具有态守恒赝隙的光子晶体中两能级原子自发辐射的增强与抑制

论证了在赝带隙光子晶体中存在一个全频率域态总数守恒规则，在完全带隙光子晶体中还存在一个局域态总数守恒规则.态总数守恒规则指出，如果一个光子晶体的态密度在某些频率范围存在相对于等效介质态密度的谷，则一定由其他频率范围内相对于等效介质态密度的峰来补偿.使用符合态总数守恒规则的态密度模型，解释了态密度调制导致的自发辐射谱增强、抑制、变窄、红移、蓝移以及谱分裂等光子晶体中的量子光学现象.该理论比较适合研究在具有赝带隙的光子晶体中大量随机分布的发光原子或分子的自发辐射行为. 关键词： 光子晶体 自发辐射 态密度 光子赝带隙     

一维掺杂光子晶体缺陷模的共振理论

为了得到一维掺杂光子晶体的共振理论,建立了一维掺杂光子晶体的谐振腔模型,利用谐振腔的共振条件推导出缺陷模频率满足的解析公式,从理论上解释了产生一维掺杂光子晶体缺陷模的物理机理.利用频率的解析公式对缺陷模的频率随入射角、杂质光学厚度以及杂质折射率的变化规律进行了研究,解释了一维掺杂光子晶体缺陷模的变化规律.与特征矩阵法的计算结果相比,其结果完全吻合,从而证明了共振理论的正确性,弥补了一维光子晶体研究中数值计算方法的不足.     

一维掺杂光子晶体缺陷模的共振理论

为了得到一维掺杂光子晶体的共振理论,建立了一维掺杂光子晶体的谐振腔模型,利用谐振腔的共振条件推导出缺陷模频率满足的解析公式,从理论上解释了产生一维掺杂光子晶体缺陷模的物理机理.利用频率的解析公式对缺陷模的频率随入射角、杂质光学厚度以及杂质折射率的变化规律进行了研究,解释了一维掺杂光子晶体缺陷模的变化规律.与特征矩阵法的计算结果相比,其结果完全吻合,从而证明了共振理论的正确性,弥补了一维光子晶体研究中数值计算方法的不足.     

光子晶体中二能级原子的自发辐射

研究光子晶体中二能级原子的自发辐射。由于光的局域化以及缀饰态之间的量子相互作用 ,由局域场、传输场、弥散场组成的原子的辐射场发生变化 :随着激发态能级由禁带移往通带 ,发现局域场中的能量通过弥散场向传输场转移。当局域场和传输场共存时 ,激发态能级上的原子布居数的演化具有准振荡行为 ;当局域场和传输场不共存时 ,原子布居数的演化不具有准振荡行为。另外 ,激发态能级上的稳态原子布居数也发生改变。这些性质不仅依赖于原子的激发态能级ω1与光子频率能带边缘ωc 的相对位置δ,同时也依赖于光子晶体中带边缘的光子态密度 ρ(ωk) (或带边光滑参数ε)。     

基于光子晶体光纤中受激布里渊散射的光载波抑制

设计了一种基于光子晶体光纤中受激布里渊散射的载波滤波器.该滤波器利用两个环形器和一段光子晶体光纤构成了一个环形腔,这种腔结构有效地降低了光纤中受激布里渊散射的阈值.理论分析了光子晶体光纤载波滤波器对提高光调制深度和射频增益的影响.利用25 m的高非线性光子晶体光纤作为受激布里渊增益介质,当入射载波功率为70 mW时,微波光子信号的射频增益为5.38 dB,实验结果与理论计算相吻合.     

用不同密度分布的发光分子探测光子晶体的全态密度

单一原子（分子）的自发辐射衰变的动力学性质强烈地依赖于其在光子晶体中的位置及其辐射偶极矩与所处位置场的相对方向.测量单一原子（分子）的自发辐射衰变特性只能反映光子晶体的局域态密度特征，而不能反映光子晶体的全态密度特征.理论上研究发现，通过引入含不同密度分布的发光分子可以探测到光子晶体的全态密度的部分细节甚至全部信息.按来源首次将全态密度分为两个部分，证明了特定的发光分子分布可以完善地反映其中的一部分或者全部，这为解释、设计加速或抑制原子（分子）自发辐射的实验提供了有益的指导. 关键词： 光子晶体 自发辐射 态密度 密度分布     

具有复介电常量二维光子晶体的特性研究

采用平面波展开法,通过数值模拟研究了具有复介电常量的二维光子晶体的能带结构和光传输特性,重点讨论介电常量的虚部为负值情形时对传输特性的影响。研究表明由于光子带隙的存在有效地抑制了频率位于带隙内光的自发辐射。当在介质中掺入具有增益特性的杂质时,即使两种介质的介电常量相差很小,在靠近光子带隙边缘,出现了较强的受激辐射放大。通常在带隙的边缘处,光子晶体的群速度较小,而激光阈值正比于群速度的平方,当群速度很小时,激光阈值将大大减小。这为实现零阈值激光器提供了基础,也为制作光放大微器件提供了一个有益的理论参考。     

单轴应力对一维镜像光子晶体光子局域态透射峰的影响

利用传输矩阵法研究了镜像异质三周期一维光子晶体中的光子局域态随单轴应力发生变化的特性. 对于镜像异质三周期光子晶体, 由于其镜像结构, 破坏了光子晶体的有序性, 产生了一个缺陷态, 使其在较宽的光子禁带中心有一个光子局域态透射峰. 研究表明: 当对镜像异质三周期光子晶体施加单轴应力时, 其中的光子局域态透射峰会随着应力的改变而发生剧烈的变化. 当外部微弱的机械应力施加到光子晶体上时, 对光子晶体形成一个拉伸应变, 拉伸应变引起光子晶体结构的变化, 进而大幅度影响光子局域态透射峰的透射率.结果表明: 透射峰的透射率明显受单轴应力的影响. 这些特性可为用此结构的光子晶体设计超高灵敏度压力传感器提供理论参考. 关键词： 光子晶体 单轴应力 光子局域态 传输矩阵     

双带型光子晶体中双V型四能级原子自发辐射谱中的黑线研究

研究了双带型光子晶体中双V型四能级原子自发辐射的辐射谱.双V型四能级原子同时与真空热库和双带型光子晶体热库耦合.研究发现双V型四能级原子自发辐射谱中有三种不同原因可能引起的黑线：第一种是由于量子干涉效应;第二种是由于各向同性光子晶体带边处态密度具有奇异性;第三种是真空场中的量子干涉和光子晶体禁带内态密度为零共同作用的结果.通过移动光子晶体的带边位置,在各向同性光子晶体带边引入光滑因子,以及在光子晶体中引入缺陷等对这三种黑线的影响,对上述结果进行了分析和讨论. 关键词： 双带型光子晶体 双V型四能级原子 黑线     

含奇异材料的掺杂一维光子晶体色散关系和空间局域度理论

给出了描述掺杂的一维光子晶体结构缺陷态的变化规律及其空间局域度特性的理论表达式.该式对由具有任意色散关系材料组成的、中间掺杂、两边对称的一维光子晶体结构均成立.通过研究含奇异材料的光子晶体组态发现，当缺陷层材料为右手材料时，光子带隙中缺陷态的频移方向随缺陷层厚度的增大而红移；当缺陷层材料是左手材料时，频移方向刚好相反，表现为蓝移.该缺陷态的空间局域度只与两边对称结构有关.两边对称结构含奇异材料的光子晶体的缺陷态比传统右手材料的结构具有更强的空间局域度.     

Stimulated emission from two-dimensional nested rectangle photonic crystal fibers

In this paper, we use the theory of spontaneous emission of two-level atoms embedded in photonic crystals. The unavoidable existence of a localized field with a defect mode and its basic properties are confirmed, which enables one to study the inherent laws of spontaneous emission from doped media. We combine the theory of spontaneous emission with numerical simulation for studying stimulated emission in a doped localized field and conditions for increasing the emission. The inherent laws for the cases where transmissivity is larger than unity and the negative imaginary part of the complex refractive index in doped compound lattices appears are also studied. The analysis of two-dimensional nested rectangle photonic crystal fibers (PCFs) with and without active impurities was performed using the finite-difference time-domain (FDTD) method. We find that, when active impurities are introduced into photonic crystal fibers, the negative imaginary part of the complex refractive index appears and the doped mode with high quality factor and great mode density occurs in the photonic forbidden band, thus amplifying substantially the stimulated emission.     

Study on optical gain of one-dimensional photonic crystals with active impurity

Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals.Numerical simulations demonstrate that the enhancement of stimulated radiation, as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap, are related to the negative imaginary part of the complex effective refractive index of doped layers. This means that the complex effective refractive index has a negative imaginary part, and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly. Therefore, the spontaneous emission can be enhanced, the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason, the group velocity close to the edges of band gap is very small or abnormal.     

光子晶体对nc-Ge/Si岛发光增强的模拟

在Si基集成光电子学的发展中,高效的Si基光源是人们不懈追求的目标。但是Si材料的间接带隙特性导致其发光效率低,更谈不上受激发射。于是人们探索了多种Si基材料体系来提高Si材料的发光效率,并在不同程度上取得了重要的进展。在众多的Si基发光材料体系中,Ge/Si量子点材料,不仅生长工艺与标准的CMOS工艺有很好的兼容性,而且发光波长能够覆盖重要的光通信波段即1.3~1.55μm,因此成为实现Si基发光器件的重要途径之一。但是目前这种材料的发光效率仍很低,所以提高其发光效率自然成为人们关注的焦点。如果将光子晶体引入到nc-Ge/Si材料中,它不仅可以改变材料本身的自发发射特性,而且可以改变发射的光子的提取效率,从而使材料的发光效率得到增强。提出了在Ge/Si量子点材料中引入光子晶体结构来提高其发光效率,包括光子晶体点缺陷腔结构和带边模式工作的完整光子晶体结构,并从理论上分析了发光效率提高的原理。针对发光波长在1.5μm附近的材料结构,模拟出了相应的光子晶体的结构参数。从模拟结果可以看出,对于缺陷腔的光子晶体结构,采用单点缺陷微腔很好地实现了单模运作,但是微腔内有源材料的体积很小,因此得到的发光效率很低。而采用耦合缺陷腔的结构和H₂腔都增加了腔内有源区的体积。但是耦合腔与H₂腔相比,谐振腔模减少,主谐振模式的峰值强度增加,更容易实现单模发光。因而更适用于提高nc-Ge/Si的发光效率。而带边模式工作的光子晶体结构,尺寸较大,不需引入缺陷,工艺上更容易实现。     

Decay of a quantum dot in two-dimensional metallic photonic crystals

In this paper we have developed a theory for the decay of a quantum dot doped in a two-dimensional metallic photonic crystal consisting of two different metallic pillars in an air background medium. This crystal structure forms a full two-dimensional photonic band gap when the appropriate pillar sizes are chosen. The advantage of using two metals is that one can easily control the density of states and optical properties of these photonic crystals by changing the plasma energies of two metals rather than one. Using the Schrödinger equation method and the photonic density of states, we calculated the linewidth broadening and the spectral function of radiation due to spontaneous emission for two-level quantum dots doped in the system. Our results show that by changing the plasma energies one can control spontaneous emission of quantum dots doped in the metallic photonic crystal.     

Position Dependent Spontaneous Emission Spectra of a Λ-Type Atomic System Embedded in a Defective Photonic Crystal

We investigate the position dependent spontaneous emission spectra of a Λ-type three-level atom with one transition coupled to the free vacuum reservoir and the other one coupled to a double-band photonic band gap reservoir with a defect mode in the band gap.It is shown that,for the atom at the defect location,we have a two-peak spectrum with a wide dark line due to the strong coupling between the atom and the defect mode.While,when the atom is far from the defect location(or in the absence of the defect mode),the spectrum has three peaks with two dark lines due to the coupling between the atom and the photonic band gap reservoir with the largest density of states near the band edges.On the other hand,we have a four-peak spectrum for the atom at the space in between.Moreover,the average spontaneous emission spectra of the atoms uniformly embedded in high dielectric or low dielectric regions are described.It is shown that the atoms embedded in high(low) dielectric regions far from the defect location,effectively couple to the modes of the lower(upper) photonic band.However,the atoms embedded in high dielectric or low dielectric regions at the defect location,are coupled mainly to the defect modes.While,the atoms uniformly embedded in high(low) dielectric regions with a normal distance from the defect location,are coupled to both of defect and lower(upper) photonic band modes.     

Spatial and frequency domain effects of defects in 1D photonic crystal

The aim of this paper is to present the analysis of influence of defects in 1D photonic crystal (PC) on the density of states and simultaneously spontaneous emission, in both spatial and frequency domains. In our investigations we use an analytic model of 1D PC with defects. Our analysis reveals how presence of a defect causes a defect mode to appear. We show that a defect in 1D PC has local character, being negligible in regions of PC situated far from the defected elementary cell. We also analyze the effect of multiple defects, which lead to photonic band gap splitting.     

一种研究一维掺杂光子晶体缺陷模的方法

建立一维掺杂光子晶体的谐振腔模型并研究其缺陷模特性,采用相干叠加的方法推导缺陷模的透射率及频率,建立一种研究缺陷模的方法——相干叠加法.将相干叠加法与特征矩阵法和共振理论进行比较,结果表明:相干叠加法具有特征矩阵法和共振理论的优点,并克服了特征矩阵法和共振理论的不足.相干叠加法是一种研究一维掺杂光子晶体缺陷模的更为有效的方法.     

Spectral narrowing and lasing threshold in self-assembled active photonic crystal

Laser-induced emission from rhodamine-B dye embedded in pseudo band gap opaline photonic crystals is discussed. The photonic crystals are fabricated using rhodamine-B doped polystyrene colloids and show 65% reflectance at the stop band centered at 604 nm. The reflectance of the crystal is increased to 74% by coating with a thin layer of gold. Both spontaneous and stimulated emissions of the dye are observed in the photonic stop band environment by exciting the crystal with the second harmonic (532 nm) of a Q-switched Nd:YAG laser. The thin layer of gold functioned as a high reflecting end mirror to the dye-doped cavity when the crystal is pumped from the substrate side. Angle-dependent suppression at the stop band wavelength is observed in the spontaneous emission of the dye. Spectrally narrow stimulated emission and lasing is achieved in the gold coated dyed PhC at a threshold pump power of 60 mW in a selective direction of 22° from the direction of excitation. By studying emission from several photonic crystals with different number of layers, it is concluded that a sharp threshold for lasing is not observed in uncoated photonic crystals when they contained fewer than 30 ordered layers and lesser than 70% reflectance.