卷曲效应对单壁碳纳米管电子结构的影响

利用计入卷曲效应的单壁碳纳米管(SWCNT)的能量色散关系,计算最低导带的电子速度及有效质量,并与不计入卷曲效应的结果进行了比较.计算结果表明:卷曲效应对电子速度及有效质量的影响与SWCNT的类型密切相关,金属锯齿型SWCNT对卷曲效应最为敏感,其次是扶手椅型SWCNT,最不敏感的是半导体锯齿型SWCNT.由此可以推断,卷曲效应对金属锯齿型SWCNT电子结构及低偏压输运特性影响最大,其次是扶手椅型SWCNT,影响最不明显的是半导体锯齿型SWCNT.这些结果与实验测量及密度泛函理论计算结果完全一致. 关键词： 单壁碳纳米管 卷曲效应 电子速度 电子有效质量     

单壁BC3纳米管晶格动力学研究

基于力常数模型计算了一系列扶手椅型、锯齿型和手性单壁BC3纳米管的声子色散关系.描述了单壁BC3纳米管结构的表征方式,比较详细地给出了其结构、对称性和晶格动力学分析.基于数值计算结果,讨论了拉曼活性模和红外活性振动模的频率与管径的关系.由分析结果做出推断,BC3纳米管的拉曼光谱和红外光谱比单壁碳纳米管更为复杂.     

石墨带的晶格动力学研究

基于晶格动力学理论,采用力常数模型,计算了石墨带的声子色散关系、振动模式密度和比热.计算结果表明,石墨带的声子谱特征介于一维碳纳米管和二维石墨片之间.扶手椅型和锯齿型石墨带的中、高频声子支分别与锯齿型和扶手椅型碳纳米管的类似.由于声子限域效应,低频声子支随着石墨带带宽的改变出现明显的频移现象.振动模式密度在高频区几乎不敏感于带宽,而低频区的峰位随着带宽的增加而逐渐向低频移动.此外,无论是在低温还是高温,比热都随着带宽的增加而逐渐降低,呈现量子尺寸效应.在300K时,比热可以拟合成C_V=C_Vg+A/n,其中C_Vg为石墨片的热容,而A/n项反映了石墨带中边缘效应对比热的影响. 关键词： 石墨带 声子色散关系 比热     

单壁BC3纳米管晶格动力学研究

基于力常数模型计算了一系列扶手椅型、锯齿型和手性单壁BC₃纳米管的声子色散关系.描述了单壁BC₃纳米管结构的表征方式,比较详细地给出了其结构、对称性和晶格动力学分析.基于数值计算结果,讨论了拉曼活性模和红外活性振动模的频率与管径的关系.由分析结果做出推断,BC₃纳米管的拉曼光谱和红外光谱比单壁碳纳米管更为复杂. 关键词： 3纳米管')" href="#">BC₃纳米管 声子色散关系 晶格动力学     

单壁碳纳米管声子谱及比热计算

利用卷曲法计算了有限长单壁碳纳米管的声子色散关系．讨论了单壁碳纳米管的比热随管径、温度的变化趋势．结果表明碳管的比热随温度、管径的增大而增大,并逐渐趋于一恒定数值．根据色散关系的计算结果,给出了有限长（5,5）型单壁碳纳米管的振动模式以及部分振动模式的频率随长度的变化关系． 关键词： 碳纳米管 声子 比热     

单壁氮化硼纳米管的结构、对称性和晶格动力学

本文分析了氮化硼纳米管的结构对称性,并对其晶格振动模的对称性进行了分类。计算了单壁氮化硼纳米管的声子色散关系,给出了扶手椅管和锯齿管拉曼和红外活性模的频率随管径的变化规律。     

卷曲方式对Rh原子在单壁碳纳米管内外吸附的影响

碳纳米管曲率与卷曲方式是同时存在并影响金属原子在碳纳米管内外吸附行为的重要因素, 单独研究卷曲方式对金属吸附行为的影响较困难. 选取曲率相近、卷曲方式不同的扶手椅型(6, 6)、锯齿型(10, 0)与手性(8, 4)单壁碳纳米管(SWCNT), 利用密度泛函理论研究了Rh原子在SWCNT内外的吸附行为. 构型优化表明:由于SWCNT卷曲方式不同, 导致Rh原子在(6, 6),(10, 0)与(8, 4)SWCNT内外吸附的稳定构型不同; 不同卷曲方式亦使SWCNT与Rh原子相互作用的C原子不同, 导致Rh 关键词： 密度泛函理论 单壁碳纳米管 Rh原子 卷曲方式     

单壁碳纳米管手性角对声子振动频率的影响

报道了用卷曲法对一系列手性单壁碳纳米管计及卷曲效应声子振动谱的计算结果.基于实际的数值计算，讨论了Brillouin区中心Γ点手性管晶格振动模的分类；得出了其12个非简并的本征频率与手性和管径的关系. 关键词： 单壁碳纳米管 手性管 振动模式     

曲率效应对超小碳纳米管电子性质的影响

在考虑曲率效应的情况下,在螺旋坐标系下解析地推导了非手性的碳纳米管(SWNTs)(包括扶手椅型和锯齿型)的能量色散关系,并分析了曲率效应对超小扶手椅型SWNTs的能带、能隙和导电能力及其对超小锯齿型SWNTs(包括扶手椅型和锯齿型)的能隙的影响.     

碳纳米管量子点的电子输运

在紧束缚近似下,利用常量相互作用模型和Landauer-Bütticker公式,计算了扶手椅型和金属锯齿型碳纳米管量子点的电导。发现,根据碳纳米管量子点的长度的不同,扶手椅型碳纳米管量子点的电导可以具有两电子或四电子的壳层结构。而锯齿型碳纳米管量子点的电导却仅有四电子的壳层结构,与长度无关;这些理论结果与之前的实验结果符合的很好。     

Phonon structure and dynamics of boron nitride single wall nanotube

We report a detailed study of the phonon properties of hexagonal boron nitride (BN) monolayers as well as nanotubes by using De Launay type of angular force model. The force constants used for calculation of phonon dispersion relations of the nanotube are derived from those for the monolayers of hexagonal by employing force constant method. These force constants have been modified to include the effect of curvature of the tubule. The results are then used to derive the phonon dispersion relations for (10,10) BN nanotubes using ‘zone-folding’ method. Calculated phonon modes are in good agreement with the experimental values obtained so far, for (10,10) armchair BN nanotubes.     

单壁碳纳米管弹性性质的羟基接枝效应

用分子动力学方法研究了端口接枝不同数量羟基对扶手椅型和锯齿型单壁碳纳米管弹性模量的影响.结果表明,未接枝的扶手椅型(5, 5),(10,10)管和锯齿型(9, 0),(18, 0)管杨氏模量分别为948,901和804,860GPa.在接枝2—8个羟基情况下,锯齿型单壁碳纳米管拉伸杨氏模量基本不随接枝数量增加发生变化,而扶手椅单壁碳纳米管则不同,接枝状态下的弹性模量比未接枝状态小很多,但接枝一定数量后,其杨氏模量又略增到某一稳定值.分别从接枝后碳纳米管变形电子密度等值线结构、C—C键长和系统结合能变化规律等方面,对单壁碳纳米管弹性模量的接枝效应进行了分析. 关键词： 碳纳米管 羟基 接枝效应 杨氏模量     

碳纳米管中的群论及一系列新点群

在讨论了碳纳米管的几何结构的基础上，对齿型和椅型碳纳米管的对称性进行了分析并将这些对称元进行了抽象和总结.对齿型和椅型碳纳米管的对称元所属的群Dnh点群进行了讨论. 关键词： 点群 碳纳米管 几何结构 对称性     

Phonon trigonal warping effect in graphite and carbon nanotubes

The one-dimensional structure of carbon nanotubes leads to quantum confinement of the wave vectors for the electronic states, thus making the double resonance Raman process selective, not only of the magnitude, but also of the direction of the phonon wave vectors. This additional selectivity allows us to reconstruct the phonon dispersion relations of 2D graphite, by probing individual single wall carbon nanotubes of different chiralities by resonance Raman spectroscopy, and using different laser excitation energies. In particular, we are able to measure the anisotropy, or the trigonal warping effect, in the phonon dispersion relations around the hexagonal corner of the Brillouin zone of graphite.     

单壁碳纳米管能带及其电子特性研究

从能带理论出发,采用电子紧束缚能量色散关系,推导锯齿,扶手椅和手性单壁碳纳米管(SWCNT)的电子能带结构表达式,指出单壁碳纳米管或为金属或为半导体的判据。结果表示:单壁碳纳米管的电子结构与其几何结构密切相关,如扶手椅型单壁碳纳米管是金属性的,而对其它类型的单壁碳纳米管是与碳纳米管的手性指数有关,只有手性指数n和m的差别等于3的倍数时,单壁碳纳米管是金属性的,否则会显出有带隙的半导体特性。这意味着单壁碳纳米管是由特殊的电子传输和光学性质,在纳米电子学领域具有巨大的潜在应用价值。     

Structure and electronic properties of MoS2 nanotubes

Structural and electronic properties as well as the stability of MoS2 nanotubes are studied using the density-functional-based tight-binding method. It is found that MoS2 zigzag ( n,0) nanotubes exhibit a narrow direct band gap and MoS2 armchair ( n,n) possess a nonzero moderate direct gap. Interestingly, the ( n,n) tubes show a small indirect gap similar to the direct gap of ( n,0) nanotubes. Simulated electron diffraction patterns confirm the existence of armchair and zigzag disulphide nanotubes. The structure of the MoS2 nanotube tips is explained by introducing topological defects which produce positive and negative curvature.     

Strain-induced structural and direct-to-indirect band gap transition in ZnO nanotubes

First-principles calculations have been employed to investigate the structural transformation and direct to indirect band gap transition of ZnO nanotubes under uniaxial strain. The results show that armchair and zigzag nanotubes can be transformed to each other via unusual fourfold-coordinated structures under the applied strain. Both the armchair and zigzag nanotubes exhibit direct band gap while the unusual fourfold-coordinated ones display indirect band gap. The origin of such a direct-to-indirect band gap transition is explained based on the analyses of atomic orbital contributions.     

Electromechanical buckling analysis of boron nitride nanotube using molecular dynamic simulation

In this paper, the effect of electric field on axial buckling of boron nitride nanotubes is investigated. For this purpose, molecular dynamics simulation and continuum mechanics are used for the first time simultaneously. In molecular dynamics simulation, the potential between boron nitride atoms is considered as Tersoff and Timoshenko beam theory is used in continuum mechanics. In this paper, buckling of zigzag and armchair boron nitride nanotubes are investigated. Here, the effects of the electric field and the length of the boron nitride nanotube on the critical load are investigated and it is shown that the effect of the electric field is different with respect to the arrangement of atoms in the boron nitride nanotubes. In fact, the electric field creates axial and torsional loads on the zigzag and armchair nanotube, respectively. Axial buckling of the zigzag nanotube is dependent on the electric field, whereas in the armchair nanotubes, the electric field changes have no effect on the axial buckling. To better understand the impact of the electric field on axial buckling, these results are compared with the continuum mechanics.