a modified Pechini method

ZnO thin films with different Mg doping contents (0%, 3%, 5%, 8%, 10%, respectively) were prepared on quartz glass substrates by a modified Pechini method. XRD patterns reveal that all the thin films possess a polycrystalline hexagonal wurtzite structure. The peak position of (002) plane for Mg‐doped ZnO thin films shifts toward higher angle due to the Mg doping. The crystallite size calculated by Debey‐Scherrer formula is in the range of 32.95–48.92 nm. The SEM images show that Mg‐doped ZnO thin films are composed of dense nanoparticles, and the thickness of Mg‐doped ZnO thin films with Mg doped at 8% is around 140 nm. The transmittance spectra indicate that Mg doping can increase the optical bandgap of ZnO thin films. The band gap is tailored from 3.36 eV to 3.66 eV by changing Mg doping concentration between 3% and 10%. The photoluminescence spectra show that the ultraviolet emission peak of Mg‐doped ZnO thin films shifts toward lower wavelength as Mg doping content increases from 3% to 8%. The green emission peak of Mg‐doped ZnO thin films with Mg doping contents were 3%, 8%, and 10% is attributed to the oxygen vacancies or donor‐acceptor pair. These results prove that Mg‐doped ZnO thin films based on a modified Pechini method have the potential applications in the optoelectronic devices.     

Influence of substrate temperature on the structure of ZnO:Al thin films

ZnO: Al films were prepared using low cost spray pyrolysis technique. The dependence of the physical properties on the substrate temperature was studied. The best films obtained at 500°C substrate temperature with preferred [002] orientation. The sheet resistance decreases with increased substrate temperature, and values as low as R_sh = 207 Ω/cm² are reached for substrate temperature of 500°C. The optical transmittance of films increased by increasing the substrate temperature and received to 75% at 500°C. (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical and photoluminescence properties of ZnS: Cu nanoparticle thin films as a function of dopant concentration and quantum confinement effect

Thin films of ZnS: Cu nanoparticles were deposited in chemical bath by a pH controlled solution synthesis technique. The copper concentration was varied from 0 to 0.1M%. XRD and SEM indicated variations in diffracted intensity and morphology with Cu concentration. The PL spectrum of the undoped ZnS nanoparticles showed emission peaks at 393 and 432nm that could be attributed to the intrinsic defect states of ZnS nanoparticles. For ZnS: Cu samples three peaks in the range of 390nm, 480nm and 525nm were observed. With increase in Cu concentration from 0.001 to 0.1M%, the peak position of 480nm and 525nm did not change, whereas 390nm peak red shifted to longer wavelength region to 422nm. In addition, it was found that the overall photoluminescence intensity reached maximum at 0.01M% and quenched with further increase in Cu concentration. Enhancement of blue and green light emission by seven and twenty fivefold respectively compared to undoped ZnS was observed in ZnS: Cu with optimal dopant concentration. Time resolved decay of photoluminescence showed faster decay for 390 – 420nm purple/ blue emission compared to green (525nm) Cu related emission which is in the microsecond time scale. Optical absorption measurements indicate enhancement of band gap (3.89eV) for undoped ZnS suggesting the quantum confinement effect in the developed nanoparticles of size below the Bohr diameter. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical, and electrical properties of electron beam evaporated CdSe thin films

CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm^‐1 and 625 cm^‐1respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optical properties of single-crystal ZnMgO thin films grown on sapphire and ZnO substrates by RF magnetron sputtering

High-quality ZnMgO films were grown by the radio frequency (RF) magnetron sputtering technique in pure oxygen ambient. Single-crystal films were obtained, when the Mg concentration was Zn_0.87Mg_0.13O or lower in the case of ZnMgO/Al₂O₃ and when it was Zn_0.65Mg_0.35O or lower in the case of ZnMgO/ZnO. Polycrystalline films were obtained when the growth temperature was lower than 500 °C, regardless of the Mg concentration. Position of the photoluminescence (PL) ultraviolet (UV) peak of the ZnMgO film shifted with the addition of Mg, from 3.33 eV (ZnO) to 3.51 eV (Zn_0.87Mg_0.13O) and 3.70 eV (Zn_0.65Mg_0.35O). It was also observed that growth of the ZnMgO films at higher temperature resulted in higher band-gap energy. It was proposed that this phenomenon is because concentration of the substitutional Mg atoms occupying Zn site is increased as the growth temperature increases.     

Structural,magnetic and transport properties of ion beam deposited Co thin films

Magnetic nanostructures display new and interesting physical phenomena and are currently used in a large variety of applications. We studied the structural, magnetic and transport properties of Co thin films deposited by ion beam sputtering. We probed the influence of the buffer layer material (Al, Cu, Ru or Ta) and thickness (10–100 Å) on the structural properties of Co thin films. Using X-ray diffraction we observed that textured fcc Co films can be grown on amorphous Ta as thin as 20 Å but for the other buffer layers no texture is observed. We also studied by magneto-optical Kerr effect (MOKE) the magnetic properties of the Co thin films as a function of Co thickness (100–1000 Å). Finally, the electrical resistivity and anisotropic magnetoresistance (AMR) of our Co thin films (on a Ta buffer) was obtained as a function of Co thickness.     

Non-crystalline Se thin films deposited from controlled vapor-preparation,crystallization and optical properties

Films of amorphous Se were prepared in well-defined conditions: the temperature and composition of the Se vapor just before its deposition and the temperature of the polished quartz substrate were carefully controlled. By measuring (a) the thickness of the films and (b) their reflection and transmission coefficients in the range $\text{λ = 4000–7000}\text{A}\text{?}$, the values of n, k and of an optical gap E_opt were obtained; E_opt seems to be characteristic of the preparation. Initial results concerning crystallization of the thin films are also discussed.     

Fe3+ doped SiO2 nanostructured gel-glasses: Structural,optical and magnetic properties

Transparent crack-free and bubble-free Fe³⁺ doped SiO₂ nanostructured gel-glasses were obtained by the sol–gel process. The process involves the hydrolysis and condensation of an appropriate molar ratio of tetraethoxysilane (TEOS), absolute ethanol, nitric acid and ferric nitrate, followed by stepwise annealing at temperatures ranging from 110 °C to 1000 °C. The structural variation of the gel-glasses and their influence on physical properties during annealing has been studied. It has been observed that monolithicity and chemical environment around Fe³⁺ in the gel-glasses are strongly dependent on the annealing temperatures. The colour of gel-glass samples is different for different annealing temperatures, mainly due to the different co-ordination state of Fe³⁺ and the generation of Fe₂O₃ colloids of size 20–60 nm in the silica matrix. The annealing process facilitates the tuning of the UV–visible transmission cut-off edge in high optical quality Fe³⁺ doped silica gel-glasses. A marked difference in the magnetic properties of these glasses is also observed with annealing temperatures.     

Structural,compositional and optical properties of gallium selenide thin films doped with cadmium

Polycrystalline cadmium doped gallium selenide thin films were obtained by the thermal co‐evaporation of GaSe crystals and Cd grains onto glass substrates. The structural, compositional and optical properties of these films have been investigated by means of X‐ray diffraction, energy dispersive X‐ray analysis and UV‐visible spectroscopy techniques, respectively. Particularly, the elemental analysis, the crystalline nature, the energy band gap, the refractive index, the dispersion energy and static dielectric constant have been identified. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct forbidden energy band gap of 1.22 eV. The cadmium doping has caused a significant decrease in the values of the energy band gap and in all the dispersive optical parameters, as well. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical and electrical properties of Ga-doped and (Ga,Co)-codoped ZnO films

The Ga-doped and (Ga, Co)-codoped ZnO films were grown on quartz glass substrate by inductively coupled plasma enhanced physical vapor deposition. The effect of Co doping and oxygen pressure on the structural, optical, electrical and magnetic properties of the as-grown films was investigated. The structural characterization revealed that high-quality films were grown with wurtzite structure and c-axis preferred crystalline orientation. The surface morphology was affected by Co doping and oxygen pressure. Room-temperature ferromagnetism was observed in (Ga, Co)-codoped ZnO films. We found that the optical and electrical properties were degraded with Co doping. The Ga-doped ZnO films had an average transmittance of above 88% in the visible wavelength, while (Ga, Co)-codoped ZnO showed a lower average transmittance (∼65%) due to the d-d transitions of Co²⁺. The resistivity and Hall mobility of (Ga, Co)-doped ZnO samples were lower than those of Ga-doped ZnO films when grown at the same oxygen pressure.     

Morphology,composition, structure and optical properties of thermally annealed Cu2O thin films prepared by reactive DC sputtering method

Abstract

Thin films copper oxides are perspective materials for many optoelectronic applications, including photovoltaics. The samples were deposited on glass and silicon substrates by magnetron sputtering method using Modular Platform PREVAC. After deposition the samples were thermally treated by annealing in oxygen atmosphere for 60?min at 450?°C. Morphology confirms that all the films have crystalline structure. Optical measurements show that the films have wide band gap within the range 2.20÷2.48?eV before and 2.03÷2.40?eV after annealing. The article presents the discussion about the influence of annealing on Cu₂O thin film parameters.