Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices

A non-volatile flash memory device based on metal oxide semiconductor (MOS) capacitor structure has been fabricated using platinum nano-crystals(Pt–NCs) as storage units embedded in HfAlO_x high-k tunneling layers. Its memory characteristics and tunneling mechanism are characterized by capacitance–voltage(C–V) and flat-band voltage-time(ΔV_FB-T) measurements. A 6.5 V flat-band voltage (memory window) corresponding to the stored charge density of 2.29 × 10¹³ cm⁻² and about 88% stored electron reserved after apply ±8 V program or erase voltage for 10⁵ s at high frequency of 1 MHz was demonstrated. Investigation of leakage current–voltage(J–V) indicated that defects-enhanced Pool-Frenkel tunneling plays an important role in the tunneling mechanism for the storage charges. Hence, the Pt–NCs and HfAlO_x based MOS structure has a promising application in non-volatile flash memory devices.     

Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells

In c-Si solar cells, surface recombination velocity increases as the wafer thickness decreases due to an increase in surface to volume ratio. For high efficiency, in addition to low surface recombination velocity at the rear side, a high internal reflection from the rear surface is also required. The SiO_xN_y film with low absorbance can act as rear surface reflector. In this study, industrially feasible SiO₂/SiO_xN_y stack for rear surface passivation and screen printed local aluminium back surface field were used in the cell structure. A 3 nm thick oxide layer has resulted in low fixed oxide charge density of 1.58 × 10¹¹ cm⁻² without parasitic shunting. The oxide layer capped with SiO_xN_y layer led to surface recombination velocity of 155 cm/s after firing. Using single layer (SiO₂) rear passivation, an efficiency of 18.13% has been obtained with V_oc of 625 mV, J_sc of 36.4 mA/cm² and fill factor of 78.7%. By using double layer (SiO₂/SiO_xN_y stack) passivation at the rear side, an efficiency of 18.59% has been achieved with V_oc of 632 mV, J_sc of 37.6 mA/cm², and fill factor of 78.3%. An improved cell performance was obtained with SiO₂/SiO_xN_y rear stack passivation and local BSF.     

SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator

We have fabricated indium–gallium–zinc (IGZO) thin film transistor (TFT) using SiO_x interlayer modified aluminum oxide (AlO_x) film as the gate insulator and investigated their electrical characteristics and bias voltage stress. Compared with IGZO-TFT with AlO_x insulator, IGZO-TFT with AlO_x/SiO_x insulator shows superior performance and better bias stability. The saturation mobility increases from 5.6 cm²/V s to 7.8 cm²/V s, the threshold voltage downshifts from 9.5 V to 3.3 V, and the contact resistance reduces from 132 Ωcm to 91 Ωcm. The performance improvement is attributed to the following reasons: (1) the introduction of SiO_x interlayer improves the insulator surface properties and leads to the high quality IGZO film and low trap density of IGZO/insulator interface. (2) The better interface between the channel and S/D electrodes is favorable to reduce the contact resistance of IGZO-TFT.     

Room-temperature and solution-processed vanadium oxide buffer layer for efficient charge injection in bottom-contact organic field-effect transistors

We introduce a room temperature and solution-processible vanadium oxide (VO_x) buffer layer beneath Au source/drain electrodes for bottom-contact (BC) organic field-effect transistors (OFETs). The OFETs with the VO_x buffer layer exhibited higher mobility and lower threshold voltages than the devices without a buffer layer. The hole mobility with VO_x was over 0.11 cm²/V with the BC geometry with a short channel length (10 μm), even without a surface treatment on SiO₂. The channel width normalized contact resistance was decreased from 98 kΩ cm to 23 kΩ cm with VO_x. The improved mobility and the reduced contact resistance were attributed to the enhanced continuity of pentacene grains, and the increased work function and adhesion of the Au electrodes using the VO_x buffer layer.     

Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films

In this investigation the composite SiO_x〈Ti〉 films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO₂) and Тi powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiO_x〈Ti〉 layers with resistance (for monopixel of 0.8 × 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to −2.22% K⁻¹. IR spectrum of SiO_x〈Ti〉 film is characterized by a broad absorption band in the range of 8–12 μm which is associated with the Si–O–Si stretching mode.Investigations of the effect of gamma irradiation on SiO_x〈Ti〉 films have shown that their temperature-sensitive properties, in particular TCR does not change up to a dose of 10⁶ Gy.These results suggest that SiO_x〈Ti〉 films can be used as materials for production of radiation-resistant thermosensitive detectors operated in radiation fields of γ-radiation and combining functions of IR-absorption and formation of an electric signal.     

SiO2 surface defect centers studied by AES

A theoretical model is proposed on how a Si dangling bond associated with an oxygen vacancy on a SiO₂ surface (E_s′ center) should be observed by Auger electron spectroscopy (AES). The Auger electron distribution N_A(E) for the L₂₃VV transition band is calculated for a stoichiometric SiO₂ surface, and for a SiO_x surface containing Si-(e^?O₃) coordinations. The latter is characterized by an additional L₂₃VD transition band, where D is the energy level of the unpaired electron e^?. The theoretical N_A(E) spectra are compared with experimental N(E) spectra for a pristine, and for an electron radiation damaged quartz surface. Agreement with the theoretical model is obtained if D is assumed to lie ≈2 eV below the conduction band edge. This result shows that AES is uniquely useful in revealing the absolute energy level of localized, occupied surface defect states. As the L₂₃VD transition band (main peak at 86 eV) cannot unambiguously be distinguished from a SiSi₄ coordination L₂₃VV spectrum (main peak at 88 eV), supporting evidence is presented as to why we exclude a SiSi₄ coordination for our particular experimental example. Application of the Si-(e^?O₃) model to the interpretation of SiO₂Si interface Auger spectra is also discussed.     

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

The use of SiO₂/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can be problematic due to high interface state density (D_it) and low field-effect mobility (μ_fe). Here, we present a tetra-ethyl-ortho-silicate (TEOS)-based low-pressure chemical vapor deposition (LPCVD) method for fabricating the gate oxide of 4H–SiC MOSFETs using nitric oxide post-deposition annealing. SiO₂/4H–SiC MOS capacitors and MOSFETs were fabricated using conventional wet and TEOS oxides. The measured effective oxide charge density (Q_eff) and D_it of the TEOS-based LPCVD SiO₂/4H–SiC MOS capacitor with nitridation were 4.27 × 10¹¹ cm⁻² and 2.99 × 10¹¹ cm⁻²eV⁻¹, respectively. We propose that the oxide breakdown field and barrier height were dependent on the effective Q_eff. The measured μ_fe values of the SiO₂/4H–SiC MOSFETs with wet and TEOS oxides after nitridation were, respectively, 11.0 and 17.8 cm²/V due to the stable nitrided interface between SiO₂ and 4H–SiC. The proposed gate stack is suitable for 4H–SiC power MOSFETs.     

Support effects on the nucleation, growth, and morphology of gold nano-clusters

The nucleation, growth, and morphology of gold (Au) clusters on an irreducible oxide (SiO₂), highly reduced TiO_x (x ∼ 1), and less reduced TiO_x (x ∼ 2) were investigated by scanning tunneling microscopy (STM) with the goal of understanding the relationship between the nucleation, growth, and morphology of Au clusters and the reducibility of the oxide support. Au clusters show preferential nucleation and growth on a TiO_x surface compared to a SiO₂ surface. In addition, higher densities of Au clusters were found on highly reduced TiO_x, suggesting that reduced Ti sites play a role as an active site for the nucleation and growth of Au clusters.     

Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate

The junction properties of tunnel silicon oxide (SiO_x) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ～0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V_bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiO_x, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiO_x layer. The C of depleting layer deviates from the normal linear curve in the 1/C²-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C^2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the V_bi can still be estimated. We find that the V_bi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.     

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si_1−xGe_x heterostructures with two-dimensional electron channel (n_e≥10¹² cm⁻²) in an elastically strained silicon layer of nanometer thickness have been studied. The detailed calculation of the potential and of the electrons distribution in layers of the structure was carried out to understand the observed phenomena. The dependence of the tunneling transparency of the barrier separating the 2D and 3D transport channels in the structure, was studied as a function of the doping level, the degree of blurring boundaries, layer thickness, degree of relaxation of elastic stresses in the layers of the structure. Tunnel characteristics of the barrier between the layers were manifested by the appearance of a tunneling component in the current–voltage characteristics of real structures. Instabilities, manifested during the magnetotransport measurements using both weak and strong magnetic fields are explained by the transitions of charge carriers from the two-dimensional into three-dimensional state, due to interlayer tunneling transitions of electrons.     

New mechanisms of localization of charge carriers in nanosilicon

This paper reports on the results of investigations into the spectral dependences of thermally stimulated luminescence and the temperature dependences of tunneling luminescence in highly oxidized porous silicon samples. Two new mechanisms of localization of charge carriers are considered in terms of the specific features revealed in the spectral dependences of the thermally stimulated luminescence and nonmonotonic temperature dependences of the Becquerel index of tunneling luminescence decay. The proposed mechanisms of charge carrier localization are associated with structure heterogeneities inherent in these objects, namely, superficial SiO_x oxide shells (0<x≤2) enclosing silicon particles and an undulating structure of silicon wires.     

Structure of Na2O·MO·SiO2·CaF2 (M=Mg,Ca) oxyfluoride glasses

(9−x)CaO·xMgO·15Na₂O·60SiO₂·16CaF₂(x=0, 2, 4, 6, and 9) oxyfluoride glasses were prepared. Utilizing the Raman scattering technique together with ²⁹Si and ¹⁹F MAS NMR, the effect of alkaline metal oxides on the Q species of glass was characterized. Raman results show that as magnesia is added at the expense of calcium oxide, the disproportional reaction Q³→Q⁴+Q² (Qⁿ is a SiO₄ tetrahedron with n bridging oxygens) prompted due to the high ionic field strength of magnesia, magnesium oxide entered into the silicate network as tetrahedral MgO₄, and removed other modifying ions for charge compensation. This reaction was confirmed by ²⁹Si MAS NMR. ¹⁹F MAS NMR results show that fluorine exists in the form of mixed calcium sodium fluoride species in all glasses and no Si–F bonds were formed. As CaO is gradually replaced by MgO (x=6, 9), a proportion of the magnesium ions combines with fluorine to form the MgF⁺ species. Meanwhile, some part of Na⁺ ions complex F⁻ in the form of F–Na(6).     

Effects of charge storage dielectric thickness on hybrid gadolinium oxide nanocrystal and charge trapping nonvolatile memory

The characteristics of hybrid gadolinium oxide nanocrystal (Gd₂O₃-NC) and gadolinium oxide charge trapping (Gd₂O₃-CT) memories were investigated with different Gd₂O₃ film thickness. By performing the rapid thermal annealing on Gd₂O₃ films with different thickness, the Gd₂O₃-NCs with the diameter of 6–9 nm for charge storage, surrounded by the amorphous Gd₂O₃ (α-Gd₂O₃) layer, were formed. The α-Gd₂O₃ layer was considered to be the charge trapping layer, resulting in the large memory window of Gd₂O₃-NC/CT memories with thick Gd₂O₃ film. The charge trapping energy level of the Gd₂O₃-NCs and α-Gd₂O₃ layer was extracted to be 0.16 and 0.45 eV respectively by using the temperature-dependent retention measurement. Further, after a 10⁶ program/erase cycling operation, the memory with thin Gd₂O₃ film can be predicted to sustain a 94% memory window of the first cycling one while the memory with thick Gd₂O₃ film suffered from a 30% charge loss because of the traps within the α-Gd₂O₃ layer. The Gd₂O₃ film thickness of 10 nm was optimized to exhibit superior performances of the Gd₂O₃-NC/CT memory, which can be applied into the nonvolatile memory.     

Raman scattering study of IrxRu1−xO2 mixed metal oxide nanowires (0 ≤ x ≤ 1)

Recent interests in mixed metal oxide nanostructured materials especially Ir_xRu_1−xO₂ compounds have been mainly driven by the technological application as electrocatalyst and electrode materials. We present room temperature Raman scattering results of single crystalline Ir_xRu_1−xO₂ (0 ≤ x ≤ 1) nanowires grown by atmospheric pressure chemical vapor deposition. We observed that the E_g, the A_1g, and the B_2g phonon modes of a single Ir_xRu_1−xO₂ nanowire are blue-shifted linearly with respect to the Ir contents from which we could get stoichiometry information. We also observed that the asymmetric lineshape and the broadening of the full width at half maximum of the E_g mode that involves the out-of-plane oxygen vibration. The unusual asymmetric broadening of the E_g phonon can be explained by the activation of the non-zone-center phonons due to substitutional disorder present in the system. We also found that there is a mixed mode of the A_1g and the B_2g phonons due to the substitutional disorder, in the range of 630–750 cm⁻¹.     

Effect of Eu3+ concentration on microstructure and photoluminescence of Sr2SiO4:Eu3+ phosphors prepared by microwave assisted sintering

In this paper, effect of Eu³⁺ doping concentrations on microstructure and photoluminescence of Sr₂SiO₄ phosphors was investigated. The Sr_2?xSiO₄:xEu³⁺ phosphors with x=0.05, 0.1, 0.2, 0.3 were synthesized by microwave assisted sintering at 1200 °C for 60 min in air. X-ray powder diffraction analysis confirmed the formation of pure Sr₂SiO₄ phase without second phase or phases of starting materials irrespective of the adding amount of Eu³⁺. From scanning electron microscopy image, it is found that with more Eu³⁺ ions introduced to Sr₂SiO₄, the shape of the particles is not much different from each other, but the particle size decreases significantly from 1 to 2 μm (when x=0.05) to less than 500 nm (when x=0.3). The emission spectrum was located obviously at 617 nm as the excitation spectrum at λ_ex=395 nm, and it had best emission intensity when x=0.1.     

Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

C–V characteristics and leakage currents of metal-insulator-silicon structures containing insulating film composed of thermally grown Ta₂O₅ and ultrathin SiO_xN_y layer grown in N₂O plasma were studied. Leakage in the structures is explained by tunneling in SiO_xN_y layer and Poole–Frenkel internal field assisted emission in Ta₂O₅. Theoretical calculations were made by known theoretical expression, while using fitted values of the thickness of SiO_xN_y, defect related constants for Ta₂O₅, and compensation degree r=1 for Ta₂O₅. For positive gate biases, tunneling of electrons from the silicon conduction band through SiO₂ is considered, while for gates negatively biased, tunneling of holes from the silicon valence band. In the early stage of nitridation barriers for injection decreases rapidly, then much slower. The thickness of the SiO_xN_y layer increases slowly with the nitridation time, as a result of the created barrier against diffusion of silicon atoms created by nitrogen incorporated at the interface between the silicon and oxide SiO_xN_y layer. PACS 73.40.Qv; 73.50.-h; 73.61.-r An erratum to this article can be found at .     

Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

The kinetics of electron and hole accumulation in metal-oxide-nitride-oxide-semiconductor structures is studied. Experimental data are compared with a theoretical model that takes into account tunnel injection, electron and hole capture by traps in amorphous silicon nitride SiN_x, and trap ionization. Agreement between experimental and calculated data is obtained for the bandgap width E _g = 8.0 eV of amorphous SiO₂, which corresponds to the barrier for holes Φ_h = 3.8 eV at the Si/SiO₂ interface. The tunneling effective masses for holes in SiO₂ and SiN_x are estimated at m _h ^* ≈ (0.4–0.5)m ₀. The parameters of electron and hole traps in SiN_x are determined within the phonon-coupled trap model: the optical energy W _opt = 2.6 eV and the thermal energy W _T = 1.3 eV.     

Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers

The impact of hydrogen desorption on the electrical properties of TiO_x on crystalline silicon (c-Si) with SiO_y interlayers is studied for the development of high-performance TiO_x carrier-selective contacts. Compared with the TiO_x/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm² are obtained by using SiO_y interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiO_x interlayers is lower than that of heterocontacts without a SiO_y interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiO_x/c-Si and TiO_x/SC2-SiO_y/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiO_x/SC2-SiO_y/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.     

Silicon nitride/silicon oxide interlayers for solar cell passivating contacts based on PECVD amorphous silicon

This Letter demonstrates improved passivating contacts for silicon solar cells consisting of doped silicon films together with tunnelling dielectric layers. An improvement is demonstrated by replacing the commonly used silicon oxide interfacial layer with a silicon nitride/silicon oxide double interfacial layer. The paper describes the optimization of such contacts, including doping of a PECVD intrinsic a‐Si:H film by means of a thermal POCl₃ diffusion process and an exploration of the effect of the refractive index of the SiN_x. The n⁺ silicon passivating contact with SiN_x /SiO_x double layer achieves a better result than a single SiN_x or SiO_x layer, giving a recombination current parameter of ～7 fA/cm² and a contact resistivity of ～0.005 Ω cm², respectively. These self‐passivating electron‐selective contacts open the way to high efficiency silicon solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Manipulating Ge quantum dots on ultrathin SixGe1−x oxide films using scanning tunneling microscope tips

Germanium quantum dots (QDs) were extracted from ultrathin Si_xGe_1−x oxide films using scanning tunneling microscope (STM) tips. The extraction was most efficiently performed at a positive sample bias voltage of +5.0 V. The tunneling current dependence of the extraction efficiency was explained by the electric field evaporation transfer mechanism for positive Ge ions from QDs to STM tips. Ge QDs (∼7 nm) were formed and isolated spatially by extracting the surrounding Ge QDs with an ultrahigh density of >10¹² cm⁻². Scanning tunneling spectroscopy of the spatially-isolated QDs revealed that QDs with an ultrahigh density are electrically-isolated from the adjacent dots.