Structural,electrical and optical properties of tin doped cadmium oxide thin films obtained by sol–gel

Transparent and conducting tin doped cadmium oxide thin films were obtained by mixing cadmium oxide and tin oxide precursor solutions by the sol–gel method. Different tin contents in solution were studied: 0, 0.5, 1, 2, 3, 5 and 10 at.%. The films were sintered at 550 °C and, after that, annealed in N₂/H₂ gas mixture, in order to decrease their resistivity. X-ray diffraction patterns showed that doping of tin diminishes the [111] light preferred orientation of films and provokes a decrease of the average crystallite size from 30 to 12 nm. Atomic force microscopy images revealed morphological changes with the addition of tin content. All the films showed a high transmission around 75 % in the 600 < λ < 1,700 nm range and a shift of the absorption edge towards the blue region as the tin concentration was increased. The cadmium oxide films doped with 1 at.% of tin showed the lowest resistivity of 5.7 × 10^?4 Ω cm and a band gap energy value of 2.7 eV. For their characteristics, these CdO:Sn films are good candidates as transparent conductive electrodes in CdS/CdTe and CdS/CIGS type solar cells.     

Improved optical and electrical properties of sol–gel-derived boron-doped zinc oxide thin films

Sol–gel spin-coating was used to grow zinc oxide (ZnO) thin films doped with 0–2.5 at.% B on quartz substrates. The structural, optical, and electrical properties of the thin films were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet–visible spectroscopy, and van der Pauw Hall-effect measurements. All the thin films had deposited well onto the quartz substrates and exhibited granular morphology. The average crystallite size, lattice constants, residual stress, and lengths of the bonds in the crystal lattice of the thin films were calculated from the XRD data. The PL spectra showed near-band-edge (NBE) and deep-level emissions, and B doping varied the PL properties and increased the efficiency of the NBE emission. The optical transmittance spectra for the undoped ZnO and boron-doped zinc oxide (BZO) thin films show that the optical transmittance of the BZO thin films was significantly higher than that of the undoped ZnO thin films in the visible region of the spectra and that the absorption edge of the BZO thin films was blue-shifted. In addition, doping the ZnO thin films with B significantly varied the absorption coefficient, optical band gap, Urbach energy, refractive index, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator strength, average oscillator wavelength, dielectric constant, and optical conductivity of the BZO thin films. The Hall-effect data suggested that B doping also improved the electrical properties such as the carrier concentration, mobility, and resistivity of the thin films.     

Structural,dielectric and electrical properties of zinc doped nickel nanoferrites prepared by simplified sol–gel method

Zinc doped nickel ferrite nanoparticles having the general formula Ni_1−xZn_xFe₂O₄ (x = 0.1, 0.2, 0.3, 0.4, 0.5) were prepared with simplified sol–gel method. The structural and dielectric properties of these samples sintered at 750 ± 5 °C were studied. X-ray diffraction patterns confirm the single phase spinel structure for prepared samples. The scanning electron microscope images indicated that the particle size of the samples lies in the nanometer regime. The dielectric constant (ε_r) and dielectric loss tangent (tan δ) of nanocrystalline nickel ferrites were investigated as a function of frequency and Zn concentration. The dependence of ε_r and tan δ on the frequency of the alternating applied electric field is in accordance with the Maxwell–Wagner model. The prepared samples have a lowest dielectric constant compared to the already reported samples of the same composition to the best of our knowledge. The effect of Zn doping on the dielectric properties of nickel ferrites is explained on the basis of cations distribution in the crystal structure.     

SnO2 thin films doped indium prepared by the sol–gel method: structure, electrical and photoluminescence properties

This paper reports on the preparation, characterization, electrical and optical properties of tin oxide (SnO₂) thin films doped indium prepared by the sol–gel method and deposited on glass substrates with dip coating technique. X-ray diffraction patterns showed an increase in the crystallinity of the films with increase in annealing temperatures. Atomic force microscopy analyses revealed an increase of grain growth with raise in annealing temperature. The film surface revealed positive skewness and kurtosis values less than 3 which make them favorable for OLEDs applications. The lowest resistivity (about 10^?7) was obtained for the ITO films annealed at 500 °C. These films acquire n-type conductivity due to the non-stoichiometric in the films like (interstitial tin atoms) and also due to low indium doping concentration. The optical properties of the films have been studied from transmission spectra. An average transmittance of >80 % in ultraviolet–visible region was observed for all the films. Optical band gap energy (E _gap) of ITO films was found to vary in the range of 3.69–3.81 eV with the increase in annealing temperature. This slight shift of E _gap to higher photon energies could be related to the crystalline nature of the films associated with the decrease in the defect concentration caused by annealing. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in annealing temperature. The high temperature annealing would be expected to decrease the density of defects, improve the crystal orientation and reduce the traps for non-radiative transition and also increase the oxidation processes.     

Modification of surface morphology and lattice order in nanocrystalline ZnO thin films prepared by spin-coating sol–gel method

Journal of Sol-Gel Science and Technology - Halloysite Nanotubes (HNTs) with large surface/volume ratio and rich reactive groups are incorporated into Fe-based MOF aerogel to develop MOF(Fe)/HNTs...     

Effect of sintering temperature on the structural, optical and electrical properties of sol–gel derived indium oxide thin films

Sol gel derived indium oxide, In₂O₃; films were prepared by spin coating technique. The films were dried and sintered at different sintering temperatures (300, 400, 450 and 500 °C) in air. The effect of sintering temperature on the structural, optical and electrical properties of In₂O₃ thin films was studied. The morphology and structure of the films were analyzed by scanning electron microscope and X-ray diffraction. The films showed a bcc structure that changes its 400-preferential orientation to 222 orientation as the sintering temperature increases from 300 to 500 °C. The optical behavior of the films was studied by measuring the transmission spectra in the wavelength range 200–2,500 nm. Different optical models have been proposed for fitting the transmittance data and simulate the optical constants as well as the film thickness of In₂O₃ films. The best fitting of the data was obtained by combining the classical Drude and OJL models coupled with the Bruggeman effective medium approximation. The optical parameters of Drude model (plasma frequency and damping constant) are used calculate the electrical properties of the films. The calculated values of the electrical sheet resistance were compared with those measured experimentally by four probes. The correlation between the film orientation change and its optical and electrical properties was discussed.     

Structure and magnetic properties of La0.67Sr0.33MnO3 thin films prepared by sol–gel method

La_1?xSr_xMnO₃ (x = 0.33) (LSMO) thin films have been fabricated successfully by sol–gel method on two different types of substrates, Si (111) and SrTiO₃ (STO) (001). Microstructure and magnetic properties of LSMO thin films have been investigated. The X-ray diffraction studies of the films confirm the pure phase of the LSMO thin films. In contrast with LSMO thin films on Si substrate, the performances of LSMO on STO substrate are superior both from structural and magnetic properties. For the samples deposited on STO substrate, highly preferred orientation as well as less strain and grain defects was found; in other aspect, the magnetization, the residual and saturation moment value, tended greater while a decreased coercive field required merely (saturation moment value was about five times and coercive field was only about 13 % of those on Si substrate). The Curie temperature of LSMO thin films on Si and STO substrates is estimated to be about 349.7 and 359 K, respectively.     

The morphologies and optoelectronic properties of delafossite CuFeO2 thin films prepared by PEG assisted sol–gel method

Single phase delafossite CuFeO₂ thin films were synthesized by a simple sol–gel method. The influence of polyethylene glycol (PEG) on the morphology and optoelectronic properties of the films was studied by addition of 1.0 g PEG in 10 ml precursor solution. The crystal sizes of the derived CuFeO₂ films with and without addition of PEG were 49 nm, but the sample with addition of PEG (labeled as CFO-PEG) showed weaker c-axis orientation growth. The sample without addition of PEG (labeled as CFO) showed a compact surface without detectable pores and had a thickness around 50 nm. However, the sample CFO-PEG exhibited a porous surface with worm-like grains in nanometric scale and had a thickness around 310 nm. Enhanced absorbance in UV–vis region was observed for the sample CFO-PEG which might ascribe to both the thickness and porous surface. The optical direct bandgaps at near-UV were estimated to be ~3.0 and 3.38 eV for the sample CFO-PEG and CFO, respectively. Though the porous surface of CFO-PEG has improved the absorbance in UV–vis region, the resistivity has also been increased due to the homogeneous distribution of interspaces between the worm-like grains, which makes the incident photon to current efficiency of CFO-PEG lower than that of CFO.     

Structural and optical characterization of Ag-doped TiO2 nanoparticles prepared by a sol–gel method

Undoped and silver-doped TiO₂ nanoparticles (Ti_1?x Ag _x O₂, where x?=?0.00?C0.10) were synthesized by a sol?Cgel method. The synthesized products were characterized by X-ray diffraction (XRD), particle size analyzer (PSA), scanning electron microscope (SEM), and UV?CVisible spectrophotometer. XRD pattern confirmed the tetragonal structure of synthesized samples. Average crystallite size of synthesized nanoparticles was determined from X-ray line broadening using the Debye?CScherrer formula. The crystallite size was varied from 8 to 33?nm as the calcination temperature was increased from 300 to 800?°C. The incorporation of 3 to 5% Ag⁺ in place of Ti⁴⁺ provoked a decrease in the size of nanocrystals as compared to undoped TiO₂. The SEM micrographs revealed the agglomerated spherical-like morphology of particles. SEM, PSA, and XRD measurements show that the particles size of the powder is in nanoscale. Optical absorption measurements indicated a red shift in the absorption band edge upon silver doping. Direct allowed band gap of undoped and Ag-doped TiO₂ nanoparticles measured by UV?CVis spectrometer were 3.00 and 2.80?eV, respectively, at 500?°C.     

Microstructure and performance of AZO thin films prepared by sol–gel processing

Al-doped zinc oxide (AZO) films were prepared by a wet-chemical coating technique, their microstructure and crystal growth were characterized as a function of the single layer thickness. When similar final thicknesses are attained by more multiple subsequent coating-firing cycles, film porosity is reduced from over 14 to 2 %. Simultaneously the AZO crystallite size is increased from approximately 23 to 60 nm, a preferential c-axis oriented growth is observed. Different substrates (soda-lime glass, soda-lime glass with a SiO₂ barrier coating, borosilicate glass and alkali-free display glass) were used and the resulting AZO films were compared. It is found that the substrate composition primarily affects grain growth and subsequently the electrical performance of the AZO films.     

Deposition of silica thin films formed by sol–gel method

Deposition of silica thin films on silicon wafer was investigated by in situ mass measurements with a microbalance configured for dip coating. Mass change was recorded with respect to deposition time when the substrate was fully immersed in the silica sol. Mass gain during deposition was higher than predicted from monolayer coverage of silica nano particles. This implied that deposition was facilitated by gelling of the nanoparticles on the substrate. The rate of deposition was enhanced by increasing the particle concentration in the sol and by decreasing the particle size from 12 to 5 nm. Increasing the salt concentration of the silica sol at constant pH enhanced the deposition of the silica particles. Reducing the pH of the sol from 10 to 6 decreased the deposition rate due to aggregation of the primary silica particles.     

An investigation of the microstructure,optical and electrical properties of ZITO thin film using the sol–gel method

The multi-compound ZITO transparent conductive oxide (TCO) thin films were synthesized using the sol–gel method. The ZITO thin films with various volume ratios of ZnO to ITO (1:1, 2:1 and 9:1) were crystallized at different temperatures (600–700 °C). The results showed that the crystalline characteristics and optical transmittance were mainly dependent on ITO content and crystallization. Notably, the 650 °C Z₉ITO film not only had better conductivity but also possessed excellent optical transmittance. In addition, the surface roughness of the ZITO films and optoelectric properties of IZO (indium doped ZnO) films were analyzed to confirm the contribution of indium dopants on the optical transmittance. Also, the ZITO films were subjected to the effects of indium and tin dopants and this improved the related characteristics of ZnO films.