Hydrostatic pressure,impurity position and electric and magnetic field effects on the binding energy and photo-ionization cross section of a hydrogenic donor impurity in an InAs Pöschl-Teller quantum ring

Using the variational method and the effective mass and parabolic band approximations, the behaviour of the binding energy and photo-ionization cross section of a hydrogenic-like donor impurity in an InAs quantum ring, with Pöschl-Teller confinement potential along the axial direction, has been studied. In the investigation, the combined effects of hydrostatic pressure and electric and magnetic fields applied in the direction of growth have been taken into account. Parallel polarization of the incident radiation and several values of the applied electric and magnetic fields, hydrostatic pressure, and parameters of the Pöschl-Teller confinement potential were considered. The results obtained can be summarised as follows: (1) the influence of the applied electric and magnetic fields and the asymmetry degree of the Pöschl-Teller confinement potential on the donor binding energy is strongly dependent on the impurity position along the growth and radial directions of the quantum ring, (2) the binding energy is an increasing function of hydrostatic pressure and (3) the decrease (increase) in the binding energy with the electric and magnetic fields and parameters of the confinement potential (hydrostatic pressure) leads to a red shift (blue shift) of the maximum of the photo-ionization cross section spectrum of the on-centre impurity.     

Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga_1−xAl_xAs QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.     

Stark shift and dissociation process of an ionized donor bound exciton in spherical quantum dots

The effect of an electric field on the ground state energy of an exciton bound to an ionized donor (D⁺, X) was studied in CdSe spherical quantum dots where quantum confinement is described by an infinitly deep potential. Calculations have been performed in the framework of the effective mass approximation using a variational method by choosing an appropriate sixty-terms wave function taking into account different interparticles correlations and symetry distorsion induced by the electric field. It appears that the Stark shift is significant even for low fields and depends strongly of spherical dot sizes. The competition between the confinement effect and the Stark effect is discussed as function of the spherical dot size and the applied electric field strength. The (D⁺, X) Stark shift is estimated and its behavior is discussed as a function of the dot radius and electric field strength. The electron and hole average distances have also been calculated and the role of the ionized donor in the excitonic dissociation is established.     

Stark effect in a wedge-shaped quantum box

The effect of an external applied electric field on the electronic ground-state energy of a quantum box with a geometry defined by a wedge is studied by carrying out a variational calculation. This geometry could be used as an approximation for a tip of a cantilever of an atomic force microscope. We study theoretically the Stark effect as function of the parameters of the wedge: its diameter, angular aperture and thickness; as well as function of the intensity of the external electric field applied along the axis of the wedge in both directions; pushing the carrier towards the wider or the narrower parts. A confining electronic effect, which is sharper as the wedge dimensions are smaller, is clearly observed for the first case. Besides, the sign of the Stark shift changes when the angular aperture is changed from small angles to angles θ>π. For the opposite field, the electronic confinement for large diameters is very small and it is also observed that the Stark shift is almost independent with respect to the angular aperture.     

Polarizability of a donor impurity in dielectrically modulated core–shell nanodots

Simultaneous effects of the quantum confinement and electric field on the donor states in ZnS/CdSe core–shell nanodots surrounded by a wide-gap dielectric material are investigated. The results show a pronounced blue-shift of the binding energy due to the dielectric confinement. While in smaller dots the electron is located in the core even for off-center impurities, for increased outer radius it becomes squeezed almost entirely into the shell material. Therefore, the impurity states could be tuned by properly tailoring the heterostructure parameters (size, impurity position) and the dielectric environment, as well as by varying the electric field strength.     

Donor impurity in vertically-coupled quantum-dots under hydrostatic pressure and applied electric field

In this work we make a predictive study on the binding energy of the ground state for hydrogenic donor impurity in vertically-coupled quantum-dot structure, considering the combined effects of hydrostatic pressure and in growth-direction applied electric field. The approach uses a variational method within the effective mass approximation. The low dimensional structure consists of three cylindrical shaped GaAs quantum-dots, grown in the z-direction and separated by Ga_1-xAl_xAs barriers. In order to include the pressure dependent Γ – X crossover in the barrier material a phenomenological model is followed. The main findings can be summarized as follows: 1) for symmetrical and asymmetrical dimensions of the structures, the binding energy as a function of the impurity position along the growth direction of the heterostructure has a similar behavior to that shown by the non-correlated electron wave function with maxima for the impurity in the well regions and minima for the impurity in the barrier regions, 2) for increasing radius of the system, the binding energy decreases and for R large enough reaches the limit of the binding energy in a coupled quantum well heterostructure, 3) the binding energy increases for higher Aluminum concentration in the barrier regions, 4) depending of the impurity position and of the structural dimensions of the system (well width and barrier thickness) – and because changing the height of the potential barrier makes possible to induce changes in the degree of symmetry of the carrier-wave function –, the electric field and hydrostatic pressure can cause the impurity binding energy increases or decreases, and finally 5) the line-shape of the binding energy curves are mainly given by the line-shape of the Coulomb interaction.     

Impurity-related polarizability and photoionization-cross section in double quantum wells under electric fields and hydrostatic pressure

Double quantum well heterostructures are quite important for the exploration of correlated electron states in two-dimensional systems. By using the variational procedure, within the effective-mass and parabolic-band approximations, the effects of both electric field and hydrostatic pressure on the shallow-donor-impurity related polarizability and photoionization cross-section in GaAs–Ga_1−xAl_xAs double asymmetric quantum wells are presented. The electric field is considered to be applied along the growth direction. It is found that the impurity binding energy and polarizability can be tuned by means of an applied external electric field or hydrostatic pressure in asymmetric double quantum wells, a behavior which could be used in the design and construction of semiconductor devices. The photoionization cross-section magnitude increases as the pressure and applied electric field are increased, except beyond the Γ–X crossover in the barrier material, where a decrease of the photoionization cross-section is expected due the smaller confinement of the impurity wave function.     

The electric field dependence of a donor impurity in graded <Emphasis Type="Bold">GaAs</Emphasis> quantum wires

The effect of the electric field on the binding energy of the ground state of a shallow donor impurity in a graded GaAs quantum-well wire (GQWW) was investigated. The electric field was applied parallel to the symmetry axes of the wire. Within the effective mass approximation, we calculated the binding energy of the donor impurity by a variational method as a function of the wire dimension, applied electric field, and donor impurity position. We show that changes in the donor binding energy in GQWWs strongly depend not only on the quantum confinement, but also on the direction of the electric field and on the impurity position. We also compared our results with those for the square quantum-well wire (SQWW). The results we obtained describe the behavior of impurities in both square and graded quantum wires. PACS 68.65.-k; 71.55.-i; 71.55.Eq     

Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential

In this work are studied the intense laser effects on the impurity states in GaAs-Ga_{1− x} Al _x As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction of the quantum well whereas the magnetic field is considered to be in-plane. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included through the Floquet method by modifying the confinement potential associated to the heterostructure. The results are presented for several configurations of the dimensions of the quantum well, the position of the impurity atom, the applied electric and magnetic fields, and the incident intense laser radiation. The results suggest that for fixed geometry setups in the system, the binding energy is a decreasing function of the electric field intensity while a dual monotonic behavior is detected when it varies with the magnitude of an applied magnetic field, according to the intensity of the laser field radiation.     

Quantum well excitons in an electric field: two versus three dimensional behavior

Previous calculations have shown a transition between two dimensional and three dimensional behavior of excitons confined in a semiconducting quantum well structure as a function of electric field. We here present calculations of the exciton binding energy as a function of electric field using a two parameter variational wave function of the form used in the absence of the electric field by Matsuura and Shinozuka. Our calculations were performed using a finite potential barrier model for the confinement of the exciton in the quantum well. The results of our calculations confirm the validity of the conclusion that the variational exciton wave function goes from being of a purely 2D hydrogenic type at small well widths and/or low electric fields to a 3D hydrogenic type in wide wells and/or high electric fields.     

Tuning third harmonic generation of impurity doped quantum dots in the presence of Gaussian white noise

We perform a broad exploration of profiles of third harmonic generation (THG) susceptibility of impurity doped quantum dots (QDs) in the presence and absence of noise. We have invoked Gaussian white noise in the present study. A Gaussian impurity has been introduced into the QD. Noise has been applied to the system additively and multiplicatively. A perpendicular magnetic field emerges out as a confinement source and a static external electric field has been applied. The THG profiles have been pursued as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, Al concentration, dopant potential, relaxation time and noise strength assume different values. Moreover, the role of the pathway through which noise is applied (additive/multiplicative) on the THG profiles has also been deciphered. The THG profiles are found to be decorated with interesting observations such as shift of THG peak position and maximization/minimization of THG peak intensity. Presence of noise alters the characteristics of THG profiles and sometimes enhances the THG peak intensity. Furthermore, the mode of application of noise (additive/multiplicative) also regulates the THG profiles in a few occasions in contrasting manners. The observations highlight the possible scope of tuning the THG coefficient of doped QD systems in the presence of noise and bears tremendous technological importance.     

Optical properties of exciton confinement in wurtzite ZnO/MgxZn1−xO coupled quantum dots

Based on the framework of effective-mass approximation and variational approach, optical properties of exciton are investigated theoretically in ZnO/Mg_xZn_1−xO vertically coupled quantum dots (QDs), with considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the dot height and the barrier thickness between the coupled wurtzite ZnO QDs) are calculated with the built-in electric field in detail. The results elucidate that structural parameters have a significant influence on the exciton state and optical properties of ZnO coupled QDs. These results show the optical and electronic properties of the quantum dot that can be controlled and also tuned through the nanoparticle size variation.     

Effects of Temperature and Electric Field on the Coherence Time of a RbCl Parabolic Quantum Dot Qubit

We study the effects of the temperature and electric field on the coherence time of a RbCl parabolic quantum dot (PQD) qubit by using the variational method of Pekar type, the Fermi Golden Rule and the quantum statistics theory (VMPTFGRQST). The ground and the first excited states’ (GFES) eigenenergies and the eigenfunctions of an electron in the RbCl PQD with an applied electric field are derived. A single qubit can be realized in this two-level quantum system. It turns out that the coherence time is a decreasing function of the temperature and the electric field, whereas it is an increasing one of the effective confinement length (ECL). By changing the electric field, the temperature and the ECL one can adjust the coherence time. Our research results may be useful for the design and implementation of solid-state quantum computation.     

Exploring electro-optic effect of impurity doped quantum dots in presence of Gaussian white noise

We explore the profiles of electro-optic effect (EOE) of impurity doped quantum dots (QDs) in presence and absence of noise. We have invoked Gaussian white noise in the present study. The quantum dot is doped with Gaussian impurity. Noise has been administered to the system additively and multiplicatively. A perpendicular magnetic field acts as a confinement source and a static external electric field has been applied. The EOE profiles have been followed as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, relaxation time, Al concentration, dopant potential, and noise strength possess different values. In addition, the role of mode of application of noise (additive/multiplicative) on the EOE profiles has also been scrutinized. The EOE profiles are found to be adorned with interesting observations such as shift of peak position and maximization/minimization of peak intensity. However, the presence of noise and also the pathway of its application bring about rich variety in the features of EOE profiles through some noticeable manifestations. The observations indicate possibilities of harnessing the EOE susceptibility of doped QD systems in presence of noise.     

Electric-field effect on shallow impurity ground state in nanowire superlattice

We have developed a variational formalism to analyze the effect of electric field on the donor ground state in a nanowire superlattice with cylindrical cross-section. The trial function is taken as a product of the free-electron ground state wave function with an envelope function that is a solution of a differential equation arising from the Schrödinger variational principle. We establish a close relationship between the donor ground state energy and density of charge induced by the unbound electron at the point of donor location. Also, we show that electric field applied along the crystal growth direction can easily shift the peak position of the free-electron density distribution from the central well toward one of the nanowire ends, providing a variation of the average electron-ion separation and a considerable alteration of the donor ground state energy.     

Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements

Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangulax confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.     

Electronic states in a Pöschl–Teller-like quantum well: Combined effects of electric field, hydrostatic pressure, and temperature

The work is devoted to present a theoretical study of the influences of external probes, such as applied electric field and hydrostatic pressure, on the electron and hole states in a Pöschl–Teller quantum well. The calculations have been done in the framework of the variational method. The dependence of the ground state energy of an electron and/or hole confined in the quantum well has been obtained as a function of the applied electric field and hydrostatic pressure. Different values of the asymmetry parameters of the Pöschl–Teller potential as well as temperature have been considered. It is shown that as a result of the increase in the electric field there is an augment of the ground state energy, and also that by increasing the quantum well width the effects of applied electric field are strengthened. It is obtained from the calculations that the ground state energy is a decreasing (increasing) function of the hydrostatic pressure (temperature). It is found that in the high pressure regime the energy grows with pressure, which is a previously unknown result. In the case of holes, the energy is always an increasing function both of the pressure and the temperature. Besides, the behavior of the photoluminescence peak energies associated to transitions between the ground states of electrons and heavy holes in the system is also reported.     

Nonlinear optical absorption and optical rectification in near-surface double quantum wells: combined effects of electric, magnetic fields and hydrostatic pressure

The theoretical study of the combined effects of electric and magnetic fields and hydrostatic pressure on the nonlinear optical absorption and rectification is presented for electrons confined within an asymmetrical GaAs?Ga_1-x Alx As double quantum well. The effective mass, parabolic band, and envelope function approaches are used as tools for the investigation. The electric field is taken to be oriented along the growth direction of the heterostructure and the magnetic field is applied parallel to the interfaces of the quantum wells. The pressure-induced mixing between the two lowest conduction bands is considered both in the low and high pressure regimes. According to the results obtained it can be concluded that the nonlinear optical absorption and rectification coefficients depend in a non-trivial way on some internal and external parameters such as the size of the quantum wells, the direction of applied electric field, the magnitude of hydrostatic pressure, the stoichiometry of the wells and barriers, and the intensity of the applied magnetic field.     

Hydrostatic pressure and electric field effects on the normalized binding energy in asymmetrical quantum wells

We have investigated the simultaneous effects of the hydrostatic pressure and electric field on the ground subband level and on normalized binding energy of an on-center donor in asymmetrical GaAs/AlGaAs quantum wells within the effective-mass approximation and a variational approach. We found that the well size at which the impurity energy changes from positive to negative value (turning point) strongly depends on the asymmetry and hydrostatic pressure. As a key result, we suggest that the study of the normalized binding energy for various values of the electric field in direct and inverse polarization regimes can be used to feel the quantum well asymmetry and to unambiguously find out the effective pressure acting on a given heterostructure.     

Combined effects of hydrostatic pressure and temperature on nonlinear properties of an exciton in a spherical quantum dot under the applied electric field

Within the framework of the effective-mass approximation, we have calculated the combined effects of hydrostatic pressure, temperature and applied electric field on an exciton confined in a typical GaAs/Ga_0.7Al_0.3As quantum dot. Several inputs of the confinement potential, hydrostatic pressure, temperature, and applied electric field have been considered. Our findings suggest that (1) the effect of the confinement strength is dominant over the electric field effect, (2) the oscillator strength is an increasing function of the hydrostatic pressure, (3) the absorption coefficients and energy difference depend strongly on the hydrostatic pressure but weakly on the temperature, (4) the absorption coefficients with considering excitonic effects are stronger than those without considering excitonic effects and the absorption peak will move to the right side induced by the electron-hole interaction, (5) the applied electric field may effect either the size or the position of absorption peaks of excitons.