热处理对不同溶剂制备的共混体系太阳电池性能影响

本文以poly(3-hexylthiophene) (P3HT)为电子给体材料, -phenyl C₆₁-butyric acid methyl ester (PCBM)为电子受体材料, 制备出不同溶剂形成的共混体系太阳电池.从薄膜的紫外—可见吸收光谱(UV-vis)、光致发光谱(PL)、原子力表面图形(AFM)等方面,分析了热处理对不同溶剂制备的共混体系太阳电池性能的影响.结果表明较高沸点的溶剂有利于P3HT:PCBM共混体系中P3HT的有序化排列,薄膜的紫外—可见吸收和光致发光增 关键词： 热处理 不同溶剂 太阳电池 性能     

三元P3HT:PTB7-Th:PCBM聚合物太阳能电池性能的研究

将窄带隙聚合物PTB7-Th作为第三种物质掺入到P3HT:PCBM中制备了双给体结构的三元聚合物太阳能电池, 并且通过改变PTB7-Th的浓度来研究PTB7-Th对器件性能的影响. 研究发现, 掺入PTB7-Th后, 聚合物太阳能电池的短路电流和填充因子同时获得了提高, 使器件的光电转换效率得到了改善. 进一步分析表明, PTB7-Th的加入能够拓宽活性层的吸收光谱, 增加活性层吸收的光子数目, 有利于短路电流的提升. PTB7-Th与P3HT之间以电荷转移的形式相互作用, 这种作用方式有利于激子的解离, 从而使器件的填充因子得到了提高.     

Stably dispersible P3HT/ZnO nanocomposites with tunable luminescence by in-situ hydrolysis and copolymerization of zinc methacrylate

In this paper, the copolymer shell with the internal hydrophobic polymethacrylate layer and the external hydrophilic poly(ethylene glycol) methyl ether groups was successfully bonded on the surface of ZnO nanocrystals through a simple sol–gel method, i.e., radical polymerization of zinc methacrylate (Zn(MA)₂) and poly(ethylene glycol) methyl ether methacrylate (PEGMEMA) and hydrolysis. The prepared ZnO@poly(methacrylate-co-poly(ethylene glycol) methyl ether methacrylate) (ZnO@PPEGMA) nanocrystals showed good dispersion and smaller particle size, due to the presence of copolymer shell. The optical properties of ZnO@PPEGMA nanocrystals were characterized by ultraviolet–visible (UV–vis) spectroscopy and photoluminescence (PL) spectroscopy. The results indicated that the absorption edge and PL emission in the UV region of ZnO@PPEGMA nanocrystals appeared obvious blue-shift, due to the smaller particle size. Incorporation of ZnO@PPEGMA nanocrystals into poly(3-hexylthiophene) (P3HT) matrix, the dispersion of P3HT/ZnO@PPEGMA nanocomposites was greatly improved and the nanocomposites possessed excellent photoluminescence stability. Meanwhile, it was observed that the PL emission of P3HT/ZnO@PPEGMA nanocomposites was enhanced significantly, due to the presence of copolymer shell and the improvement of compatibility of ZnO@PPEGMA in the P3HT matrix. The results showed that the P3HT/ZnO@PPEGMA nanocomposites could be potential candidates for optical applications.     

Effect of microwave irradiation on the electronic structure of ZnO

Modifying the electronic structure may allow a bulk material to efficiently absorb radiation as well as excite and emit atomic plasma. The interaction between microwaves and metal oxides is investigated by analyzing the electronic structure of ZnO with and without microwave (MW) irradiation using absorption, photoluminescence (PL), and PL excitation (PLE) spectroscopies and utilizing an ultraviolet synchrotron light source. MW irradiation lowers the energy of the absorption edge of ZnO producing defects. Additionally, MW irradiation causes a resonantly enhanced change in the intensity and peak shift of the PL band. These phenomena indicate that the defects generated by MW irradiation change the electronic structure of ZnO and the electron transition process.     

Improving performance of polymer solar cell by adjusting crystallinity and nanoscale phase separation

In this paper, we report a high-performance P3HT/PCBM bulk-heterojunction solar cell with a power conversion efficiency of 4.85% fabricated by adjusting polymer crystallinity and nanoscale phase separation using an ultrasonic irradiation mixing approach of the polymer. The results of grazing incidence X-ray diffraction, UV/Vis spectroscopic, and atomic force microscopic measurements of the P3HT/PCBM blend films reveal that the P3HT/PCBM film fabricated by ultrasonic irradiation mixing P3HT and PCBM solutions for 10 min has higher degree of crystallinity, higher absorption efficiency, and better phase separation, which altogether account for the higher charge transport properties and photovoltaic cell performance.     

Improving the performance of polymer solar cells by adjusting the crystallinity and nanoscale phase separation

In this paper, we report a high-performance P3HT/PCBM bulk-heterojunction solar cell with a power conversion efficiency of 4.85% fabricated by adjusting the polymer crystallinity and nanoscale phase separation using an ultrasonic irradiation mixing approach for the polymer. The grazing incidence X-ray diffraction, UV/Vis spectroscopic, and atomic force microscopic measurement results for the P3HT/PCBM blend films reveal that the P3HT/PCBM film fabricated by ultrasonic irradiation mixing of the P3HT and PCBM solutions for 10 min has a higher degree of crystallinity, a higher absorption efficiency, and better phase separation, which together account for the higher charge transport properties and photovoltaic cell performance.     

Poly(3‐hexylthiophene)/Gold Nanoparticle Hybrid System with an Enhanced Photoresponse for Light‐Controlled Electronic Devices

Light‐controlled electrical behavior of polymer/nanoparticle hybrid system in ambient condition is demonstrated. By embedding gold nanoparticles (Au NPs) in a poly(3‐hexylthiophene) (P3HT) matrix, the photoresponses of the nanocomposite films are enhanced. The electrical behavior of the P3HT/Au NPs nanocomposite transistors and inverters are tuned over a wide range in depletion mode. UV‐visible absorption spectroscopy, ultraviolet photoelectron spectroscopy (UPS), and steady‐state photoluminescence (PL) spectroscopy are used to analyze the nanocomposite films. The findings provide a better understanding of light‐induced threshold voltage shifts of P3HT‐based field‐effect transistors and inverters and demonstrate their potential applications in electronic signal modulation for solution‐processed integrated circuits.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

二甲基亚砜添加剂对聚合物太阳能电池性能的影响

研究了二甲基亚砜(DMSO)掺杂浓度对基于聚(3-己基噻吩)(P3HT)和(6,6)-苯基碳60丁酸甲酯(PCBM)为有源层的聚合物太阳能电池性能影响。结果表明,掺杂DMSO可以提高聚合物太阳能电池短路电流密度和填充因子。DMSO掺杂质量比为3%时,电池短路电流密度提高到7.88 mA·cm-2,填充因子为55.5%。能量转换效率达到2.54％,相比没有掺杂DMSO的电池,能量转换效率提高了17%。傅里叶变换红外光谱被用于鉴定和分析掺杂DMSO对材料P3HT∶PCBM化学性质的影响。傅里叶变换红外光谱表明,掺杂后P3HT和PCBM的化学性质都没有改变。为分析掺杂DMSO改善器件能量转换效率的原因,通过紫外-可见光谱和电流密度-电压特性曲线分别表征器件的光吸收能力以及电致发光器件的载流子迁移率。与P3HT∶PCBM薄膜相比,P3HT∶PCBM∶DMSO薄膜在可见光范围内的吸收峰有明显红移且吸收强度增强。可见光吸收的改善是实现短路电流密度提高的有力保障。太阳能电池性能的增强是因为DMSO的掺杂提高了P3HT∶PCBM的载流子迁移率和吸收光谱宽度。     

Hybrid polymer-CdS solar cell active layers formed by in situ growth of CdS nanoparticles

The integration of semiconductor nanoparticles (NPs) into a polymeric matrix has the potential to enhance the performance of polymer-based solar cells taking advantage of the physical properties of NPs and polymers. We synthesize a new class of CdS-NPs-based active layer employing a low-cost and low temperature route compatible with large-scale device manufacturing. Our approach is based on the controlled in situ thermal decomposition of a cadmium thiolate precursor in poly(3-hexylthiophene) (P3HT). The casted P3HT:precursor solid foils were heated up from 200 to 300 °C to allow the precursor decomposition and the CdS-NP formation within the polymer matrix. The CdS-NP growth was controlled by varying the annealing temperature. The polymer:precursor weight ratio was also varied to investigate the effects of increasing the NP volume fraction on the solar cell performances. The optical properties were studied by using UV–Vis absorption and photoluminescence (PL) spectroscopy at room temperature. To investigate the photocurrent response of P3HT:CdS nanocomposites, ITO/P3HT:CdS/Al solar cell devices were realized. We measured the external quantum efficiency (EQE) as a function of the wavelength. The photovoltaic response of the devices containing CdS-NPs showed a variation compared with the devices with P3HT only. By changing the annealing temperature the EQE is enhanced in the 400–600 nm spectral region. By increasing the NPs volume fraction remarkable changes in the EQE spectra were observed. The data are discussed also in relation to morphological features of the interfaces studied by Focused Ion Beam technique.     

Photoinduced optical absorption and 400-nm luminescence in low-germanium-content optical f iber preforms irradiated with ArF and KrF excimer-laser light

The optical absorption spectrum and the 400-nm photoluminescence (PL) of a 1.4-mol. % Ge photosensitive optical fiber preform subjected to high fluence of 193-nm ArF and 248-nm KrF excimer-laser irradiation are measured. The largest absorption increases occur near 200 nm in both cases, but a small net bleaching of absorption is obtained near the laser wavelength for KrF irradiations. The blue PL decreases during ArF exposure but increases with the KrF laser. In similarly excited 9-mol. % Ge fiber preforms the blue PL always decreases. A study of the PL intensity as a function of irradiating laser light intensity shows no evidence of multiple photon absorption effects.     

Increase of photoluminescence from fullerenes-doped poly (alkyl methacrylate) under laser irradiation

Increase of photoluminescence (PL) from fullerenes (C₆₀ and C₇₀)-doped poly(alkyl methacrylate), such as poly(ethyl methacrylate) (PEMA), poly(isopropyl methacrylate) (PiPMA) and poly(isobutyl methacrylate) (PiBMA), have been studied under laser irradiation with wavelength of in air. After laser irradiation, PL peaks of all fullerenes doped-polymers are broadened and blue-shifted. This PL increase depends on the fullerene concentrations. By comparing with fullerenes-doped PMMA, fullerenes-doped PEMA have the greatest PL increase among the four kinds of polymers, including PEMA, PiPMA, PiBMA and PMMA. PL intensity of C₇₀-doped polymers increases much more quickly than the corresponded C₆₀-doped polymers at the initial stage of laser irradiation. Great change on their UV-visible absorption spectra before and after laser irradiation indicate some great variation on chemical structure of fullerene molecules dispersed in polymer matrix under laser irradiation. This great PL increase may be attributed to formation of fullerene oxide-polymer and oxidized fullerene-polymer adducts due to laser-induced photochemical reactions among fullerene, oxygen and polymer.     

采用紫外光照法在磷酸盐玻璃中合成CdS/Ag复合微粒

掺杂有Ⅱ-Ⅵ族半导体纳米颗粒(如CdS)或者过渡金属(如Ag)的玻璃由于其较大的非线性光学效应而引起人们的极大兴趣,而同时掺杂有半导体/金属的复合微粒则可以进一步增强玻璃的三阶非线性效应,因此成为目前的研究热点。我们利用玻璃沉淀技术及随后的热处理和紫外光还原技术制备了含高浓度(1%)Ag微粒的玻璃,并采用X射线衍射分析了其物相,用高分辨扫描电镜分析了其形貌,以及测试了其吸收和发光性能。从CdS/Ag复合微粒的扫描照片可以发现晶粒均匀分布在玻璃中,尺寸约为1μm。X射线衍射发现经过热处理和紫外光照的样品衍射峰中含有CdS和Ag,而只进行热处理的样品则只含有CdS,未处理的样品则显非晶态。CdS/Ag复合微粒的吸收峰呈现典型的表面等离子共振峰(420nm)以及CdS的峰(600nm),只含有CdS微粒的样品的吸收峰则在480nm附近,未处理的样品在320nm附近有一个吸收峰,这可能是由于样品在快速冷却过程中的微小晶化造成的。只含有CdS微粒的样品有三个明显的发光峰,然而CdS/Ag复合微粒的发过峰则消失。我们提出了共振能量转移机制来解释该现象。讨论了紫外光照还原Ag微粒的机制。可以认为通过紫外光照,CdS表面的电子被激发出来还原Ag+,从而形成银颗粒,伴随着空穴则被表面缺陷所捕获。     

聚酰亚胺薄膜的电致发光和光致发光

测量了氙灯辐照后聚酰亚胺(PI)薄膜的光致发光(PL)强度、PL谱和氙灯辐照后直流高电场下PI薄膜的电致发光(EL)强度、EL谱、XRD谱和吸收光谱,研究了其EL、PL特性与微观结构的关系.结果表明:PI薄膜的PL强度随测量时间呈指数衰减,EL强度随场强呈指数增长;辐照39 h后,PI的预击穿场强为2.56MV/cm,...     

高温氧化多孔硅的电子束辐照效应

通过高温氧化处理得到的多孔硅,其阴极射线发光谱呈现明显的三峰结构。峰强随电子束辐照时间而下降。对光致发光很弱的样品,电子束辐照后光致发光明显地增强。红外透射谱及Raman谱分析表明样品基本上成为SiO_x.进一步分析指出三峰可能来源于SiO_x中的缺陷中心发光。电子束辐照在SiO_x禁带中引进了一些缺陷能级,通过这些能级使得紫外线可激发样品发光,出现光致发光增强的现象。     

离子注入/辐照引起Al2O3单晶的改性研究

600K温度下用110keV的He^＋,Ne^＋,Ar^＋离子注入及320K温度下用230MeV的^208Pb^27＋辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450nm处出现了强的发光峰。且所有5×10^16ion／cm^2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100nm入射深度以内形成了高浓度的小空洞（1-2nm）,在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460-510cm^-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1000—1300cm^-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。Single crystal sapphire （Al2O3 ） samples were implanted at 600 K by He, Ne and Ar ions with energy of 110 keV to doses ranging from 5 × 10^16 to 2× 10^17 ion/cm^2 or irradiated at 320 K by ^208Pb^27＋ ion with energy of 1.1 MeV/u to the fluences ranging from 1 × 10^12 to 5 × 10^14 ion/cm^2. The modification of structure and optical properties induced by ion implantation or irradiation were analyzed by using photoluminescence（PL） and Fourier transformation infrared spectrum（FIR） spectra and transmission electron microscopy（ TEM ） measurements. The PL measurements showed that absorption peaks located at 375,413 and 450 nm appeared in all the implanted or irradiated samples, the PL intensities reached up to the maximum for the 5 × 10^16 ion/cm^2 implanted samples. After Pb-ion irradiation, a new peak located at 390 nm formed. TEM analyses showed that small size voids,（ 1--2 nm） with high density were formed in the region from the surface till to about 100 nm in depth and also large size Nebubble formed in the Ne-doped region. From the obtained FTIR spectra, it was found that Pb-ion irradiation induced broadening of the absorption band in 460-510 cm^-1 and position shift of the absorption band in 1 000- 1 300 cm^- 1 towards to high wavenumber. The possible damage mechanism in single crystal sapphire induced by energetic ion implantation or irradiation was briefly discussed.     

Effect of 160 MeV Ni ion irradiation on PbS quantum dots

PbS quantum dots of average size 10 nm are encapsulated in a matrix (polyvinyl alcohol (PVA)) following chemical route. They are irradiated with 160 MeV Ni¹²⁺ ion beam with fluences 10¹²-10¹³ ions/cm². Red shift in the absorption response in the optical absorption spectra reveal size enhancement of the quantum dots after irradiation and was confirmed by transmission electron microscopy (TEM). Photoluminescence (PL) study was carried out with excitation wavelength 325 nm on both unirradiated and irradiated samples at different fluences and fluence-dependent surface states and excitonic emission is observed in the PL study. The Huang-Rhys coupling constant decreases significantly after swift heavy ion (SHI) irradiation and shows a decreasing trend with increase in ion fluence.     

Preparation of poly(3-hexylthiophene)/graphene nanocomposite via in situ reduction of modified graphite oxide sheets

Poly(3-hexylthiophene) (P3HT)/graphene nanocomposites were facilely prepared via an in situ reduction of modified graphite oxide (mGO) in the presence of P3HT. The chemical and aggregated structures of the P3HT/mGO nanocomposites were successfully characterized by means of atomic force microscope (AFM), transmission electron microscope (TEM), photoluminescence (PL), Raman spectra, X-ray photoelectron spectroscopy (XPS) and UV-vis measurements. Coated by P3HT, reduced modified graphite oxide (re-mGO) could significantly improve their processing problem in common organic solvent. It was shown that P3HT chains were attached to re-mGO sheets closely and there existed the pi-pi interaction between P3HT and re-mGO. The P3HT/mGO nanocomposites exhibited good dispersion in chloroform and show high storage stability (>20 days). This finding provides an efficient method for fabricating a light energy conversion materials with new optical and electrical properties, combining excellent mechanics, heat-stabilization properties of graphene and excellent optical, electrical, processing and film forming properties of soluble polythiophene materials.     

Fe3O4 nanoparticle loaded paclitaxel induce multiple myeloma apoptosis by cell cycle arrest and increase cleavage of caspases in vitro

We experimentally and theoretically characterize back-scattering and extinction of Ag nanoparticle (AgNP) arrays on both Si wafer substrates and optically-thick Ag substrates with and without organic poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) bulk-heterojunction thin film coatings. A strong red-shift in back-scattered light wavelength occurs from AgNP arrays on Si as a function of increasing mean nanoparticle diameter (ranging from 30 to 90 nm). Back-scattering from the AgNP array is notably quenched in the wavelength range of strong P3HT absorption when the organic layer is applied. However, back-scattering is enhanced to a degree relative to the uncoated AgNP array on Si at wavelengths greater than the absorption band edge of P3HT. For comparison, the optical properties of AgNPs on an optically-thick Ag substrate are reported with and without P3HT:PCBM thin film coatings. On the reflective Ag substrates, a significant enhancement (by a factor of 7.5) and red-shift of back-scattered light occurred upon coating of the AgNPs with the P3HT:PCBM layer. Additionally, red-edge extinction was enhanced in the P3HT:PCBM layer with the presence of the AgNPs compared to the planar case. Theoretical electromagnetic simulations were carried out to help validate and explain the scattering and extinction changes observed in experiment. Both increasing nanoparticle size and an increasing degree of contact with the Si substrate (i.e., effective index of the nanoparticle environment) are shown to play a role in increasing back- and forward-scattering intensity and wavelength, and in increasing absorption enhancements in both the organic and Si layers. AgNPs placed at the P3HT:PCBM/Si interface give rise to absorption increases in P3HT of up to 18 %, and only enhance Si absorption at wavelengths longer than the absorption band edge of P3HT (by almost 90 % in the 660–1,200 nm wavelength range). These results provide insight into how metal nanoparticles placed near an organic/inorganic interface can be employed for light management in tandem or hybrid organic/inorganic thin-film semiconductor configurations for solar energy harvesting applications or light detection applications.     

Enhancing light absorption for organic solar cells using front ITO nanograting and back ultrathin Al layer

To address the discrepancy between carrier collection and light absorption of organic solar cells caused by the limited carrier mobility and optical absorption coefficient for the normally employed organic photoactive layers, a light management structure composed of a front indium tin oxide(ITO) nanograting and ultrathin Al layer inserted in between the photoactive layer and the electron transport layer(ETL) is introduced. Owing to the antireflection and light scattering induced by the ITO nanograting and the suppression of light absorption in the ETL by the inserted Al layer, the light absorption of the photoactive layer is significantly enhanced in a spectral range from 400 nm to 650 nm that also covers the main energy region of solar irradiation for the normally employed active materials such as the P3HT:PC_(61) BM blend. The simulation results indicate that comparing with the control device with a planar configuration of ITO/PEDOT:PSS/P3HT:PC_(61) BM(80-nm thick)/Zn O/Al, the short-circuit current density and power conversion efficiency of the optimized light management structure can be improved by 32.86% and 34.46%. Moreover, good omnidirectional light management is observed for the proposed device structure. Owing to the fact that the light management structure possesses the simple structure and excellent performance, the exploration of such a structure can be believed to be significant in fabricating the thin film-based optoelectronic devices.