基于石墨烯-钙钛矿量子点场效应晶体管的光电探测器

以等离子增强化学气相沉积法制备的石墨烯作为导电沟道材料,将其与无机CsPbI_3钙钛矿量子点结合,设计并制备了石墨烯-钙钛矿量子点场效应晶体管光电探测器.研究和分析了石墨烯作为场效应晶体管的电学特性及其与钙钛矿量子点结合作为光电探测器的光电特性.结果表明,石墨烯在场效应晶体管中表现出良好的电学性质,其与钙钛矿量子点的结合对波长为400 nm的光辐射具有明显的光响应,在光强为12μW时器件光生电流最大为64μA,响应率达6.4 A·W~(-1),对应的光电导增益和探测率分别为3.7×10~4,6×10~7Jones(1 Jones=1 cm·Hz~(1/2)·W~(-1)).     

Hybrid structures based on quantum dots and graphene nanobelts

Optics and Spectroscopy - Luminescence and photoelectric properties of hybrid structures based on CdSe/ZnS quantum dots (QDs) and multilayer graphene have been investigated. A correlation between...     

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide(SiC)-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.     

SnS_2 quantum dots: Facile synthesis,properties,and applications in ultraviolet photodetector

Tin sulfide quantum dots(SnS_2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS_2 QDs are complicated and require a high temperature and high pressure environments; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS_2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green,and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS_2 QDs are studied. The synthesized SnS_2 QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS_2 QDs is fabricated and its J–V and C–V characteristics are also studied. The detector responds under λ = 365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 1011 Jones at room temperature. These results show the possible use of SnS_2 QDs in photodetectors.     

Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector

The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector, which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorption processes. However, the detailed mechanism is still not very clear. Herein, the properties of ZnO QDs and their photodetectors with different amounts of oxygen vacancy (V_O) defects controlled by hydrogen peroxide (H₂O₂) solution treatment have been investigated. After H₂O₂ solution treatment, V_O concentration of ZnO QDs decreased. The H₂O₂ solution-treated device has a higher photocurrent and a lower dark current. Meanwhile, with the increase in V_O concentration of ZnO QDs, the response speed of the device has been improved due to the increase of oxygen adsorption/desorption rate. More interestingly, the response speed of the device became less sensitive to temperature and oxygen concentration with the increase of V_O defects. The findings in this work clarify that the surface V_O defects of ZnO QDs could enhance the photoresponse speed, which is helpful for sensor designing.     

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 Na under 5 V bias, and is 15.3 Na under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with λ= 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with λ= 360 nm light increases when the bias voltage increases.     

Dual-wavelength ultraviolet photodetector based on vertical(Al,Ga)N nanowires and graphene

Due to the wide application of UV-A(320 nm–400 nm) and UV-C(200 nm–280 nm) photodetectors, dual-wavelength(UV-A/UV-C) photodetectors are promising for future markets. A dual-wavelength UV photodetector based on vertical(Al,Ga)N nanowires and graphene has been demonstrated successfully, in which graphene is used as a transparent electrode.Both UV-A and UV-C responses can be clearly detected by the device, and the rejection ratio(R254 nm/R450 nm) exceeds35 times at an applied bias of-2 V. The short response time of the device is less than 20 ms. Furthermore, the underlying mechanism of double ultraviolet responses has also been analyzed systematically. The dual-wavelength detections could mainly result from the appropriate ratio of the thicknesses and the enough energy band difference of(Al,Ga)N and Ga N sections.     

Quantum confinement in graphene quantum dots

By performing density functional theory calculations, we studied the quantum confinement in charged graphene quantum dots (GQDs), which is found to be clearly edge and shape dependent. It is found that the excess charges have a large distribution at the edges of the GQD. The resulting energy spectrum shift is very nonuniform and hence the Coulomb diamonds in the charge stability diagram vary irregularly, in good agreement with the observed nonperiodic Coulomb blockade oscillation. We also illustrate that the level statistics of the GQDs can be described by a Gaussian distribution, as predicted for chaotic Dirac billiards.

     

Recent progresses of quantum confinement in graphene quantum dots

Graphene quantum dots (GQDs) not only have potential applications on spin qubit, but also serve as essential platforms to study the fundamental properties of Dirac fermions, such as Klein tunneling and Berry phase. By now, the study of quantum confinement in GQDs still attract much attention in condensed matter physics. In this article, we review the experimental progresses on quantum confinement in GQDs mainly by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Here, the GQDs are divided into Klein GQDs, bound-state GQDs and edge-terminated GQDs according to their different confinement strength. Based on the realization of quasi-bound states in Klein GQDs, external perpendicular magnetic field is utilized as a manipulation approach to trigger and control the novel properties by tuning Berry phase and electron–electron (e–e) interaction. The tip-induced edge-free GQDs can serve as an intuitive mean to explore the broken symmetry states at nanoscale and single-electron accuracy, which are expected to be used in studying physical properties of different two-dimensional materials. Moreover, high-spin magnetic ground states are successfully introduced in edge-terminated GQDs by designing and synthesizing triangulene zigzag nanographenes.     

Substitutional impurity in the graphene quantum dots

The process of formation of the localized defect states due to substitutional impurity in sp²-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp² orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H₁₈C₅₁X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) ε_p energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.     

Bolometric effect in a waveguide-integrated graphene photodetector

Graphene is an alternative material for photodetectors owing to its unique properties.These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes.Unfortunately,due to the low absorption of light,the photoresponsivity of graphene-based photodetectors is usually low,only a few milliamps per watt.In this letter,we fabricate a waveguide-integrated graphene photodetector.A photoresponsivity exceeding0.11 A·W ~(-1) is obtained which enables most optoelectronic applications.The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect.Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A·W ~(-1).The absorption coefficient of the device is estimated to be 0.27 dB·μm ~(-1).     

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

An ultraviolet photodetector was fabricated based on Mg_0.07Zn_0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340?nm UV light with density of 1.33 mW/cm². The device showed a low dark current of about 3×10^-10 A and a high photo-dark current ratio of 1×10⁵ at -2 V bias. A narrowband photoresponse was observed from 300 to 400?nm and centered at 340?nm with a full width at half-maximum of only 30?nm. The maximum peak response is at 340?nm, which is 0.192 A/W at the bias of -1 V.     

Electron energy level statistics in graphene quantum dots

Motivated by recent experimental observations of size quantization of electron energy levels in graphene quantum dots [7] we investigate the level statistics in the simplest tight-binding model for different dot shapes by computer simulation. The results are in a reasonable agreement with the experiment which confirms qualitatively interpretation of observed level statistics in terms of “Dirac billiards” without taking into account many-body effects. It is shown that edge effects are in general sufficient to produce the observed level distribution and that even strong bulk disorder does not change the results drastically. The article is published in the original.     

Electron energy level statistics in graphene quantum dots

Motivated by recent experimental observations of size quantization of electron energy levels in graphene quantum dots [7] we investigate the level statistics in the simplest tight-binding model for different dot shapes by computer simulation. The results are in a reasonable agreement with the experiment which confirms qualitatively interpretation of observed level statistics in terms of “Dirac billiards” without taking into account many-body effects. It is shown that edge effects are in general sufficient to produce the observed level distribution and that even strong bulk disorder does not change the results drastically.

     

Charge noise acting on graphene double quantum dots in circuit quantum electrodynamics architecture

We investigate the dephasing mechanisms induced by the charge noise and microwave heating effect acting on a graphene double quantum dot(DQD) capacitively coupled to a microwave resonator. The charge noise is obtained from DC transport current, and its contribution to dephasing is simultaneously determined by the amplitude response of the microwave resonator. A lowfrequency 1/f-type noise is demonstrated to be the dominant factor of the dephasing of graphene DQD. Furthermore, when the applied microwave power is larger than-90 d Bm, the dephasing rate of graphene DQD increases rapidly with the increase of microwave power, and fluctuates slightly with the applied microwave power smaller than-90 d Bm. Our results can be applied to suppress the impeditive influence on the dephasing of graphene-based devices associated with microwave input in the perspective investigations.     

The carrier “antibinding” in quantum dots: a charge separation effect

We show that the carrier “antibinding” observed recently in semiconductor quantum dots, i.e., the fact that the ground state energy of two electron-hole pairs goes above twice the ground-state energy of one pair, can entirely be assigned to a charge separation effect, whatever its origin. In the absence of external electric field, this charge separation comes from different “spreading-out” of the electron and hole wavefunctions linked to the finite height of the barriers. When the dot size shrinks, the two-pair energy always stays below when the barriers are infinite. On the opposite, because barriers are less efficient for small dots, the energy of two-pairs in a dot with finite barriers, ends by behaving like the one in bulk, i.e., by going above twice the one-pair energy when the pairs get too close. For a full understanding of this “antibinding” effect, we have also reconsidered the case of one pair plus one carrier. We find that, while the carriers just have to spread out of the dot differently for the “antibinding” of two-pairs to appear, this “antibinding” for one pair plus one carrier only appears if this carrier is the one which spreads out the less. In addition a remarkable sum rule exists between the “binding energies” of two pairs and of one pair plus one carrier.     

Current switch by coherent trapping of electrons in quantum dots

We propose a new transport mechanism through tunnel-coupled quantum dots based on the coherent population trapping effect. Coupling to an excited level by the coherent radiation of two microwaves can lead to an extremely narrow current antiresonance. The effect can be used to determine interdot dephasing rates and is a mechanism for a very sensitive, optically controlled current switch.     

Review of deep ultraviolet photodetector based on gallium oxide

Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.     

Spectrum of localized states in graphene quantum dots and wires

We developed semiclassical method and show that any smooth potential in graphene describing elongated a quantum dot or wire may behave as a barrier or as a trapping well or as a double barrier potential, Fabry–Perot structure, for 1D Schrödinger equation. The energy spectrum of quantum wires has been found and compared with numerical simulations. We found that there are two types of localized states, stable and metastable, having finite life time. These life times are calculated, as is the form of the localized wave functions which are exponentially decaying away from the wire in the perpendicular direction.     

Density of states in randomly shaped graphene quantum dots

By numerical diagonalization of honeycomb-lattice tight-binding Hamiltonian we calculate the density of state (DOS) of irregularly shaped graphene quantum dots fabricated in the form of graphene nano-flakes. The finite-size electron confinement and the edge states result in the central peak of DOS that is located at the zero-energy Dirac point. The amplitude and width of the peak are provided by the form of the graphene cluster, but no regular correlation with its shape was found.