Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics

Recently, a number of semiconductor devices have been widely researched in order to make breakthroughs from the short-channel effects (SCEs) and high standby power dissipation of the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, a design optimization for the silicon nanowire tunneling field-effect transistor (SNW TFET) based on PNPN multi-junction structure and its radio frequency (RF) performances are presented by using technology computer-aided design (TCAD) simulations. The design optimization was carried out in terms of primary direct-current (DC) parameters such as on-current (I_on), off-current (I_off), current ratio (I_on/I_off), and subthreshold swing (SS). Based on the parameters from optimized DC characteristics, basic radio frequency (RF) performances such as cut-off frequency (f_T) and maximum oscillation frequency (f_max) were analyzed. The simulated device had a channel length of 60 nm and a SNW radius of 10 nm. The design variable was width of the n-doped layer. For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and I_on of 35 μA/μm were obtained. For this device, f_T and f_max were 80 GHz and 800 GHz, respectively.     

Symmetric tunnel field-effect transistor (S-TFET)

A novel heterojunction symmetric tunnel field-effect transistor (S-TFET) has been proposed and investigated, for the first time, in order to address the inborn technical challenges of the conventional p-i-n TFET (i.e., asymmetric TFET). With a band-to-band tunneling process between the germanium source/drain region and the silicon channel region, the theoretical limit of the subthreshold slope (SS) can be overcome (i.e., SS ∼ 45 mV/decade). The bidirectional current flow in the S-TFET is implemented with a p-n-p structure. And better performance in the S-TFET is achieved with a thin silicon-pad layer below the source/drain regions. The effects of source/drain/channel doping concentration and thickness on the performance of the device are investigated in order to create an S-TFET design guideline. In the future, the S-TFET will be one of the promising device structures for ultra-low-power applications, especially in integrated circuits that operate with a half-volt power supply voltage.     

Design and VNA-measurement of coplanar waveguide (CPW) on benzocyclobutene (BCB) at THz frequencies

The low permittivity and the low loss tangent of the benzocyclobutene polymer (BCB) offers to coplanar waveguides (CPW) a low dispersive propagation properties at THz frequency. These transmission lines have been designed, modeled with a three dimensional (3D) solver of Maxwell equations based on finite element method (FEM) from 20 to 1000 GHz at various characteristic impedances (Z_c). Their dispersion and losses (radiation, conduction and dielectric) have been investigated separately versus the waveguide size, the nature of the substrate (dielectric or semiconductor) to optimize the THz signal propagation. Monomode CPW on BCB numerically designed for various Z_c were realized and measured with vector network analyzer (VNA). S-parameters of CPW are de-embedded by optimization of the accesses’ model. A good agreement is found between experimental and numerical results with low attenuation constants of 2.7 dB/mm and 3.5 dB/mm at 400 GHz and 500 GHz, respectively.     

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

In this paper, we examined normally-OFF N-polar InN-channel Metal insulated semiconductor high-electron mobility transistors (MISHEMTs) device with a relaxed In_0.9Al_0.1N buffer layer. In addition, the enhancement-mode operation of the N-polar structure was investigated. The effect of scaling in N-polar MISHEMT, such as the dielectric and the channel thickness, alter the electrical behavior of the device. We have achieved a maximum drain current of 1.17 A/mm, threshold voltage (V_T) =0.728 V, transconductance (g_m) of 2.9 S mm⁻¹, high I_ON/I_OFF current ratio of 3.23×10³, lowest ON-state resistance (R_ON) of 0.41 Ω mm and an intrinsic delay time (τ) of 1.456 Fs along with high-frequency performance with f_t/ f_max of 90 GHz/109 GHz and 180 GHz/260 GHz for T_CH =0.5 nm at V_ds =0.5 V and 1.0 V. The numerically simulated results of highly confined GaN/InN/GaN/In_0.9Al_0.1N heterostructure MISHEMT exhibits outstanding potential as one of the possibility to replace presently used N-polar MISHEMTs for delivering high power density and frequency at RF/power amplifier applications.     

Electromagnetic wave absorption properties of ε-Fe3N/Y2O3 nanocomposites derived from Y2Fe17 intermetallic compound

The electromagnetic wave absorption properties of ε-Fe₃N/Y₂O₃ nanocomposites were characterized in a frequency range of 0.05–20.05 GHz. The imaginary part of relative permeability μ_r″ exhibited “twin peak” dispersion and μ_r″ value retained high over a 0.5–10 GHz range. The real part (ε_r′) and imaginary part (ε_r″) of relative permittivity almost kept a low constant in a region of 0.5–10 GHz, respectively. As a result, the resin composites with 51 vol% ε-Fe₃N/Y₂O₃ powders exhibited excellent electromagnetic wave absorption properties (RL<−20 dB) in a frequency range of 0.6–4.4 GHz, with a thickness of 3.3–19.3 mm. A minimum reflection loss of −55 dB was observed at 1.8 GHz with an absorber thickness of 7.05 mm.     

Enhancement microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by substituting La3+ with Sm3+

The microwave dielectric properties of La_1?xSm_x(Mg_0.5Sn_0.5)O₃ ceramics were examined with a view to their exploitation for mobile communication. The La_1?xSm_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. Apparent density of 6.59 g/cm³, dielectric constant (ε_r) of 19.9, quality factor (Q×f) of 70,200 GHz, and temperature coefficient of resonant frequency (τ_f) of ?77 ppm/°C were obtained for La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1500 °C for 4 h. The dielectric constant, and τ_f of La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃ ceramics were almost independent with the sintering temperature as the sintering temperature varied from 1450 to 1600 °C.     

Sub-THz continuous wave generation scheme using high-order harmonics modulated lightwave

We propose a sub-THz continuous wave (CW) generation scheme using a high-order harmonics modulated lightwave (HML) to reduce an electronic dependency of a conventional double sideband suppressed carrier (DSB-SC) scheme. The electronic dependency should be overcome to increase frequency tunability of the conventional DSB-SC scheme. This is because the frequency of a local oscillator (LO), f_LO, should be one-half frequency of the frequency of a desired sub-THz CW in the conventional DSB-SC scheme. The proposed scheme is formed by adding an optical feedback loop to the conventional DSB-SC scheme. In order to verify our proposed scheme, a 120 GHz CW is generated using the LO with f_LO = 20 GHz. Based on our experimental results, we have found that the frequency of the LO can be reduced by our proposed scheme up to one-sixth (20 GHz) of 120 GHz. The 120 GHz CW generated by the proposed scheme has 52 dB higher photomixed output power with narrow spectral linewidth than that of the 120 GHz CW generated by the conventional DSB-SC scheme using the LO with f_LO = 20 GHz. Consequently, our proposed scheme can be helpful to reduce the electronic dependency of the conventional DSB-SC scheme.     

Spermatozoon of the freshwater rotifer Brachionus calyciflorus (Rotifera,Monogononta): Advances in morphological and ultrastructural studies

The morphological and ultrastructural features of the spermatozoon in Brachionus calyciflorus are described using light, fluorescence and transmission electron microscopy (TEM). The mature spermatozoon, which appears to be thread-like, is composed of a slightly expanded anterior of cell body region and a flagellum region without acrosome. The cell body region and flagellum region are respectively 16–27 μm and 20–33 μm in length (n = 60). The spermatozoon is characterized by a mass of dense tubular materials, which occupy most of the cell. Some mitochondria are distributed around the nuclear region in the anterior of the cell body region, while in the posterior portion of cell body, the chromatin often contains a single lobated nucleus arranged at the center of cell. The flagellum contains the classic axoneme (9 × 2 + 2) and possesses lateral undulating membrane. Mature B. calyciflorus males have no germ cell stages earlier than the spermatids in the testis. TEM examination reveals rigid rods as well as predominant typical spermatozoon in the testis. Observations, based on successive photographs and videos, enabled a first-time recording of the unique inverted movement of the spermatozoon, which indicated that the movement of the spermatozoon is driven by the flagellum. Our study also provides further supplementary insights into the phylogenetic systematics of the Rotifera.     

Stabilization of high spin FCC Fe in (Fe/Pd)n multilayers

Polycrystalline (Fe/Pd)_n multilayers are grown onto sapphire substrates at room temperature in a UHV system. The number of periods n=40 and the thickness of Pd layers of t_Pd=4 nm are kept constant, whereas the thickness of the Fe layers is varied from 1.5 to 5 nm. Structural properties are studied by in situ reflection high energy diffraction (RHEED), scanning tunnelling microscopy (STM) and ex situ by X-ray diffraction at small angles and large angles. Analyzing the experimental data using the program SUPREX we obtain interplanar distances of d_Fe=2.03±0.01 Å for an Fe layer thickness larger than about 2.5 nm as expected for (1 1 0) planes of BCC Fe. For Fe layers with thicknesses less than about 2.5 nm the interplanar distance is d_Fe=2.1±0.01 Å, which is close to the distance between (1 1 1) planes of FCC Fe with a lattice parameter of a=3.64 Å. Magnetic susceptibility measurements at temperatures between 1.5 and 300 K for (Fe/Pd)_n multilayers with FCC Fe yield a magnetic moment per Fe atom of μ=2.7±0.1 μ_B, which is about 20% larger compared to μ=2.2 μ_B for BCC Fe. We show that the occurrence of the large magnetic moment originates from FCC Fe being in the high spin (HS) state rather than from polarization effects of Pd at Fe/Pd interfaces.     

Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (I_on), off-current (I_off), subthreshold swing (S), and I_on/I_off ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (f_T) and maximum oscillation frequency (f_max) on gate–drain capacitance (C_gd) with the underlapping were investigated as the gate length (L_gate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.     

Concentration and temperature dependences of infrared reflectivity spectra in glass ionic conductor AgI– and Ag2X–AgPO3 systems (X = S,Se, Te)

Infrared reflectivity spectra of glass ionic conductors (AgI)_y–(AgPO₃)_1−y and (Ag₂X)_y–(AgPO₃)_1−y (X = S, Se and Te) have been measured at several concentrations and temperatures. Of observed six intense bands, high or low frequency band results from PO₄ or Ag-PO₄ chain, and takes the shape similar to the reststrahlen band in crystal. Low frequency bands exhibit rapid frequency shifts at the structure transition temperatures of crystal Ag₂X (X = Se and Te). From these results, we suggest crystal like arrangements of the frame chain and doped element in addition to the intermediate range ordering, and estimate strengthened binding of PO₄ units and weakened inter-chain bindings. By proposing an empirical relationship between the ratio of short-range (f_S) to long-range (f_L) forces, f_S / f_L, and ionic activation energy, we clarify the importance of the combination of strengthened f_S and weakened f_L values for high ionic conduction and also for the expansion of inter-chain distance.     

Recombination luminescence of CsI(Tl) under electron pulse irradiation

The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (E_e = 250 keV, t_1/2 = 10 ns, j = 2 ÷ 160 mJ/cm²) has been studied. It has been discovered that the slow emission rise is due to hole V_k–Tl⁰ recombination luminescence at temperature from 100 to 160 K and electron–V_kA recombination, where electrons released from single Tl⁰ at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.     

Microfabrication of solenoid-type RF SMD chip inductors with an Al2O3 core

We investigated micron size, high-performance, and solenoid-type radio-frequency surface-mounted device (SMD) chip inductors with a low-loss Al₂O₃ core for a GHz drive microwave circuit application. Copper coils with a diameter of 27 μm were used and the chip inductors fabricated in this study are 0.86 × 0.46 × 0.45 mm³. The high-frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of the developed inductors were measured using a RF impedance/material analyzer (HP4291B with HP16193A test fixture). The developed inductors have a self-resonant frequency of 3.7–5.2 GHz and exhibit L of 15–34 nH. The inductors have Q of 38–49 over the frequency ranges of 900 MHz–1.7 GHz. The calculated data obtained from the equivalent circuit and the derived equation of Q described the high-frequency data of L, Q, and Z of the inductors developed quite well.     

Oxide ion conduction mechanism in RE9.33(SiO4)6O2 and Sr2RE8(SiO4)6O2 (RE = La,Nd) from neutron powder diffraction

The oxide ion conduction mechanism was clarified for high purity RE_9.33(SiO₄)₆O₂ and Sr₂RE₈(SiO₄)₆O₂ (RE = La and Nd) by Rietveld and maximum entropy method (MEM) analysis using neutron powder diffraction data collected at room temperature. All the compounds had an apatite-type structure in the space group P6₃/m. Neither site splitting nor interstitial sites of the oxide ion was observed. RE_9.33(SiO₄)₆O₂ had cation vacancies only at the 4f site. In Sr₂RE₈(SiO₄)₆O₂, the 4f sites were fully occupied by strontium and rare earths with a molar ratio of 1 : 1. Also, in RE_9.33(SiO₄)₆O₂, the oxide ion at the hexagonal channel site had a large displacement along the c-axis. This large displacement is induced by cooperative rotation of SiO₄ tetrahedra around rare earths at the 4f site through oxide ion polyhedra around another rare earth at the 6h site. The displacement, enhanced by a vacancy in the 4f site, is directly related to oxide ion conduction in RE_9.33(SiO₄)₆O₂.     

Microfluidic acoustic trapping force and stiffness measurement using viscous drag effect

It has recently been demonstrated that it was possible to individually trap 70 μm droplets flowing within a 500 μm wide microfluidic channel by a 24 MHz single element piezo-composite focused transducer. In order to further develop this non-invasive approach as a microfluidic particle manipulation tool of high precision, the trapping force needs to be calibrated to a known force, i.e., viscous drag force arising from the fluid flow in the channel. However, few calibration studies based on fluid viscosity have been carried out with focused acoustic beams for moving objects in microfluidic environments.In this paper, the acoustic trapping force (F_trapping) and the trap stiffness (or compliance k) are experimentally determined for a streaming droplet in a microfluidic channel. F_trapping is calibrated to viscous drag force produced from syringe pumps. Chebyshev-windowed chirp coded excitation sequences sweeping the frequency range from 18 MHz to 30 MHz is utilized to drive the transducer, enabling the beam transmission through the channel/fluid interface for interrogating the droplets inside the channel. The minimum force (F_min,trapping) required for initially immobilizing drifting droplets is determined as a function of pulse repetition frequency (PRF), duty factor (DTF), and input voltage amplitude (V_in) to the transducer. At PRF = 0.1 kHz and DTF = 30%, F_min,trapping is increased from 2.2 nN for V_in = 22 V_pp to 3.8 nN for V_in = 54 V_pp. With a fixed V_in = 54 V_pp and DTF = 30%, F_min,trapping can be varied from 3.8 nN at PRF = 0.1 kHz to 6.7 nN at PRF = 0.5 kHz. These findings indicate that both higher driving voltage and more frequent beam transmission yield stronger traps for holding droplets in motion.The stiffness k can be estimated through linear regression by measuring the trapping force (F_trapping) corresponding to the displacement (x) of a droplet from the trap center. By plotting F_trapping – x curves for certain values of V_in (22/38/54 V_pp) at DTF = 10% and PRF = 0.1 kHz, k is measured to be 0.09, 0.14, and 0.20 nN/μm, respectively. With variable PRF from 0.1 to 0.5 kHz at V_in = 54 V_pp, k is increased from 0.20 to 0.42 nN/μm. It is shown that a higher PRF leads to a more compliant trap formation (or a stronger F_trapping) for a given displacement x. Hence the results suggest that this acoustic trapping method has the potential as a noninvasive manipulation tool for individual moving targets in microfluidics by adjusting the transducer’s excitation parameters.     

The lightning striking distance—Revisited

First return stroke current waveforms measured by Berger [Methods and results of lightning records at Monte San Salvatore from 1963–1971 (in German), Bull. Schweiz. Elektrotech. ver. 63 (1972) 21403—21422] and Berger and Vogelsanger [Measurement and results of lightning records at Monte San Salvatore from 1955–1963 (in German), Bull. Schweiz. Elektrotech. ver. 56 (1965) 2–22] are used to estimate the charge stored in the lightning stepped leader channel. As opposed to previous charge estimates based on the entire current waveform, only the initial portion of measured current waveforms (100 μs in duration) was used in order to avoid the inclusion of any charges not involved in the effective neutralization of charges originally stored on the leader channel. The charge brought to ground by the return stroke within the first 100 μs, Q_f,100 μs (in C) is related to the first return stroke peak current, I_pf (in kA), as Q_f,100 μs=0.61 I_pf. From this equation the charge distribution of the stepped leader as a function of the corresponding peak return stroke current is estimated. This distribution (along with the assumed average electric field of 500 kV/m in the final gap) is used to estimate the lightning striking distance S (in meters) to a flat ground as a function of the prospective return stroke peak current I (in kA): S=1.9 I_pf^0.90. For the median first stroke peak current of 30 kA one obtains S=41 m, while the traditional equation, S=10 I_pf^0.65, gives S=91 m. In our view, the new equation for striking distance provides a more physically realistic basis for the electro-geometric approach widely used in estimating lightning incidence to power lines and other structures.     

Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer

The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (R_V), noise voltage (V_noise), noise equivalent power (NEP), and detectivity (D^*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 10³ V/W, 1.25 × 10⁻⁶ V Hz^1/2, 1.1 × 10⁻⁹ W and 1.9 × 10⁸ cm Hz^1/2 W⁻¹ at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τ_T was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices.     

First-principles study of small palladium clusters on NiAl(1 1 0) alloy surface

Theoretical calculations focused on the geometry, stability, electronic and magnetic properties of small palladium clusters Pd_n (n=1–5) adsorbed on the NiAl(1 1 0) alloy surface were carried out within the framework of density functional theory (DFT). In agreement with the experimental observations, both Ni-bridge and Al-bridge sites are preferential for the adsorption of single palladium atom, with an adsorption energy difference of 0.04 eV. Among the possible structures considered for Pd_n (n=1–5) clusters adsorbed on NiAl(1 1 0) surface, Pd atoms tend to form one-dimensional (1D) chain structure at low coverage (from Pd₁ to Pd₃) and two-dimensional (2D) structures are more stable than three-dimensional (3D) structures for Pd₄ and Pd₅. Furthermore, metal-substrate bonding prevails over metal–metal bonding for Pd cluster adsorbed on NiAl(1 1 0) surface. The density of states for Pd atoms of Pd/NiAl(1 1 0) system are strongly affected by their chemical environment. The magnetic feature emerged upon the adsorption of Pd clusters on NiAl(1 1 0) surface was due to the charge transfer between Pd atoms and the substrate. These findings may shade light on the understanding of the growth of Pd metal clusters on alloy surface and the construction of nanoscale devices.     

Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Ba_0.8Sr_0.2TiO₃ thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30–40 nm. A well saturated P–E hysteresis loop was observed with a remnant polarization (P_r) ≈ 4.8 μC/cm² and a coercive field ≈ 100 kV/cm at a frequency of 1 kHz. The P_r has been found to be decreased only 4.3% after passing 8.0 × 10⁸ cycles. The analysis of switching response with nucleation limited switching model reveals that characteristic switching time (t₀) variance is due to the random distribution of the local electric fields. The peak value of polarization current and t₀ exhibits exponential dependence on reciprocal of pulse amplitude.     

Dielectric properties and study of AC electrical conduction mechanisms by non-overlapping small polaron tunneling model in Bis(4-acetylanilinium) tetrachlorocuprate(II) compound

In the present work, the synthesis and characterization of the Bis(4-acetylanilinium) tetrachlorocuprate(II) compound are presented. The structure of this compound is analyzed by X-ray diffraction which confirms the formation of single phase and is in good agreement the literature. Indeed, the Thermo gravimetric Analysis (TGA) shows that the decomposition of the compound is observed in the range of 420–520 K. However, the differential thermal analysis (DTA) indicates the presence of a phase transition at T=363 k. Furthermore, the dielectric properties and AC conductivity were studied over a temperature range (338–413 K) and frequency range (200 Hz–5 MHz) using complex impedance spectroscopy. Dielectric measurements confirmed such thermal analyses by exhibiting the presence of an anomaly in the temperature range of 358–373 K. The complex impedance plots are analyzed by an electrical equivalent circuit consisting of resistance, constant phase element (CPE) and capacitance. The activation energy values of two distinct regions are obtained from log σT vs 1000/T plot and are found to be E=1.27 eV (T<363 K) and E=1.09 eV (363 K<T).The frequency dependence of ac conductivity, σ_ac, has been analyzed by Jonscher's universal power law σ(ω)=σ_dc+Aω^s. The value of s is to be temperature-dependent, which has a tendency to increase with temperature and the non-overlapping small polaron tunneling (NSPT) model is the most applicable conduction mechanism in the title compound.