Moisture‐Resistant Mn4+‐Doped Core–Shell‐Structured Fluoride Red Phosphor Exhibiting High Luminous Efficacy for Warm White Light‐Emitting Diodes

K₂TiF₆:Mn⁴⁺ is a highly efficient narrow‐band emission red phosphor with promising applications in white light‐emitting diodes (LEDs) and wide‐gamut displays. Nevertheless, the poor moisture‐resistant properties of this material hinder commercialization. A convenient reverse cation‐exchange strategy is introduced for constructing a core–shell‐structured K₂TiF₆:Mn⁴⁺@K₂TiF₆ phosphor. The outer K₂TiF₆ shell acts as a shield for preventing moisture in the air from hydrolyzing the internal MnF₆^2? group, while effectively cutting off the path of energy migration to surface defects, thereby increasing the emission efficiency (especially for the phosphors doped with high concentrations of Mn⁴⁺). Employed as a red phosphor, the packaged white LED exhibits an extraordinarily high luminous efficacy of 162 lm W^?1, a correlated color temperature (CCT) of 3510 K, and a color rendering index of 93 (R_a). Aging tests performed on this device at 85 °C and 85 % humidity for 480 h retain up to 89 % luminous efficacy. The findings could facilitate commercial application of K₂TiF₆:Mn⁴⁺@K₂TiF₆ phosphor.     

新型WLED荧光粉Ca2MgSi2O7:Ce3+,Eu2+的能量传递和光色研究

用高温固相法制备了 Ca2 MgSi2O7:Ce3+,Eu2,并研究其发光特性.Ce3+的发射带峰值位于410 nm,对应于Ce3+的5d→4f跃迁;Eu2+的发射带峰值位于530 nm,对应于Eu2+的5d→4f跃迁.双掺样品的发射光谱表明两种离子间存在高效的电偶极-电偶极能量传递.当Ce3+和Eu2浓度分别为2％和0.125％时,样品发射光谱(λex=360 nm)色坐标为(0.221,0.312),落在白光区.以上研究说明Ca2 MgSi2O7:Ce3+,Eu2+是一种适用于近紫外芯片的新型WLED荧光粉,其光色可调谐.     

Learning from a Mineral Structure toward an Ultra‐Narrow‐Band Blue‐Emitting Silicate Phosphor RbNa3(Li3SiO4)4:Eu2+

Learning from natural mineral structures is an efficient way to develop potential host lattices for applications in phosphor converted (pc)LEDs. A narrow‐band blue‐emitting silicate phosphor, RbNa₃(Li₃SiO₄)₄:Eu²⁺ (RNLSO:Eu²⁺), was derived from the UCr₄C₄‐type mineral model. The broad excitation spectrum (320–440 nm) indicates this phosphor can be well matched with the near ultraviolet (n‐UV) LED chip. Owing to the UCr₄C₄‐type highly condensed and rigid framework, RNLSO:Eu²⁺ exhibits an extremely small Stokes shift and an unprecedented ultra‐narrow (full‐width at half‐maximum, FWHM=22.4 nm) blue emission band (λ_em=471 nm) as well as excellent thermal stability (96 %@150 °C of the initial integrated intensity at 25 °C). The color gamut of the as‐fabricated (pc)LEDs is 75 % NTSC for the application in liquid crystal displays from the prototype design of an n‐UV LED chip and the narrow‐band RNLSO:Eu²⁺ (blue), β‐SiAlON:Eu²⁺ (green), and K₂SiF₆:Mn⁴⁺ (red) components as RGB emitters.     

橙红色荧光粉BaZnP2O7∶Eu3+的制备与发光特性

采用高温固相法合成了BaZnP2O7∶Eu3+荧光粉, 并对其发光性质进行了研究.     

Site‐Selected Doping of Upconversion Luminescent Er3+ into SrTiO3 for Visible‐Light‐Driven Photocatalytic H2 or O2 Evolution

A series of upconversion luminescent erbium‐doped SrTiO₃ (ABO₃‐type) photocatalysts with different initial molar ratios of Sr/Ti have been prepared by a facile polymerized complex method. Er³⁺ ions, which were gradually transferred from the A to the B site with increasing Sr/Ti, enabled the absorption of visible light and the generation of high‐energy excited states populated by upconversion processes. The local internal fields arising from the dipole moments of the distorted BO₆ octahedra promoted energy transfer from the high‐energy excited states of Er³⁺ with B‐site occupancy to the host SrTiO₃ and thus enhanced the band‐to‐band transition of the host SrTiO₃. Consequently, the erbium‐doped SrTiO₃ species with B‐site occupancy showed higher photocatalytic activity than those with A‐site occupancy for visible‐light‐driven H₂ or O₂ evolution in the presence of the corresponding sacrificial reagents. The results generally suggest that the introduction of upconversion luminescent agents into host semiconductors is a promising approach to simultaneously harnessing low‐energy photons and maintaining redox ability for photocatalytic H₂ and O₂ evolution and that the site occupancy of doped elements in ABO₃‐type perovskite oxides greatly determines the photocatalytic activity.     

溶剂热合成纳米球状La2O2S:Eu3+荧光粉

Eu3+离子激活的硫氧化物荧光粉是目前国内外广泛使用的CRT红色发光材料[1]. 它具有色纯度高、色彩不失真、亮度-电流饱和度特性好和稳定性高等特性, 已成为CRT不可替代的红色荧光粉. 此外, 掺杂或不掺杂Eu3+的硫氧化镧是还原SO2有害气体为S单质的优良催化剂[2,3]. 近年来兴起的纳米材料是有可能在本世纪得到广泛应用的材料; 掺杂稀土离子的硫氧化物有望应用于各种显示技术及催化剂中. 最近, 吴长峰等[4]在Y2O3∶Eu3+纳米管中观察到发射峰展宽等特性. 因而, 研究Eu3+离子激活的硫氧化镧纳米荧光粉是很有意义的.     

Ca10(Si2O7)3Cl2:Eu2+Mn2+单-基质白光荧光粉的发光性质

用高温固相法合成了颜色可调的Ca10(Si2O7)3Cl2:Eu2+Mn2+荧光粉.研究了它的发光性质和Eu2+与Mn2+之间的能量传递.Eu2+离子在Ca10(Si2O7)3Cl2晶体中形成了峰值为426 nm和523 nm的5d→4f跃迁发光,Eu2+中心向Mn2+中心传递能量,敏化Mn2+离子4T1(4G)-6A1(6S)跃迁而产生585 nm的黄光发射.黄绿蓝3个发射带叠加在单一基质中实现了白光发射.3个发射带的激发谱范围位于250-480 nm处,Ca10(Si2O7)3Cl2:Eu2+Mn2+在紫外-近紫外波段(350～410 nm)范围内有很强的激发,是一种适合InGaN管芯激发的单一基质白光LED荧光粉.     

Eu2+ & Mn2+‐Coactivated Ba3Gd(PO4)3 Orange‐Yellow‐Emitting Phosphor with Tunable Color Tone for UV‐Excited White LEDs

A novel orange‐yellow‐emitting Ba₃Gd(PO₄)₃:x Eu²⁺,y Mn²⁺ phosphor is prepared by high‐temperature solid‐state reaction. The crystal structure of Ba₃Gd(PO₄)₃:0.005 Eu²⁺,0.04 Mn²⁺ is determined by Rietveld refinement analysis on powder X‐ray diffraction data, which shows that the cations are disordered on a single crystallographic site and the oxygen atoms are distributed over two partially occupied sites. The photoluminescence excitation spectra show that the developed phosphor has an efficient broad absorption band ranging from 230 to 420 nm, perfectly matching the characteristic emission of UV‐light emitting diode (LED) chips. The emission spectra show that the obtained phosphors possess tunable color emissions from yellowish‐green through yellow and ultimately to reddish‐orange by simply adjusting the Mn²⁺ content (y) in Ba₃Gd(PO₄)₃:0.005 Eu²⁺,y Mn²⁺ host. The tunable color emissions origin from the change in intensity between the 4f–5d transitions in the Eu²⁺ ions and the ⁴T₁‐⁶A₁ transitions of the Mn²⁺ ions through the energy transfer from the Eu²⁺ to the Mn²⁺ ions. In addition, the mechanism of the energy transfer between the Eu²⁺ and Mn²⁺ ions are also studied in terms of the Inokuti–Hirayama theoretical model. The present results indicate that this novel orange‐yellow‐emitting phosphor can be used as a potential candidate for the application in white LEDs.     

Y2O3:Eu荧光粉表面包覆In2O3的研究

采用高温固相法合成了FED用Y2O3：Eu红色荧光粉，为提高其导电性，采用表面成膜包覆法对其进行了In2O3包膜研究。通过XRD，Zeta电位，SEM及低压光谱分析等检测手段分析了包膜前后Y2O3：Eu的晶体结构、电位、形貌与发光性能，探索了包膜工艺。结果表明：在Y2O3：Eu表面包覆3％的In2O3能有效改善荧光粉的发光亮度，这种改善的可能原因是包覆In2O3改善了Y2O3：Eu晶粒表面的导电性。     

Eu3+在SrZnP2O7中的发光性能和Eu3+, Bi3+间的能量传递

采用高温固相法合成了SrZnP2O7：Eu^3＋荧光粉,该荧光粉的激发主峰值位于400nm,适用于UVLED管芯的激发;在紫外激发下的发射峰由位于591和597nm（^5D0～^7F1）,616,624和629nm（^5D0～^7F2）,656nm（^5D0～^7F3）及688nm（^5D0～^7F4）4组线状峰构成,对应Eu^3＋的特征跃迁,呈现橙红色发光。分析了Eu^3＋离子浓度对样品发光效率的影响,随着浓度增加,其发射一直增强,但其发光效率已经开始减弱。Bi^3＋的加入使发光强度得到很大提高,并讨论了在SrZnP2O7基质中Bi^3＋对Eu^3＋的能量传递和敏化作用。     

Dual‐Shelled RbLi(Li3SiO4)2:Eu2+@Al2O3@ODTMS Phosphor as a Stable Green Emitter for High‐Power LED Backlights

The stability of luminescent materials is a key factor for the practical application in white light‐emitting diodes (LEDs). Poor chemical stability of narrow‐band green‐emitting RbLi(Li₃SiO₄)₂:Eu²⁺ (RLSO:Eu²⁺) phosphor hinders their further commercialization even if they have excellent stability against thermal quenching. Herein, we propose an efficient protection scheme by combining the surface coating of amorphous Al₂O₃ and hydrophobic modification by octadecyltrimethoxysilane (ODTMS) to construct the moisture‐resistant dual‐shelled RLSO:Eu²⁺@Al₂O₃@ODTMS composite. The growth mechanisms of both the Al₂O₃ inorganic layer and the silane organic layer on the phosphor surface are investigated. The results remarkably improve the water‐stability of this narrow‐band green emitter. The evaluation of the white LED by employing this composite as the green component demonstrates that RLSO:Eu²⁺@Al₂O₃@ODTMS is a promising candidate for the high‐performance display backlights, and this dual‐shelled strategy provides an alternative method to improve the moisture‐resistant property of humidity‐sensitive phosphors.     

Kristallstruktur und Absorptionsspektrum von Cs4CuSi2O7, EPR-Spektren von K6CuSi2O8 und A4CuSi2O7 (A = Rb,Cs), Vergleich mit Ägyptisch Blau,CaCuSi4O10

Crystal Structure and Absorptionspectrum of Cs₄CuSi₂O₇, EPR Spectra of K₆CuSi₂O₈ and A₄CuSi₂O₇ (A = Rb, Cs), a Comparison with Egyptian Blue, CaCuSi₄O₁₀ Cs₄CuSi₂O₇ is obtained by annealing intimate mixtures of Cs₂O, CuO and SiO₂ in sealed Ag containers at 500 °C as a greenish-blue powder which is sensitive to moisture. The crystal structure (triclinic, P1) contains chains of [CuSi₂O₇] with Cu²⁺ in square-planar coordination. The absorption and EPR spectra of Cs₄CuSi₂O₇, K₆CuSi₂O₈ and Rb₄CuSi₂O₇ are discussed in terms of the Angular-Overlap-Model (AOM) and compared with Egyptian blue, CaCuSi₄O₁₀.     

若干物理处理方法对稀土荧光粉Y2O3:Eu3+发光性能的影响

采用物理法对商品化稀土荧光粉Y2O3：Eu^3＋进行改性，考察了真空干燥温度、焙烧温度对其发光性能的影响。SEM和TEM观测结果表明，经过200℃真空干燥后，随着焙烧温度的增加，荧光粉的分散性得到改善，且以纳米颗粒为主（5～85nm）。XRD测量结果表明，随着焙烧温度的增加，Y203：Eu^3＋的结晶度逐渐增加。发射光谱测试结果表明，真空干燥温度为200℃，焙烧温度为1200℃时得到的样品的发光性能较好。     

Sr4Al14O25:Eu2+长余辉发光材料浓度淬灭研究

采用固相法制备Sr4Al14O25∶Eu2 长余辉发光粉体. 研究了Eu2 离子在铝酸盐基体中的发光行为以及浓度淬灭过程与淬灭机制. 结果表明, Eu2 在基体中形成两种不同发光中心, 分别为Eu1和Eu2, 具有不同的配位数. 在紫外光激发后, 发射波长分别为400 nm和486 nm. Eu2 离子在Sr4Al14O25中的浓度淬灭包含两个不同的淬灭过程. 随着Eu2 离子浓度的增大, Eu1格位的发光通过将能量传递给Eu2而产生淬灭现象. 随着Eu2 离子浓度的继续增大, Eu2格位的发光通过将能量传递给周围晶格缺陷而淬灭. 从实验和理论计算的结果来看, Eu2 离子在Sr4Al14O25∶Eu2 中的能量传递方式有两种, 一是光能的重吸收, 二是通过电子偶极-偶极作用交互方式传递能量.     

Y2O2S∶Eu3+,Mg2+,Ti4+长余辉材料制备中烧结条件和助熔剂的影响

Y2O2S∶Eu3+;Mg2+;Ti4+长余辉材料制备中烧结条件和助熔剂的影响;Y2O2S∶Eu3+;Mg2+;Ti4+; 烧结条件; 助熔剂; 发光性质     

纳米棒状MAl2O4:Eu2+, Dy3+(M=Sr, Ba)长余辉发光材料的制备与性能

利用硝酸铝、硝酸锶/硝酸钡、尿素为原料,以一定比例H2O/正丁醇/CTAB的混合液作传递压力的介质进行反应,然后将得到的前驱体在还原气氛下高温煅烧,得到亮度高、余辉时间长的MAl2O4∶Eu^2＋,Dy^3＋纳米结构长余辉发光材料。TEM测试表明,高温煅烧后得到的MAl2O4∶Eu^2＋,Dy^3＋均为棒状结构,其激发光谱和发射光谱均为宽带,主发射峰分别为513和498 nm,是典型的Eu^2＋5d→4f跃迁。在对单掺Eu^2＋与双掺Eu^2＋,Dy^3＋比较的过程中,明显发现双掺Eu^2＋和Dy^3＋的强度增加,且余辉增强。材料的余辉强度随时间的变化由最初的快减过程和随后的慢减过程组成,符合I=t^-1.1双曲线规律。该方法操作简单,在不同的温度和时间下均合成出了棒状MAl2O4∶Eu^2＋,Dy^3＋,不需球磨,可直接应用。     

纳米SrAl2O4:Eu2+,Dy3+长余辉发光材料的制备与性能

采用水热-均匀共沉淀法制备了纳米SrAl2O4:Eu2+,Dy3+长余辉发光材料.通过XRD、TEM、荧光光谱、热释光谱对其结构和性能进行分析.XRD结果表明所制备的SrAl2O4:Eu2+Dy3+纳米发光材料为单相,属单斜晶系.TEM测试表明纳米SrAl2O4:Eu2+,Dy3+发光材料为规则的球状粒子,粒径为50～80 nm,且分散性良好.激发和发射光谱测试表明,样品的激发光谱是峰值在356 nm 的连续宽带谱,发射光谱是峰值位于512 nm的宽带谱,与SrAl2O4:Eu2+,Dy3+粗晶材料相比,激发和发射光谱都出现了"蓝移"现象.样品的热释光峰值位于358 K,适合于产生长余辉.     

A Novel Synthesis of Alkaline Earth Silicate Phosphor Sr3MgSi2O8： Eu^2＋, Dy^3＋

A novel method for synthesizing long afterglow silicate phosphor Sr3MgSi2O8：Eu^2＋,Dy^3＋using TEOS and inorganic powders as reactants was reported. Acetic acid as a catalyzer controlled the hydrolysis of TEOS by adjusting pH value of the system. The morphologies of precursor were characterized by transmission electron microscope （TEM）. The structure and optical properties of the phosphor powders were systematically investigated by means of X-ray diffraction and spectrofluorometry. TEM images have reflected the core-shell structure and quasi-spherical morphology of the precursor particles. It was found that the single-phase Sr3MgSi2O8 crystalline structures were obtained at 1050 and 1250 ℃ for the samples prepared with the nano-coating method and the solid state reaction, respectively. The emission intensities of the phosphors prepared by the present method were higher than those by the conventional process. Also, the afterglow characteristic was better than that prepared by solid-state reaction in the comparable condition.     

Time‐Resolved Synchrotron Radiation Excited Optical Luminescence: Light‐Emission Properties of Silicon‐Based Nanostructures

The recent advances in the study of light emission from matter induced by synchrotron radiation: X‐ray excited optical luminescence (XEOL) in the energy domain and time‐resolved X‐ray excited optical luminescence (TRXEOL) are described. The development of these element (absorption edge) selective, synchrotron X‐ray photons in, optical photons out techniques with time gating coincide with advances in third‐generation, insertion device based, synchrotron light sources. Electron bunches circulating in a storage ring emit very bright, widely energy tunable, short light pulses (<100 ps), which are used as the excitation source for investigation of light‐emitting materials. Luminescence from silicon nanostructures (porous silicon, silicon nanowires, and Si–CdSe heterostructures) is used to illustrate the applicability of these techniques and their great potential in future applications.