高效率掺Tm~(3+)双包层光纤及光纤激光器的研制

掺Tm3+光纤激光器有着广泛的应用前景,而掺Tm3+光纤是其核心与关键.本文采用改进的化学汽相沉积(MCVD)工艺和气相液相复合掺杂技术,在MCVD机车上实现了掺Tm3+石英光纤预制棒的制备,并制备了掺Tm3+石英双包层光纤(芯包比为10/125).利用上述光纤搭建直腔型全光纤激光器,在波长为793nm的LD抽运下,获得激光光谱中心波长为2002 nm,最大的激光输出功率30.7 W,光纤斜率效率为59.32%.     

掺杂纳米材料光纤的研制

将纳米技术与光纤技术相结合,利用改进的化学气相沉积法(MCVD)制作纳米级InP薄膜内包层光纤及在普通单模光纤纤芯中掺杂纳米级InP粒子的新型光纤,前者单位长度放大系数最大达到15.35dB/m,能在较短的长度上对信号光起到放大作用,便于集成化;后者经实验证实其纤芯具有光波导传输性能.两种新型高非线性光纤在光通信器件中的具有应用前景.     

竖直生长有机单晶微米线的制备及其光波导性能

利用物理气相沉积法来制备有机微米线,并根据气相沉积中基底表面对材料的成核与生长动力学的影响规律,通过对基底表面的亲水处理,来控制微米线的成核过程,从而实现了微米线有序阵列的制备,进而研究了垂直微米线的光波导性能。与水平生长的微米线相比,垂直生长的微米线波导性能更高,光损耗小,损耗系数R为0.029 dBμm~(-1),明显低于平躺的微米线(R=0.033 dBμm~(-1))。     

两种不同制备方法的多壁碳纳米管光学性质的对比

分别采用化学气相沉积法和电弧放电法制备了多壁碳纳米管.利用扫描电镜测量了两种不同方法所制备样品的形貌,并在室温下测量了这两种样品的喇曼光谱、吸收光谱和光致发光光谱.结果显示:电弧法所制的纳米管管径较小,且纳米管相互缠绕明显;两种样品的喇曼光谱中均存在D模和G模,但化学气相沉积法制备的碳管的结构更完美,石墨化程度和碳管纯度更高;两种样品都在250 nm处有一个强的吸收峰,当采用共振激发时,两种样品均在480 nm处有带状发射光谱,而用550 nm的光激发时,化学气相沉积法制备的多壁碳纳米管在820 nm处具有光致发光,电弧法制备的样品在此波段则无光致发光.     

微波等离子体化学气相沉积法制备C3N4薄膜的结构研究

采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C₃N₄薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C₃N₄和α-C₃N₄组成,并且这些结果与α-C₃N₄相符合较好.由虎克定律近似关 关键词： 3N₄')" href="#">C₃N₄ 微波等离子体化学气相沉积法 薄膜沉积     

气体滞留时间对高速沉积的微晶硅薄膜性能的影响分析

实现高速沉积对于薄膜微晶硅太阳电池产业化降低成本是一个重要手段.采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术，实现了微晶硅硅薄膜的高速沉积，并通过改变气体总流量改变气体滞留时间，考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响.采用沉积速率达到12?/s的高速微晶硅工艺制备微晶硅电池，电池效率达到了5.3％. 关键词： 气体滞留时间 高速沉积 微晶硅 超高频等离子体增强化学气相沉积     

掺镱石英光纤预制棒的制备与表征

采用改进化学汽相沉积结合溶液掺杂法制备了掺镱石英光纤预制棒,并研究了不同镱掺杂浓度下的吸收光谱和发光光谱.吸收光谱和发光光谱的强度随着YbCl3溶液浓度的增大而增强.在不产生失透的前提下,得到预制棒芯层能够掺杂的YbCl3溶液最大浓度为0.057mol/L.     

采用CVD异位退火和双温区HPCVD工艺制备MgB_2/B/MgB_2多层膜北大核心CSCD

介绍了采用了MgB2薄膜的化学气相沉积(CVD)异位退火和双温区混合物理化学气相沉积(HPCVD)制备技术,并以B膜作为势垒层在多晶的Al2O3基底上制作了三明治结构的MgB2/B/MgB2多层膜.采用扫描电子显微镜(SEM)、X射线衍射(XRD)和标准四线法对制备的MgB2/B/MgB2多层膜的断面结构、超导薄膜晶体结构及超导特性进行了测量研究.结果表明,制备的MgB2/B/MgB2多层膜结构清晰,底层和顶层超导薄膜显示出良好的超导特性.     

CHBr薄膜制备的初步研究

碳氢（cH）及其掺杂材料常被用作ICF实验靶丸烧蚀层材料。制备CH薄膜及其掺杂材料的方法有很多，诸如：离子束辅助沉积、离子溅射沉积、低压等离子体化学气相沉积（LPPCVD）等。近年来，详细研究了LPPCVD法制备CH薄膜的制备方法与工艺，形成了比较成熟的技术路线与工艺路线，并为“神光”实验提供了一系列实验靶丸。     

超细低水峰抗弯损光纤的设计及制作

采用全合成预制棒制造法（VAD＋OVD）和改进的G.652.D光纤拉制法制造光纤.研究了工艺中光纤芯径的大小、第一包层的厚度、芯包折射率差、芯包比等参量与光纤弯曲性能的关系,并据此制作了几种超细低水峰抗弯损光纤.该光纤的裸光纤直径约80 μm,涂覆后成品光纤直径约140 μm,当弯曲半径不小于7.5 mm时,能够在1 260～1 625 nm整个波段内满足DWMD的传输要求.     

负色散斜率的色散补偿光纤的研制

对三包层的大负色散、负色散斜率的色散补偿光纤进行了理论研究，分析了各个参量对色散曲线的调节作用，发现色散补偿光纤只有在一定范围的拉丝芯径内，以牺牲负色散数值才能大负色散斜率，采用在光纤拉丝时旋转预制棒的工艺减小了光纤的偏振模色散进一步改进国内已有的的改进的化学汽相沉积（ＭＣＶＤ）光纤生产工艺，研制出了较高水平的色散补偿光纤。     

Fine glass particle-deposition mechanism in the VAD process

Abstract

In order to achieve a high fiber preform production rate, the deposition mechanism in the VAD process has been investigated. The particle-deposition rate was found to depend largely on the Reynolds number value in the flame stream. Based on the flame stream Schlieren observation results, this Reynolds number relationship to the deposition rate can be explained in terms of two fine glass particle-diffusion effects: One is molecular diffusion and the other is eddy diffusion. Finally, by applying such particle-diffusion effects to the actual VAD process, a 4.5 gr/min preform production rate was attained.     

Simultaneous Compensation of Dispersion and Losses using Er-Doped Double-Core Optical Fiber

The Er-doped double-core dispersion compensating fiber (EDDCF) has been fabricated using modified chemical vapor deposition (MCVD) technique. We have obtained 14 dB gain at 1550 nm (using a diode laser of 980 nm wavelength which provides 100 mW of pump power) with dispersion of about −165 ps/km nm. It is useful for the optical fiber network where amplification as well as negative dispersion is necessary. We are the first to report the experimental realization and characterization of the EDDCF.     

Axial refractive index depression in preforms and fibers

The refractive index depression that exists along the axis in modified chemical vapor deposited (MCVD) preforms and fibers doped mainly with GeO₂ or P₂O₅ is studied by interference microscopy. The index profile of a preform, determined as a function of its transition from the uncollapsed to the fully collapsed state, shows that this central region is fully depleted of dopant and has an index value corresponding to that of the pure fused silica cladding. The same results are found in samples taken from six preform tips and from a relatively large fiber, indicating that this effect is a general property of an uncompensated fabrication process. Implications for its influence on the fiber's transmission properties are discussed.     

Fabrication and characteristics of silica optical fiber doped with InP nano-semiconductor material

We fabricated a novel special silica optical fiber doped with nano-semiconductor material InP in double cladding layers by using conventional modified chemical vapor deposition (MCVD) process. During the deposition process, InP powder was placed at the entrance of silica substrate tube and vaporized by high temperature. With the help of nitrogen gas flow, the vaporized InP was carried into silica substrate tube and deposited on the inner surface in the form of nano-particle. The physical structure and amplification characteristics of the special fiber were investigated. From the refractive index distribution of the preform, we can observe obvious increase in inner cladding index, which attributes to InP dopant. By using 532 nm LD as pump, a broadband amplified spontaneous emission (ASE) was demonstrated in the wavelength range from 1,080 to 1,350 nm. The proposed nano- semiconductor doped fiber with optical amplification is expected to a wide application in optical fiber communications.     

Multiple Soaking with Different Solution Concentration in Doped Silica Preform Fabrication Using Modified Chemical Vapor Deposition and Solution Doping

Abstract

Incorporation of alumina (Al₂O₃) into a silica matrix by modified chemical vapor deposition and a solution doping technique is investigated in this study. Multiple soaking cycles were used to increase the aluminum content in the core layer. The effect of alumina retention in silica matrix soot is focused by multiple cycles of soaking with different solution concentrations, while the effect of the adsorption mechanism is fixed by maintaining the soot deposition process (such as temperature [1,800°C], precursor, total gas flow, and soaking time). The deposited soot is examined for porosity characteristics and effective surface area by a gas adsorption technique with Brunauer–Emett–Teller surface area analysis and the surface and cross-section morphology using scanning electron microscopy. Three different concentrations are used in this work (0.3, 0.7, and 1.2 M) with multiple cycles of soaking. Sintering and the collapsing process is controlled for each preform. The result shows that the alumina content is increased substantially as the number of soaking processes is increased, which may be due to the retention effect as only a small amount of adsorption process takes place as indicated by the slight decrease in the surface area of soot. The collapsed preforms are analyzed using a preform analyzer. Energy dispersive x-ray spectrometry is used to check aluminum content and distribution into the core layer.     

Fine glass particle-deposition mechanism in the VAD process

In order to achieve a high fiber preform production rate, the deposition mechanism in the VAD process has been investigated. The particle-deposition rate was found to depend largely on the Reynolds number value in the flame stream. Based on the flame stream Schlieren observation results, this Reynolds number relationship to the deposition rate can be explained in terms of two fine glass particle-diffusion effects: One is molecular diffusion and the other is eddy diffusion. Finally, by applying such particle-diffusion effects to the actual VAD process, a 4.5 gr/min preform production rate was attained.     

Al2O3衬底MgB2超薄膜的研究

我们利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)在(000l)Al2O3衬底上制备了系列干净的MgB2超薄膜,并通过R-T测量、SEM测量、M-T测量、XRD测量对它们进行了表征,探究了其超导电磁性能和薄膜的生长机制.其中的7.5nm厚的MgB2超薄膜为已报导的蓝宝石衬底上生长的性能最高的超薄膜.     

An integrated Mach–Zehnder interferometric biosensor with a silicon oxynitride waveguide by plasma-enhanced chemical vapor deposition

We report the design and fabrication of an integrated Mach–Zehnder interferometric (MZI) biochip based on silicon oxynitride layers deposited with a plasma-enhanced chemical vapor deposition (PECVD) process. A rib waveguide for an integrated MZI sensor has been designed to have a high surface sensitivity and a single-mode behavior by using an effective index method. The integrated MZI chip operating at 637 nm is fabricated via conventional photolithography and reactive ion etching. As a biosensor application, the real-time and label-free detection of the covalent immobilization and hybridization of DNA strands is performed and verified with this device.     

Photosensitivity and photoluminescence of Sn/Yb codoped silica optical fiber preform

Sn/Yb codoped silica optical fiber preform is prepared by the modified chemical vapor deposition （MCVD） followed by the solution-doping method. Ultraviolet （UV） optical absorption, photoluminescence （PL） spectra under 978-nm laser diode （LD） pumping, and refractive index change after exposure to 266-nm laser pulses are obtained. There is only a little change in the PL spectra while a positive refractive index change up to 2×10^-4 is observed after 30-min exposure to 266-nm laser pulses. The results show that both of the peculiar photosensitivity of Smdoped silica and the gain property of Yb-doped silica fiber are preserved in the Sn/Yb codoped silica optical fiber preform. The experimental data suggest that the photosensitivity of the fiber preform under high energy density laser irradiation should be mainly due to the bond-breaking of oxygen deficient defects, while under relatively low energy density laser irradiation, the refractive index change probably originates from the photoconversion of optically active defects.