Controllable characteristics of spontaneous emission of the polarized atoms in a dielectric slab embedded in dielectric or metallic medium

The spontaneous emission (SE) behavior of the polarized atoms in a dielectric thin slab embedded in dielectric or metallic medium is analyzed. It is found that the SE rate of the polarized atoms in the vicinity of interface between the slab and surrounding medium can be considerably varied when changing the polarized direction of atoms. A switching operation of atomic SE between the inhibition and enhancement processes of the SE can be realized. In a dielectric thin slab embedded in metallic medium, the SE rate of the atoms near the dielectric–metal interface is enhanced greatly owing to the effect of surface-plasmon polaritons. Our findings imply that the tuning of the polarized orientation of atoms in the dielectric thin slab can effectively control the atomic SE processes.     

Effects of the dielectric discontinuity on the photodetachment of H− ion

Using the closed orbit theory, we studied the effects of dielectric discontinuity on the photodetachment of H^? ions. The photodetachment cross-section of H^? in a medium with dielectric discontinuity was derived and calculated. The results have shown that the relative dielectric constants of the medium have a significant influence on the photodetachment of H^?. If H^? is kept in a medium with a relative small dielectric constant, the photodetachment cross-section of H^? becomes oscillating only in a small region above the ionization threshold. However, if H^? is kept in a medium with a relative large dielectric constant, the oscillation in the photodetachment cross-section becomes much stronger. Besides, the distance between H^? and the dielectric dividing interface also influences the photodetachment of H^?. For a given dielectric medium, the oscillation in the cross-section decreased with increasing distance between H^? and the dielectric dividing interface. Therefore, we can control the photodetachment of a negative ion by changing the dielectric constant and the ion–interface distance. This study provides a new understanding of the photodetachment process of negative ions in the presence of a dielectric medium.     

Effects of saturation on optical bistability with coupled surface plasmons

We present exact numerical results for a symmetric layered medium (prism/Ag film/nonlinear dielectric/Ag film/prism) where the middle dielectric slab is assumed to have a saturation-type nonlinearity. We show bistable behaviour in the power dependence of the reflectivity ofp-polarized light under the condition when coupled surface modes are excited in the structure. Moreover, we study the effect of saturation on the bistable behaviour to show that multivalued character is inhibited by saturation effects. The field distributions corresponding to the minimum reflectivity states of the nonlinear structure are also presented.     

混合电解质溶液中考虑介电饱和度的表面电位评估原理

基于非线性泊松-玻尔兹曼方程，推导了混合电解质溶液中考虑介电饱和度的表面电位的解析表达式. 近似解析解和精确数值解计算出的表面电位在很大范围的电荷密度和离子强度条件下均具有很好的一致性. 当表面电荷密度大于0.30 C/m^{2 时，介电饱和度对表面电位的影响变得尤为重要；当表面电荷密度小于0.30 C/m2时，可忽略介电饱和度的影响，即基于经典泊松-玻尔兹曼方程可获得有效的表面电位解析模型. 因此，0.3 C/m2可作为是否考虑介电饱和度的颗粒临界表面电荷密度值. 在低表面电荷密度时，考虑介质饱和度的表面电位解析模型可自然回归到经典泊松-玻尔兹曼理论的结果，得到的表面电位可以正确地预测一价和二价反离子之间的吸附选择性.}     

Saturable and reverse saturable absorption in aqueous silver nanoparticles at off-resonant wavelength

Silver nano-colloid was prepared by chemical reduction method and its nonlinear absorption properties were investigated by using open aperture z-scan experiment with nanosecond laser pulses operating at 532?nm. Interestingly, a switch over from saturable absorption to reverse saturable absorption was observed when the input intensity is increased from 28.1 to 175.8?MW/cm². The underlying mechanism responsible for the observed switching behaviour is the interplay between ground state plasmon band bleaching and excited state absorption. Theoretical fitting was done by using a model in which nonlinear absorption coefficient as well as saturation intensity are incorporated.     

Switching mechanism due to the spontaneous emission cancellation in photonic band gap materials doped with nano-particles

We have investigated the switching mechanism due to the spontaneous emission cancellation in a photonic band gap (PBG) material doped with an ensemble of four-level nano-particles. The effect of the dipole–dipole interaction has also been studied. The linear susceptibility has been calculated in the mean field theory. Numerical simulations for the imaginary susceptibility are performed for a PBG material which is made from periodic dielectric spheres. It is predicted that the system can be switched between the absorbing state and the non-absorbing state by changing the resonance energy within the energy bands of the photonic band gap material.     

Near-field modification of femtosecond laser beam to enhance single-shot pulse filamentation in glass medium

In this paper, a study of the effect of a transparent dielectric medium (soda-lime glass placed after an objective lens) on femtosecond pulse filamentation in Corning Eagle²⁰⁰⁰ glass is presented. The dielectric medium placed after the objective lens increases the effective numerical aperture of the focusing lens and tightly focuses the beam to elevate the power density in a tiny focal volume. A single-shot narrow filamentary void of diameter 3.8 μm is observed to propagate as long as 700 μm in Corning Eagle²⁰⁰⁰ glass. Elevated optical intensity confined in the small focal volume and low ionization losses per unit length in the narrow plasma column collectively enhance the filamentary propagation of the ultra-short pulse in bulk glass. The applied technique also offers an approach to control the length and width of a filamentary void structure in a transparent dielectric medium.     

Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors

We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO₂) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (μ_sat) from 0.01 cm²/(V s) to 0.76 cm²/(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase.     

Effect of dielectric layer on ferroelectric responses of P(VDF-TrFE) thin films

The dielectric layer in the sandwich structural device plays a very important role in determining the electrical properties of the ferroelectric film. In this paper, we investigate the effect of the dielectric layers with different thicknesses on switching performance of ferroelectric P(VDF-TrFE) thin films. The hysteresis loops become slanting with increasing thickness of the dielectric layer. A negative slope of the ‘real’ hysteresis loop is apparently observed which demonstrates negative capacitance effect caused by the dielectric layer. This behavior is simulated qualitatively by the Weiss mean field model considering an interfacial dielectric layer in series with a ferroelectric layer. The agreement between experiments and simulations supports that negative capacitance results from the positive feedback among electric dipoles. Furthermore, the switching time of the ferroelectric film increases with the increase of dielectric layer thickness. This study shows that the ferroelectric sandwich structure provides great potential towards low power negative capacitance devices.     

Electrodynamic properties of nanoporous silicon in the range from terahertz to infrared frequencies

The dielectric response (conductivity and permittivity) spectra of a series of nanoporous silicon samples prepared by anodization of low-resistivity single-crystal silicon are measured, for the first time, using terahertz and IR spectroscopy in the frequency range 7–4000 cm^?1 at room temperature. The spectra obtained are analyzed in terms of the effective medium theory with a size-dependent dielectric response function of nanoinclusions and averaged dielectric characteristics of the surrounding medium. The geometric and dielectric characteristics of silicon nanoinclusions are determined. The dielectric properties of inclusions are found to be affected by nanosize effects, namely, carrier scattering at crystallite boundaries and a broadening of the band gap due to quantum confinement. The spectra of the samples prepared by adding iodine to the electrolyte exhibit a resonance at frequencies of 150–300 cm^?1. The nature of the resonance can be associated with the presence of chemisorbed iodine on the surface of porous silicon. Possible mechanisms responsible for the changes in broadband conductivity and permittivity spectra of single-crystal silicon upon transformation into a nanoporous structure are discussed.     

Field-induced phase transitions and reversible field-induced inversion of chirality in tilted smectic phases of bent-core mesogens

Three homologous achiral five-ring bent-core mesogens are presented where 4-chlororesorcinol is the central core and the aromatic rings are linked by ester groups. These compounds form smectic phases with a tilted arrangement of the molecules (tilt angle ≈ 45^°). On cooling the isotropic liquid this phase adopts a fan-like texture which shows for two homologues at relatively high electric fields ( 25-35V μm^-1) an antiferroelectric electro-optical response based on the collective rotation of the molecules around their long axes. At lower temperature the application of a sufficiently high electric field leads to a continuous transition into a non-birefringent texture which exhibits randomly distributed domains of opposite handedness. These domains can be reversibly switched into a state of opposite chirality by reversal of the field polarity. This switching is bistable and shows a current response typical for a ferroelectric ground state. The possible mechanism of the field-induced phase transition, of the ferroelectric switching and of the field-induced inversion of the chirality is discussed on the base of XRD, ¹³C- and ¹H-NMR investigations, dielectric and electro-optical measurements.     

Giant quadratic electro-optical effect during polarization switching in ultrathin ferroelectric polymer films

The low-frequency quadratic electro-optical effect with a maximum electro-optical coefficient of g = 8 × 10^?19 m²/V² (i.e., four orders of magnitude greater than the standard high-frequency value) has been studied in thin films of ferroelectric polymer PVDF(70%)-TrFE(30%). The observed effect is related to the process of spontaneous polarization switching, during which the electron oscillators of C-F and C-H dipole groups rotate to become parallel to the applied field. As a result, the ellipsoid of the refractive index exhibits narrowing in the direction perpendicular to the field. The field dependence of the electro-optical coefficient g correlates with that of the apparent dielectric permittivity, which can be introduced under the condition of ferroelectric polarization switching. The observed electro-optical effect strongly decreases when the frequency increases up to several hundred hertz. The temperature dependence of the effect exhibits clearly pronounced hysteresis in the region of the ferroelectric phase transition.     

雨介质中球形目标的GHz复合散射特性

将背景空间及其中存在的离散粒子作为一种连续的电介质,得出了背景空间中离散粒子存在时混合体的等效介电常量模型.利用该模型和国际电讯联盟给出的雨衰减测量数据,确定了GHz波段雨介质的等效介电常量并验证了其有效性.得出了雨环境中目标复合散射场的解析式,对雨环境中球形目标的复合微分散射进行了仿真与分析,进而研究了降雨率、电磁波频率及极化状态等因素对复合微分散射的影响.计算表明:降雨对微分散射的影响在10^-3分贝上,电磁波垂直极化时降雨的影响大于其水平极化时的影响.研究结果对精确制导和目标识别等有一定的参考意义.     

Highly efficient upconversion emission and luminescence switching from Yb3+/Tm3+ co-doped water-free low silica calcium aluminosilicate glass

We present highly efficient 480 and 800 nm upconversion emissions in Tm³⁺/Yb³⁺ co-doped water-free low silica calcium aluminosilicate glass under excitation at 976 nm. As a result of this efficient upconversion process, a luminescent switching with the excitation intensity has been observed. The switching is explained and discussed using rate equations analysis and saturation effects. By means of fitting of the experimental data point, it was possible to obtain the value of the energy transfer parameter related to the transition ²F_5/2, ³H₄→²F_7/2, ¹G₄. The value of this parameter is higher than that of materials like YLF. This switching mechanism could be used in the development of sensors and networks for optical processing and optical communications.     

Internal Structure and Magnetic Properties in Cobalt Ferrite Nanoparticles: Influence of the Synthesis Method

The design of novel nanostructured magnetic materials requires a good understanding of the variation in the magnetic properties due to different synthesis conditions. In this work, four different procedures for fabricating Co‐ferrite nanoparticles with similar sizes between 7 and 10 nm are compared by studying their structural and magnetic properties. Non‐aqueous methods based on the thermal decomposition of metal acetylacetonates at high temperatures, either with or without surfactants, provide highly crystalline nanoparticles with large saturation magnetization values and a coherent reversal of the magnetic moment. However, variations in the density of defects and in the shape of the nanocrystals determine the distribution of switching fields and the effective magnetic anisotropy, which reaches up to ≈1 × 10⁷ erg cm^?3 for oleic acid‐capped 9 nm nanoparticles. It is shown that the saturation magnetization values for nanoparticles produced by different methods are in the range between 49 and 95 emu g^?1 due to differences in the stoichiometry, in the cation occupancy, in the magnetic disorder and in the spin canting of the magnetic sub‐lattices, the latter evaluated by in‐field Mössbauer spectroscopy.     

室温条件下掺铒光纤中光脉冲群速可控特性的研究

利用相干布居振荡技术在介质吸收光谱上产生烧孔，孔宽大约为基态粒子数恢复时间的倒数. 由增益理论分析得到不同抽运光功率对介质吸收状态的影响. 在介质的吸收区域，振荡导致光脉冲经历饱和吸收，脉冲传输延迟；在介质的增益区域，振荡又导致光脉冲经历增益饱和，脉冲传输超前. 应用此技术在掺铒光纤中实现了光速人为可控. 在掺铒光纤晶体中观测到了最慢为2.857×10³m/s的光速减慢传输，相应感生群折射率为10.5×10⁴. 根据布居振荡效应及增益理论，由速率方程出发，得到了 关键词： 光谱烧孔 相干布居振荡 饱和吸收 慢光     

室温下表面极化效应对量子点带隙和吸收峰波长的影响

对于离散在本底介质中的纳米晶体量子点,考虑表面极化效应,通过像电荷法建立极化势能项,应用微扰法求解激子的薛定谔方程,得到了与本底介电系数直接相关的量子点带隙解析表达式.对不同本底中尺寸依赖的量子点带隙、第一吸收峰波长、第一吸收峰波长移动进行的计算表明,表面极化效应对量子点的带隙和第一吸收峰波长有明显的影响.随着本底介电系数的增大,量子点的带隙减小,第一吸收峰波长红移.量子点在不同本底中的第一吸收峰波长移动会在某个固定粒径达到最大值,最大值对应的粒径取决于量子点种类.     

Infrared spectroscopy of nano-porous silicon

The first measurements of dielectric-permittivity and conductivity spectra of several samples of nano-porous silicon prepared by anodization of low-resistance monocrystalline silicon are performed at room temperature by means of subterahertz and IR spectroscopy in the frequency range 7–4000 cm^?1. The obtained spectra are analyzed in terms of the effective-medium theory with a size-dependent dielectric-response function of nanoinclusions and average dielectric parameters of the surronding medium. It is found that the dielectric properties of the inclusions are dependent on nano-size effects such as charge-carrier scattering at the boundaries of the nanocrystallites and increase in the band-gap energy due to the quantum size effect. The geometric and dielectric characteristics of silicon nano-size inclusions are determined. We consider the mechanisms of variation in the wide-band dielectric permittivity and conductivity spectra of monocrystalline silicon during transformation of its structure from monocrystalline to nano-porous.     

Influence of ion bombardment on the photoluminescence response of embedded CdS nanoparticles

Semiconductor nanoparticles (CdS) were fabricated by an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. Nano-CdS in PVA were subjected to ion irradiation (using oxygen, chlorine and gold) in the medium energy range (80–100 MeV) and under fluence variation of 10¹¹–10¹³ ions/cm². The nature of light emission was found to be drastically different in each of the three cases. Photoluminescence spectra of oxygen irradiated samples exhibit band edge emission (2.8 eV) as well as trap related emission (1.76 eV) whereas band edge emission is found to be bleached out for chlorine ion irradiated nano-CdS. The intense broad PL peaks, noticeable in the case of gold ion irradiated samples suggest superposition of the two peaks — namely, band edge emission and trap related emission. Furthermore, in the case of gold ion irradiated nano-CdS, energy shift in the PL spectra reveals variation in size distribution caused by the extra pressure effect of heavy gold ion beams. The mechanism of such a difference as a result of ion irradiation-type and ion-fluence is discussed in detail.     

Switching processes and the electronic subsystem in ferroelectric ceramic of the barium-lead niobate type

This paper is devoted to the study of the relation between switching processes and the states of the electronic subsystem in a ferroelectric ceramic. Experimental observations of the dielectric hysteresis loops at 5·10^–3 Hz, thermally stimulated currents, the relaxation of the conductivity, and the temperature dependence of the stationary conductivity in the temperature range 280–423 K were performed. Formulas are proposed for calculating the hysteresis loop and the coefficient of dielectric viscosity from the parameters of the hysteresis loop. It is established that for a ferroelectric ceramic of the BLN type charge carriers localized at the levels 0.18, 0.25, 0.27, and 0.37 eV play the determining role in the formation of the equilibrium ferroelectric state far from the phase-transition point. It is shown that the coefficient of dielectric viscosity for polycrystalline samples is determined by the relaxation time of the electronic subsystem and the orientation of the internal field in the sample.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 9–14, February, 1989.In conclusion we thank V. P. Kamentsev and A. V. Nekrasov for a useful discussion of this work.