Correlation of structure and spin–phonon coupling in (La,Nd) doped BiFeO3 films

We studied the effect of structural change on the spin–phonon coupling in doped BiFeO₃ (BFO) films (Bi_0.8La_0.1Nd_0.1FeO₃) grown on SrTiO₃ (001) substrate. The temperature‐dependent Raman studies show phonon anomalies in the vicinity of magnetic ordering temperature T_N owing to the spin–phonon coupling. Doped films exhibit strong anomalies in the line widths of Raman bands around T_N revealing the presence of strong spin–lattice coupling. The modification in structure as a result of A‐site doping in BFO films plays an important role in controlling the nature of spin–phonon coupling. Copyright © 2014 John Wiley & Sons, Ltd.     

Interplay of spin–orbit coupling and superconducting correlations in germanium telluride thin films

There is much current interest in combining superconductivity and spin–orbit coupling in order to induce the topological superconductor phase and associated Majorana‐like quasiparticles which hold great promise towards fault‐tolerant quantum computing. Experimentally these effects have been combined by the proximity‐coupling of super‐conducting leads and high spin–orbit materials such as InSb and InAs, or by controlled Cu‐doping of topological insu‐lators such as Bi₂Se₃. However, for practical purposes, a single‐phase material which intrinsically displays both these effects is highly desirable. Here we demonstrate coexisting superconducting correlations and spin–orbit coupling in molecular‐beam‐epitaxy‐grown thin films of GeTe. The former is evidenced by a precipitous low‐temperature drop in the electrical resistivity which is quelled by a magnetic field, and the latter manifests as a weak antilocalisation (WAL) cusp in the magnetotransport. Our studies reveal several other intriguing features such as the presence of two‐dimensional rather than bulk transport channels below 2 K, possible signatures of topological superconductivity, and unexpected hysteresis in the magnetotransport. Our work demonstrates GeTe to be a potential host of topological SC and Majorana‐like excitations, and to be a versatile platform to develop quantum information device architectures. (© 2016 The Authors. Phys. Status Solidi RRL published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetoelectric properties of Mn-substituted BiFeO3 thin films with a TiO2 barrier

Multiferroic thin films with the general formula TiO₂/BiFe_1−xMn_xO₃ (x=0.00, 0.05, 0.10 and 0.15) (TiO₂/BFMO) were synthesized on Au/Ti/SiO₂/Si substrates using a chemical solution deposition (CSD) method assisted with magnetron sputtering. X-ray diffraction analysis shows the thin films contained perovskite structures with random orientations. Compared with BFMO films, the leakage current density of the TiO₂/BFMO thin films was found to be lower by nearly two orders of magnitude, and the remnant polarizations were increased by nearly ten times. The enhanced ferroelectric properties may be attributed to the lower leakage current caused by the introduction of the TiO₂ layer. The J-E characteristics indicated that the main conduction mechanism for the TiO₂/BFMO thin film was trap-free Ohmic conduction over a wide range of electric fields (0-500 kV/cm). In addition, ferromagnetism was observed in the Mn doped BFO thin films at room temperature. The origin of ferromagnetism is related to the competition between distortion of structure and decrease of grain size and decreasing net magnetic moment in films due to Mn doping.     

Review of Spin–Orbit Coupled Semimetal SrIrO3 in Thin Film Form

Spin–orbit coupling, locking the momentum of an electron to its spin, has been shown essential for giving rise to many novel physical behaviors. SrIrO₃ is a typical metallic member of the strong spin–orbit coupling iridate family. Its orthorhombic phase has been confirmed as a paramagnetic semimetal resulted from the interplay among spin–orbit coupling, electron correlation, and crystal field, and was theoretically predicted to host versatile topological phases. This article reviews the current knowledge on the preparation and the tunable properties of orthorhombic SrIrO₃ films. Experiments have demonstrated that orthorhombic SrIrO₃ can be successfully synthesized as films under substrate lattice constraint without high pressure, and the films frequently display metal-insulator transition due to disorder and weak-antilocalization owing to spin-orbit coupling. The properties of orthorhombic SrIrO₃ film are sensitive to the rotation and tilting of the IrO₆ octahedral, and consequently can be significantly tuned through strain engineering. Simultaneously, thickness-dependent size effect is also remarkable in SrIrO₃ films. The accumulated research on SrIrO₃ films suggests an urgent demand for research on superlattices constructed with orthorhombic SrIrO₃, to better understand the mechanism of the electron structure evolution, and thus the relevant magnetic states and topological phases in orthorhombic SrIrO₃ and its family.     

Synthesis, microstructures, and magnetoelectric couplings of electrospun multiferroic nanofibers

Multiferroic materials with two or more types of ferroic orders have attracted a great deal of attention in the last decade for their magnetoelectric coupling, and new ideas and concepts have been explored recently to develop multiferroic materials at nano-scale. Motivated by theoretical analysis, we synthesized single-phase BiFeO₃ (BFO) nanofibers, Pb(Zr_0.52Ti_0.48)O₃-CoFe₂O₄ (PZT-CFO) and Pb(Zr_0.52Ti_0.48)O₃-NiFe₂O₄ (PZT-NFO) composite nanofibers, and CoFe₂O₄-Pb(Zr_0.52Ti_0.48)O₃ (CFO-PZT) core-shell nanofibers using sol-gel based electrospinning. These nanofibers typically have diameters in the range of a few hundred nanometers and grain size in the range of 10s nanometers, and exhibits both ferroelectric and ferromagnetic properties. Piezoresponse force microscopy (PFM) based techniques have also been developed to examine the magnetoelectric coupling of the nanofibers, which is estimated to be two orders of magnitude higher than that of thin films, consistent with our theoretical analysis. These nanofibers are promising for a variety of multiferroic applications.     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Martensitic transformation in as-grown and annealed near-stoichiometric epitaxial Ni2MnGa thin films

Magnetic shape memory nanostructures have a great potential in the field of the nanoactuators. The relationship between dimensionality, microstructure and magnetism characterizes the materials performance. Here, we study the martensitic transformation in supported and free-standing epitaxial Ni₄₇Mn₂₄Ga₂₉ films grown by sputtering on (0?0?1) MgO using a stoichiometric Ni₂MnGa target. The films have a Curie temperature of ~390 K and a martensitic transition temperature of ~120 K. Similar transition temperatures have been observed in films with thicknesses of 1, 3 and 4 μm. Thicker films (with longer deposition time) present a wider martensitic transformation range that can be associated with small gradients in their chemical concentration due to the high vapour pressure of Mn and Ga. The magnetic anisotropy of the films shows a strong change below the martensitic transformation temperature. No features associated with variant reorientation induced by magnetic field have been observed. Annealed films in the presence of a Ni₂MnGa bulk reference change their chemical composition to Ni₄₉Mn₂₆Ga₂₅. The change in the chemical composition increases the martensitic transformation temperature, being closer to the stoichiometric compound, and reduces the transformation hysteresis. In addition, sharper transformations are obtained, which indicate that chemical inhomogeneities and defects are removed. Our results indicate that the properties of Ni–Mn–Ga thin films grown by sputtering can be optimized (fixing the chemical concentration and removing crystalline defects) by the annealing process, which is promising for the development of micromagnetic shape memory devices.     

Thickness dependent supercapacitor behaviour of sol-gel spin coated nanostructured vanadium pentoxide thin films

Vanadium pentoxide thin films of various thicknesses have been prepared by sol-gel spin coating method on glass and conducting substrates. X-ray diffraction analysis reveals crystalline nature for the 6–12 layered films (170–310?nm). The crystalline films indicate a preferential orientation of the crystallites along the (200) plane. FTIR studies of the V₂O₅ xerogel show the presence of V–O–V and V=?O bond confirming the formation of V₂O_5. The scanning electron microscope images reveal formation of nanostructures in the 6–12 layered films. Optical absorption studies indicate a band gap of 2.2–2.5?eV. Pseudocapacitance behaviour of the V₂O₅ films was studied using cyclic voltammetric technique and impedance analysis. V₂O₅ films of thickness 202?nm (8 layers) exhibit a specific capacitance of 346?F/g at a scan rate of 5?mV/s.     

The role of nickel addition and annealing temperature on ion storage performance of nanostructured nickel ferrite thin films

The sol–gel spin-coated nickel ferrite (NF), NiFe₂O₄, thin films were synthesised and the effect of annealing temperature and compositional ratio on different properties of samples were investigated. Electrochemical performance of the films was measured in the presence of KOH and LiClO₄/PC electrolyte. Generally, addition of nickel increases the current density. The NF thin films with molar ratio of 0.5 and annealed at 400 °C have the highest charge density value and the highest capacitance in both electrolytes. Annealing temperature had significant effect on electrochemical properties of NF thin films and the diffusion coefficient enhanced by increasing the annealing temperature. X-ray diffraction patterns of prepared samples showed the rhombohedral structure, hematite phase (α-Fe₂O₃), of iron oxide sample and the presence of inverse spinel structure confirms the formation of NF. Field emission scanning electron microscopy images revealed that the morphology of films changes from larvae shape to granular structure by nickel incorporation and the grain size increased by raising the annealing temperature. The absorption edge of the hematite shift to higher wavelength by annealing and nickel incorporation and band gap narrowing has been occurred.     

Electrosynthesis and characterization of Fe doped CdSe thin films from ethylene glycol bath

The CdSe and Fe doped CdSe (Fe:CdSe) thin films have been electrodeposited potentiostatically onto the stainless steel and fluorine doped tin oxide (FTO) glass substrates, from ethylene glycol bath containing (CH₃COO)₂·Cd·2H₂O, SeO₂, and FeCl₃ at room temperature. The doping concentration of Fe is optimized by using (photo) electrochemical (PEC) characterization technique. The deposition mechanism and Fe incorporation are studied by cyclic voltammetry. The structural, surface morphological and optical properties of the deposited CdSe and Fe:CdSe thin films have been studied by X-ray diffraction, scanning electron microscopy (SEM) and optical absorption techniques respectively. The PEC study shows that Fe:CdSe thin films are more photosensitive than that of undoped CdSe thin films. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The complete surface morphology has been changed after doping. Optical absorption study shows the presence of direct transition and a considerable decrease in bandgap, E_g from 1.95 to 1.65 eV.     

Electrical conductivity dependence of thin metallic films of Au and Pd as a top electrode in capacitor applications

Electrical conductivity dependence of thin metallic films of Au and Pd over the different perovskites was investigated. It is found from electrical properties that crystallographic growth orientation of Au and Pd thin layers attained from X-ray diffraction results indicate the slop of current (I)-voltage (V) plots. Besides, surface morphology and topography was considered using Field Emission Scanning Electron Microscopy and Atomic Force Microscopy, respectively. Obtained results showed the Stranski-Krastanov growth of the Pd and Au. Indeed, diminishing of the root-mean-square roughness of Pd/BiMnO₃/SrTiO₃ following by Au deposition should be concerned due to growth of Au onto the crack-like parts of the substrate. These crack-like parts appeared due to parasitic phases of the Bi-Mn-O system mainly Mn₃O₄ (l 0 l) and Mn₃O₄ (0 0 4 l).The different response in the electrical properties of heterostructures suggests that electrical conductance of the Au and Pd thin metallic films have the crystallographic orientation dependence. Furthermore, polycrystallinity of the thin metallic films are desired in electrode applications due to increase the conductivity of the metallic layers.     

Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications

In order to study the effect of different buffer layers on the Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films, 10-nm thick (Pb_0.72La_0.28)Ti_0.93O₃ (PLT) and Pb(Zr_0.52Ti_0.48)O₃ buffer layers have been deposited on the Pt(1 1 1)/Ti/SiO₂/Si substrates by pulsed laser deposition, respectively. The top buffer layers were also deposited on PZT thin films with the same thickness of the seed layers in order to enhance the fatigue characteristics of PZT thin films. We compared the results of dielectric constant, hysteresis loops and fatigue resistance characteristics. It was found that the dielectric properties of PZT thin films with PLT buffer layers were improved by comparing with PZT thin films with PZT buffer layers. The polarization characteristics of PZT thin films with PLT buffer layers were observed to be superior to those of PZT thin films using PZT buffer layers. The remanent polarization of PZT thin films showed 36.3 μC/cm² and 2.6 μC/cm² each in the case of use PLT and PZT buffer layers. For the switching polarization endurance analysis, PZT thin films with PLT buffer layers showed more excellent result than that of PZT thin films with PZT buffer layers.     

Phase evolution and effect of pre-heating temperature on the characteristics of PZT thin films grown by using a triol sol--gel route

Lead zirconate titanate (PZT) films were fabricated on Pt(111)/Ti/SiO₂/Si(100) using the triol sol--gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties and ferroelectric properties of the PZT thin films was investigated. Randomly-oriented PZT thin films pre-heated at 400°C for 10?min and annealed at 600°C for 30?min showed well-defined ferroelectric hysteresis loops with a remanent polarization of 26.57?µC?cm^?2 and a coercive field of 115.42?kV?cm^?1. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free and homogeneous with fine grains about 15–20?nm in size.     

Raman scattering studies of hexagonal rare‐earth RMnO3 (R = Tb,Dy, Ho,Er) thin films

We have studied the rare‐earth (R) dependence of the phonon and magnon scattering in hexagonal RMnO₃ (R = Tb, Dy, Ho, Er) thin films using Raman scattering spectroscopy. We found, as the ionic radius of R decreases from Tb to Er, the phonons shift to higher energies. Our results indicate that both the lattice constants a and c of hexagonal RMnO₃ would decrease when the ionic radius of R decreases, and the lattice constant c would have a weaker R dependence. The magnons also shift to higher energies when the radius of the R ion decreases, and they show faster upshift than the phonons. In addition, the Néel temperature also shows a systematic increasing behavior when the radius of the R ion decreases. The dependence of the rare‐earth R on the magnons and the Néel temperature can be explained by the rapid increase of the spin‐exchange integral when the Mn–Mn distance decreases. Copyright © 2011 John Wiley & Sons, Ltd.     

Improvement of dielectric tunability and loss tangent of (Ba,Sr)TiO3 thin films with K doping

Ba_0.6Sr_0.4TiO₃ thin films doped with K were deposited on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method. The structure, surface morphology, and dielectric and tunable properties of Ba_0.6Sr_0.4TiO₃ thin films have been studied in detail. The K content in Ba_0.6Sr_0.4TiO₃ thin films has a strong influence on the material's properties including surface morphology, dielectric and tunable properties. It is found that the Curie temperature of K-doped Ba_0.6Sr_0.4TiO₃ films shifts to higher values compared with that of undoped Ba_0.6Sr_0.4TiO₃ thin films, which leads to a dielectric enhancement of K-doped Ba_0.6Sr_0.4TiO₃ films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.     

Fabrication and characterization of indium sulfide thin films deposited on SAMs modified substrates surfaces by chemical bath deposition

In an effort to explore the optoelectronic properties of nanostructured indium sulfide (In₂S₃) thin films for a wide range of applications, the In₂S₃ thin films were successfully deposited on the APTS layers (-NH₂-terminated) modified ITO glass substrates using the chemical bath deposition technique. The surface morphology, structure and composition of the resultant In₂S₃ thin films were characterized by FESEM, XRD, and XPS, respectively. Also, the correlations between the optical properties, photocurrent response and the thickness of thin films were established. According to the different deposition mechanisms on the varying SAMs terminational groups, the positive and negative micropatterned In₂S₃ thin films were successfully fabricated on modified Si substrates surface combining with the ultraviolet lithography process. This offers an attractive opportunity to fabricate patterned In₂S₃ thin films for controlling the spatial positioning of functional materials in microsystems.     

Structural characterization and magnetoresistance of manganates thin films and Fe-doped manganates thin films

Perovskites thin films with the composition La_0.6Ca_0.4MnO₃ doped with 20% Fe, were prepared by pulsed reactive crossed beam laser ablation, where a synchronized reaction gas pulse interacts with the ablation plume. The films were grown on various substrates and the highest colossal magnetoresistance ratio (CMR) was detected by Hall measurements for films grown on LaAlO₃ (1 0 0), which was selected as substrate for further investigations.Several growth parameters, such as substrate temperature and target to substrate distance were varied to analyze their influence on the film properties.The structure of the deposited thin films was characterized by X-ray diffraction and atomic force microscope, while Rutherford backscattering (RBS) was used to determine the film stoichiometry. The electrical properties were determined by Hall effect measurements in a magnetic field of 0.51 T.These measurements reveal that the amplitude of the CMR ratio depends strongly on the substrate and that the oxygen content influences the temperature where the transition from semiconductor to metal is observed.     

Voltage control of millimeter-wave ferromagnetic resonance in multiferroic heterostructures thin films

Multiferroic heterostructures thin films, SrBi₂Ta₂O₉/BaFe₁₂O₁₉ (SBT/BaM), were grown on Pt/TiO₂/SiO₂/Si substrates by using magnetron sputtering and Sol-gel ways. X-ray diffractometer (XRD) analysis showed that only SBT and BaM phases appeared in the multiferroic heterostructures. Magnetic hysteresis loops revealed that the saturated magnetization was 3.7 kG and the M-H characteristics of SBT/BaM were not influenced by the presence of the SBT layer. Ferromagnetic resonance (FMR) measurement showed the lowest FMR linewidth of 205 Oe at 50 GHz. Additionally, when direct-current electric field was applied to SBT layer, as a result of which mechanical deformation of the ferromagnetic layer occurred that leads to a frequency shift in ferromagnetic resonance and the magnetoelectric coupling effect (α) is 1.8 MHz*cm/kV. Our findings indicate that these SBT/BaM thin films have a significant potential for the usage in millimeter wave tunable devices.     

A study on the microwave responses of YBCO and TBCCO thin films by coplanar resonator technique

YBa₂Cu₃O₇(YBCO) thin films have been prepared by thermal coevaporation on LaAlO₃(LAO) substrates, and Tl₂Ba₂CaCu₂O₈(TBCCO) thin films are synthesized by magnetron sputtering method on LAO substrates. The transition temperature T_c is 90\,K for YBCO/LAO and 104\,K for TBCCO/LAO. Microwave responses of the films are studied systematically by coplanar resonator technique. Energy gaps of the films obtained are {\it\Delta}₀=1.04k_BT_c for YBCO films and ${\it\Delta}_0=0.84k_BT_c for TBCCO films by analysing the temperature dependence of resonant frequencies of coplanar resonator. Penetration depth at 0\,K \lambda ₀=198nm for YBCO films and \lambda₀ =200nm for TBCCO films could also be obtained by using the weak coupling theory and two fluid theory. Results of penetration depth and energy gap confirm the weak coupling properties of the films. In addition, microwave surface resistances R_s of YBCO/LAO and TBCCO/LAO are also investigated by analysing the quality factor and insert loss of the coplanar resonator. Surface resistance of TBCCO/LAO is less than that of YBCO/LAO, so that TBCCO/LAO films may have more potential applications.     

Miniature plasma focus as a novel device for synthesis of soft magnetic FeCo thin films

The Letter reports the first ever application of low energy miniature plasma focus device as a deposition facility for nanostructured thin films. We demonstrate successful utilization of a 120 J fast miniature plasma focus device as a novel facility for the deposition of magnetically soft FeCo thin films. Different gas types and the substrate materials were used to investigate their effects on magnetic properties of the films. The FeCo films deposited on Si₍₁₀₀₎ with hydrogen as the filling gas were found to have an average grain size of 10.8±1.2 nm with narrow size distribution and soft magnetic properties with coercivity of about 6.3 Oe. The experimental coercivity value matched reasonably well with the theoretical calculation done using ripple theory.