无序Cu_(33)Y_(67)低温电阻和磁阻中的相互作用和弱定域化

文中报道非晶Cu_(33)Y_(67)低温电阻和磁阻的测量结果。这种合金是在He气氛中以熔化-自旋技术制备的。相互作用效果可以为4.5K以下的低温电阻提供一个-T~(1/2)形式的贡献。在稍高的温度,其变化规律也可以通过相互作用和弱定域化的联合来解释。上至1.8T的磁阻测量揭示出一个具有自旋-轨道散射较强影响的弱定域化效果。Cu_(33)Y_(67)的磁阻测量值比弱定域化预言的大。如果把弱定域化的理论预言强度增大3倍,则可以在整个测量磁场范围内与实验值拟合。自旋-轨道散射时间τ_(50)和非弹性散射时间τ_i作为两个拟合参量。τ_(50)不随温度变化,而从对电阻和磁阻分别拟合所确定的τ_i与温度关系是互相符合的。     

La2-xSrxCuO4单晶的平面内磁阻研究

测量了三种不同组分La2-xSrxCuO4(x＝0.09,0.18,0.24)单晶的平面内横向(H∥c,J∥ab)和纵向(H∥J∥ab)磁阻,发现平面横向与纵向磁阻都是正的,并且纵向磁阻与横向磁阻相比较很小,表明横向磁阻的主要贡献是电子轨道部分,也反映了ab面内和c方向电子有效质量的各向异性.三种成分单晶样品的平面内横向磁阻在不同温度随Sr含量x的变化显示在最佳掺杂浓度附近平面横向磁阻最大.     

Pb_(0.50)Sr_(0.75)Y_(0.70)Ca_(0.25)Cu_(1.70)O_y单晶的磁阻研究

对低掺杂区非超导的Pb_(6.56)Sr_(?)Y_(?)Ca_(?)Cu_(?)O_y单晶样品进行了电阻和磁阻的测量,发现在低温下电阻温度关系遵从变程跳跃传导的R=R_(?)exp[(T_(?)/T)~(?)]的变化规律,这说明该样品处于强局域化区域.在低温下的磁阻为负并有明显的各向异性,这表明这类体系的磁阻主要来自于轨道效应的贡献,并且可能受到自旋-轨道散射的影响.     

Pb0.50Sr0.75Y0.70Ca0.25Cu1.70Oy单晶的磁阻研究

对低掺杂区非超导的Pb_(6.56)Sr_(?)Y_(?)Ca_(?)Cu_(?)O_y单晶样品进行了电阻和磁阻的测量,发现在低温下电阻温度关系遵从变程跳跃传导的R=R_(?)exp[(T_(?)/T)~(?)]的变化规律,这说明该样品处于强局域化区域.在低温下的磁阻为负并有明显的各向异性,这表明这类体系的磁阻主要来自于轨道效应的贡献,并且可能受到自旋-轨道散射的影响. 关键词：     

无序Cu72Y28低温电阻和磁阻中的弱定域化和相互作用

文中介绍了非晶Cu_(72)Y_(78)在温区1.5—30K的电阻和磁阻测量结果,应用磁场高达17kOe。由测量结果可确定弱定域化对电阻温度关系的贡献。如果计及由于相互作用引起的-2~(1/T)项,则高达20K的电阻-温度关系可以很好地被描述。电阻最小值正是由弱定域化和相互作用共同作用的结果。     

非晶态磁性合金的磁阻和磁击穿现象

在室温下磁场在0—15kOe范围内测量了非晶态磁性合金(Fe_1-xCo_x)₈₂Cu_0.4Si_4.4B_13.2的横向磁阻△ρ/ρ。发现在高磁场下,磁阻与磁场强度有三种函数关系:(1)磁阻趋于饱和;(2)磁阻随磁场平方正比地增加;(3)对x=0.15的合金,在特殊的电流、磁场方向和确定的磁场强度下,有磁阻尖峰出现。情况(3)是一种磁击穿现象。磁击穿发生在自旋向上和向下的两片Fer 关键词：     

Pd_(73) Si_(20)Cr_7合金的磁阻效应

本文报告了Pd_(73) Si_(20) Cr_7合金的磁阻测量结果.发现在4.2K之下,非晶态样品在低场区为正的磁阻效应,在高场区为负的磁阻效应.其峰值出现在几千到一万高斯的范围内.     

无序Cu33Y67低温电阻和磁阻中的相互作用和弱定域化

文中报道非晶Cu₃₃Y₆₇低温电阻和磁阻的测量结果。这种合金是在He气氛中以熔化-自旋技术制备的。相互作用效果可以为4.5K以下的低温电阻提供一个-T^1/2形式的贡献。在稍高的温度,其变化规律也可以通过相互作用和弱定域化的联合来解释。上至1.8T的磁阻测量揭示出一个具有自旋-轨道散射较强影响的弱定域化效果。Cu₃₃Y₆₇的磁阻测量值比弱定域化预言的大。如果把弱定域化的理论预言强度增大3倍,则可以在 关键词：     

Sr2RuO4超导转变温度附近c方向磁阻行为研究

测量了Sr2RuO4正常态和超导转变温度附近(T=1.5K,4.0K,6K)c方向的磁阻,通过对正常态磁阻分析获得了Sr2RuO4在温度4K和6K下的平均自由程.通过超导涨落分析获得了Sr2RuO4的超导特性参数ξab(0)和ξc(0).     

首届全国大学生物理实验竞赛试题解答与考试评析

首届全国大学生物理实验竞赛中的基础性试题为“测量霍尔片的电学性质和锑化铟片的磁阻特性”和“用双光栅Lau效应测量平板玻璃的折射率”两道题,综合性、研究性试题为“用两种方法研究光在不同浓度罗丹明6G溶液中的传播速度”和“研究氧化铟锡(Indium-Tin Oxide)ITO薄膜的电阻特性”两道题.本文介绍竞赛试题的实验内...     

Domain-wall resistance in ferromagnetic (Ga,Mn)As

A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.     

钙钛矿结构La0.9Sb0.1MnO3的庞磁电阻性质

一种新的钙钛矿结构的庞磁电阻氧化物La_0.9Sb_0.1MnO₃已用固态反应方法制 成，通过超导量子干涉器件(SQUID)装置测量研究了它的电输运性质和磁性质.x射线光电子 能谱分析证明，该氧化物中Sb的价态是+5价，因此该氧化物是一种新的电子掺杂型庞磁电阻 材料. 关键词： 钙钛矿结构 0.9Sb_0.1MnO₃')" href="#">La_0.9Sb_0.1MnO₃ 电子掺杂 庞磁电阻     

Electric-tunable magnetoresistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure

The electric-tunable spin-independent magnetoresistance effect has been theoretically investigated in ballistic regime within a two-dimensional electron gas modulated by magnetic-electric barrier nanostructure. By including the omitted stray field in previous investigations on analogous structures, it is demonstrated based on this improved approximation that the magnetoresistance ratio for the considered structure can be efficiently enhanced by a proper electric barrier up to the maximum value depending on the specific magnetic suppression. Besides, it is also shown the introduction of positive electrostatic modulation can effectively overcome the degradation of magnetoresistance ratio for asymmetric configuration and enhance the visibility of periodic pattern induced by the size effect, while for an opposite modulation the system magnetoresistance ratio concerned may change its sign.     

The low field longitudinal magnetoresistance of PdMn,PdFe and AuFe near the percolation limit

The low field longitudinal magnetoresistance, Δp/p_o, of Au + 14.5%at.Fe is measured as a function of field (- 1kG < H < 1kG), temperature (1.2K, 140K) and annealing conditions. When the sample is annealed and quenched from 950 C, the low field (～ 100 G) Δp/p_o versus H curve exhibits two sharp peaks at about 35 and 75 K respectively. The low temperature peak is associated with a spin glass transition (T_g) whereas the high temperature one would correspond to a ferromagnetic transition (T_c). The spin-glass state such as T ? T_g is characterised by a clear quadratic behavior of Δp/p_o as a function of H whereas in the ferromagnetic state (T_g < T < T_c), the magnetoresistance is completely dominated by a linear term. Quenching the sample from 550C considerably reduces the overall magnetoresistance, suppresses the linear term and transforms the double peak structure into a a single rather broad cusp of a spin-glass type. To help interpreting the above results, we also carried out low field magnetoresistance measurements on Pd + 0.2 at.%Fe, Pd + 2 at.%Mn and Pd + 10 at.%Mn at low temperatures.     

Giant magnetoresistance of granular microwires: Spin-dependent scattering in integranular spacers

The anomalous behavior of magnetoresistance has been revealed in a number of granular microwires. In contrast to the giant magnetoresistance of granular alloys, which is associated with the spin-dependent scattering in the bulk of grains and at their surface, is linear in the square of the magnetization, and decreases with an increase in temperature, the magnetoresistance, for example, in Co₁₀Cu₉₀ microwires is negative, increases with an increase in temperature below the Curie temperature, and does not reach saturation in the field dependence in the high-field range. A simple mechanism of negative giant magnetoresistance due to scattering of spin-polarized charge carriers by impurity magnetic moments localized in the nonmagnetic intergranular spacers has been proposed taking into account that a considerable part of magnetic ions in microwires exhibiting this behavior is dissolved in the intergranular spacers. It has been shown that the corresponding contribution to magnetoresistance can reach 10–20%.     

Saturating and linear magnetoresistive effects in sodium and potassium

The theoretically predicted and long-sought intrinsic saturation of the transverse magnetoresistance of the alkali metals has finally been observed after sufficiently reducing the masking effect of the large superimposed linear magnetoresistance which is attributed to such classical considerations as geometry, Hall angle and non-uniform current distribution. The observed saturation values were about 100 times smaller than those observed previously in complicated metals but were still much too large to be explained only by Fermi surface anisotropy. The saturation phenomena contradict Kohler's rule but can be plausibly explained by mean free path anisotropy due predominantly to electron-phonon scattering mechanisms.     

Positive magnetoresistance due to impurity interactions in dilute AuCr alloys

The magnetoresistance of dilute AuCr alloys (2.3–322 at.ppm) has been measured in a wide region of temperature (5-3K) and of magnetic field (up to 60 kG).The “modified Kohler's rule” was used to extract the spin dependent magnetoresistance (?_M) from measured total magnetoresistance.The results has shown that, except for the most dilute specimen, ?_M includes explicitly a positive component in addition to the ordinary negative magnetoresistance proportional to log (H/T). We have attributed this positive ?_M to the effect of the interactions between the Cr impurities by taking consideration of the generalized phase shift expression of magnetoresistance proposed by Soultie.     

Negative magnetoresistance in the regime of hopping conduction through <Emphasis Type="Italic">p</Emphasis> states at quantum dots

The magnetoresistance in the system of quantum dots with hopping conduction and filling factor 2 < ν < 3 in the limit of small quantum dots has been considered. In this case, hopping conduction is determined by p states. It has been shown that the system exhibits negative magnetoresistance associated with a change in the wavefunctions of p states in a magnetic field. This mechanism of magnetoresistance is linear in magnetic field in a certain range of fields and can compete with the known interference mechanism of magnetoresistance. The magnitude of this magnetoresistance is independent of the temperature at fairly low temperatures and increases with a decrease in the size of a quantum dot.