Bismuth Interfacial Doping of Organic Small Molecules for High Performance n‐type Thermoelectric Materials

Development of chemically doped high performance n‐type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n‐type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene‐diketopyrrolopyrrole‐based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3 S cm^?1 and a Seebeck coefficient of 585 μV K^?1. The newly developed TE material possesses a maximum power factor of 113 μW m^?1 K^?2, which is at the forefront for organic small molecule‐based n‐type TE materials. These studies reveal that fine‐tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.     

Rigid Coplanar Polymers for Stable n‐Type Polymer Thermoelectrics

Low n‐doping efficiency and inferior stability restrict the thermoelectric performance of n‐type conjugated polymers, making their performance lag far behind of their p‐type counterparts. Reported here are two rigid coplanar poly(p‐phenylene vinylene) (PPV) derivatives, LPPV‐1 and LPPV‐2 , which show nearly torsion‐free backbones. The fused electron‐deficient rigid structures endow the derivatives with less conformational disorder and low‐lying lowest unoccupied molecular orbital (LUMO) levels, down to ?4.49 eV. After doping, two polymers exhibited high n‐doping efficiency and significantly improved air stability. LPPV‐1 exhibited a high conductivity of up to 1.1 S cm^?1 and a power factor as high as 1.96 μW m^?1 K^?2. Importantly, the power factor of the doped LPPV‐1 thick film degraded only 2 % after 7 day exposure to air. This work demonstrates a new strategy for designing conjugated polymers, with planar backbones and low LUMO levels, towards high‐performance and potentially air‐stable n‐type polymer thermoelectrics.     

Ionic Dopant‐Encapsulating Single‐Walled Carbon Nanotube Films with Metal‐Like Electrical Conductivity

Heavy doping is inevitable for utilizing single‐walled carbon nanotubes for wiring. However, the electrical conductivity of their films is currently as low as one tenth of the films made from typical metal pastes. Herein we report on metal‐comparable electrical conductivity from single‐walled carbon nanotube network films. We use ionic liquids and crown ether complexes for p‐type and n‐type doping, respectively. The encapsulation of counterions into carbon nanotubes promotes the conductivities in the range of 7000 S cm^?1, approximately ten times larger than those of undoped films.     

A Three‐Dimensional Porous Organic Semiconductor Based on Fully sp2‐Hybridized Graphitic Polymer

Dimensionality plays an important role in the charge transport properties of organic semiconductors. Although three‐dimensional semiconductors, such as Si, are common in inorganic materials, imparting electrical conductivity to covalent three‐dimensional organic polymers is challenging. Now, the synthesis of a three‐dimensional π‐conjugated porous organic polymer (3D p‐POP) using catalyst‐free Diels–Alder cycloaddition polymerization followed by acid‐promoted aromatization is presented. With a surface area of 801 m² g^?1, full conjugation throughout the carbon backbone, and an electrical conductivity of 6(2)×10^?4 S cm^?1 upon treatment with I₂ vapor, the 3D p‐POP is the first member of a new class of permanently porous 3D organic semiconductors.     

Air‐tolerant Fabrication and Enhanced Thermoelectric Performance of n‐Type Single‐walled Carbon Nanotubes Encapsulating 1,1′‐Bis(diphenylphosphino)ferrocene

The thermally‐triggered n‐type doping of single‐walled carbon nanotubes is demonstrated using 1,1′‐bis(diphenylphosphino)ferrocene, a novel n‐type dopant. Through a simple thermal vacuum process, the phosphine compounds are moderately encapsulated inside single‐walled carbon nanotubes. The encapsulation into SWNTs is carefully characterized using Raman/X‐ray spectroscopy and transmission electron microscopy. This easy‐to‐handle doping with air‐stable precursors for n‐type SWNTs enables the large‐scale fabrication of thermoelectric materials showing an excellent power factor exceeding approximately 240 μW mK^?2.     

An A‐D‐A′‐D‐A Conjugated Molecule Entailing Diazapentalene Unit for an n‐Type Organic Semiconductor

Conjugated molecules with low lying LUMO levels are demanding for the development of air stable n‐type organic semiconductors. In this paper, we report a new A‐D‐A′‐D‐A conjugated molecule ( DAPDCV ) entailing diazapentalene (DAP) and dicyanovinylene groups as electron accepting units. Both theoretical and electrochemical studies manifest that the incorporation of DAP unit in the conjugated molecule can effectively lower the LUMO energy level. Accordingly, thin film of DAPDCV shows n‐type semiconducting behavior with electron mobility up to 0.16 cm²?V^?1?s^?1 after thermal annealing under N₂ atmosphere. Moreover, thin film of DAPDCV also shows stable n‐type transporting property in air with mobility reaching 0.078 cm²?V^?1?s^?1.     

Electrochromic Poly(chalcogenoviologen)s as Anode Materials for High‐Performance Organic Radical Lithium‐Ion Batteries

A series of electrochromic electron‐accepting poly(chalcogenoviologen)s with multiple, stable, and reversible redox centers were used as anodic materials in organic radical lithium‐ion batteries (ORLIBs). The introduction of heavy atoms (S, Se, and Te) into the viologen scaffold significantly improved the capacity and cycling stability of the ORLIBs. Notably, the poly(Te‐BnV) anode was able to intercalate 20 Li ions and showed higher conductivity and insolubility in the electrolyte, thus contributing to a reversible capacity of 502 mAh g^?1 at 100 mA g^?1 when the Coulombic efficiency approached 100 %. The charged/discharged state of flexible electrochromic batteries fabricated from these anodic materials could be monitored visually owing to the unique electrochromic and redox properties of the materials. This study opens a promising avenue for the development of organic polymer‐based electrodes for flexible hybrid visual electronics.     

Thermoelectrical and optical properties of double wall carbon nanotubes:polyaniline containing boron n‐type organic semiconductors

The electrical conductivity, thermoelectrical, and optical properties of the polyaniline containing boron/double wall carbon nanotubes (CNTs) composites have been investigated. The electrical conductivities of the composites prepared with 1%, 5%, and 8% CNT concentrations at 300 K were found to be 5.31 × 10^?6, 2.72 × 10^?4, and 1.12 × 10^?3 (S/cm), respectively. The thermoelectrical results indicate that all the samples exhibit n‐type electrical conductivity. The optical band gaps of the samples were found to be 3.71 eV for 0% DWNT, 3.32 eV for 1% DWNT, 3.15 eV for 5% DWNT, and 3.12 eV for 8% DWNT. The obtained results suggest that the electrical conductivity of PANI‐B polymer is improved by DWNT doping. Copyright © 2008 John Wiley & Sons, Ltd.     

Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air‐Stability in High Mobility n‐Channel Field‐Effect Transistors

Electron‐transporting organic semiconductors (n‐channel) for field‐effect transistors (FETs) that are processable in common organic solvents or exhibit air‐stable operation are rare. This investigation addresses both these challenges through rational molecular design and computational predictions of n‐channel FET air‐stability. A series of seven phenacyl–thiophene‐based materials are reported incorporating systematic variations in molecular structure and reduction potential. These compounds are as follows: 5,5′′′‐bis(perfluorophenylcarbonyl)‐2,2′:5′,‐ 2′′:5′′,2′′′‐quaterthiophene ( 1 ), 5,5′′′‐bis(phenacyl)‐2,2′:5′,2′′: 5′′,2′′′‐quaterthiophene ( 2 ), poly[5,5′′′‐(perfluorophenac‐2‐yl)‐4′,4′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene) ( 3 ), 5,5′′′‐bis(perfluorophenacyl)‐4,4′′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene ( 4 ), 2,7‐bis((5‐perfluorophenacyl)thiophen‐2‐yl)‐9,10‐phenanthrenequinone ( 5 ), 2,7‐bis[(5‐phenacyl)thiophen‐2‐yl]‐9,10‐phenanthrenequinone ( 6 ), and 2,7‐bis(thiophen‐2‐yl)‐9,10‐phenanthrenequinone, ( 7 ). Optical and electrochemical data reveal that phenacyl functionalization significantly depresses the LUMO energies, and introduction of the quinone fragment results in even greater LUMO stabilization. FET measurements reveal that the films of materials 1 , 3 , 5 , and 6 exhibit n‐channel activity. Notably, oligomer 1 exhibits one of the highest μ_e (up to ≈0.3 cm² V^?1 s^?1) values reported to date for a solution‐cast organic semiconductor; one of the first n‐channel polymers, 3 , exhibits μ_e≈10^?6 cm² V^?1 s^?1 in spin‐cast films (μ_e=0.02 cm² V^?1 s^?1 for drop‐cast 1 : 3 blend films); and rare air‐stable n‐channel material 5 exhibits n‐channel FET operation with μ_e=0.015 cm² V^?1 s^?1, while maintaining a large I_on:off=10⁶ for a period greater than one year in air. The crystal structures of 1 and 2 reveal close herringbone interplanar π‐stacking distances (3.50 and 3.43 Å, respectively), whereas the structure of the model quinone compound, 7 , exhibits 3.48 Å cofacial π‐stacking in a slipped, donor‐acceptor motif.     

Poly(thieno[3,4‐b]‐1,4‐oxathiane) and poly(3,4‐ethylenedioxythiophene‐co‐thieno[3,4‐b]‐1,4‐oxathiane)/poly(styrene sulfonic sodium): Preparation,characterization, and optoelectronic performance

In this work, the asymmetrical analog of 3,4‐ethylenedioxythiophene (EDOT), thieno[3,4‐b]‐1,4‐oxathiane (EOTT), was synthesized and chemically polymerized first in aqueous solution using poly(styrene sulfonic sodium) (PSS) as the polyelectrolyte to yield poly(thieno[3,4‐b]‐1,4‐oxathiane) (PEOTT)/PSS. As‐formed film exhibited low electrical conductivity (～10^?4 S/cm). Alternatively, EOTT together with EDOT (in different molar ratio of 1:1 and 1:5) was copolymerized and the polymer poly(EOTT‐co‐EDOT)/PSS had electrical conductivity of 10^?1 S/cm. After dimethyl sulfoxide (DMSO) treatment, the electrical conductivity was enhanced to 10⁰ S/cm; however, the conductivity of the above homopolymer was reduced (～10^?5 S/cm). Raman spectroscopy was used to interpret conductivity enhancement or reduction after DMSO treatment. The conductivity decrease of PEOTT/PSS compared to poly(EOTT‐co‐EDOT)/PSS may arise from the conformational change of PEOTT backbone from the quasi‐planar to the distorted planar mode induced by PSS^–/PSSH through ionic interaction. Kinetic studies revealed that the copolymer had high coloration efficiencies (375 cm²/C), low switching voltages (?0.8 to +0.6 V), decent contrast ratios (45%), moderate response time (1.0 s), excellent stability, and color persistence. An electrochromic device employing poly(3‐methylthiophene) and poly(EOTT‐co‐EDOT)/PSS as the anode and cathode materials was also studied. From these results, poly(EOTT‐co‐EDOT)/PSS would be a promising candidate material for organic electronics. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2015 , 53, 2285–2297     

Electrochemical Treatment for Effectively Tuning Thermoelectric Properties of Free‐Standing Poly(3‐methylthiophene) Films

The degree of oxidation of conducting polymers has great influence on their thermoelectric properties. Free‐standing poly(3‐methylthiophene) (P3MeT) films were prepared by electrochemical polymerization in boron trifluoride diethyl etherate, and the fresh films were treated electrochemically with a solution of propylene carbonate/lithium perchlorate as mediator. The conductivity of the resultant P3MeT films depends on the doping level, which is controlled by a constant potential from ?0.5 to 1.4 V. The optimum electrical conductivity (78.9 S cm^?1 at 0.5 V) and a significant increase in the Seebeck coefficient (64.3 μV K^?1 at ?0.5 V) are important for achieving an optimum power factor at an optimal potential. The power factor of electrochemically treated P3MeT films reached its maximum value of 4.03 μW m^?1 K^?2 at 0.5 V. Moreover, after two months, it still exhibited a value of 3.75 μW m^?1 K^?2, and thus was more stable than pristine P3MeT due to exchange of doping ions in films under ambient conditions. This electrochemical treatment is a significant alternative method for optimizing the thermoelectric power factor of conducting polymer films.     

An Investigation of Photo‐ and Pressure‐Induced Effects in a Pair of Isostructural Two‐Dimensional Spin‐Crossover Framework Materials

Two new isostructural iron(II) spin‐crossover (SCO) framework (SCOF) materials of the type [Fe(dpms)₂(NCX)₂] (dpms=4,4′‐dipyridylmethyl sulfide; X=S ( SCOF‐6(S) ), X=Se ( SCOF‐6(Se) )) have been synthesized. The 2D framework materials consist of undulating and interpenetrated rhomboid (4,4) nets. SCOF‐6(S) displays an incomplete SCO transition with only approximately 30 % conversion of high‐spin (HS) to low‐spin iron(II) sites over the temperature range 300–4 K (T_1/2=75 K). In contrast, the NCSe^? analogue, SCOF‐6(Se) , displays a complete SCO transition (T_1/2=135 K). Photomagnetic characterizations reveal quantitative light‐ induced excited spin‐state trapping (LIESST) of metastable HS iron(II) sites at 10 K. The temperature at which the photoinduced stored information is erased is 58 and 50 K for SCOF‐6(S) and SCOF‐6(Se) , respectively. Variable‐pressure magnetic measurements were performed on SCOF‐6(S) , revealing that with increasing pressure both the T_1/2 value and the extent of spin conversion are increased; with pressures exceeding 5.2 kbar a complete thermal transition is achieved. This study confirms that kinetic trapping effects are responsible for hindering a complete thermally induced spin transition in SCOF‐6(S) at ambient pressure due to an interplay between close T_1/2 and T(LIESST) values.     

Synthesis,Structure, and Air‐stable N‐type Field‐Effect Transistor Behaviors of Functionalized Octaazanonacene‐8,19‐dione

Increasing the length of N‐heteroacenes or their analogues is highly desirable because such materials could have great potential applications in organic electronics. In this report, the large π‐conjugated N‐heteroquinone 6,10,17,21‐tetra‐((triisopropylsilyl)ethynyl)‐5,7,9,11,16,18,20,22‐octaazanonacene‐8,19‐dione (OANQ) has been synthesized and characterized. The as‐prepared OANQ shows high stability under ambient conditions and has a particularly low LUMO level, which leads to it being a promising candidate for air‐stable n‐type field‐effect transistors (FETs). In fact, FET devices based on OANQ single crystals have been fabricated and an electron mobility of up to 0.2 cm² V^?1 s^?1 under ambient conditions is reported. More importantly, no obvious degradation was observed even after one month. Theoretical calculations based on the single crystal are consistent with the measured mobility.     

First‐Principles Study on Doping of SnSe2 Monolayers

Doping is a vitally important technique that can be used to modulate the properties of two‐dimensional materials. In this work, by using first‐principles density functional calculations, we investigated the electrical properties of SnSe₂ monolayers by p‐type/n‐type and isoelectronic doping. Substitution at Sn/Se sites was found to be easy if the monolayer was grown under Sn‐/Se‐poor conditions. Substitutions at Sn sites with metallic atoms (e.g. Ga, Ge, In, Bi, Sb, Pb) resulted in positive substitution energies, which indicated that they were not effective doping candidates. For substitutions at Se sites with nonmetallic atoms, no promising candidates were found for p‐type doping (e.g., N, P, As). Among these, N and As showed positive substitution energies. Although P had a negative substitution energy under Sn‐rich conditions, it introduced trap states within the band gap. For n‐type doping (e.g., F, Cl, Br), all the calculated substitution energies were negative under both Sn‐ and Se‐rich conditions. Br was proven to be a promising candidate, because the impurity introduced a shallow donor level. Finally, for isoelectronic doping (e.g., O, S, Te), the intrinsic semiconducting features of the SnSe₂ monolayer did not change, and the contribution from the impurity to the states near the band edge increased with the atomic number.     

Selenium‐Substituted Diketopyrrolopyrrole Polymer for High‐Performance p‐Type Organic Thermoelectric Materials

Development of high‐performance organic thermoelectric (TE) materials is of vital importance for flexible power generation and solid‐cooling applications. Demonstrated here is the significant enhancement in TE performance of selenium‐substituted diketopyrrolopyrrole (DPP) derivatives. Along with strong intermolecular interactions and high Hall mobilities of 1.0–2.3 cm² V^?1 s^?1 in doping‐states for polymers, PDPPSe‐12 exhibits a maximum power factor and ZT of up to 364 μW m^?1 K^?2 and 0.25, respectively. The performance is more than twice that of the sulfur‐based DPP derivative and represents the highest value for p‐type organic thermoelectric materials based on high‐mobility polymers. These results reveal that selenium substitution can serve as a powerful strategy towards rationally designed thermoelectric polymers with state‐of‐the‐art performances.     

Hydrogen‐Bonded Organic Frameworks (HOFs): A New Class of Porous Crystalline Proton‐Conducting Materials

Two porous hydrogen‐bonded organic frameworks (HOFs) based on arene sulfonates and guanidinium ions are reported. As a result of the presence of ionic backbones appended with protonic source, the compounds exhibit ultra‐high proton conduction values (σ) 0.75× 10^?2 S cm^?1 and 1.8×10^?2 S cm^?1 under humidified conditions. Also, they have very low activation energy values and the highest proton conductivity at ambient conditions (low humidity and at moderate temperature) among porous crystalline materials, such as metal–organic frameworks (MOFs) and covalent organic frameworks (COFs). These values are not only comparable to the conventionally used proton exchange membranes, such as Nafion used in fuel cell technologies, but is also the highest value reported in organic‐based porous architectures. Notably, this report inaugurates the usage of crystalline hydrogen‐bonded porous organic frameworks as solid‐state proton conducting materials.     

Few‐Layer Nanosheets of n‐Type SnSe2

Layered p‐block metal chalcogenides are renowned for thermoelectric energy conversion due to their low thermal conductivity caused by bonding asymmetry and anharmonicity. Recently, single crystalline layered SnSe has created sensation in thermoelectrics due to its ultralow thermal conductivity and high thermoelectric figure of merit. Tin diselenide (SnSe₂), an additional layered compound belonging to the Sn‐Se phase diagram, possesses a CdI₂‐type structure. However, synthesis of pure‐phase bulk SnSe₂ by a conventional solid‐state route is still remains challenging. A simple solution‐based low‐temperature synthesis is presented of ultrathin (3–5 nm) few layers (4–6 layers) nanosheets of Cl‐doped SnSe₂, which possess n‐type carrier concentration of 2×10¹⁸ cm^?3 with carrier mobility of about 30 cm² V^?1 s^?1 at room temperature. SnSe₂ has a band gap of about 1.6 eV and semiconducting electronic transport in the 300–630 K range. An ultralow thermal conductivity of about 0.67 Wm^?1 K^?1 was achieved at room temperature in a hot‐pressed dense pellet of Cl‐doped SnSe₂ nanosheets due to the anisotropic layered structure, which gives rise to effective phonon scattering.     

Boron‐Doped,Carbon‐Coated SnO2/Graphene Nanosheets for Enhanced Lithium Storage

Heteroatom doping is an effective method to adjust the electrochemical behavior of carbonaceous materials. In this work, boron‐doped, carbon‐coated SnO₂/graphene hybrids (BCTGs) were fabricated by hydrothermal carbonization of sucrose in the presence of SnO₂/graphene nanosheets and phenylboronic acid or boric acid as dopant source and subsequent thermal treatment. Owing to their unique 2D core–shell architecture and B‐doped carbon shells, BCTGs have enhanced conductivity and extra active sites for lithium storage. With phenylboronic acid as B source, the resulting hybrid shows outstanding electrochemical performance as the anode in lithium‐ion batteries with a highly stable capacity of 1165 mA h g^?1 at 0.1 A g^?1 after 360 cycles and an excellent rate capability of 600 mA h g^?1 at 3.2 A g^?1, and thus outperforms most of the previously reported SnO₂‐based anode materials.     

A Pyrolysis‐Free Covalent Organic Polymer for Oxygen Reduction

Highly efficient electrocatalysts derived from metal–organic frameworks (MOFs) and covalent organic frameworks (COFs) for oxygen reduction reaction (ORR) have been developed. However, the subsequent pyrolysis is often needed owing to their poor intrinsic electrical conductivity, leading to undesirable structure changes and destruction of the original fine structure. Now, hybrid electrocatalysts were formed by self‐assembling pristine covalent organic polymer (COP) with reduced graphene oxide (rGO). The electrical conductivity of the hybridized COP/rGO materials is increased by more than seven orders of magnitude (from 3.06×10^?9 to 2.56×10^?1 S m^?1) compared with pure COPs. The ORR activities of the hybrid are enhanced significantly by the synergetic effect between highly active COP and highly conductive rGO. This COP/rGO hybrid catalyst exhibited a remarkable positive half‐wave (150 mV).     

Dithienylmethanone‐Based Cross‐Conjugated Polymer Semiconductors: Synthesis,Characterization, and Application in Field‐Effect Transistors

Herein, we report the synthesis, characterization, and field‐effect properties of two cross‐conjugated dithienylmethanone (DMO)‐based alternating polymers, namely, PDMO‐S and PDMO‐Se . Both polymers possess high thermal stability, good solubility, and broad absorption spectra. Their electrochemical properties were investigated using cyclic voltammetry, indicating that PDMO‐Se has higher HOMO/LUMO energy levels of −5.49/−3.49 eV than −5.57/−3.58 eV of PDMO‐S . The two polymers exhibited promising charge transport properties with the highest hole mobility of 0.12 cm² V⁻¹ s⁻¹ for PDMO‐S and 0.025 cm² V⁻¹ s⁻¹ for PDMO‐Se . AFM and 2D‐GIXRD analyses demonstrated that the PDMO‐S formed lamellar, edge‐on packing thin film with close π‐π stacking. These findings suggest that cross‐conjugated polymers might be potential semiconducting materials for low‐cost and flexible organic electronics. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 1012–1019