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1.
I. B. Krynetskii A. Krapf V. P. Martovitskii N. P. Shabanova S. Yu. Gavrilkin V. I. Kovalenko A. P. Rusakov A. I. Golovashkin 《Bulletin of the Lebedev Physics Institute》2011,38(12):349-353
The thermal expansion of single crystals of the Bi2Sr2−x
La
x
CuO6+δ
high-temperature superconducting (HTSC) system in the insulating phase with compositions having no superconducting transition
to a temperature of 1.8 K (x ≥ 0.8) is measured in an arbitrary direction in the (ab) plane in the temperature range of 7–50 K. Temperature regions of material compression upon heating are found. The study
of anomalies in magnetic fields of 3 and 6 T, parallel and perpendicular to the c-axis revealed an anisotropic and nonmonotonic effect of the field on thermal expansion. Such anomalies for the n-type Nd2−x
Ce
x
CuO4−δ
HTSC sample also having no superconducting transition are detected for the first time. The results show that the anomaly
nature is caused by anisotropic electronic ordering, probably, by the charge density wave in the CuO2 plane and superconductivity fluctuations in the insulating phase. 相似文献
2.
S. V. Grigoriev V. A. Dyadkin S. V. Maleyev D. Menzel J. Schoenes D. Lamago E. V. Moskvin H. Eckerlebe 《Physics of the Solid State》2010,52(5):907-913
Two systems of noncentrosymmetric cubic helical magnets Mn1 − y
Fe
y
Si (y = 0.06, 0.08, 0.10) and Fe1 − x
Co
x
Si (x = 0.10, 0.15, 0.20, 0.25, 0.30, 0.35, 0.50) have been compared. The concentration dependences of the critical temperature
and magnetic field have been obtained using small-angle polarized-neutron scattering and analyzed in the framework of the
Bak-Jensen model. It has been established that, among the two interactions that play the main role in these systems, i.e.,
the isotropic symmetric ferromagnetic exchange and the Dzyaloshinskii-Moriya isotropic antisymmetric interaction, the former
interaction determines the critical temperature in the Mn1 − y
Fe
y
Si system and the latter interaction determines this temperature in the Fe1 − x
Co
x
Si system. 相似文献
3.
Guo-Yu Lan Yang-Wei Lin Zong-Hong Lin Huan-Tsung Chang 《Journal of nanoparticle research》2010,12(4):1377-1388
This article describes the synthesis of highly water-soluble Zn
x
Hg1−x
Se
y
S1−y
quantum dots (QDs) in aqueous solution through a simple photo-assisted reaction between ZnSe QDs and mercury(I) nitrate dihydrate
[Hg2(NO3)2·2H2O]. In order to deduce the optimal synthesis conditions, we varied several parameters, including the concentrations of mercaptosuccinic
acid (MSA) and Hg2(NO3)2·2H2O, the illumination time, and the reaction temperature. When irradiated at temperatures below 80 °C, the ZnSe QDs reacted
with the S2− ions formed rapidly from MSA and the Hg2+ ions formed from Hg2
2+ ions to form Zn
x
Hg1−x
Se
y
S1−y
QDs through a process of photo-etching and surface combination. Under different conditions, we prepared a series of Zn
x
Hg1−x
Se
y
S1−y
QDs that emit fluorescence at the maximum wavelengths ranging from 405 to 760 nm. Inductively coupled plasma-mass spectrometry
and transmission electron microscopy/energy dispersive spectrometry revealed that the content of Hg in the Zn
x
Hg1−x
Se
y
S1−y
QDs was greater when the synthesis was conducted at higher temperature. The Zn0.88Hg0.12Se0.44S0.56 QDs exhibit improved photostability than crude ZnSe QDs and possess long lifetimes (τ1 ~ 38 ns and τ2 ~ 158 ns). 相似文献
4.
I. A. Starkov A. S. Kozhemyachenko S. F. Bychkov A. P. Nemudry N. Z. Lyakhov 《Bulletin of the Russian Academy of Sciences: Physics》2010,74(8):1059-1061
The oxygen permeability of ceramic SrCo0.8 − y
Fe0.2Nb
y
O3 − z
(0 ≤ y ≤ 0.2) and La0.3Sr0.7Co0.6Fe0.2Nb0.2O3 − z
disc membranes as a function of temperature and oxygen partial pressure was studied. Kinetic analysis was performed based
on the experimental data on oxygen permeability as a function of oxygen partial pressure. 相似文献
5.
A. A. Kozlovskii V. F. Khirnyi A. V. Semenov V. M. Puzikov 《Physics of the Solid State》2011,53(4):707-716
The electrical conductivity and Seebeck effect in ceramics based on cobaltites Ho1 − x
Sr
x
CoO3 − δ (x = 0.65, 0.75, 0.85, 0.95) and Er1 − x
Sr
x
CoO3 − δ (x = 0.75, 0.85, 0.95) with a perovskite-like structure have been investigated in the temperature range T > 77 K. All the compounds under study are characterized by the variable-range-hopping conductivity with the temperature dependence
of the electrical resistivity corresponding to the Mott law. It has been found that, in the Ho0.35Sr0.65CoO3 − δ compound, thermally excited Co3+ ions contribute to the electrical conductivity with an increase in temperature to 250 K. The Seebeck coefficient of the systems
studied decreases as the strontium concentration and temperature increase. It has been shown that, for an adequate explanation
of this behavior, proper allowance must be made for the splitting of the 3d levels, as well as for the charge disproportionation of the cobalt ions. 相似文献
6.
V. R. Galakhov B. A. Gizhevskii L. V. Elokhina N. N. Loshkareva S. V. Naumov M. Raekers M. Neumann A. M. Balbashov 《JETP Letters》2010,91(3):129-133
The charge states and effective spins of manganese ions in nonstoichiometric single crystals of Ca1 − x
La
y
MnO3 − δ
(x = 0, 0.05, 1) manganites have been determined from the exchange splitting of Mn 3s X-ray photoelectron spectra. The chemical composition of the manganite samples under investigation, including the concentration
of oxygen, has been determined using the data of the X-ray microanalysis of cations. It has been found that the manganite
single crystals under investigation have large defectiveness in both the cation and oxygen sublattices. The efficiency of
the complex use of 3s photoelectron spectroscopy and X-ray microanalysis in the determination of the charge state of manganese ions and violations
of stoichiometry in doped and defected manganites has been demonstrated. 相似文献
7.
A. A. Lotin O. A. Novodvorsky V. Ya. Panchenko L. S. Parshina E. V. Khaydukov D. A. Zuev V. V. Rocheva O. D. Khramova K. D. Chtcherbachev 《Physics of the Solid State》2011,53(3):467-471
Thin films of Cd
y
Zn1 − y
O and Mg
x
Zn1 − x
O (y = 0−0.35, x = 0−0.45) ternary alloys have been grown by pulsed laser deposition onto sapphire substrates. The record solubility limits
of Cd (y = 0.3) and Mg (x = 0.35) have been achieved in hexagonal zinc oxide. The mismatch of the lattice parameters a of Cd0.2Zn0.8O and Mg0.35Zn0.65O does not exceed 1%; in this case, the band gap discontinuity is 1.3 eV. The surface roughness of the films does not exceed
2.5 nm at x = 0−0.27 and y = 0−0.20. 相似文献
8.
G. Epurescu R. Birjega A. C. Galca 《Applied Physics A: Materials Science & Processing》2011,104(3):889-893
Thin films of Mg
x
Zn1−x
O and Mg
x
Zn1−x
O doped with nitrogen were deposited by Radio Frequency plasma beam assisted Pulsed Laser Deposition (RF-PLD) in oxygen or
oxygen-nitrogen discharge with different nitrogen/oxygen ratios. A Nd:YAG laser working at a wavelength of 266 nm, having
a 10 Hz repetition rate was used for the depositions. The energy density of the incident beam was 3 J/cm2 and the RF power was set to 100 W for all the samples. X-ray Diffraction (XRD) and Spectroscopic Ellipsometry (SE) were employed
to investigate the samples. The degree of crystallinity is fount to decrease with increasing the Mg concentration, while the
solubility of Mg in ZnO increases by 30% in the N-doped Mg
x
Zn1−x
O thin films grown by RF-PLD. Segregation of MgO phase at a Mg concentration of 30% for Mg
x
Zn1−x
O thin film is detected both by XRD and SE. The band gap of the samples increases from 3.37 up to 3.57 eV with increasing
the Mg concentration and the nitrogen/oxygen ratio for each Mg concentration. A dependence of the dielectric function (refractive
index) on both stoichiometry and degree of crystalinity is also found, the refractive index having values between 1.7 and
2 in visible spectral range. 相似文献
9.
In the EPR of (La1––x
Gd
y
Ce
x
)Al2 a bottleneck in the relaxation of the conduction electrons to the lattice is present at sufficiently high Gd-concentrations. The bottleneck can be broken by decreasing the Gd-concentration or by adding Cerium as a spin-flip-scatterer.g-factor and line broadening are measured for (La1–y
Gd
y
)Al2 and (La1––x
Gd
y
Ce
x
)Al2 as a function of temperature and Gd- and Ce-concentrations. The Cerium induced relaxationsrate
eL
(Ce) increases linearly with Ce-concentration up tox0.025. This corresponds to the fact, well known by measurements of the Kondo anomalies, that Cerium impurities show no significant interaction up to rather high concentrations. 相似文献
10.
A. I. Galyas O. F. Demidenko G. I. Makovetski? K. I. Yanushkevich L. I. Ryabinkina O. B. Romanova 《Physics of the Solid State》2010,52(4):687-690
Regions of the existence of sulfide Gd
x
Mn1 − x
S and selenide Ti
x
Mn1 − x
Se solid solutions have been identified. Their electrical and thermoelectric properties have been studied in the temperature
range 80–900 K. It has been established that the substitution of Gd2+ and Ti2+ ions for Mn2+ cations initiates reversal of the type of charge carrier with respect to the starting compounds MnS and MnSe. The cation
substitution in solid solutions brings about a change from the hole conduction (α > 0) characteristic of the manganese monosulfide
and monoselenide to the electronic conduction (α < 0). 相似文献
11.
P. A. Popov P. P. Fedorov V. M. Reiterov E. A. Garibin A. A. Demidenko I. A. Mironov V. V. Osiko 《Doklady Physics》2012,57(3):97-99
The thermal conductivity of single crystals of Ca1 − x
Er
x
F2 + x
(x = 0.01, 0.05, 0.07, and 0.10) and Ca1 − x
Tm
x
F2 + x
(x = 0.02, 0.04, and 0.06) solid solutions is studied in the temperature ranges 50–300 and 298–673 K. With increasing content
of rare-earth elements, the behavior of thermal conductivity in these solid solutions changes from the characteristic of defect
single crystals to glasslike. The concentration dependences of thermal conductivity for the two systems differ insignificantly. 相似文献
12.
First-principles calculations are applied to investigate the effect of biaxial strain on the band gap of wurtzite Al
x
Ga1−x
N. The band gap and band gap bowing parameter increase with compressive strain and decrease with tensile strain. The strain-induced
changes in the band gap of Al
x
Ga1−x
N are linear in the strain range of about −1% to 1% while the linearity is invalid out of the range. The linear coefficient
B(x), characterizing the relationship between the band gap and the biaxial stress, with a quadratic form is obtained. The value
of the band gap bowing parameter decreases from 1.0 eV for −2% strain to 0.91 eV for unstrained and to 0.67 eV for 2% strain. 相似文献
13.
R. S. Iskhakov S. V. Stolyar L. A. Chekanova M. V. Chizhik 《Physics of the Solid State》2012,54(4):748-753
The method of spin-wave resonance has been used to detect in multilayer (Co98P2/Co95P5)
N
structures a modification of the exchange spin wave spectrum due to the formation of the first, second, and third Brillouin
zones in a one-dimensional magnon crystal formed by a periodic modulation of the exchange. The band gaps have been measured
for wave vectors k
b
= π/(d
1 + d
2) and 2k
b
. 相似文献
14.
E. I. Lakhno E. I. Burmakin I. V. Korzun G. Sh. Shekhtman 《Physics of the Solid State》2012,54(3):504-507
The rubidium monoferrite RbFeO2-based solid solutions with the composition Rb2 − 2x
Fe2 − x
P
x
O4 have been synthesized, and their crystal structure and the temperature and concentration dependences of the total and electron
conductivities have been studied. The introduction of P5+ ions has been found to sharply decrease the electron conductivity that prevails in pure rubidium monoferrite and, at the
same time, to increase the ionic conductivity. The latter becomes dominant as the phosphorus concentration increases. The
maximum rubidium-cation conductivity of the materials under study is ∼3 × 10−2 S/cm at 300°C and ∼3 × 10−1 S/cm at 700°C. The results have been compared with the previously obtained data for similar solid solutions based on rubidium
monogallate and monoaluminate. 相似文献
15.
M. D. Durruthy-Rodríguez J. Costa-Marrero M. Hernández-Garcia F. Calderón-Pi?ar Célia Malfatti J. M. Yá?ez-Limón 《Applied Physics A: Materials Science & Processing》2011,103(2):467-476
In this work, visible photoluminescence was observed at room temperature in a sintered Pb(Zr1-xTix)1-y NbyO3\mathrm{Pb}(\mathrm{Zr}_{1-x}\mathrm{Ti}_{x})_{1-y} \mathrm{Nb}_{y}\mathrm{O}_{3} perovskite-type structure system, doped with Nb using the next excitation bands 325, 373 and 457 nm. The intensity and energy
of such emissions have been studied by changing the Nb concentration (0<y<0.01) and the Ti content (x), with x=0.20,0.40,0.53,0.60 and 0.80, on both sides of the morphotropic phase boundary (MPB) zone. The principal bands become visible
at energies of 1.73, 2.56 and 3.35 eV. The results reveal the role of the Nb5+ ion substitutions by Zr4+ or Ti4+ ions and the symmetry presented in the rhombohedral or tetragonal side of the MPB. Raman spectra which are similar for compositions:
20/80, 40/60 and 53/47 (tetragonal phases) show nine bands, centered around 137, 194, 269, 331, 434, 550, 612, 712 and 750
cm−1. The spectra for samples 60/40 and 80/20, rhombohedral phase, show significant differences, only six bands appear, centered
around 124, 209, 234, 330, 549 and 682 cm−1. In addition, optical absorption spectroscopy, structural and micro-structural measurements were carried out by using Uv-vis
spectroscopy, X-ray diffraction and scanning electron microscopy techniques, respectively. The experimental results of band
gap energy, e.g., in our samples are in accordance with the findings by J. Baedi et al. in the calculations of band structure,
energy gap and density of states for different phases of Pb(Zr1−x
Ti
x
)O3 using density functional theory (DFT). 相似文献
16.
V. P. Martovitsky V. S. Krivobok 《Journal of Experimental and Theoretical Physics》2011,113(2):288-305
It is found that stressed luminescent samples of Si(001)/Si1 − x
Ge
x
/Si with a germanium concentration of up to 16% contain microcracks. In contrast to ordinary cracks, microcracks are characterized
by partial cracks of the substrate that are not perpendicular to the plane of the plate and are detected by specially designed
X-ray analysis techniques. In a 60-nm-thick layer of SiGe with a germanium concentration of 5%, individual microcracks arise
in samples near the edges of the same type, and the traces of these microcracks coincide with the ripple profiles of the corrugated
growth surface. As the germanium concentration increases, first, the number of microcracks near the edges of a sample increases,
while the corrugated growth relief nearly completely disappears, and then microcracks appear even in the central region of
the sample, thus leading to the vanishing of the curvature of the structure in this region without visible signs of plastic
relaxation. At the same time, even a thin (20 nm) layer of SiGe exhibits a layered structure, and diffuse scattering near
the peak of the SiGe layer increases, which points to the presence of fragments of the layer that are misoriented by ±0.015°;
the intensity of the diffuse scattering may amount to 0.5% of the layer intensity. A spatial analysis of the luminescence
of samples with microcracks shows that the emergence of microcracks hardly affects the peak position and the half-width of
the emission line of the SiGe layer. At the same time, the intensity of exciton emission from both the SiGe layer and the
bulk of silicon is significantly (several times) changed when passing to the regions with microcracks. All the phenomena observed
can be accounted for under the assumption that, between the stages of the loss of the plane crystallization front and the
development of plastic relaxation of misfit stresses, there exists an earlier unknown stage of growth in which the concentration
of nonequilibrium vacancies increases by four to five orders of magnitude and then the vacancies condensate into micropores. 相似文献
17.
N. A. Tulina I. Yu. Borisenko A. A. Ivanov A. M. Ionov I. M. Shmyt’ko A. P. Menushenkov 《Bulletin of the Russian Academy of Sciences: Physics》2011,75(5):605-608
Thin-film heterojunctions Nd2 − x
Ce
x
CuO4 − y
/Ag were obtained. The bipolar effect of resistive switching in these heterostructures was detected and investigated. X-ray
diffraction data indicate the presence of a second phase in thin films; along with the basic phase Nd2 − x
Ce
x
CuO4 − y
, it affects the behavior of the interface of investigated heterojunctions and leads to an alteration of the type of conductivity.
The threshold frequency of alternating voltage at which the resistive switching effect is observed in heterojunctions was
detected. 相似文献
18.
V. S. Rusakov N. I. Chistyakova I. A. Burkovsky A. M. Gapochka T. L. Evstigneeva 《Bulletin of the Russian Academy of Sciences: Physics》2010,74(3):389-393
A M?ssbauer study of the structural and charge states of 57Fe and 119Sn atoms in the compounds of Cu3 −x
Fe
x
SnS4 and Cu2Fe1 − x
Zn
x
SnS4 systems was performed. It was shown that the iron atoms in the compounds of both systems were in the divalent and trivalent
states occupying the tetrahedral positions of the structure. The character of the changes of the degree of covalency of the
Fe2+-S, Fe3+-S and Sn4+-S bonds during the isomorphic substitution in the systems was established. 相似文献
19.
A. P. Gorshkov I. A. Karpovich D. O. Filatov E. D. Pavlova M. V. Dorokhin 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2011,5(3):563-565
The effect of embedding a Mn delta layer in heteronanostructures with an In
x
Ga1 − x
As/GaAs single quantum well on the photosensitivity spectra of the quantum well in Schottky barrier diode structures has been
investigated. It is shown that the embedding of a Mn delta layer results in the broadening of exciton peak and decrease in
the photosensitivity of the quantum well until complete disappearance of photosensitivity at the spacer thickness of 1.5 nm.
The suppression of the quantum well photosensitivity is mainly due to the increase in the concentration of defects such as
recombination centers in the quantum well during embedding of a Mn delta layer. 相似文献
20.
Jie Song Bing-Lin Hong Jun Zheng Pei Lin Ming-Sen Zheng Qi-Hui Wu Quan-Feng Dong Shi-Gang Sun 《Applied Physics A: Materials Science & Processing》2010,98(2):455-460
Ti-substituted LiMn2O4 (LiMn2−x
Ti
x
O4, x=0, 0.15, 0.30, 0.45, 0.60, and 0.75) has been synthesized using solid-state reactions. Their crystal and electronic structures
were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy
(UPS). XRD data suggested that the lattice parameters of LiMn2−x
Ti
x
O4 increase due to the replacement of Mn by Ti ions. XPS results indicated that the substituted Ti ions were in +4 oxidation
state; consequently, the normal oxidation state of Mn ions has been detected by measuring the binding energy splitting of
Mn 3s states, which decreases with the content of substituted Ti. The valence band spectra suggested that the intensity of
e
g
level of Mn 3d orbitals increased due to the increase of the Mn3+/Mn4+ ratio. 相似文献