微波等离子体化学气相沉积法低温制备直纳米碳管膜

Among the three main methods for the synthesis of carbon nanotubes (CNTs)， chemical vapor deposition (CVD) has received a great deal of attention since CNTs can be synthesized at significantly low temperature. Plasma chemical vapor deposition methods can synthesize CNTs at lower temperature than thermal CVD. But in the usual catalytic growth of CNTs by CVD， CNTs are often tangled together and have some defects. These will limit the property research and potential applications. How to synthesize the straight CNTs at low temperature becomes a challenging issue. In this letter， straight carbon nanotube (CNT) films were achieved by microwave plasma chemical vapor deposition (MWPCVD) catalyzed by round Fe-Co-Ni alloy particles on Ni substrate at 610℃. It was found that， in our experimental condition， the uniform growth rate along the circumference of round alloy particles plays a very important role in the growth of straight CNT films. And because the substrate is conducting， the straight CNT films grown at low temperature may have the benefit for property research and offer the possibility to use them in the future applications.     

A Three-Dimensional Two-Phase Model for Thermal Plasma Chemical Vapor Deposition with Liquid Feedstock Injection

In this paper, a comprehensive model for thermal plasma chemical vapor deposition (TPCVD) with liquid feedstock injection is documented. The gas flow is assumed to be steady, of a single temperature. Radiation and charged species contributions are excluded, but extensive homogeneous and heterogeneous chemistry is included. The liquid phase is traced by considering individual droplets. Discussion on the model's application to diamond production from acetone in a hydrogen–argon plasma is included. The major conclusions are: (1) Liquid injection possesses a capability to deliver the hydrocarbon precursor directly onto the deposition target. (2) For the case of complete evaporation of the droplet before reaching the substrate, the deposition rate is similar to that obtained with gaseous precursors. (3) The computational results compare well with experimental data. The modeling results can be used to optimize the injection parameters with regard to the deposition rate.     

化学气相沉积法制备氮化钛

本文以氮化钛的CVD制备为例,说明了源物质的选择对CVD过程的影响.在此基础上,综述了化学气相沉积技术在材料制备领域的最新进展.     

化学蒸汽发生/电感耦合等离子体质谱法测定近岸及河口海水中的超痕量砷、锑、铋、锗、锡、汞

建立了化学蒸汽发生(CVG)电感耦合等离子体质谱(ICP MS)同时测定近岸及河口海水中超痕量As、Sb、Bi、Ge、Sn和Hg元素的方法.研究了CVG过程中KBH4、盐酸和硫脲的浓度以及样品流速、载气流速、海水样品盐度等对方法分析性能的影响.结果表明,在0.70％6盐酸、0.10 g/L硫脲、11.0 g/L硼氧化钾...     

电感耦合等离子体质谱的微量进样系统分析性能评价及其应用

用2种微量雾化器组装成微量进样系统与常规气动雾化方式的ICP－MS的分析性能作了详细比较。FM02雾化器在22μL/min低提升率下，20μg/L的Be、Co、In和Bi进行10次平行测定的RSD分别为7．6％、3．0％、2．7％和1．8％；检出限分别为0．14、0．10、002和0．01μg/L;^115In的信号强度达到常规气动雾化器1．3mL/min提升速率下的60％，显示了良好的分析性能。对20μL Wistar鼠的羊水样品中La、Ce、Pr和Nd4种元素的测定结果与常规进样系统的结果完全吻合。     

微波等离子体辅助化学气相沉积法低温合成定向碳纳米管阵列

自碳纳米管被发现以来[1] ,这种准一维纳米新材料由于其优异的力学、电学、储氢等理化性质而显示出非常重要的理论研究与实际应用价值[2 ,3] .碳纳米管阵列更可作为场致发射器件 ,有望应用于冷阴极平板显示器或纳米电子学等前沿领域[4 ] ,成为碳纳米管研究中的热点 .在已有报道的多种制备碳纳米管阵列的方法中 ,以孔性硅或孔性 Al2 O3作为模板剂 ,通过化学气相沉积制备的方法较为普遍[5～ 7] ,但此类方法往往需要在较高温度 (高于 70 0℃[6 ,7] )下进行 ,对于碳纳米管阵列最诱人的应用前景之一平板显示器而言 ,要求在显示玻璃表面直接生长…     

Chemical Ionization Mass Spectrometry of Pertrimethylsilylated Desulphoglucosinolates

IntroductionRapeseedisanimportantsource0fedibleoilintheworld.Themeal(residueafterbeingde-fatted)containsab0ut40%ofnutritionallyvaluableprotein.Unfortunately,itsusehasbeenlindtedbythepresence0fglucosinolates.Glucosinolates(GS)aresulfur-c0ntalningorganiccompounds,whichcommonlyoccurinspeciesofcrucderaecrops(e.g.mustard,rape,cabbage)andareresponsibleforthepungentodorandshmptaste.However,anumberofGShavebeenass0ciatedwithtoxicityasitsbreakdownproductsinterferewiththyroidfunctions,resultinginreduce…     

化学气相沉积法合成二维过渡金属硫族化合物研究进展

二维晶体材料所独有的二维平面结构赋予了这类材料诸多独特的性质. 近年来围绕二维过渡金属硫族化合物的相关研究发展迅速. 本文以二维MoS₂、WS₂为代表概述了利用化学气相沉积法合成过渡金属硫族化合物二维晶体的研究进展, 阐述了基本合成策略, 讨论了主要影响因素, 归纳了以MoS₂、WS₂为结构基元的二维合金及异质结构的合成方法, 最后阐明了利用化学气相沉积法合成二维晶体存在的主要问题并展望了这一领域的发展前景.     

微量进样/ICP-MS体系中的基体效应研究

考察了自行组装的高效微量进样系统在22μL/min低提升量下电感耦合等离子体质谱的基体效应.质量数和电离电位不同的基体元素质量浓度为2g/L时,低质量数分析元素受到一定的干扰,而对于高质量数分析元素,其信号几乎不受基体元素干扰,归一化信号值接近1.对于体积分数为5%的有机基体样品溶液,此微量高效雾化系统测得的归一化信号值多接近0.5.实际样品中常见的基体元素K,Na,Ca和Mg质量浓度低于500mg/L,以及乙醇和乙酸体积分数小于1%时,微量进样系统均不产生显著干扰.     

A Global Model of Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air Containing Octamethylcyclotetrasiloxane Vapor

A model of the electron distribution in direct current corona plasmas is combined with a global chemistry model and a two-dimensional transport model to predict the rate of chemical vapor deposition of silicon dioxide on the discharge wire in both positive and negative discharges in dry air containing octamethylcyclotetrasiloxane. The gas-phase chemistry includes reactions to form atomic oxygen (O) and additional global reactions to form gaseous silicon dioxide precursors by the impact reactions of electrons and atomic oxygen with silicone molecules. Surface chemistry is approximated by a single step global reaction from gaseous to solid silicon dioxide. The rate coefficient between atomic oxygen and octamethylcyclotetrasiloxane is estimated from prior experiments to be on the order of 10^–12 cm³/molecule-s. The effects of discharge polarity, current, wire radius and air velocity (Peclet number for mass transfer) on the deposition rate are considered. Deposition rates can be minimized by using positive coronas instead of negative coronas for Peclet number less than 18.5. At higher Peclet numbers, the deposition rate is slightly higher in positive corona discharges, but devices used indoors should continue to use the positive corona in order to minimize the production of ozone. The deposition rate in the positive corona is relatively insensitive to air velocity for velocities from 0.044 to 10 m/s^–1 . However,it may be minimized by operating the corona with the lowest current that provides adequate performance (e.g., particle charging) and the smallest wire that provides adequate mechanical strength.     

Low-Pressure Chemical Vapor Deposition of Silicon Carbide Thin Films from Organopolysilanes

(Me₃Si)₂SiMe₂, (Me₃Si)₃SiMe and (Me₃Si)₄Si were used as precursors for the deposition of polycrystalline β-SiC thin films on silicon substrates at 1000–1200°C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.     

聚酰亚胺上催化剂增强化学气相沉积钯-铂双层膜

 以N2和O2为载气,采用催化剂增强化学气相沉积法于聚酰亚胺上获得了Pt和Pd-Pt双层金属薄膜. 当使用Pd(hfac)2和PtMe2(COD)为前驱体,在同一反应器内共沉积时,只有Pt被沉积. 金属Pd和Pt顺序沉积可形成Pd-Pt双层膜.     

聚砜上催化剂增强化学气相沉积钯-铂双层纳米膜

以N2和O2作载气,采用催化剂增强化学气相沉积法在聚砜上获得了Pt和Pd-Pt双层金属纳米薄膜.当使用Pd(hfac)2和Pt(COD)Me2为前驱体在同一反应器内共沉积时,只有Pt被沉积,铂和钯顺序沉积可以得到双层膜.聚砜上金属钯和铂微粒尺度为15~30 nm,双层膜厚度为120~180 nm.     

气相色谱-电感耦合等离子体质谱

从接口设计、色谱和质谱技术的应用和实际应用等方面对气相色谱－电感耦合等离子体质谱的进展进行了介绍。     

催化增强化学蒸气沉积法在聚酰亚胺上沉积钯-铂合金薄层

以N₂，O₂作载气，通过催化增强化学蒸气沉积(CECVD)分别制得在聚酰亚胺上的金属铂、钯及其合金薄层。铂、钯配合物的共同沉积可生成Pt-Pd合金薄膜。在Pd-Pt合金的沉积过程中，Pd/Pt的原子数比率随共同沉积的条件改变而变化。O₂为载气、300 ℃条件下,用Pd(η³-allyl)(hfac)和Pt(COD)Me₂作前驱体共沉积制备Pd-Pt合金，得到含Pd 37.2%，Pt 62.8%且不     

类石墨烯二硫化钨薄膜的化学气相沉积法制备及其应用

类石墨烯过渡金属硫属化合物如MoS₂、WS₂、MoSe₂、WSe₂等因为具有层数依赖的带隙结构而受到了广泛关注。尤其是本征态的WS₂为双极性半导体,它同时具有n型和p型电输运特性,有望在电子电路、存储器件、光电探测和光伏器件方面得以广泛应用。近年来,化学气相沉积技术已经被广泛用于制备大面积二维硫属化合物(如MoS₂, MoSe₂, WS₂ 和WSe₂)原子层薄膜。目前关于其他二维材料体系的综述文献介绍较多,但是针对WS₂介绍的综述文献还鲜有报道。因此,本文综述了类石墨烯WS₂薄膜的化学气相沉积法制备和相关器件的国内外研究进展,讨论了WS₂薄膜的化学气相沉积法制备机理及生长因素如硫粉含量、载气的成分、反应温度、基底材料等对薄膜成膜质量的影响,介绍了WS₂薄膜在晶体管、光电器件及与其他二维材料构成的异质结构器件的最新研究成果,并对可能存在的问题进行了分析和述评。     

单晶硅上化学气相沉积铜薄膜的机理研究

A versatile metal-organic chemical vapor deposition (MOCVD) system was designed and constructed. Copper films were deposited on silicon (100) substrates by chemical vapor deposition (CVD) using Cu(hfac)2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu(hfac)2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode (island), and then transforms to Stranski-Rastanov mode (layer-by-layer plus island).The mechanism of Cu nucleation on silicon (100) substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu(hfac) formed by the thermal dissociation of Cu(hfac)2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu(hafc)2 and H2 occurs.     

Sustained and Controlled Release of Volatile Precursors for Chemical Vapor Deposition of Graphene at Atmospheric Pressure

Precursors and catalysts play vital roles in chemical reactions. Considerable efforts have been devoted to the investigation of catalysts for graphene growth by chemical vapor deposition in recent years. However, there has been little research on precursors because of a lack of innovation in term of creating a controllable feeding method. Herein, we present a novel sustained and controlled release approach, and develop a convenient, safe, and potentially scalable feeding system with the assistance of matrix materials and a simple portable feeder. As a result, a highly volatile liquid precursor can be fed accurately to grow large-area, uniform graphene films with optimal properties. This feeding approach will further benefit the synthesis of other two-dimensional materials from various precursors.     

Superclean Growth of Graphene Using a Cold-Wall Chemical Vapor Deposition Approach

Chemical vapor deposition (CVD) has become a promising approach for the industrial production of graphene films with appealing controllability and uniformity. However, in the conventional hot-wall CVD system, CVD-derived graphene films suffer from surface contamination originating from the gas-phase reaction during the high-temperature growth. Shown here is that the cold-wall CVD system is capable of suppressing the gas-phase reaction, and achieves the superclean growth of graphene films in a controllable manner. The as-received superclean graphene film, exhibiting improved optical and electrical properties, was proven to be an ideal candidate material used as transparent electrodes and substrate for epitaxial growth. This study provides a new promising choice for industrial production of high-quality graphene films, and the finding about the engineering of the gas-phase reaction, which is usually overlooked, will be instructive for future research on CVD growth of graphene.     

Ultrafast Electron Transfer Kinetics of Graphene Grown by Chemical Vapor Deposition

High electrochemical reactivity is required for various energy and sensing applications of graphene grown by chemical vapor deposition (CVD). Herein, we report that heterogeneous electron transfer can be remarkably fast at CVD‐grown graphene electrodes that are fabricated without using the conventional poly(methyl methacrylate) (PMMA) for graphene transfer from a growth substrate. We use nanogap voltammetry based on scanning electrochemical microscopy to obtain very high standard rate constants k⁰≥25 cm s^?1 for ferrocenemethanol oxidation at polystyrene‐supported graphene. The rate constants are at least 2–3 orders of magnitude higher than those at PMMA‐transferred graphene, which demonstrates an anomalously weak dependence of electron‐transfer rates on the potential. Slow kinetics at PMMA‐transferred graphene is attributed to the presence of residual PMMA. This unprecedentedly high reactivity of PMMA‐free CVD‐grown graphene electrodes is fundamentally and practically important.