Cu2ZnSnSe4 thin films prepared by selenization of co-electroplated Cu-Zn-Sn precursors

A novel technique for growth of high quality Cu₂ZnSnSe₄ (CZTSe) thin films is reported in our work. The CZTSe thin films were fabricated onto Mo layers by co-electroplating Cu-Zn-Sn precursors followed by annealing in the selenium vapors at the substrate temperature of 550 °C. The morphology and structure of CZTSe thin films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum, respectively. The results revealed that the single phase was in the CZTSe thin films, and the other impurities such as ZnSe and Cu₂SnSe₃ were not existed though they were difficult to distinguish both from EDS and XRD.     

Preparing Cu2ZnSnS4 films using the co-electro-deposition method with ionic liquids

Cu2ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn＋Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.     

Photoluminescence study of disordering in the cation sublattice of Cu2ZnSnS4

In this study we investigated the influence of the degree of disordering in the cation sublattice on low temperature photoluminescence (PL) properties of Cu₂ZnSnS₄ (CZTS) polycrystals. The degree of disordering was changed by using different cooling rates after post-annealing at elevated temperatures. The results suggest that in the case of higher degree of cation sublattice disorder radiative recombination involving defect clusters dominates at T = 10 K. These defect clusters induce local band gap energy decrease in CZTS. The concentration of defect clusters can be reduced by giving more time for establishing ordering in the crystal lattice. As a result, radiative recombination mechanism changes and band-to-impurity recombination involving deep acceptor defect with ionization energy of about 200 meV starts to dominate in the low temperature PL spectra of CZTS polycrystals.     

Thermal stability of HfO2 nanotube arrays

Thermal stability of highly ordered hafnium oxide (HfO₂) nanotube arrays prepared through an electrochemical anodization method in the presence of ammonium fluoride is investigated in a temperature range of room temperature to 900 °C in flowing argon atmosphere. The formation of the HfO₂ nanotube arrays was monitored by current density transient characteristics during anodization of hafnium metal foil. Morphologies of the as-grown and post-annealed HfO₂ nanotube arrays were analyzed by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although monoclinic HfO₂ is thermally stable up to 2000 K in bulk, the morphology of HfO₂ nanotube arrays degraded at 900 °C. A detailed X-ray photoelectron spectroscopy (XPS) study revealed that the thermal treatment significantly impacted the composition and the chemical environment of the core elements (Hf and O), as well as F content coming from the electrolyte. Possible reasons for the degradation of the nanotube at high temperature were discussed based on XPS study and possible future improvements have also been suggested. Moreover, dielectric measurements were carried out on both the as-grown amorphous film and 500 °C post-annealed crystalline film. This study will help us to understand the temperature impact on the morphology of nanotube arrays, which is important to its further applications at elevated temperatures.     

Study on the photovoltaic property of Cu4SnS4 synthesized by mechanochemical process

Photovoltaic property of Cu₄SnS₄ (CTS) is studied by employing a superstrate solar cell structure of Mo/CTS/In₂S₃/TiO₂/fluorine-doped tin oxide (FTO) glass for the first time. The CTS absorber layer was prepared by a combination of mechanochemical and doctor blade processes. The annealing effects on the structural, optical and electronic properties of the CTS absorber layer were investigated. The novel CTS absorber layer shows conversion efficiency as high as 2.34% under the standard AM 1.5 condition.     

Investigations on co-evaporated Cu2SnSe3 and Cu2SnSe3-ZnSe thin films

Cu₂SnSe₃ is an important precursor material for the growth of Cu₂ZnSnSe₄, an emerging solar cell absorber layer via solid state reaction of Cu₂SnSe₃ and ZnSe. In this study, we have grown Cu₂SnSe₃ (CTSe) and Cu₂SnSe₃-ZnSe (20%) films onto soda-lime glass substrates held at 573 K by co-evaporation technique. The effect of annealing of these films at 723 K for an hour in selenium atmosphere is also investigated. XRD studies of as-deposited Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films indicated SnSe as secondary phase which disappeared on annealing. The direct optical band gap of annealed Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films were found to be 0.90 eV and 0.94 eV respectively. Raman spectroscopy studies were used to understand the effect of ZnSe on the properties of Cu₂SnSe₃.     

Doctor-bladed Cu2ZnSnS4 light absorption layer for low-cost solar cell application

The doctor-blade method is investigated for the preparation of Cu₂ZnSnS₄ films for low-cost solar cell application. Cu₂ZnSnS₄ precursor powder, the main raw material for the doctor-blade paste, is synthesized by a simple ball-milling process. The doctor-bladed Cu₂ZnSnS₄ films are annealed in N₂ ambient under various conditions and characterized by X-ray diffraction, ultraviolent/vis spectrophotometry, scanning electron microscopy, and current-voltage (J-V) meansurement. Our experimental results indicate that (i) the X-ray diffraction peaks of the Cu₂ZnSnS₄ precursor powder each show a red shift of about 0.4°; (ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu₂ZnSnS₄, whereas an overlong annealing introduces defects; (iii) the band gap value of the doctor-bladed Cu₂ZnSnS₄ is around 1.41 eV; (iv) the short-circuit current density, the open-circuit voltage, the fill factor, and the efficiency of the best Cu₂ZnSnS₄ solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO₂/In₂S₃/Cu₂ZnSnS₄/Mo are 7.82 mA/cm², 240 mV, 0.29, and 0.55%, respectively.     

Fabrication of open-ended TiO2 nanotube arrays by anodizing a thermally evaporated Ti/Au bilayer film

Fabrication of TiO₂ nanotube arrays (TNAs) with through-hole morphology is practical significance to enhance the photocatalytic activity of TNAs, as well as expanding their applications. In present work, open-ended TNAs are synthesized on a conductive Au layer by anodizing a thermally evaporated Ti/Au bilayer film. In the anodizing process, the upper Ti layer is transformed into well-aligned TNAs. The barrier layer under the growing TNAs ultimately touches the Au layer and is completely dissolved by the electrochemical etching. In order to avoid the bubble disruption of TNAs caused by the water electrolysis after the Au layer is exposed to the electrolyte, a specific non-aqueous electrolyte is used. The XRD results reveal that the as-formed open-ended TNAs are amorphous and can be transformed into anatase by annealing at 350 °C.     

Fabrication, characterization and photoelectrochemical properties of Fe2O3 modified TiO2 nanotube arrays

TiO₂ nanotube (NT) arrays modified by Fe₂O₃ with high sensibility in the visible spectrum were first prepared by annealing anodic titania NTs pre-loaded with Fe(OH)₃ which was uniformly clung to the titania NTs using sequential chemical bath deposition (S-CBD). The photoelectrochemical performances of the as-prepared composite nanotubes were determined by measuring the photo-generated currents and voltages under illumination of UV-vis light. The titania NTs modified by Fe₂O₃ showed higher photopotential and photocurrent values than those of unmodified titania NTs. The enhanced photoelectrochemical behaviors can be attributed to the modified Fe₂O₃ which increases the probability of charge-carrier separation and extends the range of the TiO₂ photoresponse from ultraviolet (UV) to visible region due to the low band gap of 2.2 eV of Fe₂O₃.     

First-principles study of elastic and thermo-physical properties of kesterite-type Cu2ZnSnS4

The lattice constants and elastic constants of the kesterite-type Cu₂ZnSnS₄ have been calculated using density-functional theory (DFT). The calculated lattice constants are in good agreement with the experimental data. The calculated elastic constants indicate that the bonding strength along the [1 0 0] and [0 1 0] directions is as strong as the one along the [0 0 1] direction. The high B/G ratio shows that the kesterite-type Cu₂ZnSnS₄ compound has ductile behavior. Finally, using the Debye model, the volume, bulk modulus and heat capacity as a function of temperature for the kesterite-type CZTS have been estimated at different pressures. The Debye temperature and Gruneisen parameter are 157 K and 2.28 at 300 K temperature, respectively. The present results can give some information for the design of the kesterite-type CZTS compounds, and these can also be used to stimulate future experimental and theoretical work.     

Effects of Cu2−xS phase removal on surface potential of Cu2ZnSnS4 thin-films grown by electroplating

Cu₂ZnSnS₄ (CZTS) has an optical band gap of 1.4–1.5 eV, which is similar to that of Cu(In,Ga)Se₂ (CIGS), and a high absorption coefficient (>10⁴ cm⁻¹) in the visible light region. In previous reports, CIGS thin-film solar cells have been shown to improve the performance of the device since the secondary phase is removed by Potassium cyanide (KCN) etching treatment. Therefore, in this study we applied a KCN etching treatment on CZTS and measured the effects. We confirmed the removal of Cu_2−xS via Kelvin probe force microscopy (KPFM) and Raman scattering spectroscopy. The effects of the experiment indicate that we can define with precision the location of the secondary phases, and therefore the control of the secondary phases will be easier and more efficient. Such capabilities could improve the solar cell performance of CZTS thin-films.     

Electronic and optical properties of kesterite Cu2ZnSnS4 under in-plane biaxial strains: First-principles calculations

The electronic structures and optical properties of Cu₂ZnSnS₄ (CZTS) under in-plane biaxial strain were systematically investigated using first-principles calculations based on generalized gradient approximation and hybrid functional method, respectively. It is found that the fundamental bandgap at the Γ point decreases linearly with increasing tensile biaxial strain perpendicular to c-axis. However, a bandgap maximum occurs as the compressive biaxial strain is 1.5%. Further increase of compressive strain decreases the bandgap. In addition, the optical properties of CZTS under biaxial strain are also calculated, and the variation trend of optical bandgap with biaxial strain is consistent with the fundamental bandgap.     

Growth of branched rutile TiO2 nanorod arrays on F-doped tin oxide substrate

Branched rutile TiO₂ nanorod arrays were directly synthesized on the F-doped tin oxide (FTO) substrate through a two-step hydrothermal treatment by a seeding method with TiO₂-nanorods as seeds. The samples were characterized respectively by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and field-emission scanning electron microscopy (FESEM). Results showed that TiO₂ nanorods with nanobranches (TiO₂-NB) grew vertically on the FTO substrate. XRD and HRTEM results confirmed that the TiO₂-NB arrays were single-crystalline rutile. The optical properties of the samples were studied with a UV-vis spectrometer. The photocatalytic activity of the TiO₂-NB film is better than that of P25 particulate film. Direct electrical pathway and improved light-harvesting efficiency were crucial for the superior photocatalytic activity of the TiO₂-NB arrays.     

Flowerlike PtCl4/Bi2WO6 composite photocatalyst with enhanced visible-light-induced photocatalytic activity

Flowerlike PtCl₄/Bi₂WO₆ composite photocatalyst was successfully synthesized through a simple two-step method involving a template-free hydrothermal process and the following impregnation treatment. The samples were fully characterized by the study of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), and UV-Vis absorption spectra. The results indicated that the doping of Pt species did not affect the crystal structure and the morphology of Bi₂WO₆ photocatalyst, but it had great influences on the photocatalytic activity of Bi₂WO₆ towards rhodamine-B (RhB) degradation. Besides, the Pt species was found to be present as PtCl₄ in the composite samples, and also an optimal Pt species content on the surface of Bi₂WO₆ photocatalyst was discovered with the highest photocatalytic ability. The improved photocatalytic performance could be ascribed to the enhanced interfacial charge transfer and the inhibited recombination of electron-hole pairs. Meanwhile, a possible mechanism for RhB photocatalytic degradation over PtCl₄/Bi₂WO₆ catalyst was also proposed.     

Synthesis and characterization of Mn-doped Zn2SiO4/SiO2 phosphor particles in core-shell structure

Manganese-doped zinc silicate (Zn₂SiO₄:Mn) is a kind of phosphor material that has a photo-luminescent (PL) and cathode-luminescent (CL) properties with intensive green light emission at 520 nm. The particles consisting of SiO₂@Zn₂SiO₄:Mn (SiO₂ core-Zn₂SiO₄:Mn shell) were synthesized via colloidal process and forced precipitation. After drying, the Zn/Mn precipitates were coated on the surface of SiO₂ particles. The Zn/Mn precipitates reacted with SiO₂ and transformed to Zn₂SiO₄:Mn by suitable calcination. The microstructure, crystalline phase, and luminescent characteristics of the products were studied. Besides, a CL device consisting of the core-shell powder was characterized.     

Synthesis and characterization of thermoluminescent Li2B4O7 nanophosphor

Lithium borate (Li₂B₄O₇) is a low Z_eff, tissue equivalent material that is commonly used for medical dosimetry using the thermoluminescence (TL) technique. Nanocrystals of lithium borate were synthesized by the combustion method for the first time in the laboratory. TL characteristics of the synthesized material were studied and compared with those of commercially available microcrystalline Li₂B₄O₇. The optimum pre-irradiation annealing condition was found to be 300 °C for 10 min and that of post-irradiation annealing was 300 °C for 30 min. The synthesized Li₂B₄O₇ nanophosphor has very poor sensitivity for low doses of gamma up to 10¹ Gy whereas from 10¹ to 4.5×10² Gy this phosphor exhibits a linear response and then from 4.5×10² to 10³ Gy it shows supralinearity. Thermoluminescence properties of Li₂B₄O₇ nanophosphor doped with Cu has also been investigated in this paper. It shows low fading and a linear response over a wide range of gamma radiation from 1×10² to 5×10³ Gy. Therefore the synthesized lithium borate nanophosphor doped with Cu may be used for high dose measurements of gamma radiations.     

Photoluminescence characterization of polycrystalline n-type Cu2O films

Electrodeposition was used to deposit Cu₂O thin films on ITO substrates. Photoresponse of the film clearly indicated n-type behavior of Cu₂O in photoelectrochemical cells. The temperature dependence of photoluminescence (PL) revealed that the spectra consist of donor-acceptor pair emissions and the recombination between electrons bound to donors and free holes. We observed that the dominant intrinsic defect, oxygen vacancies, creates a donor energy level at 0.38 eV below the bottom of the conduction band. As a result, this donor level acts as a center for both PL emissions and to produce n-type conductivity in the electrodeposited Cu₂O films. In addition, an acceptor energy level at 0.16 eV from the top of the valence band was observed.     

类花状ZnO-CoFe2 O4 复合纳米管束的制备及其电磁波吸收特性

在90 ℃水溶液中采用两步晶体生长法制备出类花状ZnO-CoFe₂O₄复合纳米管束.ZnO纳米管束的管壁厚度大约为60 nm,管的直径大约为350 nm,CoFe₂O₄纳米颗粒连续包覆在ZnO纳米管束的表面,CoFe₂O₄纳米颗粒尺寸小于40 nm, 壳层厚度随着CoFe₂O₄在ZnO-CoFe₂O_{4 关键词： 类花状 2}O₄')" href="#">ZnO-CoFe₂O₄ 纳米管束 微波吸收剂     

Influence of anodization parameters on the morphology of TiO2 nanotube arrays

TiO₂ nanotube arrays can be fabricated by electrochemical anodization in organic and inorganic electrolytes. Morphology of these nanotube arrays changes when anodization parameters such as applied voltage, type of electrolyte, time and temperature are varied. Nanotube arrays fabricated by anodization of commercial titanium in electrolytes containing NH₄F solution and either sulfuric or phosphoric acid were studied at room temperature; time of anodization was kept constant. Applied voltage, fluoride ion concentration, and acid concentrations were varied and their influences on TiO₂ nanotubes were investigated. The current density of anodizing was recorded by computer controlled digital multimeter. The surface morphology (top-view) of nanotube arrays were observed by SEM. The nanotube arrays in this study have inner diameters in range of 40-80 nm.     

The effect of pre-pattern on the morphology and growth speed of TiO2 nanotube

In this work, we presented a new method which directly acts on the surface of the Ti sheet by mechanical micro-etching using a grating ruling engine. The effect of the pre-pattern on the morphology and growth speed of TiO₂ nanostructure formed on the Ti sheet with the traditional anodization method was investigated. A novel wall structure was observed and the growth speed of TiO₂ nanotube (NT) was greatly affected by the pre-pattern. The wall structure increases the surface-to-volume ratio of the nanotube arrays. The new method provided the possibility of further optimization of fast growth of TiO₂ nanostructure and improving the efficiency of dye-sensitized solar cell (DSSC) and photocatalysis.