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1.
We report low-temperature conductance measurements in the Coulomb blockade regime on two nominally identical tunnel-coupled quantum dots in parallel defined electrostatically in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. At low interdot tunnel coupling we find that the conductance measured through one dot is sensitive to the charge state of the neighboring dot. At larger interdot coupling the conductance data reflect the role of quantum charge fluctuations between the dots. As the interdot conductance approaches 2e2/h, the coupled dots behave as a single large dot.  相似文献   

2.
The system of charge controlled self-assembled quantum dots coupled to high-Q photonic crystal cavity modes is studied. The quantum dots are embedded in a p-i-n diode structure. Different designs of photonic crystal cavities are used, namely H1 and L3 and the Purcell effect is demonstrated. Furthermore, the fine tuning of the H1 cavity design is studied in order to achieve far field emission profiles that result in higher collection efficiency. An increase in the overall signal from the quantum dot when it is coupled to a cavity is observed, due to the Purcell effect and the improved collection efficiency. This together with the deterministic charging of the quantum dot that is demonstrated, can be used for a single electron spin measurement.  相似文献   

3.
We study the full counting statistics of charge transport through a quantum dot tunnel coupled to one normal and one superconducting lead with a large superconducting gap. As a function of the level detuning, there is a crossover from a regime with strong superconducting correlations in the quantum dot to a regime in which the proximity effect on the quantum dot is suppressed. We analyze the current fluctuations of this crossover in the shot-noise regime. In particular, we predict that the full counting statistics changes from Poissonian with charge 2e, typical for Cooper pairs, to Poissonian with charge e, when the superconducting proximity effect is present. Thus, the onset of the superconducting proximity effect is revealed by the reduction of the Fano factor from 2 to 1.  相似文献   

4.
Based on the framework of effective-mass approximation and variational approach, optical properties of exciton are investigated theoretically in ZnO/MgxZn1−xO vertically coupled quantum dots (QDs), with considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the dot height and the barrier thickness between the coupled wurtzite ZnO QDs) are calculated with the built-in electric field in detail. The results elucidate that structural parameters have a significant influence on the exciton state and optical properties of ZnO coupled QDs. These results show the optical and electronic properties of the quantum dot that can be controlled and also tuned through the nanoparticle size variation.  相似文献   

5.
An electron gas in a strongly oblated ellipsoidal quantum dot with impenetrable walls is considered. Influence of the walls of the quantum dot is assumed to be so strong in the direction of the minor axis (the OZ axis) that the Coulomb interaction between electrons in this direction can be neglected and considered as two-dimensional, coupled. On the basis of geometric adiabaticity we show that in the case of a few-particle gas a powerful repulsive potential of the quantum dot walls has a parabolic form and localizes the dot in the geometric center of the structure. Due to this fact, conditions occur to implement the generalized Kohn theorem for this system.  相似文献   

6.
Current of the spin magnetic moment of an electron coupled with hydrogen-like impurity, placed in the center of a spherical quantum dot, is studied. Confinement potential of the quantum dot is approximated by rectangular infinitely high walls. S-states of electron for both positive and negative values of total energy are considered. Dependences of spin magnetic moment current of electron on the radial variable for different values of dot radius are obtained. It is shown that for quantum dots with large radius, due to weakening of size-quantization effect, corresponding curves approach each other.  相似文献   

7.
The dynamics of a composite system containing two orthogonal degenerate whispering-gallery cavity modes coupling to a quantum dot (QD) is presented by a full quantum approach. The energy levels of the quantum dot are modeled as a V-type three-level system, which consist of the ground state, right- and left-polarized excitons. The counterclockwise mode a and the clockwise mode b are coupled with the transitions corresponding to the right- and left-polarized excitons with coupling rates gR and gL, respectively. An exact solution is proposed in a real-space approach. We majorly discuss the effects of the backscattering rate β on the spectra of the transmission and reflection in a strong coupling regime. A new insight is that one can overcome the excitons' fine structure splitting of a real QD with appropriate backscattering rate β by fine designing the cavity, which would be possible for applications to produce the degenerate entangled photon pairs in a real QD system.  相似文献   

8.
Based on the effective-mass approximation, the donor binding energy in a cylindrical zinc-blende (ZB) symmetric InGaN/GaN coupled quantum dots (QDs) is investigated variationally in the presence of an applied electric field. Numerical results show that the ground-state donor binding energy is highly dependent on the impurity positions, coupled QDs structure parameters and applied electric field. The applied electric field induces an asymmetric distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located at the center of the right dot, the donor binding energy has a maximum value with increasing the dot height. Moreover, the donor binding energy is the largest and insensitive to the large applied electric field (F?400 kV/cm) when the impurity is located at the center of the right dot in ZB symmetric In0.1Ga0.9N/GaN coupled QDs. In addition, if the impurity is located inside the right dot, the donor binding energy is insensitive to large middle barrier width (Lmb?2.5 nm) of ZB symmetric In0.1Ga0.9N/GaN coupled QDs.  相似文献   

9.
Spin-dependent tunneling through a quantum dot coupled to one ferromagnetic and onesuperconducting electrodes is studied in the Andreev reflection (AR) regime. Electricalconductance is calculated within the nonequilibrium Green function technique. Features ofthe AR current involved by the intradot Coulomb correlations (or the dot’s chargingenergy U) and in the presence of the Zeeman splitting of the dotdiscrete level are analyzed in both linear and nonlinear transport regimes. A newinterference effect due to AR is predicted to appear in the case of a weak on-dotrepulsion. Strong Coulomb correlations studied in nonequilibrium situation revealedsignificant modifications of the AR differential conductance occurring only in case ofspin-polarized transmission. Origin of a variety of the multipeak structure of theconductance for the system with the interacting quantum dot, as well as the conditions forthe perfect U-dependent AR transmission are also discussed.  相似文献   

10.
The generation of prismatic dislocation loops in strained quantum dots is investigated. The quantum dots are embedded in a film-substrate heterostructure with mechanical stresses caused by the difference between the lattice parameters of the film (heterolayer) and the substrate. The intrinsic plastic strain ?m of a quantum dot arises from the misfit between the lattice parameters of the materials of the quantum dot and the surrounding matrix. The interface between the heterolayer and the substrate is characterized by a misfit parameter f. The critical radius of a quantum dot R c at which the generation of a dislocation loop in the quantum dot becomes energetically favorable is analyzed as a function of the intrinsic plastic strain ?m and the misfit parameter f.  相似文献   

11.
A novel scheme for a solid-state single-photon router based on a single quantum dot (QD) coupled to a nanomechanical resonator (NR) is proposed and analyzed theoretically. It relies on the coherent coupling between the quantum dot and the NR. We demonstrate that when a single-photon signal is tuned on resonance with the exciton in the QD, one can use a strong pump field to choose to what output port of this signal field is delivered, which is based on the analogue of electromagnetically induced transparency (EIT) effect which we refer it as phonon induced transparency (PIT) in this coupled system. The path between the reflection output port and the transmission output port can be achieved by simply turning off and on the pump field. The numerical results also indicate that this router can operate efficiently in the optical regime and at ultralow pump power as well as short switching time (~ns). This nanoscale router presented here will offer potential applications in scalable solid-state quantum networks and quantum information.  相似文献   

12.
Using the Green’s function technique, we respectively investigate the electron transport properties of two spin components through the system of a T-shaped double quantum dot structure coupled to a Majorana bound state, in which only one quantum dot is connected with two metallic leads. We explore the interplay between the Fano effect and the MBSs for different dot-MBS coupling strength λ, dot-dot coupling strength t, and MBS-MBS coupling strength εM in the noninteracting case. Then the Coulomb interaction and magnetic field effect on the conductance spectra are investigated. Our results indicate that G(ω) is not affected by the Majorana bound states, but a “0.5” conductance signature occurs in the vicinities of Fermi level of G(ω). This robust property persists for a wide range of dot-dot coupling strength and dot-MBS coupling strength, but it can be destroyed by Coulomb interaction in quantum dots. By adjusting the size and direction of magnetic field around the quantum dots, the “0.5” conductance signature damaged by U can be restored. At last, the spin magnetic moments of two dots by applying external magnetic field are also predicted.  相似文献   

13.
In this paper, the electronic structure of an asymmetric self-assembled vertically coupled quantum dots heterostructure has been investigated. The structure consists of two ellipsoidal quantum dot (QDs) caps made with InAs embedded in a wetting layer InAs and surrounded by GaAs. Using the strain dependent k·p theory, the energy of the two lowest states of a single electron/hole which is confined within the coupled QD structure has been calculated. As a result, it can be estimated the energy gap for different geometry parameters and for tuning the external magnetic field. The numerical results show that the energy gap is very sensitive to the size asymmetry of the structure and to the small separation distance of the dots but less sensitive to the existence of an external magnetic field and large interdot distance.  相似文献   

14.
Semiconductor quantum dot superlattices consisting of arrays of quantum dots have shown great promise for a variety of device applications, including thermoelectric power generation and cooling. In this paper we theoretically investigate the effect of long-range order in a quantum dot array on its in-plane lattice thermal conductivity. It is demonstrated that the long-range order in a quantum dot array enhances acoustic phonon scattering and, thus leads to a decrease of its lattice thermal conductivity. The decrease in the ordered quantum dot array, which acts as a phonon grating, is stronger than that in the disordered one due to the contribution of the coherent scattering term. The numerical calculations were carried out for a structure that consists of multiple layers of Si with layers of ordered Ge quantum dots separated by wetting layers and spacers.  相似文献   

15.
Although recent advances in fabrication technologies have allowed the realization of highly accurate nanometric devices and systems, most approaches still lack uniformity and mass-production capability sufficient for practical use. We have previously demonstrated a novel technique for autonomously coupling heterogeneous quantum dots to induce particular optical responses based on a simple phonon-assisted photocuring method in which a mixture of quantum dots and photocurable polymer is irradiated with light. The cured polymer sequentially encapsulates coupled quantum dots, forming what we call a nanophotonic droplet. Recently, we found that each quantum dot in the mixture is preferably coupled with other quantum dots of similar size due to a size resonance effect of the optical near-field interactions between them. Moreover, every nanophotonic droplet is likely to contain the same number of coupled quantum dots. In this paper, we describe the basic mechanisms of autonomously fabricating nanophotonic droplets, and we examine the size- and number-selectivity of the quantum dots during their coupling process. The results from experiments show the uniformity of the optical properties of mass-produced nanophotonic droplets, revealed by emission from the contained coupled quantum dots, due to the fundamental characteristics of our method.  相似文献   

16.
An analysis is made of some characteristics of the low-temperature thermal conductivity of a ballistic quantum dot, attributed to the influence of long-range Coulomb interaction in the geometric capacitance approximation. It is shown that at fairly low temperatures the thermal conductivity K exhibits Coulomb oscillations as a function of the electrostatic potential of the quantum dot. At the maximum of the Coulomb peak we find KT whereas at the minimum KT 3. The dependence K(T) is essentially nonmonotonic at temperatures corresponding to the characteristic spacing between the size-quantization levels in the quantum dot.  相似文献   

17.
The process of formation of the localized defect states due to substitutional impurity in sp2-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp2 orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H18C51X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) εp energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.  相似文献   

18.
柏江湘  米贤武  李德俊 《物理学报》2010,59(9):6205-6212
用一种全量子理论方法研究了波导、光学微盘腔与三能级量子点耦合系统的动力学过程,求出其耦合后的透射模和反射模的解析解. 由于微腔表面粗糙引起反向散射,在微腔内形成两简并回音壁耦合共振模,其耦合率为β;量子点的两激发态分别以耦合率g1,g2与回音壁耦合共振模产生耦合. 在实数空间里,得出透射光谱和反射光谱的数值解,这些三能级模型结果比二能级模型结果更接近真实光学微盘腔系统,能更好地显示耦合系统的动力学特性. 关键词: 模耦合 光学微盘腔 三能级量子点 全量子理论  相似文献   

19.
《Physics letters. A》2006,358(1):57-62
We have studied the transport properties of an ac driving double-bridged quantum dot arrays coupled to electronic leads with a uniform magnetic field applied perpendicularly on it using the method based on Floquet approach. The average current as a function of the driving frequency Ω with different parameters of the system can be obtained by numerically solving the corresponding Floquet equation of the system. We have found that the coupling between the two energy levels of the quantum dots on the same bridge site can cause the current peaks degenerate but the magnetic field can eliminate this degeneracy. Thus it is possible for us to manipulate the position and the number of the resonance current peaks in the coupled double-bridged model by varying some of the parameter of the system.  相似文献   

20.
《Physics letters. A》1999,252(5):251-256
The Feynman-Haken variational path integral theory is generalized to calculate the binding energy Eb of an electron coupled simultaneously to an impurity with varing position and to a longitudinal-optical (LO) phonon field in parabolic quantum dots. Our calculations are applied to some semiconductor materials and the results for the binding energy are obtained for different confinement length R of the dot and arbitrary position of the impurity. It is shown that the polaronic correction to Eb decreases with the displacement of the impurity and increases with the confinement length of the dot. More interestingly, it is not so strong as the polaronic correction to the ground-state energy of the system, and the behaviours of their variation with R are totally different.  相似文献   

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