Self-assembling of C and Sn in Ge

Self-assembling of isoelectronic C and Sn impurities in Ge is predicted. The formation of the 1C4Sn tetrahedral cells is thermodynamically profitable in Ge-rich C_xSn_yGe_1−x−y (4x<y) alloys in the ultra dilute C impurity limit with 1×10^-8x1×10^-3. The concentrations of Sn atoms when all C atoms are surrounded only by Sn atoms are estimated for the lower molecular beam epitaxy, intermediate annealing and higher bulk crystallization temperatures. The origin of this phenomenon is a considerable decrease of the strain energy after self-assembling. The same self-assembling in Si is thermodynamically non-profitable due to the large cohesive energy of Si–C chemical bonds.     

Effect of microstructure on the conductivity of a NASICON-type lithium ion conductor

Sintering temperature is used to control the microstructure of Li_{1 + x + y}Al_xTi_2 − xSi_yP_3 − yO₁₂ (x = 0.3, y = 0.2), a NASICON-type glass-ceramic. Scanning Electron Microscope imaging, X-Ray Diffraction, and Electrochemical Impedance Spectroscopy are employed to show that increase in sintering temperature increases conductivity while generating secondary crystalline phases. Total conductivity is as high as 3.81 × 10⁻⁴ S cm⁻¹ for sintering temperatures above 1000 °C. Crystallization of dielectric phases places the optimal sintering temperature in the 900 °C to 1000 °C range. Thermal analysis of the glass precursor reveals the glass transition, and crystallization temperatures.     

Effects of protons and acceptor substitution on the electrical conductivity of La6WO12

Transport properties and non-stoichiometry of La_1−xCa_xW_1/6O₂ and La_1−yW_1/6O₂ (x=0, 0.005, 0.05; y=0.05, 0.1) have been characterized by means of impedance spectroscopy, the EMF-technique, H⁺/D⁺ isotope exchange, and thermogravimetry in the temperature range 300-1200 °C as a function of oxygen partial pressure and water vapor partial pressure. The materials exhibit mixed ionic and electronic conductivities; n- and p-type electronic conduction predominate at high temperatures under reducing and oxidizing conditions, respectively. Protons are the major ionic charge carrier under wet conditions and predominates the conductivity below ∼750 °C. The maximum in proton conductivity is observed for LaW_1/6O₂ with values reaching 3×10⁻³ S/cm at approximately 800 °C. The high proton conductivity for the undoped material is explained by assuming interaction between water vapor and intrinsic (anti-Frenkel) oxygen vacancies.     

Single crystal EPR and optical absorption study of Cr doped l-histidine hydrochloride monohydrate

EPR study of the Cr³⁺ ion doped l-histidine hydrochloride monohydrate single crystal is done at room temperature. Two magnetically inequivalent interstitial sites are observed. The hyperfine structure for Cr⁵³ isotope is also obtained. The zero field and spin Hamiltonian parameters are evaluated from the resonance lines obtained at different angular rotations and the parameters are: D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.9108±0.0002, g_y=1.9791±0.0002, g_z=2.0389±0.0002, A_x=(252±2)×10⁻⁴ cm⁻¹, A_y=(254±2)×10⁻⁴ cm⁻¹, A_z=(304±2)×10⁻⁴ cm⁻¹ for site I and D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.8543±0.0002, g_y=1.9897±0.0002, g_z=2.0793±0.0002, A_x=(251±2)×10⁻⁴ cm⁻¹, A_y=(257±2)×10⁻⁴ cm⁻¹, A_z=(309±2)×10⁻⁴ cm⁻¹ for site II, respectively. The optical absorption studies of single crystals are also carried out at room temperature in the wavelength range 195-925 nm. Using EPR and optical data, different bonding parameters are calculated and the nature of bonding in the crystal is discussed. The values of Racah parameters (B and C), crystal field parameter (Dq) and nephelauxetic parameters (h and k) are: B=636, C=3123, Dq=2039 cm⁻¹, h=1.46 and k=0.21, respectively.     

ESR of Cu doped cadmium (II) formate dihydrate

Electron spin resonance (ESR) of Cu²⁺ doped cadmium formate dihydrate single crystal was studied at room temperature. Copper enters the lattice substitutionally and is trapped at two magnetically inequivalent sites. The observed spectra are fitted to a spin-Hamiltonian of rhombic symmetry with the following values of the spin-Hamiltonian parameters, Cu²⁺(I): g_x=2.097±0.002, g_y=2.1166±0.002, g_z=2.2887±0.002 and A_x=(140±2)×10⁻⁴ cm⁻¹, A_y=(151±2)×10⁻⁴ cm⁻¹, A_z=(239±2)×10⁻⁴ cm⁻¹, Cu²⁺(II): g_x=2.0843±0.002, g_y=2.1045±0.002, g_z=2.2742±0.002 and A_x=(141±2)×10⁻⁴ cm⁻¹, A_y=(158±2)×10⁻⁴ cm⁻¹, A_z=(267±2)×10⁻⁴ cm⁻¹. The ground state wave function of the Cu²⁺ ion in this lattice is evaluated. It is found that the ground state is predominantly |x²−y²〉. The g-factor anisotropy is also calculated and compared with the experimental value. With the help of the optical absorption study, the nature of bonding in the complex has been discussed.     

Magnetic and magnetoelastic properties of Zn-doped cobalt-ferrites—CoFe2−xZnxO4 (x=0, 0.1, 0.2, and 0.3)

Cobalt-ferrite (CoFe₂O₄) based materials are suitable candidates for magnetomechanical sensor applications owing to a strong sensitivity of their magnetostriction to an applied magnetic field. Zn-doped cobalt-ferrites, with nominal compositions CoFe_2−xZn_xO₄ (x=0–0.3), were synthesized by auto-combustion technique using Co- , Fe- , and Zn-nitrate as precursors. X-ray spectra analysis and Transmission electron microscopy studies revealed that the as-prepared powders were comprised of nano-crystalline (∼25–30 nm) cubic-spinel phase with irregularly-shaped grains morphology along with minor impurity phases. Calcination (800 °C for 3 h) of the precursor followed by sintering (1300 °C for 12 h) resulted in a single phase cubic-spinel structure with average grain size ∼2–4 μm, as revealed from scanning electron micrographs. The magnitude of coercive field decreases from ∼540 Oe for x=0 to 105 Oe for x=0.30. Saturation magnetization initially increases and peaks to ∼87 emu/g for x=0.2 and then decreases. The peak value of magnetostriction monotonically decreases with increasing Zn content in the range 0.0–0.3; however the piezomagnetic coefficient (dλ/dH) reaches a maximum value of 105×10⁻⁹ Oe⁻¹ for x=0.1. The observed variation in piezomagnetic coefficient in the Zn substituted cobalt ferrite is related to the reduced anisotropy of the system. The Zn-doped cobalt-ferrite (x=0.1) having high strain derivative could be a potential material for stress sensor application.     

Investigation on FR(LT)–FR(HT) phase transition and pyroelectric properties of pulsed laser deposited Pb(Zr0.93Ti0.07)O3 thin films

The preparation process, crystallinity and electrical properties of pulse laser deposited Pb(Zr_xTi_1−x)O₃ (PZT) thin films were investigated in this paper. PZT (x = 0.93) thin film samples deposited at different substrate temperatures were prepared. Si (1 1 0) was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by pulsed laser deposition (PLD), and then PZT was epitaxially deposited on YBCO also by PLD. After annealing, the top electrode Ag was prepared on PZT by thermal evaporation, and then the Ag/PZT/YBCO/Si structured thin films were obtained. The XRD and the analysis of their electrical characters showed that, when the substrate temperature was elevated from 600 °C to 800 °C, the crystallinity and electrical properties of PZT thin films became better and better, and the F_R(LT)–F_R(HT) phase transition of PZT (x = 0.93) thin films occurred at 62 °C. The PZT film deposited at 800 °C had the best pyroelectric properties, and when the F_R(LT)–F_R(HT) phase transition of this film occurred, the peak value of pyroelectric coefficient (p) was obtained, with a value of 1.96 × 10⁻⁶ C/(cm² K). The PZT film deposited at 800 °C had the highest remnant polarization (P_r) and the lowest coercive field (E_c), with the values of 34.3 μC/cm² and 41.7 kV/cm respectively.     

Effect of elevated concentrations of strontium and iron on the structural and dielectric characteristics of Ba(1−x−y)Sr(x)Ti Fe(y)O3 prepared through sol–gel technique

Nano-composite Ba_1−xSr_(x)TiO₃ (BST), where x=0.01–0.50 and doped with different concentrations of iron Ba_(1−x−y)Sr_(x)TiFe _(y)O₃ (BSTF), where x=0.01 and y=0.01–0.05 powders were prepared by sol–gel method.     

Fourier Transform Infrared Emission Spectroscopy of thebΠ–aΣSystem of BN

The emission spectrum of BN has been investigated in the 1800–9000 cm⁻¹region using a Fourier transform spectrometer. BN was formed in a microwave discharge of He with a trace of BCl₃and N₂. The bands observed in the 3000–7800 cm⁻¹interval have been assigned as theb¹Π–a¹Σ⁺transition, with the 0–0 band at 3513.99040(43) cm⁻¹. This transition is analogous to theA¹Π_u–X¹Σ⁺_g(Phillips) system of the isoelectronic C₂molecule. The rotational analysis of the 0–0, 1–1, 1–0, 2–1, 3–2, 2–0, 3–1, 4–2, and 4–1 bands has been obtained and the molecular constants for theb¹Π anda¹Σ⁺states have been determined. A local perturbation has been observed in thev= 1 vibrational level of theb¹Π state nearJ= 18 caused by the interaction with thev= 3 vibrational level of thea¹Σ⁺state. The principal equilibrium constants for thea¹Σ⁺state are: ω_e= 1705.4032(11) cm⁻¹, ω_ex_e= 10.55338(52) cm⁻¹,B_e= 1.683771(10), α_e= 0.013857(16) cm⁻¹, andr_e= 1.2745081(37) Å. Although theb¹Π–a¹Σ⁺transition has recently been seen in emission from boron nitride trapped in solid neon matrices [J. Chem. Phys.104,3143–3146 (1996)], our work represents the first observation of this transition of BN in the gas phase.     

High-temperature electrical properties of magnesiowustite Mg1 − xFexO and spinel Fe3 − x − yMgxCryO4 ceramics

Phase relationships, thermal expansion and electrical properties of Mg_1 − xFe_xO (x = 0.1-0.45) cubic solid solutions and Fe_{3 − x − y}Mg_xCr_yO_4 ± δ (x = 0.7-0.95; y = 0 or 0.5) spinels were studied at 300-1770 K in the oxygen partial pressure range from 10 Pa to 21 kPa. Increasing iron content enlarges the spinel phase stability domain at reduced oxygen pressures and elevated temperatures. The total conductivity of the spinel ceramics is predominantly n-type electronic and is essentially p(O₂)-independent within the stability domain. The computer simulations using molecular dynamics technique confirmed that overall level of ion diffusion remains low even at high temperatures close to the melting point. Temperature dependencies of the total conductivity in air exhibit a complex behavior associated with changing the dominant defect-chemistry mechanism from prevailing formation of the interstitial cations above 1370-1470 K to the generation of cation vacancies at lower temperatures, and with kinetically frozen cation redistribution in spinel lattice below 700-800 K. The average thermal expansion coefficients of the spinel ceramics calculated from dilatometric data in air vary in the range (9.6-10.0) × 10^− 6 K^− 1 at 300-500 K and (13.2-16.1) × 10^− 6 K^− 1 at 1050-1370 K. Mg_1 − xFe_xO solid solutions undergo partial decomposition on heating under oxidizing and mildly reducing conditions, resulting in the segregation of spinel phase and conductivity decrease.     

Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

Influence of Cd and Cr substitutions on the magnetization and permeability of magnesium ferrites

Magnetization and permeability of polycrystalline ferrites with general formula Cd_xMg_1−xFe_2−yCr_yO₄ (x=0, 0.2, 0.4, 0.6, 0.8, 1.0; y=0, 0.05 and 0.10) were studied. Study of saturation magnetization reveals that the Neel's two-sublattice model exists upto x=0.4, for y=0, 0.05 and 0.1 and a three-sublattice model (YK-model) is predominant for x>0.4 and y=0, 0.05 and 0.10. The saturation magnetization and magnetic moment were found to decrease with the increase in Cr³⁺ contents, which is attributed to the dilution of B–B site interaction. Variation of initial permeability with temperature revealed the long-range ferromagnetic ordering in the compounds with x=0.4. The sample with x?0.4 and y=0, 0.05 and 0.10 showed peaking behavior near Curie temperature, which is attributed to the decrease of anisotropy constant K₁ to zero. Low-frequency dispersion of initial permeability suggests domain wall displacement. Addition of Cd²⁺ resulted in a sharp decrease in Curie temperature. With the addition of Cr³⁺, initial permeability was found to decrease.     

ESR and optical study of Cu-doped Bis(l-asparaginato)zinc(II)

The Electron spin resonance (ESR) study of Cu²⁺-doped Bis(l-asparaginato)zinc(II) has been done at room temperature. Two magnetically equivalent sites for Cu²⁺ have been observed. The spin-Hamiltonian parameters evaluated with the fitting of spectra to rhombic symmetry crystalline field are g_x=2.0341±0.0002, g_y=2.0649±0.0002, g_z=2.2390±0.0002, A_x=(51±2)×10⁻⁴ cm⁻¹, A_y=(75±2)×10⁻⁴ cm⁻¹and A_z=(169±2)×10⁻⁴ cm⁻¹. The ground state wave function of Cu²⁺ has also been determined. The g-anisotropy has been estimated and compared with the experimental value. Further with the help of optical study, the nature of bonding of metal ion with different ligands in the complex has been discussed.     

Clustering effects in optical properties of BGaAs/GaAs epilayers

We report on the further investigation of the effect of boron incorporation on GaAs grown at 580 °C temperature on GaAs (0 0 1) substrate by metal organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD) has been used to determine the lattice mismatch and to estimate the boron concentration. Temperature-dependent photoluminescence has been carried out to investigate B_xGa_1−xAs/GaAs epilayers with varied boron composition (x=1.64% and 3.04%). Low temperature (10 K) PL study has shown an asymmetric and broad PL band around 1.3 eV of the emission energies with a decrease of the PL intensity with increasing boron composition. The evolution of the emission energies with temperature can be described by Varshni law for the high temperature range (T?120 and 80 K) for boron composition x=1.64% and 3.04%, respectively, while a relative discrepancy has been found to occur at low temperature. Moreover, depending on the temperature range, the PL intensity quenching is found to be thermally ensured by three activation energies. These results are attributed to the localized states induced by the non-uniform insertion of boron and the clustering of the boron atom in BGaAs bulk.     

Composition stability limits for the rocksalt-structure phase (Pb1−ySny)1−xTex from lattice parameter measurements

The lattice parameters at 25°C have been measured on powders with a precision of one part in 3(10⁴) for (Pb_1−ySn_y)_1−xTe_x for y = 1·0, 0·90, 0·80,and0·00 and values of x both without and, for the first threey-values, within the composition stability range. For the first threey-values, the composition stability limits for samples metal-saturated at 400°C is 0·5000 ± 0·0002, while those for samples Te-saturated at 356°C is x = 0·5070fory = 1·0, x = 0·5056fory = 0·90,andx = 0·5038fory = 0·80. The fine powders pick up oxygen quickly in air, which reacts with the Pb and Sn upon heating to deplete the telluride solid-solution of metal and consequently reduce its parameter by 2–3(10⁻³)Å. The metals are substantially all returned to the telluride phase upon H₂-reduction at 500–600°C. The present results for SnTe are used to extend the sources of data used in an analysis of SnTe. This analysis shows that the ratio of the number of valence band holes per Sn-vacancy, c, to the 77°K Hall factor, r, is 3·2 ± 0·3 over the entire range of 3(10¹⁹) to 1·8(10²¹) cm⁻³ in the apparent hole concentration. The results for the solid solutions are extrapolated to give the atomic fraction of Te in the 356°C, Te-saturated solid solution for y < 0·8. Comparison with the electrical measurements of others gives c/r equal to about unity for y = 0·27and0·13.     

Luminescent properties of HTP AgGd1−xW2O8:Eux and AgGd1−x(W1−yMoy)2O8:Eux phosphor for white LED

Intense red phosphors, AgGd_1−xEu_x(W_1−yMo_y)₂O₈ (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd_1−xEu_xW₂O₈ synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW₂O₈. All phosphors compositions with Eu³⁺ show red and green emission on excitation either in the charge-transfer or Eu³⁺ levels. Analysis of the emission spectra with different Eu³⁺ concentrations reveal that the optimum dopant concentration for Eu³⁺ is x=0.6 in the HTP AgGd_1−xEu_xW₂O₈ (x=0.0-1.0). Studies on the AgGd_0.4Eu_0.6(W_1−yMo_y)₂O₈ (y=0.0-1.0) and AgGd_1−xEu_x(W_0.7Mo_0.3)₂O₈ (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo⁶⁺ and Eu³⁺ co-doped AgGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped AgGd(WO₄)₂ in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.     

White light emitting from single phased K2Ca1−x−yP2O7: xEu, yMn phosphors under UV excitation

A single phased white light emitting phosphors K₂Ca_1−x−yP₂O₇: xEu²⁺, yMn²⁺ were synthesized by solid state reaction method. The Effective energy transfer occurs in this phosphor due to the large spectral overlap between the emission of Eu²⁺ and the excitation of Mn²⁺. The emission hue of K₂Ca_1−x−yP₂O₇: xEu²⁺, yMn²⁺ from blue to white light can be obtained by tuning the Eu²⁺/Mn²⁺ content ratio. The energy transfer mechanism from Eu²⁺ to Mn²⁺ in this phosphor was carefully investigated and demonstrated to be via the dipole–quadrupole interaction.     

EPR and optical absorption studies on VO ions in zinc lactate trihydrate

EPR and optical absorption studies of VO²⁺-doped zinc lactate trihydrate single crystals are done at room temperature. The EPR spectra of VO²⁺ are characteristic of tetragonally compressed octahedral site. The angular variation of the EPR spectra shows single site occupying interstitial position in the lattice. The spin Hamiltonian parameters are evaluated as g_x=1.9771, g_y=2.0229, g_z=1.9236 and A_x=76, A_y=104, A_z=197 (×10⁻⁴) cm⁻¹. Using these parameters and optical absorption data various bonding parameters are determined and the nature of bonding in the complex is discussed.     

Photoionization cross-section and binding energy of shallow donor impurities in Ga1−xInxNyAs1−y/GaAs quantum wires

We have investigated the effects of the nitrogen and indium concentrations on the photoionization cross-section and binding energy of shallow donor impurities in Ga_1−xIn_xN_yAs_1−y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy.     

Low-temperature property investigation of the lead indium-niobate-lead nickel-niobate solid solution

The complex perovskite solid solution (1−x) Pb(In_1/2Nb_1/2)O₃-(x) Pb(Ni_1/3Nb_2/3)O₃ has been successfully prepared by the Columbite precursor method. The temperature dependencies of the dielectric constant and pyroelectric coefficient were measured between −261 and 200 °C. Relaxor ferroelectric behavior has been noticed in all compositions across the solid solution. The room-temperature electrostrictive coefficient, Q₃₃, was 1.83×10⁻² C²/m⁴ for x=0.10. No room-temperature piezoelectric activity was detected; however, upon cooling to −261 °C the maximum coupling coefficients k_p=29%, k_t=11%, and k₃₃=31% were observed for the composition x=1.00.