高效率和色稳定性的双超薄发光层的黄光有机电致发光器件

主要对rubrene黄光发光材料制作0.1nm厚度的超薄发光层的有机电致发光器件作了研究,并配合BCP空穴阻挡层探讨了对器件效率和色坐标稳定性的影响。双超薄rubrene发光层配合BCP空穴阻挡层的有机电致发光器件的性能得到了很好的改善,外加电压6V时,器件电流效率为6.35cd.A-1;外加电压10V时,器件发光亮度达到了7068cd.m-2。另外,在较大的外加电压驱动范围内,器件的色坐标一直保持在(0.49,0.49)。增加的发光效率和良好的色坐标稳定性主要是取决于空穴与电子的注入与输运平衡以及激子在超薄rubrene发光层中稳定性的复合平衡。     

Improved performance of organic light-emitting diodes with dual electron transporting layers

In this study the performance of organic light-emitting diodes(OLEDs) are enhanced significantly,which is based on dual electron transporting layers(Bphen/CuPc).By adjusting the thicknesses of Bphen and CuPc,the maximal luminescence,the maximal current efficiency,and the maximal power efficiency of the device reach 17570 cd/m2 at 11 V,and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm2 respectively,which are enhanced approximately by 33.4%,39.3%,and 68.9%,respectively,compared with those of the device using Bphen only for an electron transporting layer.These results may provide some valuable references for improving the electron injection and the transportation of OLED.     

Highly efficient blue organic light-emitting diodes using various hole and electron confinement layers

In this Letter, blue phosphorescence organic light-emitting diodes(PHOLEDs) employ structures for electron and/or hole confinement; 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene is used as a hole confinement layer and tris-(phenylpyrazole)iridium [IreppzT3] is utilized for an electron confinement layer(ECL). The electrical and optical properties of the fabricated blue PHOLEDs with various carrier-confinement structures are analyzed.Structures with a large energy offset between the carrier confinement and emitting layers enhance the charge-carrier balance in the emitting region, resulting from the effective carrier confinement. The maximum external quantum efficiency of the blue PHOLEDs with the double-ECLs is 24.02% at 1500 cd∕m2and its luminous efficiency is 43.76 cd∕A, which is 70.47% improved compared to the device without a carrier-confinement layer.     

Highly efficient and low turn-on voltage quantum-dot light-emitting diodes using a ZnMgO/ZnO double electron transport layer

A ZnMgO and ZnO double-layered structure was prepared to create a stepwise interfacial electronic structure to improve the electron-injection and electron-transport behaviors in quantum-dot light-emitting diodes (QLEDs). The current density of the electron-only device (EOD) with ZnMgO/ZnO was higher than that of the EOD with only ZnMgO. The detailed QLED interfacial electronic structure was measured using X-ray and ultraviolet photoelectron spectroscopy. A stepwise interfacial electronic structure for electron injection and electron transport was observed connecting the aluminum cathode to the ZnMgO conduction band minimum (CBM) via the ZnO CBM. The QLEDs with the ZnMgO/ZnO double electron transport layer showed an improved performance, with a maximum luminance and current efficiency of 90,892 cd m⁻² and 19.2 cd A⁻¹, respectively. Moreover, the turn-on voltage of the device was significantly reduced to 2.6 V due to the stepwise interfacial electronic structure between the aluminum cathode and ZnMgO CBM. This research provides a useful method for developing highly efficient and low turn-on voltage QLEDs using a ZnMgO/ZnO double ETL for next-generation display.     

Improved efficiencies of hybrid organic light‐emitting diodes using efficient electron injection layer

Hybrid organic‐inorganic light‐emitting diodes were developed with pristine ZnO (2.0 wt%) and Cu‐doped ZnO (2.0 wt%) as electron injection layer and iridium(III)‐bis‐2‐(4‐fluorophenyl)‐1‐(naphthalen‐1‐yl)‐1H‐phenanthro[9,10‐d]imidazole (acetylacetonate) [Ir(fpnpi)₂ (acac)] as green emissive layer (521 nm). The pristine ZnO and Cu‐doped ZnO are deposited at indium tin oxide cathode and emissive layer interface. The electroluminescent performances increased by electron injection layer–Cu‐doped ZnO compared with ZnO‐based device because Cu‐doped ZnO injects electron efficiently result in balanced h⁺ ? e^? recombination in emissive layer than ZnO‐based device. The Cu‐doped ZnO (2.0 %) device shows luminance (L) of 10 982 cd/m² at 23.0 V (ZnO, 1450 cd/m² at 23.0 V).     

Enhanced luminance of organic light-emitting diodes with metal nanoparticle electron injection layer

Improvement of the performance of organic light-emitting diodes (OLEDs) was achieved by implementing Magnesium-Nickel nanoparticles at the cathode–organic interface using pulsed laser deposition technique. The small geometry of Mg-Ni nanoparticles acts to enhance the localized electric field around them, thus increasing electron injection through tunneling, from the cathode to the organic layer. Improved current and luminance characteristics were demonstrated for both small molecule and polymer-based OLEDs when the nanoparticle layer was incorporated.     

Enhanced luminance of white organic light-emitting diode with yellow nanophosphors-embedded blue polymer emitting layer

White organic light-emitting device was achieved through an incorporation of yellow YAG nanophosphors into blue polyfluorene emitting layer: electrode/YAG@polyfluorene/hole-transport/injection layers/ITO glass. The brightness of the proposed device (230 cd/m² at 30 V) was enhanced by a factor of about two in comparison with that of phosphor-free reference device. It is attributed to the increased local electric field caused by bumps of nanophophors on the emitting layer. With increase of voltage, the blue-green emission decreased whereas the yellow emission increased. It is due to the effective energy transfer from the blue-green to the yellow bands.     

基于ZnS增透膜的顶发射白光有机发光二极管

顶发射白光有机发光二极管(TEWOLED)在白光照明和全彩显示中有着良好的应用前景, 克服顶发射器件中的微腔效应是制备光电性能良好的TEWOLED的前提. 使用具有高折射率的ZnS作为增透膜改善金属阴极在蓝光波段的透射率,降低其反射性, 从而有效抑制了微腔的影响.同时利用转移矩阵理论和宽角干涉方法分别对阴极结构和 蓝光发光层位置进行了优化,最终获得了高效、色纯度良好、色度随视角变化小的TEWOLED. 最高亮度和效率分别达到9213 cd/m²和3 cd/A,色坐标位于白光区且接近白光等能点, 同时具有良好的视角稳定性,在0°---60°范围内色坐标仅变化(0.02, 0).     

High efficiency blue phosphorescent organic light-emitting diodes without electron transport layer

High efficiency blue phosphorescent organic light-emitting diodes were fabricated without an electron transport layer using a spirobifluorene based blue triplet host material. The simple blue PHOLEDs without the electron transport layer showed a high external quantum efficiency and current efficiency of 16.1% and 30.2 cd/A, respectively. The high device performances of the electron transport layer free blue PHOLEDs were comparable to those of blue PHOLEDs with the electron transport layer.     

NPB:CBP复合空穴传输层对黄色有机电致发光器件的影响

采用N, N'-diphenyl-N, N'-bis(1-naphthyl-pheny1)-1, 1'-biphenyl-4, 4'-diamine (NPB):4, 4'-N, N'-dicarbazole-biphenyl (CBP) 掺杂体系为复合空穴传输层,制备了结构为indium-tin oxide (ITO)/NPB:CBP/CBP:bis iridium (acetylacetonate) /2, 9-dimethyl-4, 7-diphenyl-p 关键词： 有机电致发光器件(OLEDs) 复合空穴传输层 NPB:CBP 器件性能     

Efficient organic light-emitting diodes with zinc acetate as an effective electron injection layer

We report on the fabrication of organic light-emitting diodes (OLEDs) using a zinc acetate ((CH₃COO)₂Zn) layer as the cathode buffer layer. The results show that the device containing a (CH₃COO)₂Zn interlayer shows improved luminance and efficiency due to the Zn–N bond formation resulting in the occurrence of Alq₃ anion and also due to the band bending at the Alq₃/Al interface, which is beneficial to electron injection by lowering electron injection barrier. And the devices with structured cathodes (CH₃COO)₂Zn/LiF/Al and LiF/(CH₃COO)₂Zn/Al have a higher luminance and efficiency than the LiF/Al cathode-based device.     

High-efficiency organic light-emitting diodes based on ultrathin blue phosphorescent modification layer

Yellow organic light-emitting devices(YOLEDs) with a novel structure of ITO/MoO_3(5 nm)/NPB(40 nm)/TCTA(15 nm)/CBP:(tbt)_2Ir(acac)(x%)(25 nm)/FIrpic(y nm)/TPBi(35 nm)/Mg:Ag are fabricated. The ultrathin blue phosphorescent bis[(4,6-difluorophenyl)-pyridi-nato-N,C2■](picolinate) iridium(Ⅲ)(FIrpic) layer is regarded as a highperformance modification layer. By adjusting the thickness of FIrpic and the concentration of (tbt)_2Ir(acac), a YOLED achieves a high luminance of 41618 cd/m~2, power efficiency of 49.7 lm/W, current efficiency of 67.3 cd/A, external quantum efficiency(EQE) of 18%, and a low efficiency roll-off at high luminance. The results show that phosphorescent material of FIrpic plays a significant role in improving YOLED performance. The ultrathin FIrpic modification layer blocks excitons in EML. In the meantime, the high triplet energy of FIrpic(2.75 eV) alleviates the exciton energy transport from EML to FIrpic.     

Investigation of bipolar matrix based mixed host in highly efficient green delayed fluorescence organic light-emitting diodes

The mixed cohosts of electron transport host (E-host): 4,40-bis(carbazol-9-yl)biphenyl (CBP) have been comparatively investigated for an efficient green fluorescent organic light emitting diode (OLED) doped with a thermally activated delayed fluorescence (TADF) emitter (4s,6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN). The E-host:CBP systems significantly enhance the electroluminescent (EL) properties. After doping E-host, the lifetime of the emissive layer decreases and the surface becomes smoother, together with the impedance decreases for one magnitude and the hole-injection depresses. The charge balance and improved interface both contribute to the EL performance enhancement. Here we develop a universal mixed host system suitable to most of emitters.     

Highly efficient greenish blue-emitting organic diodes based on pyrene derivatives

We report the synthesis of pyrene derivatives as the light emissive layer for highly efficient organic electroluminescence (EL) diodes. Multilayer devices were fabricated with pyrene derivatives (ITO/NPB (50 nm)/blue material (30 nm)/BCP (10 nm)/Alq₃ (30 nm)/LiF (1 nm)/Al). By using 1,1′-dipyrene (DP) and 1,4-dipyrenyl benzene (DPB), the devices produced the blue EL emissions with 1931 Commission International de L’Eclairage coordinates of (x=0.21, y=0.35) and (x=0.19, y=0.25), respectively. The device with DPB shows a maximum brightness of 42,445 cd/m² at 400 mA/cm² and the luminance efficiency of 8.57 cd/A and 5.18 lm/W at 20 mA/cm².     

Highly efficient all phosphorescent white organic light-emitting diodes for solid state lighting applications

We report highly efficient all phosphorescent white organic light-emitting diodes (OLEDs) with an exciton-confinement structure. By stacking two emissive layers (EMLs) with different charge transporting properties, effective charges as well as exciton confinements were achieved. Accordingly, efficient blue OLEDs with a peak external quantum efficiency (EQE) over 22% and power efficacy (PE) over 50 lm/W were developed by using iridium(III) bis(4,6-(difluorophenyl) pyridinato-N,C2′)picolinate (FIrpic) as an electro-phosphorescent dopant. When the optimized orange and red EMLs were sandwiched between the stacked two blue EMLs, white OLEDs with an EQE and PE of 24.3% and 45.9 lm/W at a luminance of 1000 cd/m² were obtained without the use of any out-coupling techniques. In addition, these white OLEDs exhibit a color rendering index (CRI) value of 84 with high efficacy.     

Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes

Optical Review - We present the enhancement of ultraviolet (UV) light-emitting diodes (LEDs) using numerical analysis. We have employed a compositionally graded quaternary (AlInGaN) electron...     

Highly efficient polymer phosphorescent light-emitting devices based on a new polyfluorene derivative as host

Several highly efficient iridium-complex polymer light-emitting devices (PLEDs) are fabricated,with a newly synthesized blue conjugated polymer,poly[(9,9-bis(4-(2-ethylhexyloxy)phenyl)-fluorene)-co-(3,7-dibenziothiene-S,S-dioxide15)] (PPF-3,7SO15),chosen as host.High luminous efficiencies of 7.4 cd·A 1 and 27.4 cd·A 1 are achieved in red and green PLEDs,respectively,by optimizing the doping concentrations of red phosphorescent dye iridium bis(1-phenylisoquinoline) (acetylacetonate) (Ir(piq)) and green phosphorescent dye iridium tris(2-(4-tolyl)pyridinato-N,C 2) (Ir(mppy) 3).Furthermore,highly efficient white PLEDs (WPLEDs) with the Commission Internationale de l’Eclairage (CIE) coordinates of (0.35,0.38) are successfully produced by carefully controlling the doping concentration of the irid-ium complex.The obtained WPLEDs show maximal efficiencies of 14.4 cd·A 1 and 10.1 lm·W 1,which are comparable to those of incandescent bulbs.Moreover,the electroluminescent spectrum of the white device with an initial luminance of about 1000 cd·m 2 is stable,subject to constant applied current stress,indicating that good device stability can be obtained in this system.     

Efficient blue phosphorescent organic light emitting diodes with host engineering

We demonstrate as much as possible blue color and high efficiency phosphorescent organic light-emitting diodes (PHOLEDs) by using well-known iridium(III)bis[(3,5-difluoro-4-cyanophenyl)-pyridinato-N,C′]picolinate (FCNIrpic) dopant and previously reported good host materials. For the control of blue color and efficiency, various host materials, 1,3-bis(carbazole-9-yl)benzene (mCP), 9-(3-(9H-carbazole-9-yl)phenyl)-3-(dibromophenylphosphoryl)-9H-carbazole (mCPPO1), and 2,8-di(9H-carbazol-9-yl)dibenzo[b,d]furan (DFCz), bis(4-(N-carbazole)phenyl)dimethylsilane (2MCBP) are selected and investigated their performances. A maximum external quantum efficiency (EQE) of 23.9% and power efficiency of 30.2 lm/W are achieved from 2MCBP device with Commision Internationale de L'Eclairage color coordinates (CIE_x,y) of (0.14, 0.21). The deepest color with color coordinate of (0.14, 0.19) is obtained for the mCP device.     

High-efficiency organic light-emitting diodes (OLEDs) with a mixed layer structure

Improved performance of organic light-emitting diodes (OLEDs) as obtained by a mixed layer was investigated. The OLEDs with a mixed layer which were composed of N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1,1′-biphenyl-4,4′-diamine (NPB), tris-(8-hydroxyquinolato) aluminum (Alq₃) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) showed the highest brightness and efficiency, which reached 19048 cd/m² at 17 V and 4.3 cd/A at 10 mA/cm², respectively. The turn-on voltage of the device is 2.6 V. Its Commission Internationale del’Eclairage (CIE) coordinate is (0.497, 0.456) at 17 V, and the CIE coordinates of the device are largely insensitive to the driving voltages, which depicts stabilized yellow color.     

Improved performances in top-emitting organic light-emitting diodes based on a semiconductor zinc oxide buffer layer

Electroluminescence performances are improved by inserting a semiconductor zinc oxide (ZnO) buffer layer into the emissive tris-(8-hydroxyquinoline)aluminum (Alq₃) layer and the semitransparent Al/Ag cathode in top-emitting organic light-emitting diodes (TEOLEDs) with structures of Si/SiO₂/Ag/Ag₂O/4,4′, 4″-tris(3- methylphenylphenylamino)triphenylamine/ 4,4′-bis[N-(1-naphthyl-1-)-N-phenyl- amino]-biphenyl/Alq₃/ZnO/Al/Ag. The thermal deposition of ZnO layer onto Alq₃ results in Alq₃ anion formation, which is beneficial to electron injection by generating some new energy levels in the forbidden band of Alq₃. In addition, a large hole-injection barrier of 2 eV at the interface of Alq₃/ZnO effectively blocks hole injection into Al/Ag cathode, leading to more carrier recombination in the emissive region.