A comparative study of pure and potassium doped cadmium mercury thiocyanate single crystals grown in silica gel

Pure and potassium doped cadmium mercury thiocyanate single crystals have been obtained from silica gel by the process of diffusion. The X‐ray diffraction studies reveal the crystal lattice of both pure and doped crystals to be tetragonal. The crystalline perfection of the grown crystals were investigated by high resolution X‐ray diffraction analysis and the quality of the crystals are found to be extremely good. Transmission and Fourier transform infrared spectra were recorded for the grown crystals. The TG/DTA analyses show that the crystals are highly thermally stable. The mechanical strength of the crystals were studied by Vickers microhardness test and a study of their second harmonic generation efficiency in comparison with urea has been made by performing Kurtz powder test. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical properties of pure and metal ions doped ammonium sulfate single crystals

A study of the optical properties of pure‐and some metal ions doped ammonium sulfate crystals (AS) were made. Optical constants of AS crystals were calculated at room temperature. The optical absorption coefficient (α ) was analyzed and interpreted to be in the allowed direct transition. The introduction of Rb⁺ or Cs⁺ ions gives rise to an intense charge transfer band with a maximum at λ= 310 nm in the optical spectrum. In case of Cr³⁺ ‐doping, the absorption shows a shoulder just before the onset band to band transition. The values of the allowed direct energy gap E_g for undoped and doped crystals were calculated. It was found that E_g values were decreased with metal ions doping. The refractive index, the extinction coefficient and both the real and imaginary parts of the dielectric permittivity were calculated as a function of photon energy. The validity of Cauchy‐Sellimeier equation was checked in the wavelength range 4.9 ‐ 5.6 eV and its parameters were calculated. Applying the Single‐Effective‐Oscillator model, the moments of ε (E ) could be estimated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence study of annealing effects on CuI crystals grown by evaporation method

Cuprous iodide (CuI) is the ultrafastest inorganic scintillation crystal at present. But the low intensity of its ultrafast component luminescence limits the wide application of CuI at room temperature. In this paper, the photoluminescence (PL) characteristics of different quality CuI crystals before and after annealing in various conditions have been investigated in terms of peak position and peak intensity. The origin of different emission band peaked around 426 nm, 680 nm, 718 nm and 820 nm is discussed and the excitation spectra of two mainly emission bands is obtained. Meanwhile, the relative peak intensity of the ultrafast luminescence component to slow lumiescence component of CuI crystals has been studied with respect to the defect concentration of I vacancies. Especially, the method of improving the intensity of ultrafast compentent luminescence of CuI crystals is concluded. These results can provide an important reference for optimizing the luminescence performance of CuI crystals.     

Characterization of pure and doped potassium hydrogen tartrate single crystals grown in silica gel

Growth of pure‐, sodium‐ and lithium‐ doped potassium hydrogen tartrate single crystals by gel technique is reported. Growth conditions conducive for the growth of single crystals are worked out. The crystals are characterized by using powder XRD, SEM, FTIR, AES, EDAX, CH analysis and thermoanalytical techniques. The stoichiometric composition for the grown crystals are established as KHC₄H₄O₆.H₂O, (K)_0.98(Na)_0.02.H₂O and (K)_0.94(Li)_0.06HC₄H₄O₆.H₂O. Doping of sodium and lithium in the pure potassium hydrogen tartrate single crystals is found to influence the size, perfection, morphology, crystal structure and the thermal stability of crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X-ray diffraction topography study of defects in potassium dihydrogen phosphate (KDP) and ammonium dihydrogen phosphate (ADP) single crystals

The direct observation of dislocations in KH₂PO₄(KDP) and NH₄H₂PO₄ (ADP) single crystals has been performed by X-ray diffraction topography methods. Crystals were grown by slow cooling of stirred solutions on different types of seed crystals. It is demonstrated that the main sources of dislocation generation are the seed surface, inclusions of mother liquor and foreign particles. Space orientation of dislocations and their Burgers vector directions are found. In regions far from the seed the dislocation density did not exceed 10³ cm⁻² and a number of specimens with cross-sectional areas up to several cm² were free from dislocations. Dynamical phenomena characteristic of the diffraction in a weakly deformed lattice have been observed over a wide range of μ t at the boundaries between the {101} and {100} growth sectors having different impurity contents. Several crystals show also nonuniform impurity distribution in the form ot the layers parallel to growing face (growth layers).     

Magnetic and magnetostrictive behavior of Dy3+ doped CoFe2O4 single crystals grown by flux method

We studied the effect of Dy³⁺ content on the magnetic properties of cobalt ferrite single crystal. The single crystals of CoFe_1.9Dy_0.1O₄ were grown by the flux method using Na₂B₄O₇.10 H₂O (Borax) as a solvent (flux). The black and shiny single crystals were obtained as a product. The X-ray diffraction analysis at room temperature confirmed the spinel cubic structure with lattice constant a=8.42 Å of the single crystals. The compositional analysis endorses the presence of constituents Co, Fe and Dy elements after sintering at 1300 °C within the final structure. The magnetic hysteresis measurements at various temperatures viz. 10 K, 100 K, 200 K and 300 K reveal the soft ferrimagnetic nature of the single crystal than that of for pure CoFe₂O₄. The observed saturation magnetization (M_s) and coercivity (H_c) are found to be lower than that of pure CoFe₂O₄ single crystal. The magnetostriction (λ) measurement was carried out along the [001] direction. The magnetic measurements lead to conclude that the present single crystals can be used for magneto-optic recording media.     

Synthesis,growth and characterization of single crystals of pure and thiourea doped L‐glutamic acid hydrochloride

L(+)Glutamic acid hydrochloride [HOOC (CH₂)₂CH(NH₂) COOH·HCl], a monoamino dicarboxylic acid salt of L‐Glutamic acid was synthesized and the synthesis was confirmed by FTIR analysis. Solubility of the material in water was determined. Pure and Thiourea doped L‐Glutamic acid hydrochloride crystals were grown by low temperature solution growth using solvent evaporation technique. XRD, UV‐Vis‐NIR analyses were carried out for both pure and thiourea doped crystals. The crystals were qualitatively analyzed by EDAX analysis and the presence of thiourea was confirmed. The cell parameters of L‐Glutamic acid hydrochloride have been determined as a = 5.151 Å, b = 11.79 Å, c = 13.35 Å by X‐ray diffraction analysis and it crystallizes in orthorhombic space group P2₁2₁2₁. UV‐Vis‐NIR spectra analysis showed good optical transmission in the entire visible region for both pure and doped crystals. Micro hardness of both pure and doped crystals has been determined using Vickers micro hardness tester. The SHG efficiencies of both pure and doped crystals were determined using Kurtz powder test and pure L‐Glutamic acid hydrochloride crystal was found to possess better efficiency than thiourea doped L‐Glutamic acid hydrochloride crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of microdefects in GaP and GaPZn single crystals grown by the liquid-encapsulation Czochralski method

Microdefects in undoped and zinc-doped GaP single crystals grown by the liquid-encapsulation Czochralski method have been studied by X-ray diffuse scattering. In undoped GaP single crystals, deviation from stoichiometry increases from the beginning to the end of an ingot. The ingot end is characterized by enhanced precipitation of excess gallium with formation of platelike microdefects. With an increase in their size, stress relaxation around microdefects begins to manifest itself. Doping with zinc leads to a significant change in the microdefect formation pattern.     

Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

The effect of the supply of depleted Si solute elements on the compositional variation in the Si-rich SiGe bulk crystals was studied using the method which was used to grow Ge-rich SiGe single crystals with a uniform composition. By selecting the proper pulling rate, we can obtain Si-rich Si_1−xGe_x bulk crystals with uniform composition of x=0.1 without using the supply mechanism of depleted Si solute elements. When the supply mechanism of Si solute elements was used, the initial composition in Si-rich SiGe crystals can be much more easily determined by controlling the growth temperature than that in Ge-rich crystals because the Si seed crystal is not melted down. The supply of Si solute elements is very effective to change the compositional variation even for Si-rich SiGe crystals.     

Effect of ammonium malate on growth rate,crystalline perfection,structural, optical,thermal, mechanical,dielectric and NLO behaviour of ammonium dihydrogen phosphate crystals

The effect of ammonium malate on the growth rate, structural, optical, thermal, mechanical, dielectric properties, crystalline perfection and second harmonic generation (SHG) efficiency of ammonium dihydrogen phosphate single crystals grown by the slow cooling method has been investigated. The lattice parameters of the grown crystals were obtained by the single-crystal X-ray diffraction analysis. Fourier transform infrared studies confirm the functional groups of the crystals. UV–vis study shows that the transparency is increased much by the dopant. Thermal analysis was performed to study the thermal stability of the grown crystals. Vickers hardness measurements reveal the higher hardness of the doped crystals. Low dielectric losses were observed from the dielectric measurements for the doped ADP crystals. The high-resolution X-ray diffraction studies show that the crystalline perfection of the crystals is good. The relative SHG efficiency measurements revealed that the dopant has enhanced the efficiency.     

Effect of thermal annealing conditions on the microdefect formation in undoped GaAs single crystals grown by Czochralski method

The effect of thermal annealing conditions on the microdefect formation in undoped GaAs single crystals grown by the Czochralski method has been studied by X-ray diffraction and metallographic analyses. It is found that the standard heat treatments performed with the aim to relieve elastic stresses and to increase the homogeneity of wafers substantially affect microdefects formed in the crystal. Upon annealing, the micro-defects in ingots and wafers exhibit different behavior. Prolonged annealing leads to an increase in the sizes of large microdefects but does not suppress the formation of small-sized microdefects. The latter defects are formed at T< 950°C upon cooling from the annealing temperature, and their number strongly depends on the density of dislocations, which serve as sinks for intrinsic point defects.     

Optical and dielectric studies on pure and Ni2+, Co2+ doped single crystals of bis thiourea cadmium chloride

Good quality single crystals of Ni²⁺, Co²⁺ ions doped Bisthiourea Cadmium Chloride (BTCC) are some of the excellent and efficient non‐linear optical materials grown from aqueous solution by slow evaporation method. The lattice parameters of the grown crystals are determined by single crystal X‐ray analysis. UV spectral analyses on these samples reveal the improved transparency of the doped crystals ascertaining the inclusion of metal ion in the lattice. FTIR spectral analysis carried out on the materials confirm the presence of functional groups. Dielectric measurements reveal that the dielectric constant of pure and doped crystals decreases with increase of frequency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of sulphamic acid single crystals grown by Sanakaranarayanan‐Ramasamy (SR) method

By directional solidification, single crystal of Sulphamic acid (SA) was successfully grown from aqueous solution by Sankaranarayanan‐Ramasamy (SR) method. A vertically designed L‐bend was used to avoid the effect due to spurious nucleation. A vertical bottom‐seeded ampoule was used for the growth of single crystal. A seed crystal was mounted at the bottom of the ampoule. Sulphamic acid crystals of up to 40 mm in diameter and 60 mm in length have been grown with a growth up to 10 mm per day. The grown sulphamic acid single crystal was characterized using X‐ray powder diffraction analysis, Raman, FTIR, and optical transmission studies. The dielectric behaviour was measured in the frequency range of 1 kHz–10 MHz for the temperature ranges from 30 °C to 170 °C. The sulphamic acid single crystal was also grown by conventional method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

On the growth mechanism of sodalite single crystals grown by the hydrothermal method on single crystal seeds coated with informative informative interfacial layers

The growth mechanism of the early formation stages of sodalite single crystals grown by the method of hydrothermal synthesis on single crystal seeds coated with interfacial layers of polycrystalline silver has been studied at an electronmicroscopic scale. Coating with interfacial layers leads to a very weak adhesion between the overgrown single crystal and the surface of the interfacial layer on top of the seed, thus providing a unique possibility of detaching the overgrown single crystals from seeds and investigating the very early crystallization stages by the morphology of the growth surface. In local microregions of seed surfaces coated with interfacial layers discrete particles arise differing from one another in morphology, this being primarily associated with the electrical heterogeneity of seed surfaces. During crystallization, the space between the discrete particles was filled with the hydrothermal solution which represented a liquid interfacial layer exhibiting informative properties occurred under the influence of electrically active elements of the seed surface. At the boundary separating the liquid interfacial layers with particular informative properties from the rest of the solution volume, at early crystallization stages, together with the formation of discrete particles directly on the coated seed surface, growth of a continuous sodalite single crystal took place. The informative properties of seed surfaces, which are regularly modified due to coating with interfacial silver layers, determine the occurrence on local regions of seed surfaces (under appropriate crystallization conditions) of one or the other polymorphous modification: either hexagonal – cancrinite, or cubic – sodalite.     

Structural,electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X‐Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1 × 10⁹ to 6.5 × 10⁵ Ω‐cm. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for as‐grown, 36 and 472 meV for as‐implanted and 39 and 647 meV for implanted and annealed GaSe single crystals at 500°C. Calculated activation energies from the conductivity measurements indicated that the transport mechanisms are dominated by thermal excitation at different temperature intervals in the implanted and unimplanted samples. By measuring photoconductivity (PC) measurement as a function of temperature and illumination intensity, the relation between photocurrent (I_PC) and illumination intensity (Φ) was studied and it was observed that the relation obeys the power law, I_PC αΦⁿ with n between 1 and 2, which is indication of behaving as a supralinear character and existing continuous distribution of localized states in the band gap. As a result of transmission measurements, it was observed that there is almost no considerable change in optical band gap of samples with increasing annealing temperatures for as‐grown GaSe; however, a slight shift of optical band gap toward higher energies for Ge‐implanted sample was observed with increasing annealing temperatures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Complex formation and background impurity of Oxygen in the PbTe:Eu doped crystals grown from melt by the Bridgman method

The magnetic field dependence of magnetization M(B) at the temperature 1.72 K in magnetic fields up to 5 T and the temperature dependence of magnetic susceptibility (M_S) χ(T) in the temperature range 1.7–400 K of six PbTe:Eu samples with the concentration of Eu impurity of the order of 1×10¹⁹–1×10²⁰ cm^?3, prepared from the doped crystals grown from the melt by the Bridgman method, have been investigated. It is shown that the dependence of M(B) and χ(T) can be quantitatively explained by the contribution of the single centers of Eu ions, their pairs, and the matrix of the doped crystals using the same set of parameters for each sample. This is true provided we use in our analysis the values of the exchange integrals between Eu ions in EuO normalized with the lattice constant of PbTe, i.e., J₁/k_B=0.056 K for the ferromagnetic interaction of the NN (nearest neighbor) pairs and J₂/k_B=?0.13 K for the antiferromagnetic interaction of the NNN (next nearest neighbor) pairs, as well as different values of the M_S of crystal χ_matrix. It is revealed that the probability of the formation of complexes based on the magnetic impurity pairs is higher in the incipient section of a doped ingot, and it decreases towards the ingot end where the single centers of Eu ions become the only centers of the impurity. We conclude that the pairs of Eu²⁺ ions, which are formed during the growth of the PbTe:Eu ingots from melt by the Bridgman method, are the constituents of the complexes of the magnetic impurities with the background Oxygen impurities in the crystal matrix of the doped lead telluride. It is shown that the formation of the complexes leads to an increase of the M_S of crystal matrix χ_matrix and can even cause the change of its sign from minus to plus, i.e., it can convert the crystal matrix from the diamagnetic to paramagnetic state. The possible causes of this effect are analyzed.     

XRD,thermal, FTIR and SEM studies on gel grown γ‐glycine crystals

Glycine is the smallest among amino acids. The polymorphs, α‐ and γ‐forms of glycine were crystallized in silica gel by reduction of solubility method. The grown crystals were characterized by single crystal X‐ray diffraction studies and density determination. Fourier transform infrared spectroscopic studies and thermogravimetric analysis of γ‐glycine were also conducted. Morphological and scanning electron microscopic (SEM) studies were also made and compared with the crystal packing. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical absorption spectra of LiNbO3, Fe:LiNbO3, and Zn:Fe:LiNbO3 single crystals grown by Bridgman method

The optical absorption spectra of LiNbO₃ (LN), Fe:LiNbO₃ (Fe:LN), and Zn:Fe:LiNbO₃ (Zn:Fe:LN) single crystals grown by Bridgman method were measured and compared. The absorption characteristics of the samples and the effects of growth process conditions on the absorption spectra were investigated. The Fe, Zn and Li concentrations in the crystals were analyzed by inductively coupled plasma (ICP) spectrometry. The results indicated that the overall Fe ion and Fe²⁺ concentration in Fe:LN and Zn:Fe:LN crystals increased along the growing direction. The incorporation of ZnO in Fe:LN crystal induced increase of Fe²⁺ in the crystal. Among Fe‐doped and Zn:Fe‐codoped LN single crystals, 3 mol% ZnO doped Fe:LN had a biggest change of Fe²⁺ ion concentration from bottom to top part of crystal. The effects of technical conditions (atmosphere and thermal history) on Fe²⁺ ion concentration were discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on crystal growth,optical and electrical characterization of pure and Dy-doped bismuth silicate single crystals

(0.5 mol%) Dysprosium (Dy) doped bismuth silicon oxide (BSO) single crystals were grown by the Czochralski technique under air atmosphere. Detailed analysis of Dy-doped BSO with pure BSO has been studied through optical analysis. The absorption edges of pure and Dy-doped BSO crystals are found to be 405 nm and 415 nm, respectively. The shift in the absorption edge is contributed to the defect centers created in the crystal with Dy-doping. The shifts observed in the Raman spectra on doping Dy are found to be lower, when compared with the pure BSO crystal. This effect can be correlated to the lattice distortion induced by the Dy doping. The oxide formation and intrinsic defects in the BSO crystal have been identified by photoluminescence analysis. Dielectric measurements reveal that higher permeability value in the BSO sample is due to the presence of charged defects, which can be related to the space charge polarization. There is a slight decrease in dielectric constant on doping with Dy. The piezoelectric value explains the defects formed in the crystal. On poling, d₃₃ value of BSO and Dy-doped BSO are 32 pC/N and 40 pC/N, respectively.