Refractive-index dispersion of glassy semiconductors in the pseudo-binary As2Se3–SbSI system

The bulk chalcogenide glasses in the pseudo-binary system (As₂Se₃)_100?x(SbSI)_x (with x = 20, 30, 50, 70 and 80 at.%) were prepared from high-purity elemental components by melt-quenching technique. It is a system with the variable ratio of classical amorphous compound As₂Se₃ and the molecule of antimony-sulphoiodide, SbSI, which in the monocrystal form is characterized as a ferroelectric. The refractive-index behaviour (magnitude and spectral dispersion) of investigated glasses was determined by the prism method and analyzed. To calculate and discuss the parameters of dispersion in the band gap region three different approaches were used (Cauchy, Sellmeier and Wemple–DiDomenico single-oscillator model). The comparison of the results shows good agreement between all applied models. It was found that the value of the refractive-index shows normal dispersion behaviour and increases with the increase of Sb (or SbSI) content in the investigated system, whereas the optical gap of these glasses E_g slightly decreases.     

Glass transition and specific heats in the systems PS,PSe,AsS and AsSe

The glass transition temperatures were measured in the systems AsS, As_0.5P_0.5S, PSe, AsSe and PAsSe. Heat capacities of the glasses in the selenium systems were obtained by differential scanning calorimetry. As shown by the residual entropies departures from ideality are high in the chalcogen glasses. The results are discussed in terms of the structure of glasses in these systems. The thermodynamic data of glasses and liquids in these systems indicate a balance of intra- and intermolecular saturation of bonds. The amount of polymerization increases with increasing average molecular weight in the glass and with increasing temperature in some of the investigated liquids.     

Thermal expansion of glasses in the As2Se3–AsI3 system

Thermal expansion coefficients (α) of glasses in the As₂Se₃–AsI₃ system are measured in the glass transition region and temperature dependence of the fictive temperature is calculated on the basis of relaxation model. It is found that the increase of AsI₃ content results in: an increase of α, decrease of the glass transition temperature (T_g), increase of the α change at T_g, an effect of quenching rate on α, and also changes in the structural relaxation times spectrum. The data are discussed within the framework of the assumption that the addition of AsI₃ to As₂Se₃ results in: (1) destruction of the As₂Se₃ glass network, (2) structural inhomogeneity of the glasses increase, (3) the temperature dependence of chemical–structural equilibria occurring in the liquid state increases.     

Thermal properties of chalcogenide glasses in the GeSe2–As2Se3–CdSe system

In the present work, thermal properties of GeSe₂–As₂Se₃–CdSe glasses were investigated via DSC measurements. The dependences of glass transition temperature and thermal stability on glass composition were discussed. XRD measurement was also performed to validate the effect of cadmium on the thermal properties of glasses. The calculated Avrami exponent was used to demonstrate the three-dimensional growth of crystals in the glass matrices. The crystallization kinetics for the glasses was studied by using the modified Kissinger and Ozawa equations.     

Local atomic arrangement and bonding studies in amorphous As2Se3As4Se4

The local atomic arrangement in amorphous As₂Se₃As₄Se₄ glasses was investigated with ESCA (electron spectroscopy for chemical analysis) and RDF (radial-distribution function) analysis. Measured changes of RDF peak areas and ESCA chemical shifts give direct evidence for the preservation of the local bonding schemes of both crystalline As₂Se₃ and As₄Se₄ in their amorphous states. The valence-band structures of amorphous As, Se, As₂Se₃ and As₄Se₄ are also measured with ESCA and discussed in conjunction with the bonding schemes of these glasses.     

Electron spin resonance of Mn2+ IN As–Se and As–Te glasses

The electron spin resonance of Mn has been studied in As_xSe_100?x with 0 ? x ? 70 and As_xTe_100?x with 40 ? x ? 70. All samples, except those with x < 20 in As_xSe_100?x, exhibit six hyperfine lines centered at g = 4.3. A g = 2.0 line is observed in As–Se with largely scattered linewidth by samples, but not in As–Te unless oxygen contamination is included in the samples. The g = 4.3 line in As–Se is closely related to a formation of As₂Se₃-type layer structure and interpreted as being caused by Mn situated at the interlayer position and surrounded by four Se atoms in an arrangement of rhombic symmetry. In As–Te, a similar model by four Te atoms is valid in composition near As₂Te₃, but the surrounding Te is replaced by As as As content increases. The g = 2.0 line is concluded to come from phase-separated antiferromagnetic particles of Mn–O and MnSe. The linewidth is scattere by differences in the relative amounts of the two kinds of particles and in particle size.     

Formation of glass in the GeSiS system

The formation of glass in the GeSiS system was investigated. After synthesis of material with the general formula Ge_1?xSi_xS_y, where x was chosen to be 0.05, 0.1, 0.2, 0.3 and y was in the range 1.28–3.6, cylindrical samples were prepared and used for the characterization of glass by means of DTA. It was found that the substitution of germanium with silicon does not lead to any expressive change of the glass transition temperature, crystallization and the onset of melting.     

Multilayer planar structures prepared from chalcogenide thin films of As–Se and Ge–Se systems and polymer thin films using thermal evaporation and spin-coating techniques

We report the preparation of multilayers based on polyamide–imide polymer and As–Se or Ge–Se chalcogenide thin films. Chalcogenide films of As–Se and Ge–Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide–imide films. Fifteen layers of PAI + As–Se system and nineteen layers of PAI + Ge–Se system were coated. Optical properties of prepared multilayers have been established using UV–vis–NIR and Ellipsometric spectroscopy. Both, PAI + As–Se and PAI + Ge–Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge–Se multilayers to lower energies was caused by higher thickness of Ge–Se films. The bandwidth of reflection band of 8 PAI + 7 As–Se multilayer was ～90 nm while bandwidth of PAI + Ge–Se system decreased to ～70 nm because Ge–Se films have 0.1 lower refractive index against As–Se films. Design of 1D-photonic crystals based on alternating chalcogenide and polymer films is a new opportunity for application of chalcogenide thin films as optical materials for near-infrared region.     

Electrical properties of glass and liquid semiconductor system (As2Te3)x(Tl2Se)1−x

We have measured the electrical conductivity and thermoelectric power of the pseudobinary system (As₂Te₃)_x(Tl₂Se)_1−x both in the glass and liquid states. The effect of the addition of excess Tl has also been examined. It has been found that the activation energy of electronic conduction is closely related to the average atomization energy of these materials.     

Nanophase separation and effects on properties of Ge–As–Se chalcogenide glasses

Nanophase separation in the bulk Ge–As–Se chalcogenide glasses was observed by SEM and supported by XRD and IR measurements. Effects of nanophase separation on glass transition temperature (T_g), microhardness (H_v), optical band gap (E_opt) and thermal expansion coefficient (α) were investigated in terms of glass rigidity transitions. According to the correlations between the properties and average coordination number Z, it is established that nanophase separation becomes more intensive when Z is larger than 2.64.     

Excited state absorption and up-conversion luminescence of Ho3+ centres in 3CaO–Ga2O3–3GeO2 glass

3CaO–Ga₂O₃–3GeO₂ glass excited state absorption spectra-activated with Ho³⁺ (Ho₂O₃ – 0.7 wt% content) have been measured and analysed. Up-converted emission channels have been identified and the predicted up-converted emission bands have been registered under Ar ion laser (λ = 488 nm) excitation according to the excited state absorption data. A mechanism of up-converted transitions for Ho³⁺ centres in this prototype glass network is proposed on the basis of the obtained results.     

Preparation and third-order optical nonlinearity of glass ceramics based on GeS2–Ga2S3–CsCl pseudo-ternary system

Chalcohalide glass-ceramics based on GeS₂–Ga₂S₃–CsCl pseudo-ternary system were prepared by heat treatment method. X-ray diffraction and scanning electron microscope studies confirmed the formations of Ga₂S₃ and GeS₂ phase grains with sizes of 2–5 and 80 nm, respectively. Z-scan technology was employed to investigate the third-order nonlinear optical characteristics of both precursor glass and its glass ceramics at 800 nm. The results show that nonlinear refractive index n₂ as well as nonlinear absorption coefficient β increase after heat treatment, which is due to quantum effects, and the largest n₂ of the glass ceramics is 4.3 × 10^? 11 esu which is 4 times larger than that of the host.     

Spectral investigations on VO2+ ion doped in CaO–SrO–Na2O–B2O3 glass systems

Glasses of the (20 ? x)CaO–xSrO–(20 ? y)Na₂O–60B₂O₃ ? y (CSNB) system with (5 ≤ x ≤ 15) mol% and y = 0.1 mol% of V₂O₅ were characterized by X-ray diffraction (XRD), EPR (Electron Paramagnetic Resonance), Optical absorption Spectra and FT-IR (Fourier transform Infrared Spectroscopy) studies. EPR spectra of all the glass samples exhibit resonance signals characterstic of VO²⁺ ions. The values of spin-Hamiltonian parameters indicate that the VO²⁺ ions in CSNB glasses were present in octahedral sites with tetragonal compression and belong to C_4v symmetry. Spin-Hamiltonian parameters ‘g’ and ‘A’ were evaluated. The Optical band energy (E_opt) and Urbach energy (ΔE) were calculated from their ultra violet edges. By correlating EPR and Optical data the molecular orbital coefficients have been evaluated. IR spectra of these glasses were analyzed in order to identify the contribution of each component to the local structure that determines the physical properties of these glasses.     

Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60 −xSex glass network

In this paper, a detailed study to examine the influence of chalcogen S/Se mole % in the Ge₂₈Sb₁₂S_60 ?xSe_x glass system, with x = 0, 15, 30, 45 and 60, is presented that provides insight into the effect of chalcogen content on the glass network and properties. Specifically, we report results of a systematic study to evaluate the relationship between compositional variation, glass properties and dominant bonding configurations. These materials are important to applications in optics manufacturing where correlation of physical and optical properties is required to predict fabrication behavior and ultimate material performance. It has been found that the dominant bonds in the glass system change upon reaching a specific molar ratio (percentage, %) of chalcogen substitution, between 30 < x < 45 mol%, changing from Ge―Se to Sb―Se bonds as the dominant bond type. This singularity has been observed using micro-Raman spectroscopy and X-ray photoelectron spectroscopy. This effect of the dominant bond configurational change was also shown to impart changes in important physical properties including micro-hardness, thermal properties, and the glass' viscometric behavior. Results indicate that the observed dominant bond change was responsible for a constant value in the evolution of both the micro-hardness and calorimetric glass transition temperature. The viscosity was also affected by the change in dominant bond type, breaking the monotony of the viscosity evolution during the S substitution, due to the total strength of the vitreous system which does not linearly increase.     

Preparation and properties of chalcogenide glasses in the GeS2–Sb2S3–CdS system

In searching for new kind of photoelectric material, chalcogenide glasses in the GeS₂–Sb₂S₃–CdS system have been studied and their glass-forming region was determined. The system has a relatively large glass-forming region that is mainly situated along the GeS₂–Sb₂S₃ binary side. Thermal, optical and mechanical properties of the glasses were reported and the effects of compositional change on their properties are discussed. These novel chalcogenide glasses have relatively high glass transition temperatures (T_g ranges from 566 to 583 K), good thermal stabilities (the maximum of deference between the onset crystallization temperature, T_c, and T_g is 105 K), broad transmission region (0.57–12 μm) and large densities (d ranges from 2.99 to 3.34 g cm^?3). These glasses would be expected to be used in the field of rare earth doped fiber amplifiers and nonlinear optical devices.     

Formation of Co2+-doped nanocrystals in La2O3–MgO–Al2O3–SiO2 glass-ceramics

Transparent glass-ceramics were synthesized by heat-treatment of glass with a composition of 5La₂O₃–13.2MgO–28.8Al₂O₃–46SiO₂–4.5TiO₂–2.5ZrO₂–0.15CoO (LMAS) (wt.%). The activation energy of crystallization and the Avrami parameter for the LMAS glass were determined from the DTA curves at different heating rates. The most two intense bands of Raman spectrum of initial glass at ~ 810 cm^?1 and ~ 900 cm^?1 were connected with the presence of [SiO₄] and [TiO₄] tetrahedral, respectively. After heat-treated at 700 °C/10 h+820 °C/8 h, the intensity of the band for [TiO₄] tetrahedral weakened, while an intensive band at ~ 800 cm^?1 for the Ti–O bond appeared. Other bands were characteristics of high-silicate network and x(MgTi₂O₅)·y(Al₂TiO₅) polycrystals. The changes reflected phase separation after heat-treatment of the initial glass. The strong absorption band of glass-ceramics centered at 580 nm can be assigned to ⁴A₂(⁴F)→⁴T₁(⁴P) and the broad absorption band at 1100–1700 nm to ⁴A₂(⁴F)→⁴T₁(⁴F) transitions of tetrahedral coordinated Co²⁺ ion. Two broad emission bands, one was around 660 nm, the other was from 800 nm to 1050 nm, of glass-ceramics correspond to the ⁴T₁(⁴P)→⁴A₂(⁴F) and ⁴T₁(⁴P)→⁴T₂(⁴F) transitions of tetrahedral coordinated Co²⁺ ions. The absorption and emission features clearly demonstrated that Co²⁺ ions were incorporated into nanocrystals and located in tetrahedral sites.     

The effect of composition and temperature on the amount and type of nanoferrite particles inserted in Fe2O3–ZnO–MgO–SiO2 glass–ceramics

Glass–ceramics with the composition 2Fe₂O₃.1ZnO.1MgO.96SiO₂ [4ZnMgFe] and 2Fe₂O₃.2ZnO.3MgO.93SiO₂ [7ZnMgFe] (mol%) were prepared using the sol–gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM), electron diffraction (ED) and Mössbauer spectroscopy (MS) were used to investigate the glass–ceramics structure. The samples contain ferrite nanoparticles embedded in a glass matrix. However, zinc ferrite nanoparticles seems to be the preferential crystalline phase formed. The amount of ferrite particles depends on treatment temperature and sample composition. The Mössbauer spectroscopy measurements show that ferrite nanoparticles can exhibit a ferrimagnetic behaviour combined with superparamagnetism.     

Crystallization of bismuth oxide nano-crystallites in a SiO2–PbO–Bi2O3 glass matrix

SiO₂–PbO–Bi₂O₃ glasses having the composition of 35SiO₂–xPbO–(65 ? x)Bi₂O₃ (where x = 5, 20 and 45; in mol%) have been prepared using the conventional melting and annealing method. Differential scanning calorimetry (DSC) was employed to characterize the thermal behavior of the prepared glasses in order to determine their crystallization temperatures (T_cr). It has been found that T_cr decreases with the decrease of Bi₂O₃ content. The amorphous nature of the prepared glasses as well as the crystallinity of the produced glass–ceramics were confirmed by X-ray powder diffraction (XRD) analysis. SiPbBi₂O₆ glass nano-composites, comprising bismuth oxides nano-crystallites, were obtained by controlled heat-treatment of the glasses at their (T_cr) for 10 h. Transmission electron microscopy (TEM) of the glass nano-crystal composites demonstrates the presence of cubic Bi₂O₃ nano-crystallites in the SiPbBi₂O₆ glass matrix. Nano-crystallites mean size has been determined from XRD line width analysis using Scherrer's equation as well as from TEM; and the sizes obtained from both analyses are in good agreement. These sizes varied from about 15 to 170 nm depending on the chemical compositions of parent glasses and, consequently, their structure. Interestingly, replacement of the Bi₂O₃ by PbO in the glass compositions has pronounced effect on the nature, morphology and size of the formed nano-crystallites. Decrease of the Bi₂O₃ content increases the size of the nano-crystallites, and at the lowest Bi₂O₃ extreme, namely 20 mol%, introduces minority of the monoclinic Bi₂O₄ in addition to the cubic Bi₂O₃. The crystallization mechanism is suggested to involve a diffusion controlled growth of the bismuth oxide nano-crystallites in the SiPbBi₂O₆ glass matrix with the zero nucleation rate.     

Optical spectroscopy and local structure of Er3+ luminescence centres in СaO–Ga2O3–GeO2 glasses

Optical absorption, luminescence excitation and emission spectra of Er³⁺ centres in Ca₃Ga₂Ge₃O₁₂:Er glass with Er content of 1.46 wt% are presented and analysed. Luminescence kinetics for the main Er³⁺ transitions was satisfactorily described by single exponential decays with characteristic lifetimes. Oscillator strengths, phenomenological Judd–Ofelt intensity parameters, radiative decay rates (emission probabilities of transitions), branching ratios and radiative lifetimes for Er³⁺ centres in Ca₃Ga₂Ge₃O₁₂:Er glass are calculated and compared with the corresponding parameters of the Ca₃Sc₂Ge₃O₁₂:Er³⁺ garnet and other crystals and glasses. Quantum efficiency, η, of the ⁴I_13/2 → ⁴I_15/2 Er³⁺ transition is determined. Incorporation peculiarities and local structure of Er³⁺ luminescence centres in Ca₃Ga₂Ge₃O₁₂:Er³⁺ glass are discussed in comparison with garnet crystals and oxide glasses. On the basis of the presented results and referenced EXAFS data for Er, Eu and Ho impurities (L₃-edge) it has been shown that Er³⁺ centres in Ca₃Ga₂Ge₃O₁₂ glass occupy network sites with the coordination number to oxygen of N = 6.