Band gap variation in laser irradiated polytypic crystals of cadmium iodide

Highly purified single crystals of cadmium iodide obtained through repeated zone refining have been subjected to laser beam exposure (Argon ion laser), both for various time durations and to various beam intensities, and then subjected to band gap determination by UV spectroscopy. The band gap has been found to decrease gradually with increase in the laser beam intensity, whereas its variation with increase in time of exposure shows an unusual behaviour such that it initially falls sharply followed by a gradual rise back to its original value. The results have been analysed and interpreted in terms of indirect band gap character of the material and an unusual variation in phonon frequency. The interpretation is well supported by X-ray diffraction and scanning electron microscopy (SEM) studies. Received: 26 May 1997 / Revised: 6 August 1997 / Accepted: 15 September 1997     

Minimal conductivity in bilayer graphene

Using the Landauer formula approach, it is proven that minimal conductivity of order e²/h found experimentally in bilayer graphene is an intrinsic property. For the case of ideal crystals, the conductivity turns out to be equal to e²/2h per valley per spin. A zero-temperature shot noise in bilayer graphene is considered and the Fano factor is calculated. Its value 1–2/π is close to the value 1/3 found earlier for single-layer graphene.     

Atomic Rayleigh scattering cross-sections and the associated anomalous dispersion in the X-ray regions

Elastic scattering cross-sections for Pd, Ag, Cd, In, Sn, Sb, Pt, Au and Pb are measured at an angle of 90 in the X-ray region 5.41 keV. These energies fall between the high-energy side of the L- and M-shell absorption edges of the atoms considered. The present atomic region is significant for solid X-rays to assess the contribution of resonance and solid-state environmental effects. Also it is the anomalous scattering region for many of the atoms of the periodic table. Experimental results are compared with theoretical calculations based on form factor formalisms including the anomalous corrections and available recent S-matrix values. Based on the experimental evidence, the present results indicate the influence of solid-state environmental effects, the importance of anomalous corrections nearer to absorption edges, the correctness of revised high-energy limit values, the superiority of S-matrix predictions over form factor values on measured elastic scattering cross-sections in the X-ray regime and also show the resonance behavior around K, L and M absorption edges. Received: 27 January 1998 / Received in final form: 4 January 1999     

Synthesis and magnetic properties of Ni-doped zinc oxide powders

Polycrystalline Zn_1−xNi_xO diluted magnetic semiconductors have been successfully synthesized by an auto-combustion method. X-ray diffraction measurements indicated that the 5 at% Ni-doped ZnO had the pure wurtzite structure. Refinements of cell parameters from powder diffraction data revealed that the cell parameters of Zn_0.95Ni_0.05O were a little bit larger than ZnO. Transmission electron microscopy observation showed that the as-synthesized powders were of the size ∼60 nm. Magnetic investigations showed that the nanocystalline Zn_0.95Ni_0.05O possessed room temperature ferromagnetism with the saturation magnetic moment of 0.1 emu/g (0.29 μ_B/Ni²⁺).     

Influence of acceptor impurities on semi-insulating GaAs particle detectors

GaAs Schottky diodes, made on semi-insulating liquid encapsulated Czochralski grown material with concentrations of acceptor dopants varying from 10¹⁴ to 10¹⁷ cm^-3, were investigated as alpha particle detectors. The charge collection efficiency (CCE) was found to decrease dramatically with increasing . Optical spectra in transmittance and reflectance were accurately measured to determine the concentrations of both neutral and ionised EL2 defects as a function of . The concentration of ionised EL2⁺ centres was shown to increase with , and to be quasi inversely proportional to the CCE values. This behaviour strongly supports the hypothesis that the EL2 defects play the main role in the compensation of the material and in limitation of the detection properties. Received 21 March 2000     

High quality CVD diamond: a Raman scattering and photoluminescence study

High quality synthetic diamonds were grown on single-crystal silicon by microwave plasma enhanced chemical vapour deposition (CVD). A careful optimisation of both the experimental setup and the growth parameters was necessary before that the achievement of the best results was made possible. The films were deposited using a CH₄-H₂ gas mixture at methane concentrations variable in the range 0.6-2.2%, while the substrate temperature was fixed at 750 ^°C. Raman spectroscopy and photoluminescence (PL) were utilised to monitor the quality of the deposited films and to study the spatial distribution of defects, respectively. Micro-Raman analysis shows that linewidths of the diamond peak lower than 2.4 cm^-1 can be easily measured at the growth surface, indicating that the crystalline quality of individual grains is comparable to that of the best natural diamonds. The excellent phase purity of the diamond microcrystals at the growth surface is witnessed by the complete absence of any non-diamond carbon feature and by a very weak luminescence background in the 1.6-2.4 eV spectral range. A worsening of the quality of the diamond particles is found moving from the growth surface towards the film-substrate interface. A photoluminescence feature at about 1.68 eV, commonly associated to Si impurities, is distinctly observed as the exciting laser beam is focused close to the interface. A progressive degradation of the global quality of the films is found with increasing methane concentration in the gas mixture, as witnessed by an increased PL background in the films grown at higher methane concentrations. Received 24 November 2000     

Zitterbewegung, chirality, and minimal conductivity in graphene

It has been recently demonstrated experimentally that graphene, or single-layer carbon, is a gapless semiconductor with massless Dirac energy spectrum. A finite conductivity per channel of order of e²/h in the limit of zero temperature and zero charge carrier density is one of the striking features of this system. Here we analyze this peculiarity based on the Kubo and Landauer formulas. The appearance of a finite conductivity without scattering is shown to be a characteristic property of Dirac chiral fermions in two dimensions.     

Conductance quantization in graphene nanoribbons: adiabatic approximation

A theory of electron states for graphene nanoribbons with a smoothly varying width is developed. It is demonstrated that the standard adiabatic approximation allowing to neglect the mixing of different standing waves is more restrictive for the massless Dirac fermions in graphene than for the conventional electron gas. For the case of zigzag boundary conditions, one can expect a well-pronounced conductance quantization only for highly excited states. This difference is related to the relativistic Zitterbewegung effect in graphene.     

Combined effects of electric and magnetic fields on confined donor states in a diluted magnetic semiconductor parabolic quantum dot

A variational formalism for the calculation of the binding energies of hydrogenic donors in a parabolic diluted magnetic semiconductor quantum dot is discussed. Results are obtained for Cd Mn Te/Cd Mn Te structures as a function of the dot radius in the presence of external magnetic and electric fields applied along the growth axis. The donor binding energies are computed for different field strengths and for different dot radii. While the variation of impurity binding energy with dot radii and electric field are as expected, the polarizability values enhance in a magnetic field. However, for certain values of dot radii and in intense magnetic fields the polarizability variation is anomalous. This variation of polarizability is different from non- magnetic quantum well structures. Spin polaronic shifts are estimated using a mean field theory. The results show that the spin polaronic shift increases with magnetic field and decreases as the electric field and dot radius increase.     

Space-time dispersion of graphene conductivity

We present an analytic calculation of the conductivity of pure graphene as a function of frequency ω, wave-vector k, and temperature for the range where the energies related to all these parameters are small in comparison with the band parameter γ≃3 eV, but much larger than the collision rate τ^-1. The simple asymptotic expressions are given in various limiting cases. For instance, the conductivity for kv₀≪ T≪ω is equal to σ(ω,k)=e²/4ħ and independent of the band structure parameters γ and v₀. Our results are also used to explain the known dependence of the graphite conductivity on temperature and pressure.     

Splitting of the Cr 2p ions states in some ternary sulphides and selenides

X-ray photoelectron spectroscopy was used to investigate ACr₂S₄ (, Zn, Mn, Fe, Fe:Cu) and BCr₂Se₄ (, Cu, Hg, Hg:Cu) single crystals. Well defined splitting of the Cr 2p core level has been found. The local magnetic moments of the Cr ions are responsible for the observed effect. Received 2 November 1999     

Anisotropic emission of interface fluctuation quantum dots

We calculate energy levels, dipole moments and radiative broadening of interface fluctuation quantum dots. For optically allowed states, the dipole moment grows proportionally to the lateral quantum dot radius while the radiative broadening saturates towards the quantum well radiative broadening for large lateral quantum dot radii. This is accompanied by a change in the angular emission pattern, concentrating emission in forward and backward direction. Optically forbidden states do not couple to light propagating in the growth direction yet they may have a considerable radiative broadening due to spontaneous emission in other directions. Received 20 March 2002 Published online 25 June 2002     

Structural and magnetic properties of Mg(In2−xMnx)O4 system

We synthesized the Mn-doped Mg(In_2−xMn_x)O₄ oxides with 0.03?x?0.55 using a solid-state reaction method. The X-ray diffraction patterns of the samples were in a good agreement with that of a distorted orthorhombic spinel phase. Their lattice parameters and unit-cell volumes decrease with x due to the substitution of the smaller Mn³⁺ ions to the larger In³⁺ ions. The undoped MgIn₂O₄ oxide presents diamagnetic signals for 5 K?T?300 K. The M(H) at T=300 K reveals a fairly negative-sloped linear relationship. Neither magnetic hysteresis nor saturation behavior was observed in this parent sample. For the Mn-doped samples, however, positive magnetization were observed between 5 and 300 K even if the x value is as low as 0.03. The mass susceptibility enhances with Mn content and it reaches the highest value of 1.4×10⁻³ emu/g Oe (at T=300 K) at x=0.45. Furthermore, the Mn-doped oxides with x=0.06 and 0.2, respectively, exhibit nonlinear magnetization curves and small hysteretic loops in low magnetic fields. Susceptibilities of the Mn-doped samples are much higher than those of MnO₂, Mn₂O₃ oxides, and Mn metals. These results show that the oxides have potential to be magnetic semiconductors.     

Ab initio calculation and analysis of the properties of digital magnetic heterostructures and diluted magnetic semiconductors of IV and III-V groups

We present the first-principles calculations of digital magnetic heterostructures Si/M, Ge/M. GaAs/M, GaSb/M, GaN/M and GaN/M (50%) with M=Cr, Mn, Fe, and Co. The interaction between magnetic dopants results in a wide spin-polarized two-dimensional band inside the gap. It is found that beginning occupation of the minority-spin band greatly increases the energy of the ferromagnetic (FM) state and leads, as a rule, to the antiferromagnetic (AFM) spin ordering. This mechanism causes transition to the AFM state, when interaction between magnetic atoms is too strong, and defines the optimum of Curie temperature as a function of transition element concentration in magnetic layers.     

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230  ^°C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers.     

Structure and magnetic properties of the oxide layers on iron ultrafine particles

5 . The γ-Fe particles, because of their paramagnetic nature, are very convenient for investigation on the attributes of iron oxide layers formed on the particle surfaces. Structures, morphologies and magnetic properties of the oxide layers covering the iron ultrafine particles have been studied using transmission electron microscopy observation, magnetic property measurement, X-ray diffraction and annealing treatment. Convincing evidences established that the iron oxide layers are not continuous and consist of very fine crystallites, and that these layers are non-ferromagnetic and have no contribution to the saturation magnetization of the iron particles. The iron oxide layers formed at room temperature was determined to be Fe₃O₄. Additionally, a brief annealing of the iron particles in air were performed to examine magnetic properties of the formed iron oxide layers and ultrafine oxide particles. Received: 30 April 1996/Accepted: 5 November 1996     

Synthesis and magnetic properties of Zn1−xMnxO films prepared by the sol-gel method

We report on the ferromagnetic characteristics of Zn_1−xMn_xO films (x=0.1-0.3) prepared by the sol-gel method on silicon substrates using transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry at various temperatures. Magnetic measurement show that the Curie temperature (T_C) and the coercive field (H_C) were ∼39 K and ∼2100 Oe for the film of x=0.2, respectively. EDS and TEM measurements indicate that Mn content at the interface is significantly higher than that at the center of the Zn_0.8Mn_0.2O film showing the ratio, Zn:Mn:O≅1:12:15. This experimental evidence suggests that ferromagnetic precipitates containing manganese oxide may be responsible for the observed ferromagnetic behavior of the film.     

Localization and dephasing driven by magnetic fluctuations in low carrier density colossal magnetoresistance materials

Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the “mobility edge”, which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the “mobility edge” crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores. Received 17 January 1999 and Received in final form 12 March 1999     

Morphology and electronic structure of nanostructured carbon films embedding transition metal nanoparticles

Inclusions of metals in the growth process of carbon cluster assembled materials (ns-C) induce modifications in the structural and electronic properties of the material. A novel pulsed microplasma cluster source (PMCS) is able to deliver highly intense, collimated and stable beams suitable for producing bulk quantities of cluster-assembled nanocomposite films. Loading of metal nanoparticles into carbon cluster based films is obtained either by mixing a gas phase metallorganic compound with the carrier gas (He) before entering into the source (for example molybdenum (V) isopropoxide), or by using a double component sputtering target (metal (Ti, Ni)/graphite). The study of film morphology on nanometer scale, carried out by transmission electron microscopy (TEM), reveals the dispersion in a ns-C matrix of metallic particles and, in the case of molybdenum containing films, also of carbide particles. Spatially resolved ultraviolet photoemission spectroscopy confirms the segregation of metal particles and exhibits evident anisotropy in the Mo:ns-C films, mainly ascribable to the formation of carbide nanoparticles.     

Effect of annealing on the electric and magnetic properties of GaMnAs and Be-codoped GaMnAs

GaMnAs and Be-codoped GaMnAs films grown via molecular beam epitaxy (MBE) were heat treated and the stability of Mn in the matrix was investigated. MnAs had a stable phase at the low growth temperature, but MnGa was stable at the annealing temperature. Be-codoping did not prevent the precipitation processes, but Be itself was stable during the annealing process to maintain the GaAs matrix at the high conductivity.