面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

铜晶体中类层错四面体的结构及其演化

运用分子动力学方法,研究了金属铜单晶中不同形状的Frank位错环演化形成的各种类层错四面体稳定构型.对其形成过程的细致分析表明,这些稳定构型都可以用统一的位错分解和位错反应过程来解释.模拟结果表明,在零温下各种Frank位错环存在各自的临界尺寸,小于临界尺寸的Frank位错环不能长成类层错四面体结构.对梯形、六边形等Frank位错环演化过程的模拟表明,在形成稳定类层错四面体的过程中,存在位错生长和回缩的振荡现象.振荡现象是由于位错间的排斥和吸引相互作用不同步或弹性波传播的延迟效应引起的. 关键词： 层错四面体 位错 分子动力学     

冲击条件下含纳米空洞的单晶铜的塌缩

利用分子动力学方法研究了单晶铜中不同大小的球形空洞在冲击波下的演化过程.模拟结果表明不同大小空洞的塌缩过程不同.模拟中冲击波由空洞左边扫向空洞右边.在较大尺寸的空洞塌缩过程中会产生系列的位错环.当空洞半径较小时，先在空洞的右侧形成位错环，当空洞半径增大到某一临界大小时，在空洞左右两侧同时产生位错环，当空洞半径较大时，先在空洞左侧形成位错环.当空洞左右两侧的位错环均形成以后，其右侧位错环前端的生长速度大于其左侧的.空洞半径增大，相应的位错环前端的生长速度变化不大.当空洞半径增大时，空洞中心指向位错源的矢量方     

冲击条件下含纳米空洞的单晶铜的塌缩

利用分子动力学方法研究了单晶铜中不同大小的球形空洞在冲击波下的演化过程.模拟结果表明不同大小空洞的塌缩过程不同.模拟中冲击波由空洞左边扫向空洞右边.在较大尺寸的空洞塌缩过程中会产生系列的位错环.当空洞半径较小时,先在空洞的右侧形成位错环,当空洞半径增大到某一临界大小时,在空洞左右两侧同时产生位错环,当空洞半径较大时,先在空洞左侧形成位错环.当空洞左右两侧的位错环均形成以后,其右侧位错环前端的生长速度大于其左侧的.空洞半径增大,相应的位错环前端的生长速度变化不大.当空洞半径增大时,空洞中心指向位错源的矢量方 关键词： 纳米空洞 位错环 冲击波 塑性变形     

面心立方晶体的泊松比

用简单的物理模型解释了面心立方晶体的泊松比v₁₁₀负的原因。指出了其两种泊松比v₁₁₀和v₀₀₁的数值的理论联系。实验结果和理论符合较好。 关键词：     

单晶铜在动态加载下空洞增长的分子动力学研究

冲击载荷下延性材料的损伤是材料中微空洞的产生和长大演化的结果.利用分子动力学模拟 方法对延性金属单晶铜中单个空洞在动态加载下的演化发展进行了研究，得到了空洞增长过 程中的应力分布及空洞增长演化随冲击强度变化的规律.模拟结果表明，动态加载下的前期 压缩过程对后期拉伸应力场作用下的空洞增长演化特征有不可忽视的影响，微空洞增长的阈 值则与单晶实验中层裂强度随拉伸应力作用时间减少而增加的趋势相一致. 关键词： 层裂 分子动力学 动态加载 空洞     

刃型位错形成对面心立方金属Cu体积的影响

使用分子动力学方法,采用嵌入原子势(EAM),在0K下模拟了面心立方金属Cu单晶的刃型位错,研究了刃型位错产生对晶体体积的影响.模拟结果表明,无论使用推入还是抽出原子层的方法获得刃型位错,平衡状态时刃型位错的存在使晶体体积增大.     

刃型位错形成对面心立方金属Cu体积的影响

使用分子动力学方法,采用嵌入原子势（EAM）,在0K下模拟了面心立方金属Cu单晶的刃型位错,研究了刃型位错产生对晶体体积的影响．模拟结果表明,无论使用推入还是抽出原子层的方法获得刃型位错,平衡状态时刃型位错的存在使晶体体积增大．     

纳米单晶铜中孔洞拉伸变形的分子动力学模拟

用分子动力学方法模拟了拉伸状态下纳米单晶铜中孔洞的力学行为。通过与无孔纳米单晶铜块体弹性性能的比较，可知小孔使纳米单晶铜的弹性模量显下降。弹性阶段，有孔单晶铜中无位错产生；超过其弹性极限后，位错线从四周向有孔单晶铜内部发射，位错滑移为其主要变形机制。     

α-Fe中刃型位错与空洞相互作用的分子动力学模拟

本文通过分子动力学方法（MD）,采用嵌入原子势法（EAM）,沿[111]方向插入一层（0-11）半原子面形成位错,然后在模型中插入空洞,模拟了BCC 铁中刃型位错与空洞相互作用,研究了空洞对位错运动的影响机理。模拟结果表明,当温度设定为10K时,位错运动速度快,但空洞直径的大小对位错运动速度的影响不太明显,当高温设定为100K时,由于位错线密度增大并随着空洞直径的增加位错运动速度减小,临界剪切应力也随着减小。最后将模拟计算结果与Osetsky的研究数据及连续体理论模型进行了对比分析。     

金属钛中氦团簇融合的分子动力学模拟

运用分子动力学方法研究了金属钛中氦的扩散聚集行为.在300—800K的温度范围内,模拟了钛基底中氦团簇之间的融合过程.研究发现,温度的升高会加快氦团簇的融合.在300—800K,融合后的氦团簇在所模拟的时间尺度内三维结构保持不变.模拟结果还表明,常温下氦团簇之间的吸引力是导致氦团簇融合的重要因素. 关键词： 氦团簇 团簇融合 分子动力学模拟     

冲击加载下铝中孔洞长大的微观机理分析

 利用扫描电镜和透射电镜观测了冲击加载后高纯铝损伤状态孔洞的分布,发现在冲击波加载后,高纯铝中出现了大量的孔洞,孔洞大小多集中在百纳米尺度,分布不均匀,且呈现出带状形貌,局部区域的孔洞在冲击波作用下优先发展,孔洞长大,形成微米级的大孔洞。进一步的观测发现,在孔洞周围出现了大量的位错发射,发射方向位于{111}晶面上,是面心立方金属的密排面。运用分子动力学模拟进行了对比研究,验证了位错发射方向与观测结果是一致的。     

沿〈111〉晶向冲击加载下铜中纳米孔洞增长的塑性机制研究

 用分子动力学方法计算模拟了沿〈111〉晶向冲击加载过程中，单晶铜中纳米孔洞（直径约1.3 nm）的演化及其周围区域发生塑性变形的过程。模拟结果表明，在沿〈111〉晶向冲击加载后，在面心立方（fcc）结构中的4族{111}晶面中有3族发生了滑移。伴随孔洞的增长，在所激活的3族{111}晶面上，观察到位错在孔洞表面附近区域成核，然后向外滑移，其中在剪切应力最大的〈112〉方向上，其位错速度超过横波声速，其它〈112〉方向的位错速度低于横波声速。模拟得到的位错阻尼系数范围与实验值基本符合。由于孔洞周围产生的滑移在空间比较对称，孔洞增长形貌接近球形。在恒定的冲击强度下，孔洞半径增长速率近似保持恒定，其速率随着冲击强度的增加而增大。     

Coalescence of heteroclusters Au767 and Ag767: a molecular-dynamics study

This paper studies the coalescence of heteroclusters Au767 and Ag767 by using molecular dynamics with the embedded atom method, where layer atomic energy is employed to describe the potential energy variation of per atom in different layers along radial direction. The results show that the coalescence is driven by releasing the atomic energy of the coalesced zone. The deformation, which is induced by substitutional and vacancy diffusion during the coalescence, makes the coalesced cluster disorder. If the summation of the thermal energy and the released atomic energy is large enough to keep the disorder state, the clusters form a metastable liquid droplet; otherwise, the clusters coalesce into a solid cluster when the coalesced cluster reaches the equilibrium state, and the coalesced cluster experiences liquid to solid ordering changes during the coalescence of a solid Au767 with a liquid Ag767 and a liquid Au767 with a liquid Ag767. The centre of figure of the cluster system is shifted during the coalescence process, and higher coalescence temperature causes larger shift degree.     

Influence of Defects and Crystallographic Orientation on Mechanical Behavior of Nanocrystalline Aluminium

Simulation of molecular dynamics using Embedded Atom Method (EAM) potentials is performed to investigate the mechanical properties of single crystal Al along various crystallographic orientations under tensile loading. The specimens are provided with one or two embedded circular voids to analyze the damage evolution by void growth and coalescence. The simulation result shows that the Young's modulus, yielding stress and ultimate stress decrease with the emergence of the voids. Besides, the simulations show that the single-crystal Al in different crystallographic orientations behaves differently in elongation deformations. The single-crystal Al with <100> crystallographic orientations has greater ductility than other orientated specimens. The incipient plastic deformation and the stress-strain curves are presented and discussed for further understanding of the mechanical properties of single-crystal Al.     

基于微孔洞长大惯性机制的动态拉伸断裂模型构建

 采用圆柱体胞模型分析方法,对球形微孔洞在不同加载应变率条件下的动力学响应行为进行了有限元分析,计算结果表明：在微孔洞稳定增长阶段,惯性对微孔洞的快速增长起着关键性作用,其它因素的影响基本可以忽略,微孔洞半径增长率与平均应力的平方根成正比。提出了一个微孔洞增长惯性机制的损伤度演化方程,结合逾渗软化函数描述微孔洞聚集行为,从而构建了一个新的动态拉伸断裂模型,并通过自定义材料模型子程序,把断裂模型嵌入LS-DYNA程序中,对无氧铜平板撞击层裂实验进行了数值模拟研究,计算结果与实验结果的比较令人满意,初步检验了新模型的实用性。     

Effects of void shape and orientation on the elastoplastic properties of spheroidally voided single-crystal and nanotwinned copper

ABSTRACT

Void nucleation, growth and coalescence have been identified as the leading cause of ductile damage in metallic materials. To understand the underlying deformation and damage mechanisms, extensive theoretical, experimental and simulation efforts have been attempted on spherically voided metals. In this work, molecular dynamics simulations are performed to analyze the uniaxial straining deformation behaviours of both single-crystal and nanotwinned copper materials embedded with a preexisting spheroidal void. The coupling effects among twin boundary, spheroidal void aspect ratio and orientation on unidirectional elastoplastic behaviours are systematically examined. The dislocation-induced plastic deformation mechanism is also examined and compared with the one due to a perfectly spherical cavity. Simulation results show that elastic modulus increases with both spheroidal void aspect ratio and orientation. So do the yield stress, the first peak stress and the plasticity index. Another peak stress exists for most cases, except for a prolate void embedded in nanotwinned specimens. The slope between peak stresses decreases with both the spheroidal aspect ratio and orientation. The incorporation of a twin boundary results in lower elastic modulus, higher yield strength and smaller plasticity index. For an oblate void, the twin boundary gives rise to more severe strain softening behaviour. The dislocation extraction algorithm illustrates that the continuous nucleation, propagation and reaction of dislocations emanated from both the void front and twin boundary are responsible for the ductile damage of spheroidally voided crystals. The lower dislocation densities found in nanotwinned specimens indicate the desired suppression effects of twin boundary on dislocation activities.     

无氧铜环颈缩区孔洞长大与局域化温升效应研究

 利用金相显微镜,对电磁加载下无氧铜（M态TU1）环碎片的颈缩部位进行了金相分析,观察到了颈缩区孔洞长大、汇通及孔洞壁熔化现象。利用球形孔洞模型,分析了颈缩区孔洞长大条件,发现周向偏应力更适合于描述膨胀环颈缩区的孔洞长大。据此,讨论了颈缩区的局域化温升效应。研究结果为延性金属环膨胀颈缩失稳的细观机理研究提供参考。     

Vapor Pressure Assisted Void Growth and Cracking of Polymeric Films and Interfaces

Pores and cavities form at filler particle-polymer matrix interfaces, at polymer film-silicon substrate interfaces as well as in molding compounds of IC packages. Moisture diffuses to these voids. During reflow soldering, surface mount plastic encapsulated devices are exposed to temperatures between 210 to 260°C. At these temperatures, the condensed moisture vaporizes. The rapidly expanding water vapor can create internal pressures within the voids that reach 3–6 MPa. These levels are comparable to the yield strengths of epoxy molding compounds and epoxy adhesives, whose glass transition temperatures T _g range between 150 to 300°C. Under the combined action of thermal stress and high vapor pressure (relative to the yield strength at T _g), both pre-existing and newly nucleated voids grow rapidly and coalesce. In extreme situations, vapor pressure alone could drive voids to grow and coalesce unstably causing film rupture, film-substrate interface delamination and cracking of the plastic package.Vapor pressure effects on void growth have been incorporated into Gurson's porous material model and a cohesive law. Crack growth resistance-curve calculations using these models show that high vapor pressure combined with high porosity bring about severe reduction in the fracture toughness. In some cases, high vapor pressure accelerates void growth and coalescence resulting in brittle-like interface delamination. Vapor pressure also contributes a strong tensile mode component to an otherwise shear dominated interface loading. An example of vapor pressure related IC package failure, known as popcorn cracking, is discussed.