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1.
Tin sulphide (SnS) thin films were deposited on glass substrate at different substrate temperature ( Ts = 325 °C, 350 °C and 375 °C) by pyrolytic decomposition using stannous chloride and thiourea as precursor solutions. Also, indium-doped SnS thin films were prepared by using InCl 3 as dopant source. The dopant concentration [In/Sn] was varied from 2 at% to 6 at%. The XRD analysis revealed that the films were polycrystalline in nature having orthorhombic crystal structure with a preferred grain orientation along (1 1 1) plane. Due to In doping, the orientation of the grains in the (1 1 1) plane was found to be deteriorated. Atomic force microscopy (AFM) measurements revealed that the surface roughness of the films decreased due to indium doping. The optical properties were investigated by measuring the transmittance characteristics which were used to find the optical band gap energy, refractive index and extinction coefficient. The energy band gap value was decreased from 1.60 to 1.43 eV with increasing In concentration. The photoluminescence (PL) measurements of thin films showed strong emission band centered at 760 nm. Using Hall Effect measurements electrical resistivity, carrier concentration and Hall mobility have been determined. 相似文献
2.
In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores. 相似文献
3.
Light trapping is a crucial factor to enhance the performance of thin film solar cells. For effective light trapping, we introduced Al nanoparticle array on the top and rear surface of thin film GaAs solar cells. The effect of both array on the optical absorption and current density of solar cells is investigated by using finite difference time domain (FDTD) method. The optimization process of top and rear array in solar cells is done systematically. The results indicate that by plasmonic action of arrays, the optical absorption is significantly enhanced and optimized structure yields a current density of 25.77 mA/cm 2. These enhancements are mainly attributed to surface plasmon effects induced by Al nanoparticles and the light grating properties of the arrays. 相似文献
4.
Cu 2SnS 3 is a promising absorber for green thin film solar cells because of its suitable optoelectrical properties and environment friendly components. In this study, CTS films were prepared by sulphurization of stacked metallic precursors deposited by thermal evaporation. Some physical properties were investigated by changing the amount of sulphur used in sulphurization stage. Highly crystalline tetragonal-CTS phase was obtained for all samples. However, Cu 3SnS 4 and CuS secondary phases were also determined at low amounts. Cu/Sn ratio approached to desired stoichiometry of CTS with increasing sulphur amount. Absorption spectra showed that there are two discrete absorption regions that are related to tetragonal-CTS and secondary phases. Thickness and optical constants were determined using spectroscopic ellipsometry. Atomic force microscope was used to evaluate the effects of sulphur amount on the morphology of CTS films. As a result, this study suggests a way of minimizing the secondary phases to obtain single phase tetragonal CTS. 相似文献
5.
光伏发电是将“取之不尽、用之不竭”的清洁能源太阳能直接转化为电能的一种新能源技术。大力发展光伏技术并促进其大规模应用是推进能源结构转型的重要途径。光伏发电是通过太阳能电池实现的,经过60多年的发展,涌现了各类太阳能电池,其中硅太阳能电池一直占据主导地位,极大地推动了光伏产业的大规模应用。但硅太阳能电池进一步降低成本愈发困难,而新型薄膜太阳能电池拥有低成本、高效率,且适于多场景应用的优点,成为明日之星。铜锌锡硫硒太阳能电池作为一种新型薄膜太阳能电池,其吸光系数高、弱光响应好、稳定性高、环境友好、组成元素储量丰富且价格低廉,具有很大的发展潜力,近年来受到越来越多的关注。文章重点介绍铜锌锡硫硒太阳能电池的工作原理、关键材料与器件的研究进展以及未来的发展前景。 相似文献
6.
The nanocluster-CdO film was successfully synthesized by sol-gel method using cadmium acetate and 2-metoxyethanol as starting materials and monoethanolamine as a stabilizer. The structural properties of the CdO film were investigated by atomic force microscopy (AFM). AFM results indicate that the CdO film is consisted of nanoclusters with grain size of 75-85 nm. The optical band gap Eg of nanocluster-CdO film was found to be 2.27 eV. The heterostructure, formed from two semiconductor layers having different optical band gaps, p-Si/n-CdO is prepared as a solar cell device. The electrical properties of the device were characterized by current-voltage and capacitance-conductance-voltage methods. The photovoltaic properties of p-Si/n-CdO device have been investigated. The p-Si/n-CdO heterojunction solar cell shows the best values of Voc = 0.41 and Jsc = 2.19 mA/cm 2 under AM1.5 illumination. It is evaluated that this work is useful as a basis for the search of nanomaterial CdO and more competitive p-Si/n-CdO based solar cells, despite the fact that Voc and Jsc are lower than those reported in the literature. 相似文献
7.
A non-vacuum process for Cu(In,Ga)Se 2 (CIGS) thin film solar cells from nanoparticle precursors was described in this work. CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials (CuI, InI 3, GaI 3 and Na 2Se) in organic solvents, by which fine CIGS nanoparticles of about 15 nm in diameter were obtained. The nanoparticle precursors were then deposited onto Mo/glass substrate by the doctor blade technique. After heat treating the CIGS/Mo/glass layers in Se gas atmosphere, a complete solar cell structure was fabricated by depositing the other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%. 相似文献
8.
文章对CdTe薄膜太阳电池中的4个关键科学问题进行了讨论,并对电池器件的性能进行了研究,其中包括高质量硫化镉薄膜、背接触层、CdS/CdTe界面和CdCl2热处理性能的研究。文章作者研究了背电极接触层中Cu掺杂含量对电池性能的影响,通过改变背接触层中Cu的含量,可以改变Cu与Te反应产生的物相成分,从而发现以Cu1.4Te为主导的背接触缓冲层能有效地减少电池I—V 曲线中的“翻转”(roll-over)现象,同时能有效地降低背接触势垒。此外,还研究了CdS/CdTe界面的CdCl2热处理反应,发现当热处理温度高于350℃时,CdS与CdTe之间的互扩散开始发生,此温度对应于CdS由立方相转变为六方相;而在550℃热处理后,S 和Te 互扩散形成的CdSxTe1-x 化合物,其x 值高达11%。通过优化电池制备工艺,获得了在AM1.5标准光源下高达14.6%的CdTe电池转换效率。 相似文献
9.
In x(O,OH,S) y buffer layer has been applied to Cu(In,Ga)Se 2(CIGSe) solar cell by chemical bath deposition (CBD). The cell efficiency was observed to be dependant on film growth mode of In x(O,OH,S) y buffer layer, which was affected by the CBD conditions such as sulfur chemical concentration and deposition time. The fabricated solar cell showing higher conversion efficiency was observed to have non-porous and uniform texture of buffer, whereas the lower conversion efficiency cells were found to have fibrous texture or detached texture of buffer. The fibrous texture and the detached texture induced high series resistance and lower shunt resistance, respectively, which all resulted in lower cell efficiency with reduced fill factor. External quantum efficiency and temperature dependence of open circuit voltage measurements revealed that the lower efficiency cells suffered from higher interface recombination loss due to the related defects. 相似文献
10.
Tin sulfide (SnS) thin films have been deposited by electrodeposition using potentiostaic method on indium doped tin oxide (ITO) coated glass substrates from aqueous solution containing SnCl 2·2H 2O and Na 2S 2O 3 at various potentials. Good quality thin films were obtained at a cathodic potential −1000 mV versus saturated calomel electrode (SCE). The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared (FTIR). X-ray diffraction analysis shows that the crystal structure of SnS thin films is orthorhombic with preferential orientation along 〈0 2 1〉 plane. Microstructural parameters such as crystallite size, micro strain, and dislocation density are calculated and found to depend upon cathodic potentials. SEM studies reveal that the SnS films exhibited uniformly distributed grains over the entire surface of the substrate. The optical transmittance studies showed that the direct band gap of SnS is 1.1 eV. FTIR was used to further characterize the SnS films obtained at various potentials. 相似文献
11.
SnS is a layered material that crystallizes in an orthorhombic structure. This hinders the formation of a dense, pinhole-free morphology. The present study demonstrated the deposition of SnS thin films on soda-lime glass (SLG) and SLG/Mo substrates by spin-coating approach. The developed films were subsequently applied for the fabrication of a thin-film solar cell. The effect of the annealing temperature on the structural, optical, and morphological properties of the deposited SnS films was analyzed. The precursor concentrations and the annealing temperature played a critical role in determining the phase composition and morphological characteristics of the SnS thin films. TFSC with SLG/Mo/SnS/CdS/i-ZnO/AZO/Al configuration was fabricated using the optimal precursor ratio, i.e., Sn:S = 1:1.2, and this device showed a photoconversion efficiency of 0.076%. The reasons for the poor performance of the device were addressed in detail, and the scope for future research to optimize the device performance was elucidated. 相似文献
12.
Recent study shows that the main reason for limiting CZTS device performance lies in the low open circuit voltage, and crucial factor that could affect the V oc is secondary phases like ZnS existing in absorber layer and its interfaces. In this work, the Cu 2ZnSnS 4 thin film solar cells were prepared by sputtering CuSn and CuZn alloy targets. Through tuning the Zn/Sn ratios of the CZTS thin films, the crystal structure, morphology, chemical composition and phase purity of CZTS thin films were characterized by X-Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Raman spectroscopy. The statistics data show that the CZTS solar cell with a ratio of Zn/Sn = 1.2 have the best power convention efficiency of 5.07%. After HCl etching process, the CZTS thin film solar cell with the highest efficiency 5.41% was obtained, which demonstrated that CZTS film solar cells with high efficiency could be developed by sputtering CuSn and CuZn alloy targets. 相似文献
13.
The two-step preparation of compact and crystalline Sb 2S 3 thin films was firstly reported using the pyrolysis of the Sb-butyldithiocarbamate complex solution in DMF. The porous and amorphous Sb 2S 3 thin films were successfully prepared at 170 °C for 30 min, and then can be converted to compact and crystalline Sb 2S 3 thin films at 200 °C for 30 min or 300 °C for 2 min. The corresponding solar cells with the architecture of FTO/TiO 2 compact layer/Sb 2S 3/ spiro-OMeTAD/Au achieved the photoelectric conversion efficiency of 4.16% at 200 °C and 5.05% at 300 °C. The two-step preparation of the compact and crystalline Sb 2S 3 thin films can provide the feasible approach for the fabrication of various microstructure thin film solar cells and the low preparation temperature of 200 °C was also attractive to assemble the flexible Sb 2S 3 thin film solar cells. 相似文献
14.
Thin film tandem solar cells made of amorphous and microcrystalline silicon provide renewable energy at the benefit of low material consumption. As a drawback, these materials do not posses the high carrier mobilities of their crystalline counterpart which limits the feasible material thickness. For maintaining the light absorption as high as possible, photon management is required. Here we show that metallic nanodiscs that sustain localized plasmon polaritons can increase the efficiency of such solar cells if they are incorporated into the dielectric intermediate reflector separating the top and the bottom cell. We provide quantitative estimates for the possible absorption enhancement of optimized bi-periodic nanodiscs that are feasible for fabrication. Emphasis is also put on discussing the impact of obliquely incident sun light on the solar cell performance. 相似文献
15.
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