潜在超导母体材料LaOMnSe的第一性原理研究

通过第一性原理计算,我们研究了LaOMnSe的结构、电子性质和磁性质．我们发现LaOMnSe在11点附近存在三个类空穴费米面,在M点附近有两个类电子费米面．如果将类空穴费米面平移（π,π,O）,则类空穴费米面就会和类电子费米面在很大程度上重叠,这种费米面嵌套将会导致磁不稳定性和自旋密度波（SI）、V）,和LaOFeAs...     

BaTi_2Bi_2O的电子结构与磁性（英文）

采用第一性原理计算,我们对BaTi2Bi2O材料的电子结构和磁性做了详细的研究.其非磁性态的计算结果显示,费米能级处的态密度主要来自d2 z,d x2-y2和dxy三个轨道的电子.费米面主要有三部分组成,并且将其沿着矢量q1=(π/a,0,0)和q2=(0,π/a,0)平移时,第三部分费米面(沿着X-R连线)与第一部分费米面(M-A连线)a嵌套明显,计算得出磁化系数χ0(q)值出现在在X点出现峰值,这一点与峰M点的FeAs基超导体不同.上述磁化率峰值可以诱导产生自旋密度波,这使得BaTi2Bi2O的磁性基态是能量基本简并的bi-collinear antiferromagnetism(AF3)与blocked checkerboard antiferromagnetism(AF4)磁性态.随着空穴掺杂,χ0(q)的峰值降低并且变得有些不对称,而电子掺杂则导致峰值变大.一般认为超导序和磁性序相互竞争,当自旋涨落被完全压制时,超导出现,这正好可以解释为什么超导只能出现在空穴掺杂型化合物而非电子掺杂型里.     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识.铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究;实验上也没有清晰地观测到自旋极化量子阱态的隧穿.文章介绍了最近由卢仲毅、张晓光和Pantelides［1］预言的Fe/MgO/FeO/Fe/Cr和其他铁磁量子阱隧道结中的共振隧穿,并解释铁、钴、铬的Δ1能带的对称性在这种共振隧穿中的作用.     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识．铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究；实验上也没有清晰地观测到自旋极化量子阱态的隧穿．文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe／MgO／FeO／Fe／Cr和其他铁磁量子阱隧道结中的共振隧穿，并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用．     

Cr二维单层薄片中Jahn-Teller效应的第一性原理研究

采用基于密度泛函理论的第一性原理计算,本文对Cr单层薄片的一系列二维结构（长方、正方、六角、斜方和中心长方晶格）进行了结构稳定性和电子性质研究.结果表明,在Cr的二维体系中,对称性较低的斜方晶格和中心长方晶格是稳定的,对称性较高的正方和六角晶格是不稳定的,而长方晶格的形成能很小.Cr二维原子薄片的两种稳定结构都是六角结构畸变的结果,六角晶格的键角减小时会形变成斜方晶格,键角增大时会形变成中心长方晶格,这是由于Jahn-Teller效应使简并能级自发破缺,继而结构产生降低对称性的形变,最终使得体系变得稳定.     

过渡金属掺杂在Bi2Te3体系中诱导产生的磁性

用从头计算方法研究了在Bi₂Te₃体系采用过渡金属掺杂从而诱导出磁性的可能性．用一个过渡金属原子置换一个Bi原子之后,可以在该体系中产生磁矩,这主要是由于过渡金属原子的3d轨道电子的自旋极化导致的．当一个Ti、V、Cr、Mn和Fe原子分别替代一个Bi原子时,体系显示的磁矩分别为0.92、1.97、2.97、4.04和4.98 μ_B．当引入两个过渡金属原子代替两个Bi原子的时候,交换耦合的特性取决于取代Bi原子的分布;代替的Bi原子的位置在Bi1和Bi5的位置时,这两个过渡金属原子之间的距离为11.52 ?, Bi_1.84TM_0.16Te₃体系能量最稳定并且表现出铁磁性耦合．     

FeGe纳米线中外延应力导致的铁磁性

对在Ge(111)表面沿着＜11-0＞方向外延生长的单斜FeGe纳米线进行研究,结果发现,虽然块体单斜FeGe相是反铁磁性,其纳米线却在200 K以下表现出强铁磁有序.每个Fe原子的磁矩为0.8 μB.密度泛函计算揭示外延产生的晶格压缩使类派尔斯反铁磁基态失稳,从而稳定实验观察到的铁磁性.     

Heusler合金Mn2 NiAl的电子结构和磁性对四方畸变的响应及其压力响应

运用基于密度泛函理论的第一性原理的投影缀加波方法,对Hg₂CuTi型Mn₂NiAl在由立方结构至四方结构的畸变过程中电子结构和磁性的变化规律及其对压力响应的规律进行了研究.研究发现:在由奥氏体相到马氏体相的相变中,由于Ni-Mn(A)原子间距的减小而使得杂化程度增强,导致占据态的态密度向低能区域移动,体系的能量降低,致使在马氏体相中的稳定性增大;在从奥氏体相到马氏体相的相变中,能带变宽,成键作用加强,从而在马氏体相中的稳定性增大;在四方畸变过程中,总磁矩的变化主要来源于Ni原子磁矩的变化;计算得到Mn₂NiAl的零压体积弹性模量为125.69 GPa,其抗压缩性比其他常见的Heusler型合金弱. 关键词： 第一性原理 电子结构 磁性 四方畸变     

C2+4的几何构型和Jahn-Teller效应

用从头计算法GCISD/6-311G*得到了C2+4分子的10种不同的几何构型,基中包括Cs,C∞v,C2v,D2h,D∞h,D4h,D2d,C3v等不同的构型.计算表明C2+4的Td构型不能稳定存在,详细讲座了Td构型的Jahn-Teller效应.讨论结果显示它们的各种畸变方式都符合群的分解原理,从而证明了C2+4分子的Td构型的Jahn-Teller效应非常明显.D4构型也存在Jahn-Teller效应.     

C80n (D2,Ih)的Jahn-Teller畸变和电子光谱

用INDO系列方法研究C80n(D2,Ih)的Jahn-Teller畸变,表明C80(D2)比C80(Ih)稳定,与实验一致;C80n(D2)未发生Jahn-Teller畸变,C80n(Ih)的部分离子发生明显的Jahn-Teller畸变,电荷对C80(Ih)稳定性有显著影响.首次计算其电子光谱,不仅得到C80(D2)与实验一致的吸收峰,还预测了C80n(D2,Ih)的电子光谱,对电子跃迁进行理论指认.C80n(D2)光谱与C80(D2)相比发生吸收峰红移,而C80n(Ih)光谱与C80(Ih)相比发生吸收峰兰移,其原因是C80n(D2)的LUMO-HOMO能隙比C80(D2)小,而C80n(Ih)的能隙则比C80(Ih)的能隙大.     

GaAs中Cr2+离子的发光及杨—泰勒效应

在各向同性压力下,观察到77°K时n—GaAs样品中Cr2+离子的光致发光。这个光谱带是由Cr2+离子的激发态5E到基态5T2的跃迁所致。由于Cr2+离子在晶体场中有较强的杨一泰勒效应,时发光光谱产生影响。本文考虑静态杨一泰勒效应计算了发射光潴,估计了杨一泰勒能量,并与实验结果相比较。     

Structural,elastic and thermodynamic properties under pressure and temperature effects of MgIn2S4 and CdIn2S4

A density functional-based method is used to investigate the structural, elastic and thermodynamic properties of the cubic spinel semiconductors MgIn₂S₄ and CdIn₂S₄ at different pressures and temperatures. Computed ground structural parameters are in good agreement with the available experimental data. Single-crystal elastic parameters are calculated for pressure up to 10 GPa and temperature up to 1200 K. The obtained elastic constants values satisfy the requirement of mechanical stability, indicating that MgIn₂S₄ and CdIn₂S₄ compounds could be stable in the investigated pressure range. Isotropic elastic parameters for ideal polycrystalline MgIn₂S₄ and CdIn₂S₄ aggregates are computed in the framework of the Voigt–Reuss–Hill approximation. Pressure and thermal effects on some macroscopic properties such as lattice constant, volume expansion coefficient and heat capacities are predicted using the quasi-harmonic Debye model in which the lattice vibrations are taken into account.     

Single crystal growth,electronic structure and optical properties of Cs2HgBr4

We report on successful synthesis of high-quality single crystal of cesium mercury tetrabromide, Cs₂HgBr₄, by using the vertical Bridgman–Stockbarger method as well as on studies of its electronic structure. For the Cs₂HgBr₄ crystal, we have recorded X-ray photoelectron spectra for both pristine and Ar⁺ ion-bombarded surfaces. Our data indicate that the Cs₂HgBr₄ single crystal surface is rather sensitive with respect to Ar⁺ ion-bombardment. In particular, such a treatment of the Cs₂HgBr₄ single crystal surface alters its elemental stoichiometry. To explore peculiarities of the energy distribution of total and partial densities of states within the valence band and the conduction band of Cs₂HgBr₄, we have made band-structure calculations based on density functional theory (DFT) employing the augmented plane wave+local orbitals (APW+lo) method as incorporated in the WIEN2k package. The APW+lo calculations allow for concluding that the Br 4p states make the major contributions in the upper portion of the valence band, while its lower portion is dominated by contributors of the Hg 5d and Cs 5p states. Further, the main contributors to the bottom of the conduction band of Cs₂HgBr₄ are the unoccupied Br p and Hg s states. In addition, main optical characteristics of Cs₂HgBr₄ such as dispersion of the absorption coefficient, real and imaginary parts of dielectric function, electron energy-loss spectrum, refractive index, extinction coefficient and optical reflectivity have been explored from the first-principles band-structure calculations.     

First-principles calculations of electronic, optical and elastic properties of ZnAl2S4 and ZnGa2O4

The optimized crystal structures, band structures, partial and total densities of states (DOS), dielectric functions, refractive indexes and elastic constants for ZnAl₂S₄ and ZnGa₂O₄ were calculated using the CASTEP module of Materials Studio package. Pressure effects were modeled by performing these calculations for different values of external hydrostatic pressure up to 50 GPa. Obtained dependencies of the unit cell volume on pressure were fitted by the Murnaghan equation of state, and the relative changes of different chemical bond lengths were approximated by quadratic functions of pressure. Variations of applied pressure were shown to produce considerable re-distribution of the electron densities around ions in both crystals, which is evidenced in different trends for the effective Mulliken charges of the constituting ions and changes of contour plots of the charge densities. The longitudinal and transverse sound velocities and Debye temperatures for both compounds were also estimated using the calculated elastic constants.     

Ab initio predicted elastic and thermodynamic properties of Imm2-BN under high pressure

The structural parameters, elastic constants, thermodynamic properties of Imm2-BN under high pressure were calculated via the density functional theory in combination with quasi-harmonic Debye approach. The results showed that the pressure has the significant effect on the equilibrium lattice parameters, elastic and thermodynamic properties of Imm2-BN. The obtained ground state structural parameters are in good agreement with previous theoretical results. The elastic constants, elastic modulus, and elastic anisotropy were determined in the pressure range of 0–90?GPa. Furthermore, by analyzing the B/G ratio, the brittle/ductile behavior under high pressure is evaluated and the elastic anisotropy of the Imm2-BN up to 90?GPa is studied in detail. Moreover, the pressure and temperature dependence of thermal expansion coefficient, heat capacity, Debye temperature, and Grüneisen parameter are predicted in a wide pressure (0–90?GPa) and temperature (0–1600?K) ranges. The obtained results are expected to provide helpful guidance for the future synthesis and application of Imm2-BN.     

旋转进口畸变条件下轴流压气机叶顶间隙流非定常特征及其与旋转失速的关联性研究

本文采用数值模拟和实验测量相结合的方法,以叶顶间隙流的非定常流场特征为切入点,系统地研究了畸变情况下轴流压气机旋转失速的触发机理.研究结果表明:畸变影响区内叶片负载明显高于非畸变影响区;畸变影响区内逆压梯度的增大使得叶顶泄漏涡轨迹前移,当节流到一定程度时,叶顶泄漏流溢出,形成类尖脉冲扰动,类尖脉冲扰动的间歇性发展,最终诱发旋转失速.