Effect of Eu2+ concentration on afterglow suppression in CsI:Tl,Eu

Combined radioluminescence and thermoluminescence experiments on the co-doped scintillator material CsI:Tl, Eu were extended in the present investigation to a sample with diminished europium concentration. Simulations based on postulated rate equations with empirically adjusted parameters are consistent with observed insensitivity of afterglow suppression to europium concentration for sufficiently short radiation times.     

Comparison of functional parameters of CsI:Tl crystals and thick films

500 mkm thick CsI:Tl columnar films can be produced using thermal evaporation in vacuum by sublimation of the same bulk crystal. Comparison of afterglow and radiation stability of deposited CsI:Tl films with source crystal was the aim of current work. It is shown that the afterglow in the films is always below its level in initial single crystal. It was ascertained that the annealing atmospheres influence the processes leading to the activator depletion of the films during the thermal processing.     

A Tunneling Model for Afterglow Suppression in CsI:Tl,Sm Scintillation Materials

Combined radioluminescence, afterglow and thermoluminescence experiments on single-crystal samples of co-doped CsI:Tl,Sm suggest that samarium electron traps scavenge electrons from thallium traps and that electrons subsequently released by samarium recombine non-radiatively with trapped holes, thus suppressing afterglow. Experiments on single crystals support the inference that electrons tunnel freely between samarium ions and are trapped preferentially as substitutional Sm⁺ near V_KA(Tl⁺) centers where non-radiative recombination is the rate-limiting step. Afterglow in microcolumnar films of CsI:Tl,Sm is enhanced by inhomogeneities which impede tunneling between samarium ions, but is partly suppressed by annealing.     

Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Monitoring the energy variation of an electron linac using a Cerenkov detector

A new method to monitor the energy variation of a multi-energy electron linac by combining a Cerenkov detector and a CsI(Tl) detector is reported. The signals in the Cerenkov detector show an appreciable but different dependence on the energy of the electron linac from the traditional CsI(T1) detector due to the particular response of the former to charged electrons with high velocity above threshold. The method is more convenient than the HVL (half-value layer) method which is commonly employed to calibrate the energy of an electron linac for real time monitoring. The preliminary validity of the method is verified in a dual-energy electron linac with 6 MeV and 3 MeV gears. Moreover, the method combining the Cerenkov detector and the CsI(Tl) detector is applicable to probe the X-ray spectrum hardened by the inspected material and may serve as a novel tool for material discrimination with effective atomic number in radiation imaging.     

Li+共掺杂GdTaO4:Eu3+发光增强效应的研究

测量了不同浓度Li+共掺杂下GdTaO4:Eu3+荧光粉材料的X射线衍射谱(XRD)、发射光谱以及红外透射谱,并应用Judd-Ofelt理论,由发射光谱得到Eu3+的光谱跃迁强度参数Ω2.发现Li+共掺杂有助于提高GdTaO4:Eu3+的发光强度,当x=0.06和0.10时,612 nm处的发光强度分别被提升了1.7倍和1.5倍.发光增加的原因是因为Li+的助熔剂效应有效提高了GdTaO4材料的结品性能,并抑制了Cd2O3和Ta2O5杂相的产生,而非所推测的掺Li+引起了配位场对称性降低,从而导致宇称禁戒的放宽.此时Gd0.92-xLixTaO4:Eu3+0.08材料不仪结晶性能较好,而且Gd2O3和Ta2O5杂相也相对较少,故而发光增强最为明显.     

红色长余辉材料Y2O2S : Eu,Si,M 的制备及发光性能

采用高温固相法合成了红色长余辉材料Y₂O₂S : Eu, Si, M(M=Mg,Ca,Sr,Ba),利用X晶体衍射、发光光谱、热释光测量等对材料的性能进行了表征。结果分析表明:Y₂O₂S : Eu,Si,M(M=Mg,Ca,Sr,Ba)长余辉材料的最大荧光发射和余辉发射峰完全一致都位于627 nm, 产生红光发射,是典型的Eu³⁺离子的⁵D₀-⁷F₂跃迁。激发停止后,能够产生较好的余辉性能。碱土金属离子能够增强其荧光发射峰强度并对余辉性能有一定促进作用,其中以Mg²⁺最好,其次是Ba²⁺。     

X光作用下CsI:Tl晶体的转换效率研究

X光转换材料在数字辐射成像系统中具有很重要的作用,它的效率对整个系统的量子探测效率起到决定性的作用。对CsI∶Tl晶体在X光激发下的发光效率进行详细分析,根据X光在物质中的衰减和吸收规律,从理论上推导了其对X光转换效率的关系,并建立了利用CCD相机作接收系统时的图像数据的表达形式,表明该系统输出与入射X光照射量成线性关系;并在30 MeV射频加速器上进行了实验验证。     

X光作用下CsI:Tl晶体的转换效率研究

X光转换材料在数字辐射成像系统中具有很重要的作用,它的效率对整个系统的量子探测效率起到决定性的作用。对CsI∶Tl晶体在X光激发下的发光效率进行详细分析,根据X光在物质中的衰减和吸收规律,从理论上推导了其对X光转换效率的关系,并建立了利用CCD相机作接收系统时的图像数据的表达形式,表明该系统输出与入射X光照射量成线性关系;并在30 MeV射频加速器上进行了实验验证。     

CsI:Na(CsI:Tl)荧光透过率和对X射线的转换因子

在建立模型的基础上,较为全面地分析了CsI:Na(CsI:Tl)X射线转换屏的荧光透过率及对X射线的转换因子,明确了转换因子与X光子能量、转换屏厚度、衬底反射率、荧光吸收系数之间的函数关系.计算表明,荧光透过率(及转换因子)与衬底反射率和1/(σL)值有较强的关系,为有较高的荧光透过率,实际制作的CsI:Na转换屏的1/(σL)值应在10以上,最好能达到30~40.在相同情况下,反射方式的转换因子高于透射方式.用增加厚度来提高转换因子时应考虑荧光透过率降低的负面影响.可选择适当的CsI:Na(CsI:Tl)厚度使转换因子最佳.     

闪烁晶体碘化铯在紫外光和X射线激发下的发光特性

室温下掺铊碘化铯(CsI∶Tl)晶体的吸收谱在230~320 nm范围内有3个特征峰:310 nm(4 eV)、270nm(4.6 eV)和245 nm(5.1 eV)。采用这3种不同激发能量(对应不同激发机制)的近紫外(UV)光激发得到的荧光(PL)光谱相同。这些PL谱与钨(W)靶X射线激发的辐照致荧光(RL)谱也类似。经分峰计算,PL和RL均含有4种熟知的3.1 eV(400 nm)、2.55 eV(486 nm)、2.25 eV(550 nm)和2.1 eV(590 nm)发光组分,但RL中2.1 eV组分高于PL,同时2.55 eV组分又低于PL。分析认为,这一差异来自于X射线对晶体的辐照损伤Tl+Va+、Tl0Va+,相关的2.1 eV吸收峰与2.55 eV发光带重叠。结果表明:X射线比紫外光更易产生损伤从而影响晶体CsI∶Tl的发光特性。     

CsI∶Tl晶体对高能X光照射量的响应关系研究

在X光探伤系统中使用效率较高的CsI∶Tl晶体作为X光转换体。CsI∶Tl晶体对X光的响应关系是精密图像处理、定量测量所需的一项重要参量,理论上已经推导了CsI∶Tl晶体对X光的响应呈现线性关系,并针对性地设计了在60Co放射源上的定量测量实验,所获数据不仅充分证明了理论推导的正确性,还证明了相应系统的这种线性关系的线性度非常好。     

长余辉材料SrAl2O4 ∶ Eu,Dy中Eu的 价态变化及对发光性能的影响

采用高温固相法,先在空气气氛下制备了SrAl₂O₄ ∶ Eu,Dy,后对其进行还原→氧化→还原处理。X射线衍射结果表明,经过还原→氧化→还原处理后样品的晶体结构没有改变。样品的发射光谱测试表明,在高温空气气氛下有少量的Eu³⁺还原成Eu²⁺。Eu³⁺和Eu²⁺有不同的发光特性,Eu³⁺产生的是线状特征光谱,发射峰值在592,616 nm。Eu²⁺产生的是带状光谱,带的中心位置在513 nm。经过还原处理的样品和经过氧化处理的样品相比,Eu²⁺的浓度得到显著提高,而Eu³⁺的浓度则急剧下降。对Eu²⁺的氧化、Eu³⁺的还原的机理进行了细致地讨论。另外,样品的热释光谱测试表明,经过氧化气氛处理和经过还原气氛处理过的样品的热释光峰值有很大的变化,但陷阱能级深度基本不变,在0.65 eV左右。这表明,对长余辉材料SrAl₂O₄ ∶ Eu,Dy进行还原→氧化→还原处理,Eu离子价态和发光强度会产生变化,并不影响其中Dy离子的陷阱能级。     

Eu和Dy掺杂BaAl12O19长余辉发光性能研究

采用高温固相法在不同的气氛条件下合成了BaAl12O19:Eu2+/Eu3+,Dy3+发光材料。X射线衍射(XRD)表明:实验得到了纯净的BaAl12O19相结构,Eu和Dy的掺入并未改变相结构。通过比较发现,Eu和Dy掺杂后导致XRD衍射峰向高角度有微小移动,显示Eu和Dy取代晶格中Ba后使面间距发生变化。发射光谱表明:在不同条件下合成的样品都存在Eu2+的4f65d1→4f7之间的宽带跃迁;空气气氛下合成的样品中Eu2+的宽带跃迁的存在表明样品中发生了自还原现象。Dy3+的加入使样品发光增强,同时样品具备了长余辉特性。还原气氛下合成的Eu和Dy共掺样品的余辉衰减和热释光研究表明所得样品具有良好的室温和高温长余辉性能。     

Eu red long afterglow in Y2O2S:Ti, Eu phosphor through afterglow energy transfer

Eu,Ti co-doped Y₂O₂S:0.03Ti,0.03Eu phosphors and single Eu or Ti doped Y₂O₂S phosphors were prepared and their luminescent properties were investigated in detail by photoluminescence (PL) spectra, long afterglow spectra and thermoluminescence spectra measurements. The results showed that Y₂O₂S:Ti,Eu phosphors possess orange-red afterglow color with afterglow time above 5 h. The reddish afterglow color, which corresponds to a set of linear Eu³⁺ emissions at low-energy range (540-630 nm), was demonstrated to come from the energy transfer process from yellow Ti afterglow emissions, the proposed energy transfer mechanism may well explain the Eu³⁺ afterglow emission.     

CsI(Tl)闪烁体软X光能量响应的模拟研究

CsI(Tl)闪烁体是X光转换为可见光比较重要的一个部件,在惯性约束聚变中的X 光诊断等方面有着十分重要的应用。通过Geant4软件较为全面地分析了CsI(Tl)闪烁体软X光能量响应,模拟了1~5 keV的软X光入射不同厚度（20,30,50 m）CsI(Tl)的能量沉积谱,探究了粒子之间相互作用的物理过程,并比较了不同能量软X光在不同厚度CsI(Tl)闪烁体中的沉积效率。仿真结果表明,随着CsI (Tl)闪烁体厚度的增加,软X光在CsI (Tl)闪烁体中沉积的能量也逐渐增加,沉积效率与CsI (Tl)闪烁体厚度成正比。模拟研究为选择合适厚度的闪烁体做低能段软X光探测实验做铺垫。     

M′型LuTaO_4∶Eu~(3+)透明闪烁厚膜的制备及性能研究

X射线成像在生命科学和物质微结构分析等许多方面有着非常重要的应用,X射线成像仪器核心部件之一为X射线-可见光转换屏。透明闪烁薄膜是实现高空间分辨率X射线成像的一条有效途径。铕掺杂M′型LuTaO_4是一种性能优越的闪烁材料,其密度高达9.75g·cm~(-3),化学性质稳定,辐照硬度大,有望制备成透明薄膜型高空间分辨率X射线转换屏。以2-甲氧基乙醇为溶剂、PVP为胶粘剂,采用溶胶-凝胶法成功制备出M′型LuTaO_4∶Eu~(3+)透明闪烁厚膜,并对透射率、光致发光、X射线激发发射光谱和空间分辨率等一系列的薄膜性能进行表征。经过8次旋涂之后,膜层均匀、无裂纹,厚度为2.1μm,发光波段的透射率为70%以上,成像空间分辨率达到1.5μm。将厚膜作为X射线-可见光转换屏,成功对果蝇进行了X射线成像,其复眼结构清晰可见。此外,紫外和X射线激发下闪烁膜的发光特性研究表明,该厚膜具有优良的发光性能,已基本满足高分辨率X射线成像的要求,有望在显微X射线成像方面获得很好应用。     

Development of x-ray scintillator functioning also as an analyser grating used in grating-based x-ray differential phase contrast imaging

In order to push the grating-based phase contrast imaging system to be used in hospital and laboratories,this paper designs and develops a novel structure of x-ray scintillator functioning also as an analyser grating,which has been proposed for grating-based x-ray differential phase contrast imaging. According to this design,the scintillator should have a periodical structure in one dimension with the pitch equaling the period of self-image of the phase grating at the Talbot distance,where one half of the pitch is pixellated and is made of x-ray sensitive fluorescent material,such as CsI(Tl),and the remaining part of the pitch is made of x-ray insensitive material,such as silicon. To realize the design,a deep pore array with a high aspect ratio and specially designed grating pattern are successfully manufactured on 5 inch silicon wafer by the photo-assisted electrochemical etching method. The related other problems,such as oxidation-caused geometrical distortion,the filling of CsI(Tl) into deep pores and the removal of inside bubbles,have been overcome. Its pixel size,depth and grating pitch are 3 μm×7.5 μm,150 μm and 3 μm,respectively. The microstructure of the scintillator has been examined microscopically and macroscopically by scanning electron microscope and x-ray resolution chart testing,respectively. The preliminary measurements have shown that the proposed scintillator,also functioning as an analyser grating,has been successfully designed and developed.     

Energy resolution and non-proportionality of scintillation detectors – new observations

According to the present knowledge, the non-proportionality of the light yield of scintillators appears to be the fundamental limitation of energy resolution and it is related to the intrinsic properties of the crystals. However, several observations collected in the last 10 years suggest more complex processes in the scintillators. First, the study of undoped NaI and CsI crystals showed that the non-proportionality and energy resolution are very sensitive to the accidental traces of impurities. For some crystals, like CsI(Tl), ZnSe(Te), undoped NaI at liquid nitrogen temperature and finally for NaI(Tl) at temperatures reduced below 0 °C, an influence of slow components of the light pulses on energy resolution and non-proportionality is observed. A common conclusion of these observations is the fact that the highest energy resolution, and particularly the intrinsic resolution measured with scintillators, characterized by two components of the light pulse decay, is obtainable when the spectrometry equipment integrates the whole light of both components. In the limiting case, the afterglow could be considered also as a very slow component destroying the energy resolution. The aim of this work is to summarize all above observations looking for their origin.     

二价铕激活的ZnS磷光体的发光

本文详细描述了ZnS:Eu2+磷光体的合成及光致发光性能。首次报导了这种发光材料的特殊长余辉特性。作者测量了热释发光光谱、不同温度下的发射特性的变化及荧光的激发、发射衰减时间,提出两类缔合Eu中心的模型。用不同的缔合Eu中心较好地解释了它的光谱特性及长余辉现象,认为光谱的两个发射带来自不同的缔合Eu中心,即550nm发射带对与ZnS导带电子陷阱相缔合的Eu中心有关,650nm带来自与电子陷阱和空穴陷阱缔合的Eu中心。发射的余辉主要与导带中某种电源电子陷阱存在有关。此外,本文还对与应用有关的阴极射线发光性能进行了报导。