a-C:H膜化学结构对光学性能的影响

选用体积分数为99.999 9%的H2及反式-2-丁烯(T2B)为工作气体,利用低压等离子体增强化学气相沉积法制备了a-C;H薄膜.利用傅里叶变换红外光谱仪和X射线光电子能谱对薄膜化学键和电子结构进行分析,并结合高斯分峰拟合分析了薄膜中sp3/sp2杂化键比值和sp3C杂化键分数.结果表明:薄膜中氢含量较高,主要以sp3C-H形式存在;工作气压越高,制备的薄膜中C=C键含量越少,薄膜中sp3/sp2杂化键比值和sp3C杂化键分数增加,薄膜稳定性提高.应用UV-VIS光谱仪,获得了波长在400～1 000 nm范围内薄膜的光吸收特性,结果显示:a-C:H薄膜透过率可达98%.光学常数公式计算得到工作压强为4～14 Pa时光学带隙在2.66～2.76之间,并均随着工作气压的升高而增大.结果表明,随工作气压的升高,薄膜内sp3键减小,从而促使透过率、光学带隙增大.     

工作压强对空心玻璃微球表面形貌和性能的影响

采用化学气相沉积-氧化烧结法,在不同工作压强条件下,制备了惯性约束聚变靶用空心玻璃微球（HGM）。利用扫描电子显微镜、原子力显微镜、VMR显微镜系统和能谱仪对HGM的表面形貌、球形度、壁厚均匀性以及成分进行了表征。分析了工作压强对HGM表面形貌、球形度、壁厚均匀性和成分的影响以及相互关系。研究表明：HGM的表面形貌随工作压强的增大而变得平滑致密,表面均方根粗糙度逐渐减小。随工作压强增大,HGM的球形度没有发生明显变化,而壁厚均匀性得到不断提高,微球中C元素浓度逐渐降低,Si元素浓度不断升高,O元素浓度基本保持不变。     

a-C:H薄膜的光致发光

利用射频辉光放电法沉积a-C:H薄膜,研究不同测量温度、不同退火温度光致发光光谱的变化,以及光致发光光谱随光子能量的变化,实验表明:随着测量温度的升高发光效率降低,用非晶碳网络的二相系统模型对这些结果作了解释。另外,光致发光光谱也随着激发光能量的不同而变化,当激发光能量接近光学带隙E_opt时,发光强度最高。 关键词：     

脉冲敲击技术对PI微球表面粗糙度的影响

作为点火靶重要候选靶丸之一, 聚酰亚胺 (PI) 空心微球采用降解芯轴技术结合双单体气相沉积聚合法 (VDP) 制备. 在PI涂层过程中微球碰撞对表面质量影响较大, 为了减小碰撞提高表面质量, 选用筛网盘做样品盘, 激励方式由压电振动模式改为脉冲敲击模式进行对比. 实验数据表明微球运动过程中碰撞是引起表面质量变差的原因, 通过理论分析确认了筛网盘通过减少接触点可以减少微球与微球间、微球与样品盘间的碰撞, 并且将压电振动改为脉冲敲击模式可以减小微球碰撞次数. 脉冲敲击模式与压电振动模式相比, 其可控性、微球弹跳幅度、消除静电等方面均优于压电振动. 对于微球壁厚均匀性而言, 压电振动略好于脉冲敲击, 但相差较小. 单个微球的壁厚最大偏差前者为0.68 μm, 优于后者的0.73 μm; 单个微球壁厚平均值在同一批次内的最大起伏, 前者为0.26 μm, 优于后者0.57 μm. 白光干涉仪数据显示脉冲敲击起到了提高微球表面质量的作用, 其表面粗糙度Rq值由52–93 nm 减小到28–44 nm. 关键词： 脉冲敲击技术 聚酰亚胺靶丸 表面粗糙度 壁厚均匀性     

搅拌法制备聚合物微球中油水相对壁厚的影响

为了研究乳液微封装技术中油水相对微球壁厚的影响,推导了在理想状态下微球壁厚、油相质量分数和油水相比这三者之间的函数关系。结果表明:当内相水滴半径和油相质量分数为常数时,微球壁厚是油水相比的单增函数;而当内相水滴半径和油水相比为常数时,微球壁厚是油相质量分数的单增函数。即提高油相质量分数或增大油水相比对增加壁厚而言具有等效性。根据此规律,在搅拌法制备小直径聚苯乙烯微球中,通过调整油水相的各参数,确定了制备小直径厚壁聚苯乙烯微球的关键工艺参数。实验表明:采用搅拌法制备10~25 m壁厚的小直径聚苯乙烯微球时,油相质量分数宜配制为5.3%~7.0%,油水相比宜控制在1.6~2.2之间,而外水相中聚乙烯醇质量分数宜控制在1%~3%之内。     

建筑节能薄膜的设计与制备

对介质－金属组合的建筑节能薄膜进行了理论设计，给出双导和三层膜的理论参数，用计算机模拟了大面积薄膜的膜厚均匀性分布，获得了最佳的蒸发源配置，实验上达到了满足实际使用的均匀性要求，最后给出了实际样品的光谱特性。     

搅拌法制备聚合物微球中油水相对壁厚的影响

为了研究乳液微封装技术中油水相对微球壁厚的影响,推导了在理想状态下微球壁厚、油相质量分数和油水相比这三者之间的函数关系。结果表明：当内相水滴半径和油相质量分数为常数时,微球壁厚是油水相比的单增函数;而当内相水滴半径和油水相比为常数时,微球壁厚是油相质量分数的单增函数。即提高油相质量分数或增大油水相比对增加壁厚而言具有等效性。根据此规律,在搅拌法制备小直径聚苯乙烯微球中,通过调整油水相的各参数,确定了制备小直径厚壁聚苯乙烯微球的关键工艺参数。实验表明:采用搅拌法制备10~25 m壁厚的小直径聚苯乙烯微球时,油相质量分数宜配制为5.3%~7.0%,油水相比宜控制在1.6~2.2之间,而外水相中聚乙烯醇质量分数宜控制在1%~3%之内。     

a-C:N:H纳米尖端荧光产生的机理

用CH4,H2和NH3为反应气体,利用等离子体增强热丝化学气相沉积在沉积有碳膜的Si衬底上制备了a-C:N:H纳米尖端,并用扫描电子显微镜和微区Raman光谱仪对碳膜和纳米尖端进行了表征。结果表明:Raman谱中含有与碳和氮相关的峰,且纳米尖端的Raman谱比碳膜的Raman谱有很强的荧光背景。Raman谱中的峰说明沉积的碳膜和纳米尖端是a-C:N:H薄膜和a-C:N:H尖端。a-C:N:H纳米尖端的Raman谱中强荧光背景的产生表明其在激发光源照射的过程中发射了强荧光,对a-C:N:H纳米尖端产生强荧光的机理进行了探讨。     

厚壁空心微球的球形度和壁厚均匀性的表征研究

为建立高效简洁的厚壁空心微球球形度和壁厚均匀性的表征和测量方法,以内径850μm、壁厚25μm的厚壁聚苯乙烯(PS)微球为测量对象,分析球形度和壁厚均匀性的表征方法,探讨测量过程中采样方式对表征微球球形度和壁厚均匀性的影响。研究表明:对于批量微球球形度和壁厚均匀性的表征,当抽样数目不小于30时,测量结果之间的差异很小;而对于单一微球的球形度和壁厚均匀性的表征,至少3个不同投影面的测量结果的平均值才趋于稳定。不同投影面导致球形度或壁厚均匀性较差的批次样品的测量结果有一定差异,多次投影测量可提高测量结果的可靠性。     

厚壁空心微球的球形度和壁厚均匀性的表征研究

为建立高效简洁的厚壁空心微球球形度和壁厚均匀性的表征和测量方法,以内径850 m、壁厚25 m的厚壁聚苯乙烯（PS）微球为测量对象,分析球形度和壁厚均匀性的表征方法,探讨测量过程中采样方式对表征微球球形度和壁厚均匀性的影响。研究表明：对于批量微球球形度和壁厚均匀性的表征,当抽样数目不小于30时,测量结果之间的差异很小;而对于单一微球的球形度和壁厚均匀性的表征,至少3个不同投影面的测量结果的平均值才趋于稳定。不同投影面导致球形度或壁厚均匀性较差的批次样品的测量结果有一定差异,多次投影测量可提高测量结果的可靠性。     

Superhard nanocomposite nc-TiC/a-C:H film fabricated by filtered cathodic vacuum arc technique

Superhard nanocomposite nc-TiC/a-C:H films, with an excellent combination of high elastic recovery, low friction coefficient and good H/E ratio, were prepared by filtered cathodic vacuum arc technique using the C₂H₂ gas as the precursor. The effect of C₂H₂ flow rate on the microstructure, phase composition, mechanical and tribological properties of nanocomposite nc-TiC/a-C:H films have been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy disperse spectroscopy (EDS), microindentation and tribotester measurements. It was observed that the C₂H₂ flow rate significantly affected the Ti content and hardness of films. Furthermore, by selecting the proper value for C₂H₂ flow rate, 20 sccm, one can deposit the nanocomposite film nc-TiC/a-C:H with excellent properties such as superhardness (66.4 GPa), high elastic recovery (83.3%) and high H/E ratio (0.13).     

Nanocomposite TiC/a-C：H film prepared on titanium aluminium alloy substrates by PSII assistant MW-ECRCVD

Thin films of titanium carbide and amorphous hydrogenated carbon have been synthesized on titanium aluminium alloy substrates by PSII assisted MW-ECRCVD with a mirror field. The microstructure, chemical composition and mechanical property were investigated. Using XPS and TEM, the films were identified to be a-C：H film containing TiC nanometre grains （namely, the so-called nanocomposite structure）. The size of TiC grains of nanocomposite TiC/DLC film is about 5 nm. The nanocomposite structure has obvious improvement in the mechanical properties of DLC film. The hardness of a-C：H film with Ti is enhanced to 34 G Pa~ while that of a-C：H film without Ti is about 12 G Pa, and the coherent strength is also obviously enhanced at the critical load of about 35N.     

Electrochemical corrosion behaviors of a-C:H and a-C:NX:H films

The a-C:H and a-C:N_X:H films were deposited onto silicon wafers using radio frequency (rf) plasma enhanced chemical vapor deposition (PECVD) and pulsed-dc glow discharge plasma CVD, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterize chemical nature and bond types of the films. The results demonstrated that the a-C:H film prepared by rf-CVD (rf C:H) has lower I_D/I_G ratio, indicating smaller sp² cluster size in an amorphous carbon matrix. The nitrogen concentrations of 2.9 at.% and 7.9 at.% correspond to carbon nitride films prepared with rf and pulse power, respectively.Electrochemical corrosion performances of the carbon films were investigated by potentiodynamic polarization test. The electrolyte used in this work was a 0.89% NaCl solution. The corrosion test showed that the rf C:H film exhibited excellent anti-corrosion performance with a corrosion rate of 2 nA cm⁻², while the carbon nitride films prepared by rf technique and pulse technique showed a corrosion rate of 6 nA cm⁻² and 235 nA cm⁻², respectively. It is reasonable to conclude that the smaller sp² cluster size of rf C:H film restrained the electron transfer velocity and then avoids detriment from the exchange of electrons.     

氢化非晶碳薄膜瞬态复合发光特性

本文介绍了对辉光放电法制备的氢化非晶碳薄膜的时间分辨瞬态光致复合发光衰减的研究,分析了它对沉积温度、发射能量和激发能量的依赖关系,结果表明非晶碳薄膜复合发光行为符合定域激子复合机制,氢含量改变所导致的材料缺陷密度和无序度变化影响了样品复合发光行为.     

Deposition of a-C:H films on UHMWPE substrate and its wear-resistance

In prosthetic hip replacements, ultrahigh molecular weight polyethylene (UHMWPE) wear debris is identified as the main factor limiting the lifetime of the artificial joints. Especially UHMWPE debris from the joint can induce tissue reactions and bone resorption that may lead to the joint loosening. The diamond like carbon (DLC) film has attracted a great deal of interest in recent years mainly because of its excellent tribological property, biocompatibility and chemically inert property. In order to improve the wear-resistance of UHMWPE, a-C:H films were deposited on UHMWPE substrate by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-PECVD) technology. During deposition, the working gases were argon and acetylene, the microwave power was set to 800 W, the biased pulsed voltage was set to −200 V (frequency 15 kHz, duty ratio 20%), the pressure in vacuum chamber was set to 0.5 Pa, and the process time was 60 min. The films were analysed by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nano-indentation, anti-scratch and wear test. The results showed that a typical amorphous hydrogenated carbon (a-C:H) film was successfully deposited on UHMWPE with thickness up to 2 μm. The nano-hardness of the UHMWPE coated with a-C:H films, measured at an applied load of 200 μN, was increased from 10 MPa (untreated UHMWPE) to 139 MPa. The wear test was carried out using a ball (Ø 6 mm, SiC) on disk tribometer with an applied load of 1 N for 10000 cycles, and the results showed a reduction of worn cross-sectional area from 193 μm² of untreated UHMWPE to 26 μm² of DLC coated sample. In addition the influence of argon/acetylene gas flow ratio on the growth of a-C:H films was studied.     

Rare earth Ce-modified (Ti,Ce)/a-C:H carbon-based film on WC cemented carbide substrate

WC cemented carbide suffers severe wear in water environments. A novel carbon-based film could be a feasible way to overcome this drawback. In this study, a rare earth Ce-modified(Ti,Ce)/a-C:H carbon-based film is successfully prepared on WC cemented carbide using a DC reactive magnetron sputtering process. The microstructure, mechanical properties,and tribological behavior of the as-prepared carbon-based film are systematically investigated. The results show that the doping Ti forms Ti C nanocrystallites that are uniformly dispersed in the amorphous carbon matrix, whereas the doping Ce forms CeO_2 that exists with the amorphous phase in the co-doped(Ti,Ce)/a-C:H carbon-based film. The mechanical properties of this(Ti,Ce)/a-C:H film exhibit remarkable improvements, which could suggest higher hardness and elastic modulus as well as better adhesive strength compared to solitary Ti-doped Ti/a-C:H film. In particular, the as-prepared(Ti,Ce)/a-C:H film presents a relatively low friction coefficient and wear rate in both ambient air and deionized water,indicating that(Ti,Ce)/a-C:H film could feasibly improve the tribological performance of WC cemented carbide in a water environment.     

Raman spectroscopy of a-C:H:N films deposited using ECR-CVD with mixed gas

Ultraviolet (UV) and visible Raman spectroscopy were used to study a-C:H:N films deposited using ECR-CVD with a mixed gas of CH₄ and N₂. Small percentage of nitrogen from 0 to 15% is selected. Raman spectra show that CN bonds can be directly observed at 2220 cm⁻¹ from the spectra of visible and UV Raman. UV Raman enhances the sp¹ CN peak than visible Raman. In addition, the UV Raman spectra can reveal the presence of the sp³ sites. For a direct correlation of the Raman parameter with the N content, we introduced the G peak dispersion by combining the visible and UV Raman. The G peak dispersion is directly relative to the disorder of the sp² sites. It shows the a-C:H:N films with higher N content will induce more ordered sp² sites. In addition, upper shift of T position at 244 nm excitation with the high N content shows the increment of sp² fraction of films. That means the films with high N content will become soft and contain less internal stress. Hardness test of films also confirmed that more N content is with less hardness.     

A magnetron sputtering technique to prepare a-C:H films: Effect of substrate bias

Amorphous hydrogenated carbon (a-C:H) films were deposited by magnetron sputtering with a mixture gas of Ar and CH₄. The a-C:H films deposited by this method have relatively low internal stress (<1 GPa) compared to some films deposited by conventional deposition process. The effects of substrate bias voltage on microstructure, surface morphology and mechanical properties of the films were investigated by various techniques. It has been found that the polymer-like structure is dominated at low bias voltage (−100 V), while the diamond-like structure with the highest hardness and internal stress is the main feature of the a-C:H films deposited under high bias voltage (−300 V). With increasing the bias voltage further, the feature of diamond-like structure decreases associating with the increase of graphitization. The frictional test shows that the friction coefficient and wear rate of the a-C:H films are depended strongly on structure and mechanical properties, which were ultimately influenced by the deposition method and bias voltage.     

Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor deposition

a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH₄ and a mixture of C₂H₂ + H₂, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH₄, the G peak position around 1520 cm⁻¹ and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp³ fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C₂H₂ + H₂, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH₄ increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C₂H₂ + H₂ with increasing bias voltage is observed.