Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures

In this work, the investigation of the interface states density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics in Au/SnO₂/n-Si (MOS) structures prepared at various SnO₂ layer thicknesses by spray deposition technique have been reported. It is fabricated five samples depending on deposition time. The thicknesses of SnO₂ films obtained from the measurement of the oxide capacitance in the strong accumulation region for MOS Schottky diodes are 37, 79, 274, 401, and 446 Å, for D1, D2, D3, D4, and D5 samples, respectively. The C–V and G–V measurements of Au/SnO₂/n-Si MOS structures are performed in the voltage range from −6 to +10 V and the frequency range from 500 Hz to 10 MHz at room temperature. It is observed that peaks in the forward C–V characteristics appeared because of the series resistance. It has been seen that the value of the series resistance R_s of samples D1 (47 Ω), D2 (64 Ω), D3 (98 Ω), D4 (151 Ω), and D5 (163 Ω) increases with increasing the oxide layer thickness. The interface state density D_it ranges from 2.40×10¹³ cm⁻² eV⁻¹ for D1 sample to 2.73×10¹² cm⁻² eV⁻¹ for D5 sample and increases with increasing the oxide layer thickness.     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.     

The fabrication and characterization of ZnO UV detector

ZnO films were deposited on GaAs substrates by radio frequency (rf) magnetron sputtering followed by an ambient-controlled heat treatment process for arsenic doping. In Hall measurements, the As-doped ZnO films showed the characteristics of p-type semiconductor. The ZnO thin film p–n homojuctions were then fabricated to investigate the electrical properties of the films. The p–n homojunctions exhibited the distinct rectifying current–voltage (I–V) characteristics. The turn-on voltage was measured to be 3.0 V under the forward bias. When ultraviolet (UV) light (λ = 325 nm) was irradiated on the p–n homojunction, photocurrent of 2 mA was detected. Based on these results, it is proposed that the p–n homojunction herein is a potential candidate for UV photodetector and optical devices.     

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

The current–voltage (I–V) characteristics of Au/polyaniline(PANI)/p-Si/Al structures were determined at various temperatures in the range of 90–300 K. The evaluation of the experimental I–V data reveals a decrease of the zero-bias barrier height (BH) and an increase of the ideality factor (n) with decreasing temperature. It was shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH, increase of the ideality factor n due to barrier height imhomogeneities that prevail at the interface. A Φ_b0 versus 1/T plot has been drawn for evidence of the Gaussian distribution of the barrier height, and and σ₀ = 0.0943 V for the mean barrier height and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, a modified versus 1/T plot gives and A^* as 0.885 eV and A^* = 55.80 A/K² cm², respectively. Hence, it can be concluded that Au/PANI/p-Si/Al structure has a good rectifying contact and the temperature dependence of I–V characteristics of the rectifying contact on p-Si successfully have been explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.     

Electrical and XPS studies of 100 MeV Si ion irradiated Pd/n-GaAs devices

The effect of Swift Heavy Ion (100 MeV Si⁷⁺) irradiation on electronic-transport of Pd/n-GaAs devices has been studied by I–V and C–V techniques. The chemical compositions of the interface have been studied by XPS/EDAX techniques. It is observed that the irradiated devices show a reduction in current and capacitance by few orders of magnitude. The C–V characteristics show a change in conductivity type from n- to p-type after the irradiation. On hydrogenation, the irradiated devices show a capacitance peak in C–V characteristics, which has been ascribed to As vacancies. The XPS studies of these devices, for various etching durations, show that the ratio of As:Ga has reduced after the irradiation, which indicates the formation of irradiation-induced As vacancies. This reduction in As:Ga ratio is also confirmed by EDAX measurement. The observed conductivity type change from n- to p-type (on the irradiation) seems to be due to the change of substitutional sites of dopant silicon atoms from Ga to As sites due to the irradiation-induced As vacancies.     

Graduation of electron spectrometer intensity scale. Part 2. How to do it

Graduation function G(E′) absolute values have been determined experimentally for the first time for the intensity scale of an ordinary Auger electron spectrometer. The determination of G(E′) includes creation of an original standard signal and measurement of the consequent reaction of the spectrometer using a “giant rectangular modulation” operation mode, integration of the measurand, and use of an original G(E′) definition. The experimental values of G(E′) are presented in the correct dimensional units for a pass energy range E′ = 150–1000 eV. A non-monotonous behaviour of G(E′), a strong dependence of G(E′) on the multiplier entrance bias voltage, and a discrepancy between the graduation functions of spectrometers of the same type with CMA are demonstrated. Possibilities are predicted for a similar G(E′) determination for other types of spectromer.     

In situ synchrotron far infrared micro-spectroelectrochemistry with a grazing angle objective

We demonstrate the use of a grazing angle objective attachment to carry out in situ far infrared micro-spectroelectrochemistry at a copper electrode on a nano-scale. A thin-layer spectrochemical cell made out of Teflon was used, fitted with a 20-μm thick Mylar window; the working electrode was 500 μm in diameter. Measurements were carried out in 0.1 M NaOH solution as a function of applied potential between –1.4 and 0 V vs a Hg/Hg₂SO₄ reference electrode. Spectra were obtained with excellent signal to noise ratio for the surface oxide film, formed on copper electrochemically with less than 1 nL of active solution volume. The surface film at 0 V was about 130 nm thick and consisted mainly of CuO, with possibly some Cu(OH)₂ also present. This interpretation is consistent with previous works and thermodynamic calculations. The technique should be useful in other investigations and the further development of electrochemical surface science.     

基于石墨烯电极的齐聚苯乙炔分子器件的整流特性

以齐聚苯乙炔分子为研究对象,采用密度泛函理论与非平衡格林函数相结合的第一性原理方法,对基于石墨烯电极的齐聚苯乙炔分子器件整流特性进行了研究,系统地分析了官能团对分子器件整流特性的影响.通过研究发现,官能团对齐聚苯乙炔分子器件整流特性影响显著,当添加失电子官能团氨基(NH_2)时出现正向整流,添加得电子官能团硝基(NO_2)时出现反向整流,当同时添加氨基和硝基官能团时,会出现正反向整流交替现象,研究结果表明通过添加不同类型的官能团能有效控制分子整流器的整流特性.     

DNA-based organic-on-inorganic semiconductor Schottky structures

A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 × 10¹⁰ Ω cm representing a p-type conductivity.     

Analytical solution to a mode of mixed elastohydrodynamic lubrication with mixed contact regimes: Part I. Without consideration of contact adhering layer in the inlet zone

In 2005, Zhang presented a Grubin-like inlet zone analysis to the isothermal line contact elastohydrodynamic lubrication under relatively heavy loads when the hydrodynamic film thickness in the Hertzian zone approaches zero and the EHL fluid is Newtonian [Zhang, Y.B. A justification of the load-carrying capacity of elastohydrodynamic lubrication film based on the Newtonian fluid model. Industrial Lubrication and Tribology, 2005, Vol. 57, pp. 224–232]. His results showed that in this EHL, when the rolling speed is lower than the characteristic rolling speed (U_ch =) 0.0372W^1.50/G, the Hertzian zone is in physical adsorbed layer boundary lubrication while the inlet zone is in conventional hydrodynamic lubrication. This mode of EHL represents a mode of mixed EHL with mixed contact regimes, where hydrodynamic films with different rheological behaviors occur in different areas of the contact. The present paper presents an analysis to this mode of mixed EHL by using the Grubin type method when the contact adhering layer in the inlet zone is neglected. Pressures, film thicknesses and load partition in the contact are obtained from this analysis. It is also found that the formula for the characteristic rolling speed U_ch = 0.0372W^1.50/G obtained by Zhang [Zhang, Y.B. A justification of the load-carrying capacity of elastohydrodynamic lubrication film based on the Newtonian fluid model. Industrial Lubrication and Tribology, 2005, Vol. 57, pp. 224–232] may be valid for the dimensionless load W > 1.0E−7, while it may be invalid for the dimensionless load W < 1.0E−8. In part II [Zhang, Y.B. Analytical solution to a mode of mixed elastohydrodynamic lubrication with mixed contact regimes: Part II. Considering the contact adhering layer effect in the inlet zone. Journal of Molecular Liquids, 2006, Vol. 117. (doi:10.1016/j.molliq.2006.04.007)] will be presented an analysis to other two modes of mixed EHL with mixed contact regimes for relatively heavy loads, low rolling speeds and Newtonian fluids, where the conventional hydrodynamic lubrication, physical adsorbed layer boundary lubrication and oxidized chemical layer boundary lubrication can simultaneously occur in the inlet zone while the oxidized chemical layer boundary lubrication or the fresh metal-oxidized chemical boundary layer dry contact occur in the Hertzian zone, considering the contact adhering layer effect in the inlet zone.     

Properties of solvent-free perylene iodine

The perylene iodine system was prepared by a vapour-phase reaction without the use of solvents. Compositions between peryleneI₂ and peryleneI₆ were synthesized and studied by gravimetric analysis, infrared spectroscopy, X-ray diffraction and temperature-dependent resistivity measurements. Infrared spectra in the region 400–4000 cm⁻¹ taken after different amounts of iodine were removed from the sample are distinct from perylene with new absorption lines at 1551 and 1302 cm⁻¹ and shifts of some perylene frequencies. Powder X-ray diffraction measurements indicate that the lattice is monoclinic with parameters a=11.65 Å, b=10.85 Å, c=10.1 Å, β=100.5°. The (1 0 0) reflection, which is forbidden in the space group of perylene, is observed from the compound. The material is electrically conductive and obeys Ohm's law at high temperatures. At low temperatures and high currents, nonlinear effects are observed. The conductivity of the material increases to 1.0 (Ω cm)⁻¹ at room temperature as the iodine content increases to a composition of peryleneI₆. The resistivity obeys an exponential temperature dependence.     

光泵抽运3He极化程度监控系统的设计与实现

极化³He的一项重要应用是中子的极化.中国绵阳研究堆（CMRR）已建立国内首个自旋交换光学泵浦（SEOP）极化³He中子极化系统.为了监测³He的极化率随时间的相对变化情况,本文首先设计了基于核磁共振（NMR）技术的³He相对极化率测量系统,通过Matlab控制程序实现了对³He相对极化率的定时检测.然后对拾波线圈的构形和信噪比（SNR）进行了优化.结果表明当绕线长度一样时,Brooks构形的线圈有利于提高SNR;当线圈的平均半径为（a₀+d）/√2（a₀为³He气室的半径,d为拾波线圈与气室之间的距离）时,其SNR最高.最后对该系统的本底噪声进行了测量,发现其主要来源于环境噪声（0.27 μV/√Hz）和数据采集（DAQ）卡的噪声（0.40 μV/√Hz）,系统的总噪声功率谱密度约为√0.16+0.073G² μV/√Hz（G为放大器的增益倍数）.     

A conducting polymer-silicon heterojunction as a new ultraviolet photodetector

We discuss on the development and characterization of a p-n heterojunction of polyaniline-silicon as a photo detector for the ultraviolet (UV) region. The hybrid heterojunction consists of micro and nano-films (<300 nm thick) of polyaniline deposited on the top of a silicon wafer through the spin-coating technique, where in the backside of silicon and on top of polyaniline, aluminum and gold were respectively deposited by evaporation to make the electric contacts. The electrical characteristics of the devices present excellent reproducibility and high rectification ratio. In addition, the spectroscopic and the photon response analysis of the devices strongly indicates that it can be used as a broad band photon detector, with good sensitivity especially in the UV region ≈2.0-3.5 eV, where it presents enhanced sensitivity (≈200%) when compared to commercial all-silicon diodes such as the OPT 301 UV detector.     

MBE grown type-II MWIR and LWIR superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2–5 μm and 8–12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 10¹⁰ Jones with a differential resistance–area product greater than 6 Ohm cm² at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10–11 μm range. MWIR devices have produced detectivities as high as 8 × 10¹³ Jones with a differential resistance–area product greater than 3 × 10⁷ Ohm cm² at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2–3 μm range at low temperature and increases to over 60% near room temperature.     

Electro-optical characteristics and field-emission properties of reactive DC-sputtered p-CuAlO2+x thin films

P-type transparent-conducting CuAlO_2+x thin films were deposited on silicon and glass substrates by reactive direct current sputtering of a prefabricated metal powder target having 1:1 atomic ratio of Cu and Al in oxygen-diluted argon atmosphere. XRD spectrum confirmed the proper phase formation of the material. UV-Vis-NIR spectrophotometric measurements showed high transparency of the films in the visible region with direct and indirect band gap values around 3.90 and 1.89 eV, respectively. The room temperature conductivity of the film was of the order of 0.22 S cm⁻¹ and the activation energy was 0.25 eV. Seebeck coefficient at room temperature showed a value of +115 μV/K confirming the p-type nature of the film. Room temperature Hall effect measurement also indicated positive value of Hall coefficient with a carrier concentration 4.4×10¹⁷ cm⁻³. We have also observed the low macroscopic field emission, from the wide band gap p-CuAlO_2+x thin film deposited on glass substrate. The emission properties have been studied for different anode-sample spacing. The threshold field was found to be as low as around 0.5–1.1 V/μm. This low threshold is attributed primarily to the internal nanostructure of the thin film, which causes considerable geometrical field enhancement inside the film as well as at the film/vacuum interface.     

耦合形貌对Si4团簇电子输运影响的第一性原理计算

运用密度泛函理论与非平衡格林函数相结合的方法,对Si₄团簇与Au （100）-3×3两电极以顶位-顶位、顶位-空位、空位-空位三种形貌相连构成的Au-Si₄-Au纳米结点的拉伸过程进行第一性原理模拟,计算不同构型纳米结点在不同距离的电导和结合能.讨论耦合形貌、距离对结点电导的影响,结合能的计算表明三种不同耦合形貌结点存在稳定平衡结构,其平衡电导分别为0.71 G₀、0.96 G₀和2.44 G₀,且在-1.2 V~1.2 V的电压范围内,三种不同耦合形貌结点稳定结构表现出类似金属的导电特性,其I-V关系都近似为直线.计算结果表明Si₄团簇与电极的耦合形貌、两极距离对纳米结点电子输运有重要影响.     

Ti/Al p-GaN Schottky barrier height determined by C–V measurements

Data are presented on the rigorous method of capacitance–voltage (C–V) measurements to the barrier height of Ti/Al p-GaN Schottky junction. For a sample with Hall concentration of 5.5 × 10¹⁶/cm³ the upper limit of the modulation frequency leading the full response of the activated carriers is defined as 1.5 kHz from the capacitance versus modulation frequency (C–f) plot. The activation energy of the Mg acceptors determined from the temperature-dependent C–f plot is 0.12 eV. The barrier height estimated with this activation energy and the intercept voltage of the 1/C²–V plot drawn with the 1.5 kHz C–V data is 1.43 eV at 300 K and 1.41 eV at 500 K. This is the most reliable barrier height ever reported. A reliable room temperature C–V doping profile is demonstrated using the 1.5 KHz modulation, which is sensitive enough to resolve the presence of a 15 nm thin highly doped (8 × 10¹⁸/cm³) layer formed near the surface.     

Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Preferred crystal orientation and low electrical resistivity are required for ZrN_x films applied in electronic devices. In this paper, effects of N₂:(N₂+Ar) flow ratio (F(N₂)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N₂) (4–24%), the films show fcc NaCl structure. While for F(N₂) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N₂) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.     

Topology change and θ-vacua in 2D Yang-Mills theory

We discuss the existence of θ-vacua in pure Yang-Mills theory in two space-time dimensions. More precisely, a procedure is given which allows one to classify the distinct quantum theories possessing the same classical limit for an arbitrary connected gauge group G and compact space-time manifold M (possibly with boundary) possessing a special basepoint. For any such G and M it is shown that the above quantizations are in one-to-one correspondence with the irreducible unitary representations (IUR's) of π₁(G) if M is orientable, and with the IUR's of π₁(G)/2π₁(G) if M is non-orientable.     

Effect of heat-pretreatment of the graphite rod on the quality of SWCNTs by arc discharge

Single-walled carbon nanotubes (SWCNTs) have been synthesized in high yield by the dc arc discharge technique under heat-pretreatment of the graphite rod conditions. Before executing arc discharge, the graphite rods containing the catalysts were heat treated at 600, 700, 800 and 900 °C for 1–3 h, respectively. Effects of heat-pretreatment of the graphite rod on the quality of SWCNTs by arc discharge were investigated. The heat-treatment temperature and time were found to be crucial for a high yield of high-purity SWCNTs. Optimum parameter was found to be at the heat-treatment temperature of 800 °C for 2 h. The SWCNTs synthesized under the optimum condition have better field-emission characteristics. The turn-on field needed to produce a current density of 10 μA/cm² is found to be 1.9 V/μm and the threshold field where current density reaches 10 mA/cm² is 3.9 V/μm.