密度泛函理论对AunSc3(n=1—7)团簇结构和性质的研究

采用密度泛函理论中的广义梯度近似(GGA)对Au _{n Sc3(n=1—7)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算.结果表明,与纯金团簇相比,AunSc3 较早出现了立体结构,三角双锥结构的Au2Sc3是AunSc3(n>2)团簇生长的基元;Sc原子的掺杂提高了增强了Au 关键词： n} Sc₃团簇')" href="#">Au_n Sc₃团簇 几何结构 电子性质     

Design and Analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for Over 60 GHz Operation

A Modulation-Doped Field-Effect Transistor (MODFET) structure realized in InGaN-GaN material system is presented for the first time. An analytical model predicting the transport characteristics of the proposed MODFET structure is given in detail. Electron energy levels inside and outside the quantum well channel of the MODFET are evaluated. The two-dimensional electron gas (2DEG) density in the channel is calculated by self-consistently solving Schrödinger and Poisson's equations simultaneously. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G . The results are compared well with experimental f _T value of a GaN/AlGaN HFET device. By scaling the gate length down to 0.25 m the proposed InGaN-GaN MODFET can be operated up to about 80GHz. It is shown in this paper that InGaN-GaN system has small degradation in f _T as the operating temperature is increased from 300°K to 400°K.     

WnNim(n+m=8)团簇结构与电子性质的理论研究

采用密度泛函理论(DFT)中的B3LYP方法,在Lanl2dz基组水平上对W_nNi_m(n+m=8)团簇的各种可能构型进行了几何参数全优化,得到了它们的基态构型;并对基态构型的平均结合能、Wiberg键级(WBI)、磁学性质、NBO进行了分析,结果表明:团簇随着W原子数的增多,稳定性增强,n≥5时,结构中都含有纯钨团簇的结构基元;W-W键级高于W-Ni键和Ni-Ni键;W₅Ni₃,W₆Ni₂团簇发生了"磁矩猝灭"的现象;在W,Ni原子内部,轨道电荷发生了转移,产生了"轨道杂化"现象,W,Ni原子之间也发生了电荷转移形成了较强的化学键. 关键词： nNi_m(n+m=8)团簇')" href="#">W_nNi_m(n+m=8)团簇 几何结构 电子性质 密度泛函理论     

Structures and electronic properties of Mo2nNn（n=1-5）:a density functional study

The lowest-energy structures and the electronic properties of Mo2nNn(n=1-5) clusters have been studied by using the density functional theory(DFT) simulating package DMol 3 in the generalized gradient approximation(GGA).The resulting equilibrium geometries show that the lowest-energy structures are dominated by central cores which correspond to the ground states of Mo n(n = 2,4,6,8,10) clusters and nitrogen atoms which surround these cores.The average binding energy,the adiabatic electron affinity(AEA),the vertical electron affinity(VEA),the adiabatic ionization potential(AIP) and the vertical ionization potential(VIP) of Mo2nNn(n=1-5) clusters have been estimated.The HOMO-LUMO gaps reveal that the clusters have strong chemical activities.An analysis of Mulliken charge distribution shows that charge-transfer moves from Mo atoms to N atoms and increases with cluster size.     

Density functional theory study on the structural and electronic properties of Ag-adsorbed (MgO)<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> clusters

Equilibrium geometries, charge distributions, stabilities and electronic properties of the Ag-adsorbed (MgO) _n (n = 1–8) clusters have been investigated by density functional theory (DFT) with generalized gradient approximation (GGA) for exchange-correlation functional. The results show that hollow site is energetically preferred for n⩾4, and the incoming Ag atoms tend to cluster on the existing Ag cluster. The Mulliken populations indicate that the interaction between the Ag atom and Magnesia clusters is mainly induced by a weak atomic polarization. The adsorbed Ag atom only causes charge redistributions of the atoms near itself. The effect of the adsorbed Ag atom on the bonding natures and structural features of Magnesia clusters is minor. Furthermore, the investigations on the first energy difference, fragmentation energies and electron affinities show that the Ag(MgO)₄ and Ag(MgO)₆ are the most stable among studied clusters. Supported by the Startup Fund of High-level Personal for Shihezi University (Grant No. RCZX200747)     

First-principles study of electronic structure and elasticity of UAlx (x=1,2,3) system

A detailed theoretical study of structural, electronic, and elastic properties of cubic UAl_x (x=1,2,3) is presented employing the pseudopotential plane-wave method based on density-functional theory. The structure parameters of these three compounds have been calculated within generalized gradient approximation (GGA) and local density approximation (LDA). The calculated results were compared with the experimental data and previous research. With the GGA approximation, the elastic constants, shear modulus, Young's modulus, and Poisson's ratio of UAl_x (x=1,2,3) are derived. According to the generalized mechanical stability criteria for cubic crystals, our calculation suggested that C15 UAl₂ and L12 UAl₃ are stable substance under hydrostatic pressures, but B2 UAl might be expected as a metastable compound, which is not reported in previous literature, and future experimental confirmation is needed. Furthermore, the calculated energy band structure and density of state (DOS) are found to be in good agreement with the theoretical values. Additionally, the charge density of these compounds have also been worked out and analyzed.     

A comparative study on geometries,stabilities, and electronic properties between bimetallic AgnX（X=Au,Cu;n=1-8）and pure silver clusters

Using the meta-generalized gradient approximation (meta-GGA) exchange correlation TPSS functional, the geo- metric structures, the relative stabilities, and the electronic properties of bimetallic Ag n X (X=Au, Cu; n=1–8) clusters are systematically investigated and compared with those of pure silver clusters. The optimized structures show that the transition point from preferentially planar to three-dimensional structure occurs at n = 6 for the Ag n Au clusters, and at n = 5 for Ag n Cu clusters. For different-sized Ag n X clusters, one X (X=Au or Cu) atom substituted Ag n+1 structure is a dominant growth pattern. The calculated fragmentation energies, second-order differences in energies, and the highest occupied molecular orbital–lowest unoccupied molecular orbital (HOMO–LUMO) energy gaps show interesting odd–even oscillation behaviours, indicating that Ag 2,4,6,8 and Ag 1,3,5,7 X (X=Au, Cu) clusters keep high stabilities in comparison with their neighbouring clusters. The natural population analysis reveals that the charges transfer from the Ag n host to the impurity atom except for the Ag 2 Cu cluster. Moreover, vertical ionization potential (VIP), vertical electronic affinity (VEA), and chemical hardness (η) are discussed and compared in depth. The same odd–even oscillations are found for the VIP and η of the Ag n X (X=Au, Cu; n=1–8) clusters.     

Electronic structure and infrared spectrum of a WnC0＇± （n= 1-6） cluster

W_nC^0,± (n=1-6) clusters are investigated by using the density functional theory (DFT) at the B3LYP/LANL2DZ level. We find that the neutral, anionic and cationic ground state structures are similar within the same size, and constituted by substituting a C atom for one W atom in the structures of W_n+1 clusters. The natural bond orbital (NBO) charge analyses indicate that the direction of electron transfer is from the W atom to the 2p orbital of the C atom. In addition, the calculated infrared spectra of the W_nC^0,± (n=2-6) clusters manifest that the vibrational frequencies of neutral, anionic and cationic clusters are similar in a range of 80 cm^-1-864 cm^-1. The high frequency, strong peak modes are found to be an almost stretched deformation of the carbide atom. Finally, the polarizabilities of W_nC^0,± (n=1-6) clusters are also discussed.     

First-principles study of electronic structure and magnetic properties of doped SnO2 (rutile) with single and double impurities

Using the augmented spherical wave method, the electronic structure and magnetic properties of the rutile SnO₂ doped with single and double impurities: Sn_1−xMn_xO₂, Sn_1−xW_xO₂, and Sn_1−2xMn_xW_xO₂ with x=0.0625, have been studied. The scalar-relativistic implementation with a generalized gradient approximation functional has been used for treating the effects of exchange and correlation. The ground state of Mn-, and W-doped SnO₂ systems have a total magnetic moments of 3 and 2 μ_B, respectively. The half-metallic nature appears in Sn_1−2xMn_xW_xO₂, which makes them suitable as spintronic systems with total magnetic moment of 5 μ_B. The advantages of doping SnO₂ with double impurities are investigated in this work. The total moment of the system, the local magnetic moments of the impurities, and their oxidation states are also discussed. Since there are two possible couplings between the impurities, we studied both configurations (ferromagnetic and antiferromagnetic) for double-impurities-doped SnO₂. Magnetic properties and interatomic exchange have been computed for various distances between Mn and W. The indirect exchange between double impurities has similarities with the Zener mechanism in transition metal oxides. Based on the interaction between localized moments, via hybridization between impurities orbitals with the host oxygen, a double exchange mechanism is proposed to explain the ferromagnetism of our system.     

Cs2 NaMF6(M=Al,Ga):Cr3+络合分子体系局域结构和基态分裂的理论研究

采用双自旋轨道耦合系数模型并结合完全能量矩阵的方法对Cs₂NaMF₆(M=Al, Ga):Cr³⁺ 体系中Cr³⁺ 离子的基态分裂和局域结构进行了研究.通过模拟光谱和EPR谱确定了Cr³⁺ 取代 M³⁺ 形成的两种占位结构的畸变角,发现用双自旋轨道耦合系数模型与单自旋轨道耦合系数模型计算出的畸变角Δθ存在较大的差异.这表     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.