Flow boiling heat transfer of water in microchannel heat sink

The flow boiling heat transfer of water in a microchannel heat sink with variable initial vapor quality at the inlet is investigated. The stainless steel microchannel heat sink contains ten 640 × 2050 μm channels with a length of 120 mm; the wall roughness is 10 μm. The data on the local heat-transfer coefficient distribution in heat sink length are obtained in the range of mass fluxes from 30 to 90 kg/m²s, heat fluxes from 40 to 170 kW/m², and vapor qualities from 0 to 1. The heat transfer instability associated with dry spots resulting from insufficient wetting of channel walls introduces substantial contribution to the heat transfer mechanism and leads to decreasing heat transfer in heat sink length downward the flow. The developed method for calculating the flow boiling heat transfer of water in a microchannel heat sink allows more accurate prediction of heat transfer drop than available methods.     

Heat transfer enhancement of laminar nanofluids flow in a triangular duct using vortex generator

In this work, two dimensional laminar flow of different nanofluids flow inside a triangular duct with the existence of vortex generator is numerically investigated. The governing equations of mass, momentum and energy were solved using the finite volume method (FVM). The effects of type of the nanoparticles, particle concentrations, and Reynolds number on the heat transfer coefficient and pressure drop of nanofluids are examined. Reynolds number is ranged from 100 to 800. A constant surface temperature is assumed to be the thermal condition for the upper and lower heated walls. In the present work, three nanofluids are examined which are Al₂O₃, CuO and SiO₂ suspended in the base fluid of ethylene glycol with nanoparticles concentrations ranged from 1 to 6%. The results show that for the case of SiO₂–EG, at ? = 6% and Re = 800, it is found that the average Nusselt number is about 50.0% higher than the case of Re = 100.     

Numerical investigation of natural convection heat transfer of nanofluids in a Γ shaped cavity

This paper analyzes the heat transfer and fluid flow of natural convection in a Γ shaped enclosure filled with Al₂O₃/Water nanofluid that operates under differentially heated walls. The Navier–Stokes and energy equations are solved numerically. Heat transfer and fluid flow are examined for parameters of non-uniform nanoparticle size, mean nanoparticle diameter, nanoparticle volume fraction, Grashof number and different geometry of enclosure. Finite volume method is used for discretizating positional expressions, and the forth order Rung-Kuta is used for discretizating time expressions. Also an artificial compressibility technique was applied to couple continuity to momentum equations. Results indicate that using nanofluid causes an increase in the heat transfer and the Nusselt number so that for R = 0.001 in Gr = 10³, the Nusselt number 25%, in Gr = 10⁴ 26%, and in Gr = 10⁵ 28% increases. Furthermore; by decreasing the mean diameters of nanoparticles, Nusselt number increases. By increasing R parameter (d_p,min/d_p,max) and nano particle volume fraction, Nusselt number increases.     

Flow boiling heat transfer of refrigerant R21 in microchannel heat sink

Boiling heat transfer in a refrigerant R 21 flow in a microchannel heat sink is studied. A stainless steel heat sink with a length of 120 mm contains ten microchannels with a size of 640×2050 μm at cross-section with a wall roughness of 10 μm. The local heat-transfer coefficient distribution along the heat sink length is obtained. The ranges of parameters are: mass flow from 68 to 172 kg/m²s, heat fluxes from 16 to 152 kW/m², and vapor quality from 0 to 1. The maximum values of the heat transfer coefficient are observed at the inlet of microchannels. The heat transfer coefficients decrease substantially along the length of channels under high heat flux conditions and, on the contrary, change insignificantly under low heat flux condition. A comparison with the well-known models of flow boiling heat transfer is performed and the range of applicability is defined.     

High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO₂ gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO₂ gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO₂ layer. With a 2 μm gate length, the saturated I_ds and maximum transconductance (G_m) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.     

Microwave electromagnetic property of SiO2-coated carbonyl iron particles with higher oxidation resistance

Flake carbonyl iron (CI) particles and amorphous silica were used to fabricate SiO₂-coated CI particles through the Stober process. The as-prepared SiO₂-coated CI particles were annealed at 500 °C for 1 h under argon and air atmosphere. The XRD results showed that only a little amount of oxides were formed when the SiO₂-coated CI particles were annealed under the air atmosphere. The magnetic properties of the SiO₂-coated CI particles before and after annealing treatment showed little change, indicating that amorphous silica appears to be very effective in reducing oxidation of the CI particles. The reflection loss exceeding −10 dB can be obtained in the frequency range of 9.9-14.6 GHz and a minimum value can be reached to −21.5 dB at 12.2 GHz for the annealed SiO₂-coated CI particles with the composite thickness being 1.5 mm. The mechanism of annealing treatment influence on the electromagnetic properties and microwave absorption of the SiO₂-coated CI particles was also discussed.     

Self-assembly of arrays of micro-rings by colloidal evaporative deposition

We describe self-assembly of arrays of micro-rings in a drying process of a mixture of H₂O and C₂H₅OH (1:1) and trace amounts of NH₄OH with suspended SiO₂ nano-particles of 102.5 nm average diameter. A drop of 2 mm diameter of the colloid is placed on a nearly vertical SiO₂ substrate. A drop spills down and spreads into a wedge-shape thin film. Initially, the colloid wets the substrate. Due to different evaporation rates of solvent components the wettability of the colloid changes. The content of alcohol decreases and the liquid mixture does not wet the substrate any more. The colloidal thin film brakes into rhomboidal segments, which aggregate into a regular lattice of droplets. Each droplet evaporates and forms a micro-ring of about 80 μm in diameter. The micro-rings self-assemble into a rhomboid array with lattice constant ratio of 1:0.9.     

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO2 buffer layer-coated polymer substrates by magnetron sputtering

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO₂ buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO₂ buffer layer under bending have better electrical stability than those with flat SiO₂ buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO₂ buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO₂ buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO₂, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO₂ buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.     

Coupling between Ge-nanocrystals and defects in SiO2

Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO₂ films co-doped with Ge is reported. The PL signal is observed in pure SiO₂, however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO₂ films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO₂ layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO₂ (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO₂ defect.     

Carbon nano dots scale by focused ion beam system for MIS diode nano devices

Metal-insulator-semiconductor (MIS) structures with a nanocrystal carbon (nc-C) embedded in SiO₂ thin films were fabricated using a focused ion beam (FIB) system with a precursor of low-energy Ga⁺ ion and carbon source. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600 °C by the sharp peak at 1565 cm⁻¹ in graphite (sp²), while no peak of diamond (sp³) could be seen at 1333 cm⁻¹. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stuck onto SiO₂ films. The hysterisis loop in the capacitance-voltage characteristics appeared in the MIS device with SiO₂/nc-C/SiO₂ structure in which voltage shift is 0.32 V for radical oxidation and 0.14 V for dry oxidation, respectively.     

Synthesis of Au-CeO2/SiO2 catalyst via adsorbed-layer reactor technique combined with alcohol-thermal treatment

Au-CeO₂/SiO₂ was prepared via adsorbed-layer reactor technique combined with alcohol-thermal treatment. The catalytic performance in complete oxidation of benzene was investigated. TEM, Raman characterization showed that Au particles grew up obviously during alcohol-thermal process, while CeO₂ particles maintained 4 nm in diameter. The content of oxygen vacancies and adsorbed oxygen species on catalysts surface increased apparently. Alcohol-thermally treated Au-CeO₂/SiO₂ and CeO₂/SiO₂ showed similar change in catalytic performance, and were much superior to calcined CeO₂/SiO₂. Of alcohol-thermally treated and calcined CeO₂/SiO₂, initial temperatures of the reaction were 80 °C and 150 °C, respectively. The benzene conversions reached 85% and 40% at 300 °C.     

Model design on calculations of microwave permeability and permittivity of Fe/SiO2 particles with core/shell structure

Fe/SiO₂ particles with core/shell structure were prepared by coating silica on the surface of a commercial spherical carbonyl iron via the hydrolysis process of tetraethyl orthosilicate (TEOS). The electromagnetic performance of commercial carbonyl iron and as-prepared Fe/SiO₂ particles was studied theoretically and experimentally. As predicted by the theoretical calculation based on the Bruggeman formula and the Landau–Lifshitz–Gilbert (LLG) theory, the insulating surface layer of silica was effective to reduce the permittivity parameters of pure carbonyl iron. The measured results showed good agreement with the theoretical prediction. Although there was a little decrease in the permeability of the Fe/SiO₂ core/shell particles, a better impedance match especially at higher frequency range was obtained when used as a microwave absorber. The reflection loss (RL) curves show that the lowest reflection loss of Fe/Epoxy composite (−20.5 GHz) was obtained corresponding to the frequency of 8.5 GHz when the thickness of the absorber was 3 mm. A different trend was observed in Fe/SiO₂/Epoxy composite. The reflection loss value got lower by decreasing the thickness of absorbers. At the thickness of 2.2 mm, a relative low reflection loss (−17 GHz) corresponding to the frequency of 13.6 GHz was obtained. Compared with the Fe/Epoxy composite, the improvement on shifting the reflection loss peak to higher frequency and on reducing the optimal thickness of absorbers was made by Fe/SiO₂/Epoxy composite.     

High heat generation ability in AC magnetic field for nano-sized magnetic Y3Fe5O12 powder prepared by bead milling

Nano-sized magnetic Y₃Fe₅O₁₂ ferrite having a high heat generation ability in an AC magnetic field was prepared by bead milling. A commercial powder sample (non-milled sample) of ca. 2.9 μm in particle size did not show any temperature enhancement in the AC magnetic field. The heat generation ability in the AC magnetic field improved with a decrease in the average crystallite size for the bead-milled Y₃Fe₅O₁₂ ferrites. The highest heat ability in the AC magnetic field was for the fine Y₃Fe₅O₁₂ powder with a 15-nm crystallite size (the samples were milled for 4 h using 0.1 mm? beads). The heat generation ability of the excessively milled Y₃Fe₅O₁₂ samples decreased. The main reason for the high heat generation property of the milled samples was ascribed to an increase in the Néel relaxation of the superparamagnetic material. The heat generation ability was not influenced by the concentration of the ferrite powder. For the samples milled for 4 h using 0.1 mm? beads, the heat generation ability (W g⁻¹) was estimated using a 3.58×10⁻⁴ fH² frequency (f/kHz) and the magnetic field (H/kA m⁻¹), which is the highest reported value of superparamagnetic materials.     

Ultrasonic transcutaneous energy transfer using a continuous wave 650 kHz Gaussian shaded transmitter

This paper proposes ultrasonic transcutaneous energy transfer (UTET) based on a kerfless transmitter with Gaussian radial distribution of its radiating surface velocity. UTET presents an attractive alternative to electromagnetic TET, where a low power transfer density of less than 94 mW/cm² is sufficient. The UTET is operated with a continuous wave at 650 kHz and is intended to power devices implanted up to 50 mm deep. The transmitter was fabricated using a 15 mm diameter disc shape PZT (Lead Zirconate Titanate) element (C-2 grade, Fujiceramics Corporation Tokyo Japan), in which one surface electrode was partitioned into six equal area electrodes (∼23 mm² each) in the shape of six concentric elements. The UTET was experimented using pig muscle tissue, and showed a peak power transfer efficiency of 39.1% at a power level of 100 mW. An efficient (91.8%) power driver for the excitation of the transmitter array, and an efficient rectifier (89%) for the implanted transducer are suggested.To obtain the pressure field shape, the Rayleigh integral has been solved numerically and the results were compared to finite element simulation results. Pressure and power transfer measurements within a test tank further confirm the effectiveness of the proposed UTET.     

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

We have developed low temperature formation methods of SiO₂/Si and SiO₂/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO₃ aqueous solutions at 120 °C), an ultrathin (i.e., 1.3-1.4 nm) SiO₂ layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 °C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 °C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO₂ gap-state density, and (iii) high band discontinuity energy at the SiO₂/Si interface arising from the high atomic density of the NAOS SiO₂ layer.For the formation of a relatively thick (i.e., ≥10 nm) SiO₂ layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO₃ and azeotropic HNO₃ aqueous solutions, respectively. In this case, the SiO₂ formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO₂ layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO₂ layer is slightly higher than that for thermal oxide. When PMA at 250 °C in hydrogen is performed on the two-step NAOS SiO₂ layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 °C.A relatively thick (i.e., ≥10 nm) SiO₂ layer can also be formed on SiC at 120 °C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 °C in pure hydrogen, the leakage current density is decreased by approximately seven orders of magnitude. The hydrogen treatment greatly smoothens the SiC surface, and the subsequent NAOS method results in the formation of an atomically smooth SiO₂/SiC interface and a uniform thickness SiO₂.     

Preparation and characterization of Zn2SiO4: Mn phosphors with hydrothermal methods

Mn²⁺-doped Zn₂SiO₄ phosphors had been prepared by hydrothermal method in stainless-steel autoclaves. Effects of synthesized methods, reaction temperature, ambience of heat treatment on the structure and the luminescence properties of this silicate were studied with X-ray diffraction apparatus (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM) and fluorescence spectrum. Results show that Zn₂SiO₄ nanocrystalline can be obtained by hydrothermal method at relatively low temperatures. The absorption pattern shows an absorption edge at about 380 nm originated from ZnO crystals and two absorption bands at about 215 and 260 nm. Mn²⁺-doped Zn₂SiO₄ has a luminescence band with the wavelength at about 522 nm under 255 nm excitation, and the luminescent intensity increases after being heat treated.     

Oxide circle formation at silicon-polymer interface

We demonstrate that precipitation of implanted erbium ions at silicon-polymer interface initiates oxidation reaction of Si(1 0 0) surface at room temperature. Oxidation reaction starts through spontaneous formation of circular patches of SiO_x and the diameter of these circles grows uniformly with time and touch each other to cover the entire surface by keeping the thickness of these patches almost fixed at 4 nm. The nucleation and in-plane growth rates of SiO_x circles are found to be dependent on the fluence of erbium-implantation, the condition of substrate and can be controlled by controlling oxygen partial pressure of the environment. In addition to the precipitation of erbium ions at silicon-polymer interface, enhancement of concentration of erbium ions was observed at periodic depths within polymer film confirming that in ultra-thin films polymer molecules form layers parallel to substrate surface due to confinement.     

Effects of substrates on the structure and dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films

Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films were grown on Pt(1 1 1)/Ti/SiO₂/Si and LaNiO₃(LNO)/Pt(1 1 1)/Ti/SiO₂/Si substrates by a sol-gel processing technique, respectively. The BTS thin films deposited on annealed Pt(1 1 1)/Ti/SiO₂/Si and annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrates exhibited strong (1 1 1) and perfect (1 0 0) orientations, respectively. The BTS thin films grown on un-annealed Pt(1 1 1)/Ti/SiO₂/Si substrates showed random orientation with intense (1 1 0) peak, while the films deposited on un-annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrate exhibited random orientation with intense (1 0 0) peak, respectively. The dielectric constant of the BTS films deposited on annealed Pt(1 1 1)/Ti/SiO₂/Si, annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si, un-annealed Pt(1 1 1)/Ti/SiO₂/Si and un-annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrates was 512, 565, 386 and 437, respectively, measured at a frequency of 100 kHz. A high tunability of 49.7% was obtained for the films deposited on annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrate, measured at the frequency of 100 kHz with an applied electric field of 200 kV/cm. The high tunability has been attributed to the (1 0 0) texture of the films and larger grain sizes.     

Numerical investigation of EHD effects on heat transfer enhancement and flow pattern of R-134a two phase flow

In this paper the effects of electrohydrodynamics (EHD) on heat transfer enhancement and flow pattern of R134a two-phase mixture, flowing in a horizontal tube, were numerically investigated. A uniform DC electric field was applied through a circular stainless steel rod along the centerline of tube, while the tube was considered as a grounded electrode. The simulations, in order to investigate the EHD mechanism, were performed for a constant heat flux 2000 W/m², voltages between 0 and 5 kV, inlet volume fractions 65% and 85%, mass fluxes from 30 kg/m²s to 50 kg/m²s and electrode diameters between 1.57 mm and 2.4 mm. These flow conditions correspond to stratified flow. The flow regime redistributions under the applied electric field was obtained. The results show that the steady state condition was occurred at the time about 900 ms. According to the results, enhancement ratio is directly proportional to voltage, and it is reversely proportional to electrode diameter, mass flux and inlet volume fraction.     

Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy

We report a study of the annealing temperature and time on Ag catalyst size and density for subsequent growth of ZnO nanorods by catalyst-driven molecular beam epitaxy (MBE). Two different substrates (SiO₂ and SiN_X) for the Ag deposition were used and the thickness of the Ag held constant at 25 Å. Annealing between 600 and 800 °C produced Ag cluster sizes in the range 8-30 nm diameter on SiO₂ and 10-65 nm on SiN_X with a cluster density from 100 to 2500 mm⁻² for SiO₂ and 30 to 1900 mm⁻² for SiN_X. ZnO nanorods grown on these clusters show single-crystal, wurtzite-phase nature and strong band-edge photoluminescence at 380 nm. The nanorods can also be grown selectively on lithographically-patterned dielectric stripes with Ag clusters formed on top by e-beam evaporation and annealing.