共查询到19条相似文献,搜索用时 62 毫秒
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在不同实验条件下,用微波等离子体化学气相沉积设备在硬质合金(WC+6%Co)衬底上沉积了 具有不同结构特征的金刚石薄膜.用Raman谱表征薄膜的品质和应力,用压痕实验表征薄膜的 附着性能,考察了薄膜中sp2杂化碳含量、形核密度、薄膜厚度对薄膜附着性能 的影响.结 果表明:sp2杂化碳的缓冲作用使薄膜中sp2杂化碳的含量对薄膜中 残余应力有较大的影 响,从而使薄膜压痕开裂直径统计性地随sp2杂化碳含量的增加而减小;仅仅依 靠超声遗 留的金刚石晶籽提高形核密度并不能有效改变薄膜与硬质合金基体之间的化学结合状况,从 而不能有效提高薄膜在衬底上的附着性能;在薄膜较薄时,晶粒之间没有压应力的存在,开 裂直径并不明显随厚度增加而增加,只有当薄膜厚度增加到一定值,晶粒之间才有较强压应 力存在,开裂直径随厚度的增加而较为迅速地增加.
关键词:
金刚石薄膜
附着性能
2杂化碳')" href="#">sp2杂化碳
成核密度
薄膜厚度 相似文献
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在纳米金刚石薄膜中注入剂量为1012cm-2的氧离子,并进行700,800,900和1000?C的真空退火处理,系统研究薄膜的微结构和电化学性能结果表明,氧离子注入未退火(O120)和氧离子注入1000?C退火(O121000)电极的电势窗口分别为4.60 V和3.61 V,远大于其他电极的电势窗口,并且这两个样品的电极传质效率较高,说明氧离子注入和高温退火有利于提高电极的传质效率.红外光谱测试表明,样品O120和O121000的表面没有碳氢基团终止层,而其他样品均含有氢终止层,说明氧离子注入和高温退火破坏了薄膜表面含碳氢基团的氢终止层,提高了薄膜的电化学性能Raman光谱测试结果表明,金刚石含量较高、内应力较小和非晶石墨相无序化程度较大的样品具有较好的电化学性能;并且薄膜晶界处的非晶碳的团簇数量或者尺寸减小,样品的电化学性能提高. 相似文献
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本文系统研究了氧离子注入剂量和退火温度对含有Si-V发光中 心的微晶金刚石薄膜的微结构和光电性能的影响. 结果表明, 氧离子注入并在较高温度退火有利于提高薄膜中Si-V中心的发光强度. 当氧离子注入剂量从1014 cm-2增加到1015 cm-2时, 薄膜中Si-V发光强度增强. Hall效应测试结果表明退火后薄膜的面电阻率降低. 不同温度退火时, 氧离子注入薄膜的Si-V发光强度较强时, 薄膜的面电阻率增加, 说明Si-V发光中心不利于提高薄膜的导电性能. Raman光谱测试结果表明, 薄膜中缺陷数量的增多会增强Si-V的发光强度, 而降低薄膜的导电性能.
关键词:
金刚石薄膜
氧离子注入
电学性能
Si-V缺陷 相似文献
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叙述了在GLZ-100E工业离子注入机上采用20~60 keV氮离子及氮分子离子注入人造金刚石晶体的实验研究。XPS分析表明,注入离子在人造金刚石颗粒表面形成了一层较为稳定的含氮混合物层。高温差热分析(DTA)的实验表明,经氮离子束处理的金刚石,其氧化起始温度T(onset)由原来的730 ℃左右提高到800 ℃以上,且随着氮注入剂量的增加而增加,氧化速度也随之变缓;差热分析还表明,随着温度的升高,金刚石首先转化为石墨(DTA曲线上表现为吸热),然后氧化燃烧生成CO2(放热),而注入离子能量的增加,氧化温度的提高幅度略有下降。离子注入还使其高温石墨化性能显著改善。 相似文献
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用旋涂法在金属钛衬底上涂敷纳米金刚石,经过适当的热处理形成金刚石涂层与金属钛衬底的化学键合,即形成衬底与涂层之间的过渡层,从而为纳米金刚石颗粒提供电子,使其成为有效的发射体。用扫描电镜、原子力显微镜、X射线衍射和拉曼散射等手段分析了温度对键合效果以及场发射性能的影响,温度过高或过低都不利于提高纳米金刚石涂层的场发射性能,只有在700℃左右对样品进行热处理,才能得到较好的键合状态。改变涂膜时旋涂的次数以获得不同涂层厚度的样品,对其在700℃的相同温度下进行热处理,发现涂层过厚或过薄都不利于样品发射性能的提高。旋涂9次并于700℃热处理的样品具有较好的场发射性能,其发射阈值场强可达4.6V/μm,而15.3V/μm场强下的电流密度为59.7μA/cm2。 相似文献
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不同剂量的N离子被注入到化学气相沉积金刚石膜内,研究了表面结构及场发射特性的变化.Raman谱和x射线光电子能谱分析表明,N离子的注入破坏了金刚石膜表面原有的sp3结构,并在膜内形成大量的sp2 C—C 和sp2 C—N 键.样品的场发射测试显示N离子的注入显著提高了金刚石膜场发射特性,膜的场发射阈值电场从注入前的18 V/μm下降到注入后的4 V/μm.金刚石膜场发射特性的提高归因于N离子注入后膜内sp2 C键含量的增加和体内缺陷带的形成,这些变化能改变膜的表面功函数,提高Feimi能级,降低电子隧穿表面的能量势垒.
关键词:
场致电子发射
N离子注入
金刚石膜
热丝化学气相沉积 相似文献
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系统研究了磷离子注入并在不同温度退火后的纳米金刚石薄膜的微结构和电学性能.研究表明,当退火温度达到800 ℃以上时,薄膜呈良好的n型电导.Raman光谱和电子顺磁共振谱的结果表明,薄膜中金刚石相含量越高和完整性越好,薄膜电阻率越低. 这说明纳米金刚石晶粒为薄膜提供了电导.1000 ℃退火后,薄膜晶界中的非晶石墨相有序度提高,碳悬键数量降低,薄膜电阻率升高.薄膜导电机理为磷离子注入的纳米金刚石晶粒提供了n型电导,非晶碳晶界为其电导提供了传输路径.
关键词:
纳米金刚石薄膜
n型
磷离子注入 相似文献
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在微波等离子体化学气相沉积装置中,采用负偏压形核等方法,研究两种不同的W过渡层/基体结合界面对金刚石薄膜与WC-6%Co附着力的影响。采用氢等离子体脱碳、磁控溅射镀W、高偏压碳化等方法,在YG6衬底表面形成化学反应型界面,W膜在碳化时和基体WC连为一体,极大地增加了W膜与基体的附着力,明显优于直接镀钨、碳化形成的物理吸附界面。在高负偏压下碳化,能提高表面粗糙度,增加膜与基体机械钳合,而负偏压形核增加核密度,从而增加膜与基体的接触面积,结果极大地提高了金刚石薄膜的附着力。 相似文献
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The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing
box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance Rsh are 30~kΩ /□ and 4.9~kΩ/□ and the values of specific contact resistance ρc of ohmic contacts are 7.1× 10-4Ω.cm2 and 9.5× 10-5Ω.cm2 for the implanted layers with
implantation performed three and four times respectively. 相似文献
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The promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor
manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings,
etching of semiconductors, promotion of organic reactions, etching of polymers to improve bonding of the other materials etc.
With a 2.45 GHz. 700 W, microwave induced plasma chemical vapor deposition (CVD) system set up in our laboratory we have deposited
diamond like carbon coatings. The microwave plasma generation was effected using a wave guide single mode applicator. We have
deposited DLC coatings on the substrates like stainless steel, Cu-Be, Cu and Si. The deposited coatings have been characterized
by FTIR, Raman spectroscopy and ellipsometric techniques. The results show that we have achieved depositing ∼95% sp3 bonded carbon in the films. The films are unform with golden yellow color. The films are found to be excellent insulators.
The ellipsometric measurements of optical constant on silicon substrates indicate that the films are transparent above 900
nm. 相似文献
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利用低温显微荧光光谱研究了IIa型、Ib型、Ia型金刚石的缺陷发光性质. 研究发现, 随着氮含量增加, 间隙原子及空位逐渐被氮原子所束缚, 从而使得GR1中心、533.5 nm及580 nm中心等本征缺陷发光减弱, 而氮-空位复合缺陷(NV中心)及523.7 nm中心等氮相关缺陷发光增强. 高温退火后, 间隙原子与空位可以自由移动, IIa型金刚石中出现了NV0中心, Ib型金刚石中只剩下了NV中心, Ia型金刚石中氮原子之间发生团聚, 出现了H3中心及N3中心. 另外, 氮作为施主原子, 有利于负电荷缺陷的形成, 如3H 中心、NV- 中心. 相似文献
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To evaluate the effect of substrate morphology on the adhesion of diamond film, two types of substrate morphology of molybdenum (Mo) were compared. The two morphology types were formed by polishing a Mo substrate with SiC abrasive paper along one direction (anisotropic morphology) and by polishing the Mo substrate with diamond powder in a random direction (isotropic morphology).Ultrasonic cavitation tests were conducted to evaluate the adhesion of the diamond films on these Mo substrates. In the case of low surface roughness, there was very little difference between the effects of SiC abrasive paper polishing and diamond powder polishing. In the case of high surface roughness, the adhesion of the diamond film on the SiC paper polished Mo substrate was larger than that of the diamond film on the diamond powder polished Mo substrate. Detachment of the diamond film from the SiC paper polished Mo substrate progressed along the polishing direction; while detachment of the diamond film from the diamond powder polished Mo substrate progressed in a random direction. It was thought that the detachment of the diamond film from a Mo substrate having an anisotropic polishing trace was suppressed because the anisotropic grooves restricted the formation of connections between the points of detachment at right angles to the groove direction. Therefore, the anisotropic surface morphology of the Mo substrate is effective for improving the adhesion of diamond film. 相似文献
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D.W. Wheeler 《哲学杂志》2013,93(3):285-310
This paper describes a study of the behaviour of diamond coatings when subjected to solid particle erosion from sand particles. The coatings were deposited by chemical vapour deposition (CVD) onto tungsten substrates and tested using a high velocity air–sand erosion test facility. The erosion tests were conducted using particle impact velocities of between 33 and 268 m/s. Examination of the eroded test specimens showed that the principal damage features were circumferential cracks and pin-holes. Comparison with Hertz impact theory revealed that the measured circumferential crack diameters were more than double the predicted Hertzian contact diameter. Moreover, a trend of increasing circumferential crack diameter with coating thickness, which is not predicted by Hertz, was found. Instead, the crack diameters showed good agreement with those predicted by the theory of stress wave reinforcement, which is more commonly associated with liquid impact damage of brittle materials. During impact, the bulk compression and shear waves are reflected at the rear surface of debonded regions of the coating to return to the front surface and reinforce the Rayleigh surface wave, which generates a tensile stress. Where this stress exceeds the local tensile strength of the coating, a ring of cracks surrounding the area of impact is created. The results from the present study therefore suggest that stress wave reflection is responsible for the formation of the cracks at locally debonded regions of the coating. This hypothesis was supported by images acquired using scanning acoustic microscopy, which showed that circumferential cracks and pin-holes were only found on areas of the coating that had become delaminated by multiple particle impacts during the erosion tests. 相似文献