Structural and local electrical properties of AlInN/AlN/GaN heterostructures

GaN layers and Al_1−xIn_xN/AlN/GaN heterostructures have been studied by scanning probe microscopy methods. Threading dislocations (TDs), originating from the GaN (0 0 0 1) layer grown on sapphire, have been investigated. Using Current-Atomic Force Microscopy (C-AFM) TDs have been found to be highly conductive in both GaN and AlInN, while using semi-contact AFM (phase-imaging mode) indium segregation has been traced at TDs in AlInN/AlN/GaN heterostructures. It has been assessed that In segregation is responsible for high conductivity at dislocations in the examined heterostructures.     

Charge transport studies on chemically grown manganite based heterostructures

In this communication, we have successfully fabricated mixed valent La_0.7Ca_0.3MnO₃ (LCMO) manganite based (i) ZnO/LCMO/LAO and (ii) LMO/LCMO/LAO (LMO: LaMnO_3–d thin layer; LAO: LaAlO₃ substrate) thin film heterostructures using chemical solution deposition (CSD) method. 100 nm LCMO layer was initially grown on single crystalline (100) LAO substrate followed by the growth of 50 nm ZnO and LMO layers separately on the two different heterostructures. In the present study, upper layers of ZnO and LMO were intentionally prepared at 700 °C for 12 h under air environment, thereby some naturally created oxygen vacancies are expected to be present in their lattices. Presence of oxygen vacancies makes ZnO and LMO layers as n–type oxides in the heterostructures. Temperature dependent current–voltage (I–V) characteristics and interface resistivity (under different applied electric fields across interface only) were carried out to understand their charge transport behavior. A strong effect of electric field on the resistivity behavior has been observed due to a reasonable electrically polarizable (active) nature of ZnO and LMO thin layers. Zener double exchange (ZDE) polynomial law has been employed to understand various scattering processes as source of resistivity across, both, ZnO/LCMO and LMO/LCMO interfaces. Transport properties and charge conduction mechanisms have been discussed and compared for both the interfaces in the context of interface state and barrier between electrically active layer and LCMO film. Also, power consumption criteria have been discussed in detail for the presently studied heterostructures for their practical device applications such as field effect devices, memory devices, read–write head devices or any other spintronic devices.     

Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1−xN/GaN heterostructures

Electron–electron interaction effect of the two-dimensional electron gas (2DEG) in Al_xGa_1−xN/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be −0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in Al_xGa_1−xN/GaN heterostructures, is much higher than the theoretical prediction.     

Optics with single nanowires

Semiconducting nanowire heterostructures represent a new class of nanostructures that offer unprecedented freedom in material design. The position, diameter, composition and doping can be controlled with precision and complex structures such as core-shell and branched wires have already been demonstrated. Here we show that heterostructures in nanowires can define quantum emitters and that single spins can be addressed optically. We also present results on electrically contacted nanowires. The operation of single nanowires as light emitting diode or photodetector is demonstrated. To cite this article: V. Zwiller et al., C. R. Physique 9 (2008).     

Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates

The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of Ga_zIn_1–zP_xSbyAs_1–x–y/InAs isoperiodic heterostructures have been investigated.     

Confinement of polar optical phonons in quasi-one-dimensional Wurtzite GaN-based quantum well wires: propagating and half-space phonon modes

With the aid of the macroscopic dielectric continuum and Loudon’s uniaxial crystal models, the propagating (PR) and half-space (HS) optical phonon modes and corresponding Fröhlich-like electron-phonon interaction Hamiltonians in a quasi-one-dimensionality (Q1D) wurtzite quantum well wire (QWW) structure are derived and studied. Numerical calculations on a wurtzite GaN/A_l0.15Ga_0.85N QWW are performed, and discussion is focused mainly on the dependence of the frequency dispersions of PR and HS modes on the free wave-number k _z in the z-direction and on the azimuthal quantum number m. The calculated results show that, for given k _z and m, there usually exist infinite branches of PR and HS modes in the high-frequency range, and only finite branches of HS modes in the low-frequency range in wurtzite QWW systems. The reducing behaviors of the PR modes to HS modes, and of the HS mode to interface phonon mode have been observed clearly in Q1D wurtzite heterostructures. Moreover, the dispersive properties of the PR and HS modes in Q1D QWWs have been compared with those in Q2D quantum well structures. The underlying physical reasons for these features have also been analyzed in depth.     

Photoluminescence and exciton resonances over the scattered light in multiphonon spectra of resonant scattering in the CdTe/ZnTe superlattices with narrow quantum wells

Photoluminescence and Raman scattering spectra in CdTe/ZnTe heterostructures and superlattices with narrow quantum wells (4.8–9.2 Å) in a temperature range of 5–300 K have been measured. The temperature dependences of the intensity of exciton luminescence in isolated quantum wells have been studied, and the thermal activation energies associated with the effective barriers for electrons and holes have been determined. In CdTe/ZnTe heterostructures, the binding energies of an exciton with a heavy hole have been determined as functions of the quantum well width. The multiphonon Raman spectra that exhibit distinctive features, such as the weak intensity of nLO phonon lines of ZnTe (n < 8), the absence of their dependence on the number n (n > 2), and the multiple participation in scattering of acoustic LA phonons with large wave vector, have been investigated. The results have been explained based on the concept of the relaxation of hot excitons over the exciton band.     

Alloy-disorder scattering of the interacting electron gas in quantum wells and heterostructures of Al x Ga1 − x As

The question whether alloy disorder is screened or unscreened is of fundamental importance. Therefore, we calculate the mobility of the interacting two-dimensional electron gas as realized in Al _x Ga_{1 ? x} As quantum wells and heterostructures in the presence of alloy-disorder scattering. For the screening we use the randomphase approximation and we include many-body effects due to exchange and correlation. We propose to determine the alloy disorder potential V _AD from mobility measurements. If we use V _AD = 1.04 eV we can explain recent experimental results obtained for quantum wells and heterostructures with ultrahigh mobility. From the anomalous linear temperature dependence of the mobility measured in heterostructures, we conclude that the alloy disorder is screened. More experiments are needed to confirm the screening of the alloy disorder and we propose some measurements.     

Bulk and surface excitations in magnetoactive periodic semiconductor heterostructures

We have theoretically investigated the dispersion characteristics of bulk and surface excitations in a magnetoactive periodic semiconductor heterostructure (PSH) using a local theory in the nonretardation limit (c → ∞). The computation has been performed treating the unit cell of the heterostructure as made up of an array of alternate n-type GaAs (in A-type region) and n-type InSb (in B-type region) slabs of equal widths. The presence of the high magnetostatic field (B₀) gives a rich spectrum of the bulk excitations. A new type of surface polariton mode is found in a complete analogy with the one occurring at the surface of a semiconductor superlattice as predicted by Giuliani and Quinn. The frequency-dependent inverse penetration depth for this new magnetoplasma surface polariton has also been computed as a function of wave vector component parallel to the layers. We discuss our analytical and numerical results in the light of the recent work on heterostructures/superlattices.     

Influence of the form of structure factor on the mobility of nondegenerate two-dimensional electrons

The temperature dependences of the mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions in Al _x Ga_{1 ? x} As/GaAs heterostructures have been investigated. The cases where the influence of the first maximum of the structure factor on the scattering of electrons begins to dominate with increasing temperature have been considered. It has been found that the mobility of two-dimensional electrons decreases with increasing correlations in the spatial distribution of impurity ions. The influence exerted by the correlations and the width of the spacer layer on this effect has been analyzed.     

Influence of correlations in a flat distribution of impurity ions on the mobility of two-dimensional electrons at low temperatures

The temperature dependences of the electrical resistivity of degenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a spacer of arbitrary width have been investigated using the Al _x Ga_{1 ? x} As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane.     

Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.     

Spin transport properties in Fe-doped graphene/hexagonal boron-nitride nanoribbons heterostructures

By combining non-equilibrium Green's function (NEGF) with density functional theory (DFT), we systematically study the spin-related transport properties of the heterostructures composed of graphene and hexagonal boron-nitride (h-BN) when the metal Fe is doped different positions of the heterostructures interface. The results show that the heterostructures exhibit obvious spin-filtering effect (SFE) and negative differential resistance (NDR) due to the different absorbing positions of the metal Fe. And the spin filtering ratio can reach more than 90% in a specific bias voltage range. Moreover, spin-rectifying behaviors are detected in the heterostructures. Whether it is for the design of multifunctional devices or the synthesis of spintronic devices, these findings will have some reference value.     

Mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions

The temperature dependences of the inverse mobility of nondegenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a narrow spacer have been investigated using the Al _x Ga_{1 ? x} As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane. The influence of the form of the structure factor in the electron mobility has been considered.     

Luminescence and electrical properties of diode Si/SiGe:Er/Si heterostructures

The diode Si/Si_{1 ? x} Ge _x :Er/Si heterostructures grown by sublimation molecular-beam epitaxy in a german atmosphere have been investigated. The electrical properties of Si_{1 ? x} Ge _x :Er heterolayers, the currentvoltage characteristics of the structures, and their photo-and electroluminescent properties in the forward-and reverse-bias modes have been analyzed. A relationship is established between the heterolayer parameters and the luminescence response features and characteristics of diode structures.     

Photocurrent growth and decay behavior of crystal violet dye-based photoelectrochemical cell in photovoltaic mode

Crystal violet dye-doped photoelectrochemical cells (PEC) show different and unusual behavior in their electrical and optical characteristics. In this work, we have studied the photocurrent growth and decay behavior of crystal violet dye-based solid-state PEC in photovoltaic mode. Photocurrent growth and decay are studied for different intensities of illumination. They follow a power law relationship with time which is of the form I _ph?～?t ^±α , where I _ph is the photocurrent and α is a constant. The positive and negative signs are used to indicate the growth and decay of the photocurrent, respectively. This power law relation is explained by dispersive transport model which was originally developed by Scher and Montrol and subsequently modified by different workers. The constant, α is termed as dispersion parameter, and it is related to the disorder. It is observed that the value of this parameter depends on the intensity of incident illumination. Dependence of this dispersion parameter on incident intensity is studied in this work. Variations of α with intensity for growth and decay have been discussed. In our system, the value of α is 0.325?±?0.005 for decay whereas, in the growth region, its value varies from 0.55 to 0.33, when intensity varies from minimum to maximum. The value of the disorder parameter, α, decreases as the intensity of illumination increases for growth of current whereas it remains nearly constant for decay of current. This work will be helpful in understanding the charge transport mechanism of dye-based PEC cell.     

Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

Films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) on Si substrates have been grown by liquid phase epitaxy. The structural features of the films have been investigated using X-ray diffraction. The temperature behavior of current-voltage characteristics and the spectral dependence of the photocurrent for the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have been analyzed. The grown epitaxial films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have a perfect single-crystal structure with a (111) orientation and a subgrain size of 60 nm. In the epitaxial films at the Si-SiO₂ interfaces between silicon subgrains and SiO₂ nanocrystals, where there are many sites with a high potential, the Sn ions with a high probability substitute for the Si ions and encourage the formation of Sn nanocrystals with different orientations and, as follows from the analysis of the X-ray diffraction patterns, with different sizes: 8 nm (for the (101) orientation) and 12 nm (for the (200) orientation). The current-voltage characteristics of the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) are described by the exponential law J = J ₀exp(qV/ckT) at low voltages (V < 0.2 V) and the square law J = (9qμ _p τ _p μ _n N _d /8d ³)V ² at high voltages (V > 1 V). These results have been explained by the drift mechanism of charge carrier transport in the electrical resistance relaxation mode.     

Electron spin resonance properties of semiconductor/granular film heterostructures with cobalt nanoparticles in millimeter waveband

Ferromagnetic resonance spectra (FMR) on heterostructures of amorphous silicon dioxide films containing cobalt nanoparticles, (SiO₂)_100−xCo_x, grown on GaAs and Si substrates have been investigated over a frequency range of 37–41 GHz at room temperature. The FMR linewidth and saturation magnetization dependencies on the cobalt concentration have been analyzed. The impact of the semiconductor type on the FMR linewidth ΔH and a sharp increase in ΔH with a decreasing concentration of cobalt nanoparticles have been noted. The effect of considerable FMR linewidth broadening has been accounted for by the spin-polarized relaxation mechanism.     

Selection of a LGp0-shaped fundamental mode in a laser cavity: Phase versus amplitude masks

Laser beams of a single high-order transverse mode have been of interest to the laser community for several years now. In order to achieve such a mode as the fundamental mode of the cavity, mode selecting elements in the form of a phase or amplitude mask are often placed inside the resonator. Such elements have the role to impose one or several zeros of intensity of the desired mode. In this paper, we consider the use of the most simple phase (amplitude) mask which is a transparent π-plate (absorbing ring) set inside a diaphragmed laser cavity for selecting a pure LG_p0 mode of radial order, p. We analyse, for each type of mask, the origin of the transverse mode selection, and contrary to what one might expect we find that it is not necessary the absorbing mask that results in the highest losses.     

Residual strain and alloying effects on the vibrational properties of step-graded InxAl1−xAs layers grown on GaAs

Lattice-relaxed In_xAl_1−xAs-graded buffer layers grown by MBE on GaAs substrate have been studied by micro-Raman scattering and photoluminescence (PL). In these heterostructures, the indium composition was gradually increased in six or four intermediate layers each of 100 nm thickness. The alloying effect in the In_xAl_1−xAs layers has been interpreted using the modified random element isodisplacement (MREI) formalism. The dependence in the MREI model of the longitudinal optical (LO) phonon energy and the In composition in the InAlAs alloy with PL measurements and Raman analysis allow the evaluation of disorder degree and give the In composition in the InAlAs active layers. The obtained InAs- and AlAs-like phonon frequencies from the fitting of Raman spectra are in reasonable agreement with those calculated according to the MREI model. Raman spectra show that InAs-like phonon frequencies are not strongly dependent either on the buffer structure or on the residual strain in the active layers. Using the AlAs-like LO phonon frequency shifts, we have calculated the residual strain in the In_xAl_1−xAs active layer. Raman results show that the slope of the grade is an important parameter that allows the growth of samples with good quality. The lower residual strain value was obtained by thick buffer with a smaller grading rate. PL measurements show that In compositions of active layers of the different studied samples are slightly higher than those measured during growth.