Megawatt peak power 8–13 μm CdSe optical parametric generator pumped at 2.8 μm

Infrared pulses, continuously tunable in the 8–13 μm range, and with up to 1 MW peak power, have been achieved using single-stage frequency conversion in a CdSe travelling-wave optical parametric generator, pumped by 100 ps pulses from an actively mode-locked, Q-switched and cavity dumped 2.8 μm Cr,Er:YSGG laser. The external quantum conversion efficiency reached 10%.     

Development of a 4–15 μm infrared GaAs hyperspectral QWIP imager

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4–15.4 μm wavelength region. This effort was a collaboration between NASA’s Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5–5.7 μm, Band 2; 8.5–10 μm, Band 3; 10–12 μm and Band 4; 13.3–14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four “broad” bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.     

Near-infrared sources in the 1–1.3 μm region by efficient stimulated Raman emission in glass fibers

Low-loss glass fiber waveguides are found to be excellent media for Raman lasers and amplifiers in the near-infrared region of the spectrum. Multiwavelength emission in the 1–1.3 μm range is readily obtained by efficient stimulated Raman scattering in single-mode silica fibers. With a 1.064 μm pulsed pump of 250 W in a 175-m, 6-μm diameter single-mode silica fiber we observed four orders of Stokes radiation at 1.12 μm, 1.18 μm, 1.23 μm and 1.3 μm, respectively. Our results imply that pulsed tunable stimulated Raman emission in this wavelength region is possible using kW tunable infrared dye lasers near 1 μm as pumps. These sources are useful for studying the dispersion of glass fibers as well as for other spectroscopic applications.     

Radiative properties of cirrus clouds in the infrared (8–13 μm) spectral region

Atmospheric radiation in the infrared (IR) 8–13 μm spectral region contains a wealth of information that is very useful for the retrieval of ice cloud properties from aircraft or space-borne measurements. To provide the scattering and absorption properties of nonspherical ice crystals that are fundamental to the IR retrieval implementation, we use the finite-difference time-domain (FDTD) method to solve for the extinction efficiency, single-scattering albedo, and the asymmetry parameter of the phase function for ice crystals smaller than 40 μm. For particles larger than this size, the improved geometric optics method (IGOM) can be employed to calculate the asymmetry parameter with an acceptable accuracy, provided that we properly account for the inhomogeneity of the refracted wave due to strong absorption inside the ice particle. A combination of the results computed from the two methods provides the asymmetry parameter for the entire practical range of particle sizes between 1 and 10,000 μm over the wavelengths ranging from 8 to 13 μm. For the extinction and absorption efficiency calculations, several methods including the IGOM, Mie solution for equivalent spheres (MSFES), and the anomalous diffraction theory (ADT) can lead to a substantial discontinuity in comparison with the FDTD solutions for particle sizes on the order of 40 μm. To overcome this difficulty, we have developed a novel approach called the stretched scattering potential method (SSPM). For the IR 8–13 μm spectral region, we show that SSPM is a more accurate approximation than ADT, MSFES, and IGOM. The SSPM solution can be further refined numerically. Through a combination of the FDTD and SSPM, the extinction and absorption efficiencies are computed for hexagonal ice crystals with sizes ranging from 1 to 10,000 μm at 12 wavelengths between 8 and 13 μm.

Calculations of the cirrus bulk scattering and absorption properties are performed for 30 size distributions obtained from various field campaigns for midlatitude and tropical cirrus cloud systems. Ice crystals are assumed to be hexagonal columns randomly oriented in space. The bulk scattering properties are parameterized through the use of second-order polynomial functions for the extinction efficiency and the single-scattering albedo and a power-law expression for the asymmetry parameter. We note that the volume-normalized extinction coefficient can be separated into two parts: one is inversely proportional to effective size and is independent of wavelength, and the other is the wavelength-dependent effective extinction efficiency. Unlike conventional parameterization efforts, the present parameterization scheme is more accurate because only the latter part of the volume-normalized extinction coefficient is approximated in terms of an analytical expression. After averaging over size distribution, the single-scattering albedo is shown to decrease with an increase in effective size for wavelengths shorter than 10.0 μm whereas the opposite behavior is observed for longer wavelengths. The variation of the asymmetry parameter as a function of effective size is substantial when the effective size is smaller than 50 μm. For effective sizes larger than 100 μm, the asymmetry parameter approaches its asymptotic value. The results derived in this study can be useful to remote sensing studies of ice clouds involving IR window bands.     

Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.     

Transmission experiments in the 1.2-1.6 μm wavelength region using graded-index optical fiber cables

Optical fiber transmission systems with extremely long repeater spacing are very attractive for various applications both in land and undersea communication systems. This paper describes the results of transmission experiments, using low-loss fibers in the 1.2-1.6 μm wavelength region. Graded-index optical fibers having an optimum profile at 1.27 μm were manufactured in cables. Average bandwidth was 1,275 MHz-km, and the average optical loss was 0.6 dB/km. The 52.6-km and 62.3-km repeater spacings were realized at 100 Mb/s and 32 Mb/s transmission, respectively, using InGaAsP/InP LD and Ge-APD. The 21.5-km and 12.0-km repeater spacings at 32 Mb/s were also realized by 1.2μm and 1.5μm LEDS, respectively.     

A compact 1.06/1.32/2.94 μm pulsed laser for dentistry

A three-wavelength pulsed laser for dental application is developed. The laser houses the Nd:YAG resonator (1.06/1.32 μm) for soft-tissue treatment and Er:YAG resonator (2.94 μm) for caries removal and fits and fissure treatment. Two heads share the cooling unit and two identical high-voltage power supply modules in order to achieve compactness. The Nd:YAG laser has 10 W at 1.06 μm and 7 W at 1.32 μm with a pulse duration of 100 μs. An Er:YAG laser of 2.94 μm has 3.5 W, 20 Hz and a pulse duration of 250 μs. The beams are delivered through fibers and the laser size is 75×55×32.5 cm.     

GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of −23°C. This laser worked in pulsed operation at 15°C.     

τ→μγ and μ→eγ as probes of neutrino mass models

We discuss the possibility of discriminating between different supersymmetric see-saw models by improving the experimental sensitivity to charged lepton flavour violating processes. Assuming a hierarchical neutrino mass spectrum, we classify see-saw models according to how the hierarchy Δm²Δm²_atm is generated, and study the predictions of each class for the branching ratios of τ→μγ and μ→eγ. The process τ→μγ is found to be a particularly promising tool to probe the fundamental see-saw parameters, and especially to identify the origin of the large atmospheric mixing angle. Predictions for μ→eγ are more model-dependent. We point out that, even with an improvement of the experimental sensitivities by three orders of magnitude, both τ→μγ and μ→eγ could escape detection in models where Δm²_atm is determined by one of the lightest right-handed neutrinos.     

High-speed 1.55 μm InGaAs/InGaAsP multi-quantum well λ/4-shifted DFB lasers

The high-speed modulation properties of 1.5 μm multiquantum-well λ/4-shifted DFB lasers are filly reviewed. In particular, the dependence of intrinsic dynamic properties, such as relaxation oscillation frequency, nonlinear damping phenomenon, and spectral chirping under 10 Gbit/s direct modulation, on the number of quantum wells is systematically investigated and compared with those of bulk lasers. The results indicate that the dependence of the above three factors on the number of wells is clearly explained by the linear gain saturation of the quantum-well lasers and that the optimum number of wells should be more than ten in order to increase the modulation bandwidth.     

Designs of broadband quantum-well infrared photodetectors and 8–12 μm test device results

Several designs of broadband quantum-well infrared photodetectors are considered. The performance characteristics are analyzed by modeling. Test devices designed to cover the 8–12 μm wavelength region are fabricated and characterized. The results show that a broad device can be realized and their performance is in accordance with expectation.     

Development of a 1K × 1K, 8–12 μm QWIP array

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a 1,024 × 1,024 (1K × 1K), 8–12  μm infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using an L3/Cincinnati Electronics silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). We have integrated the 1K × 1K array into an SE-IR based imaging camera system and performed tests over the 50–80 K temperature range achieving BLIP performance at an operating temperature of 57 K. The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. One of the advantages of GaAs QWIP technology is the ability to fabricate arrays in a fashion similar to and compatible with silicon IC technology. The designer’s ability to easily select the spectral response of the material from 3 μm to beyond 15 μm is the result of the success of band-gap engineering and the Army Research Lab is a leader in this area. In this paper we will present the first results of our 1K × 1K QWIP array development including fabrication methodology, test data and imaging capabilities.     

Pulsewidth-dependence of nonlinear energy deposition and redistribution in Si, GaAs and Ge during 1 μm picosecond irradiation

We have used 1 μm pulses ranging in duration from 4–260 ps to measure the pulsewidth dependence of the nonlinear absorption, melting threshold, and resolidification morphologies of Si, GaAs, and Ge. With these materials, we have been able to quantify a variety of nonlinear absorption processes with a single excitation wavelength. We find that the fluence required to melt Si and GaAs is roughly proportional to the square root of the pulsewidth while that required for Ge is nearly pulsewidth independent. A crystalline-to-amorphous transition is observed in Si for pulses less than 10 ps and in GaAs for all pulsewidths, but no such transition is observed in Ge. These observations are shown to be consistent with the various energy deposition and redistribution mechanisms present in each material. Finally, we have used the active nonlinearities in Si and GaAs to construct optical limiters designed to protect sensitive optical components from intense 1 μm radiation.     

On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films

Sol–gel derived Fe₂O₃ films containing about 10 wt% of Er₂O₃ were deposited on porous silicon by dipping or by a spin-on technique followed by thermal processing at 1073 K for 15 min. The samples were characterized by means of PL, SEM and X-ray diffraction analyses. They exhibit strong room-temperature luminescence at 1.5 μm related to erbium in the sol–gel derived host. The luminescence intensity increases by a factor of 1000 when the samples are cooled from 300 to 4.2 K. After complete removal of the erbium-doped film by etching and partial etching the porous silicon, the erbium-related luminescence disappears. Following this, luminescence at 1.5 μm originating from optically active dislocations (“D-lines”) in porous silicon was detected. The influence of the conditions of synthesis on luminescence at 1.5 μm is discussed.     

High power 1.3414 μm Nd:YAP cw laser

The eigen-oscillation mode of the Nd:YAP cw laser has been analysed. The influence of thermal effects arising from the pumping process on the output character of the 1.3414 μm Nd:YAP cw laser has been discussed. The crack problem of the reflective film at a 1.34 μm dielectric mirror has been solved. Based on the aforementioned work, we have been able to achieve an 82.8 W laser output at 1.3414 μm with a nearly polarized beam from a 5.8 mm diameter by 111 mm Nd:YAP rod. The overall efficiency and the slope efficiency are 1.15% and 2.02% respectively, and the fluctuation of the output power at 62 W is less than 1% during continuous operation for 45 min.     

Characteristics of single longitudinal mode oscillation of the 2 μm Tm,Ho:YLF microchip laser

The lasing condition and frequency stability of the single longitudinal mode oscillation of a diode laser pumped 2 μm Tm,Ho:YLF microchip laser at room temperature are reported. It is shown that the microchip laser with an output mirror of 99.0% reflectivity had better single longitudinal mode performance than that with an output mirror of 99.5% reflectivity. The frequency tuning rate when varying the crystal temperature was estimated to be 1.9 GHz/°C. Frequency stability of the microchip laser is examined by the self-beating heterodyne detection method for several delay times between 0.48 and 4.8 μs. It is indicated that the spectral fluctuation is in proportion to the delay time and the increasing rate is 2.3 kHz/μs.     

High-power and high-frequency operation of InGaAsP/InP lasers at 1.3 μm

A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on p-InP substrate. In a cavity length of 300 μm, a maximum continuous wave (CW) power of 130 mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12 GHz at an output power of 52 mW was observed.     

Observations of ω0/2 harmonic emission from 0.35μm laser-irradiated plasmas

Observations of ω₀/2 harmonic emission from both spherical and plane targets irradiated by 0.35 μm, 800 ps laser pulses have been obtained with simultaneous high spectral and temporal resolutions of 16 Å and 20 ps respectively. The ω₀/2 harmonic emission spectrum is interpreted as providing a direct measurement of the frequency of the ω₀/2 plasma waves and hence can be used to estimate the electron temperature.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

The fabrication and performance of 1.3μm DFB EMBH lasers with coplanar contacts

The fabrication and performance characteristics of coplanar contact etched mesa-buried heterostructure (EMBH) distributed feedback (DFB) lasers emitting at 1.3μm wavelength are described. The processing was designed such that the lasers could be evaluated as coplanar contact or conventional (top/bottom) contact devices. The threshold current was as low as 14mA and the 3dB small signal response was as high as 9.4 GHz. Both these properties showed negligible differences when the device was biased either coplanarly or conventionally.