Performance optimization for terahertz quantum cascade laser at higher temperature using genetic algorithm

The aim of this work is to establish an approach for obtaining improved design parameters for high temperature operation of terahertz quantum cascade lasers using a multi-objective evolutionary algorithm. For studying the lasing conditions of a quantum cascade laser, a self-consistent model is adopted. This model uses standard wave function approximation and effective mass approximation with relevant scattering mechanisms to solve Schrodinger’s equation for the cascaded quantum wells. Fermi’s Golden Rule is then used to calculate the corresponding lifetime of each eigen states. To describe the coherent evolution of wave functions and phase breaking, density matrix formalism is employed. Subsequently, laser rate equations are used for calculating the parameters related to electronic transport in the device. These parameters are then utilized for investigating the temperature dependence of existing terahertz quantum cascade lasers. Finally, using an optimization technique based on Genetic algorithm, design parameters for resonant-phonon quantum cascade laser are obtained within the terahertz frequency range. The results illustrate that this optimization process can offer improvement in the performance of quantum cascade lasers in terahertz region at an elevated temperature. Moreover, the results also reveal that significant increase in operating temperature of a resonant phonon terahertz QCL is unlikely and hence novel design approaches should be considered for operating THz QCLs at room temperature.     

Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below

We report measurements of the intersubband scattering rate between the first and second subband in a quantum-well structure with subband spacing (11 meV) smaller than the optical phonon energy. We measure the electron population in the second subband under CW excitation by a far-infrared laser tuned to the intersubband absorption frequency. This allows us to determine the intersubband relaxation rate using detailed balance. These measurements are novel because they are performed at very low excitation densities (I10 μW/cm²). In this regime the heating of the electron gas is negligible, so that the optically excited population in the upper subband greatly exceeds any thermal population induced by laser heating. Therefore, the relaxation rate we measure is controlled by intersubband scattering rather than carrier cooling. At low temperature we obtain an intersubband lifetime of which is power independent below 10⁻¹ W/cm², and approximately temperature independent for lattice temperatures between T=10 and 2.5 K.     

High field transport properties in a GaN/AlGaN heterostructure

The drift velocity, electron temperature, electron energy and momentum loss rates of a two-dimensional electron gas are calculated in a GaN/AlGaN heterojunction (HJ) at high electric fields employing the energy and momentum balance technique, assuming the drifted Fermi–Dirac (F–D) distribution function for electrons. Besides the conventional scattering mechanisms, roughness induced new scattering mechanisms such as misfit piezoelectric and misfit deformation potential scatterings are considered in momentum relaxation. Energy loss rates due to acoustic phonons and polar optical phonon scattering with hot phonon effect are considered. The calculated drift velocity, electron temperature and energy loss rate are compared with the experimental data and a good agreement is obtained. The hot phonon effect is found to reduce the drift velocity, energy and momentum loss rates, whereas it enhances the electron temperature. Also the effect of using drifted F–D distribution, due to high carrier density in GaN/AlGaN HJs, contrary to the drifted Maxwellian distribution function used in the earlier calculations, is brought out.     

Energy relaxation of magnetically confined electrons in quantum cascade lasers

By measuring the light emitted from a quantum cascade laser placed in a high magnetic field, we have investigated the energy relaxation of 0D magnetically confined electrons in the active quantum wells of the structure. The experiment consists of injecting electrons by tunnelling into one upper subband level and monitoring a resonant interaction with optical phonons produced by Landau tuning of subband energy levels. For this purpose, the upper level lifetime is probed by measuring the laser intensity as a function of magnetic field, under constant current bias values. Both the laser intensity and the bias voltage oscillate periodically with the reciprocal of the field. In addition, at high magnetic fields, the current threshold goes through deep minima at antiresonance values. The lifetime is then deduced and analyzed using the strong electron–phonon coupling scheme which is typically applied to quantum dots.     

Theoretical estimates of optimal parameters for quantum cascade lasers

The quantum cascade (QC) laser is a new light source which is based on one type of carrier (electrons) making transitions between energy levels created by quantum confinement. In this paper, focusing on the working conditions which a QC laser should satisfy, we have discussed the subband lifespans in QC laser active regions. The results show that the population inversion condition can be achieved by resonant tunneling associated with an optical phonon, and this population inversion can be facilitated by the short escaping time of electrons from one active region to the neighboring active region. Our calculations also show that the lifespans of levels 3 and 2 are dominated by the phonon scattering time, and the escaping time from one active region to the next active region is determined by the thickness of exit barrier and the proper design of the miniband between the active regions.     

Electron states in diluted magnetic semiconductors

One of the remarkable properties of the II–VI diluted magnetic semiconductor (DMS) quantum dot (QD) is the giant Zeeman splitting of the carrier states under application of a magnetic field. This splitting reveals strong exchange interaction between the magnetic ion moment and electronic spins in the QD. A theoretical study of the electron spectrum and of its relaxation to the ground state via the emission of a longitudinal optical (LO) phonon, in a CdSe/ZnMnSe self-assembled quantum dot, is proposed in this work. Numerical calculations showed that the strength of this interaction increases as a function of the magnetic field to become more than 30 meV and allows some level crossings. We have also shown that the electron is more localized in this DMS QD and its relaxation to the ground state via the emission of one LO phonon is allowed.     

Modelling of temperature effects on the characteristics of mid-infrared quantum cascade lasers

The effect of temperature on the characteristics of GaAs/AlGaAs quantum cascade lasers operating in the mid-infrared range is theoretically investigated and compared with reported experimental results. We have included the dependence of the phonon scattering rate, linewidth variations and thermionic lifetime on temperature. It is found that the characteristics depend strongly on temperature. Our model yields threshold current densities in good agreement with the experiments. The effect of injection efficiency on the unsaturated modal gain is also considered.     

Charge-carrier dynamics in single-wall carbon nanotube bundles: a time-domain study

We present a real-time investigation of ultra-fast carrier dynamics in single-wall carbon nanotube bundles using femtosecond time-resolved photoelectron spectroscopy. The experiments allow us to study the processes governing the sub-picosecond and the picosecond dynamics of non-equilibrium charge carriers. On the sub-picosecond time scale the dynamics are dominated by ultra-fast electron–electron scattering processes, which lead to internal thermalization of the laser-excited electron gas. We find that quasiparticle lifetimes decrease strongly as a function of their energy up to 2.38 eV above the Fermi level – the highest energy studied experimentally. The subsequent cooling of the laser-heated electron gas to the lattice temperature by electron–phonon interaction occurs on the picosecond time scale and allows us to determine the electron–phonon mass-enhancement parameter λ. The latter is found to be over an order of magnitude smaller if compared, for example, with that of a good conductor such as copper. Received: 4 March 2002 / Accepted: 7 March 2002 / Published online: 3 June 2002     

Magnetic field effects on THz quantum cascade laser: A comparative analysis of three and four quantum well based active region design

We consider the influence of additional carrier confinement, achieved by application of strong perpendicular magnetic field, on inter Landau levels electron relaxation rates and the optical gain, of two different GaAs quantum cascade laser structures operating in the terahertz spectral range. Breaking of the in-plane energy dispersion and the formation of discrete energy levels is an efficient mechanism for eventual quenching of optical phonon emission and obtaining very long electronic lifetime in the relevant laser state. We employ our detailed model for calculating the electron relaxation rates (due to interface roughness and electron–longitudinal optical phonon scattering), and solve a full set of rate equations to evaluate the carrier distribution over Landau levels. The numerical simulations are performed for three- and four-well (per period) based structures that operate at 3.9 THz and 1.9 THz, respectively, both implemented in GaAs/Al_0.15Ga_0.85As. Numerical results are presented for magnetic field values from 1.5 T up to 20 T, while the band nonparabolicity is accounted for.     

Long polaron lifetime in InAs/GaAs self-assembled quantum dots

We have investigated the polaron dynamics in n-doped InAs/GaAs self-assembled quantum dots by pump-probe midinfrared spectroscopy. A long T1 polaron decay time is measured at both low temperature and room temperature, with values around 70 and 37 ps, respectively. The decay time decreases for energies closer to the optical phonon energy. The relaxation is explained by the strong coupling for the electron-phonon interaction and by the finite lifetime of the optical phonons. We show that, even for a large detuning of 19 meV from the LO photon energy in GaAs, the carrier relaxation remains phonon assisted.     

太赫兹量子级联激光器中有源区上激发态电子向高能级泄漏的研究

利用热力学统计理论和激光器输出特性理论,建立了太赫兹量子级联激光器(THz QCL)有源区中上激发态电子往更高能级电子态泄漏的计算模型,以输出功率度量电子泄漏程度研究分析了晶格温度和量子阱势垒高度对电子泄漏的影响.数值仿真结果表明,晶格温度上升会加剧电子泄漏,并且电子从上激发态泄漏到束缚态的数量大于泄漏到阱外连续态,同时温度的上升也会降低激光输出功率.增加量子阱势垒高度能抑制电子泄漏,并且有源区量子阱结构中存在一个最优量子阱势垒高度. THz QCL经过最优量子阱势垒高度优化后,工作温度得到提升,其输出功率相比于以往的结果也有所提高.研究结果对优化THz QCL有源区结构、抑制电子泄漏和改善激光器输出特性有指导作用.     

Electron–hole two-stream instability in a quantum semiconductor plasma with exchange-correlation effects

The electron–hole two-stream instability in a quantum semiconductor plasma has been studied including electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures of the plasma species. Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate of the two-stream instability. The effects of electron– and hole–phonon collision, quantum recoil effects, the streaming velocities, and the corresponding threshold on the growth rate are investigated numerically. Considering the phonon susceptibility allows the acoustic mode to exist and the collisional instability arises in combination with drift of the holes.     

Investigation of the radiative lifetime in core–shell CdSe/ZnS and CdSe/ZnSe quantum dots

Using the one band effective mass approximation model we computed the optical properties of the spherical shaped CdSe/ZnS and Cdse/ZnSe core–shell quantum dot (CSQD). For each structure we calculated the charge carrier energies and corresponding wave functions. We investigated the dependence of the carrier energies on various parameters of the CSQD, including its size. Then we calculated the radiative recombination lifetime for the two types of CSQDs nanocrystals. We found that as the size of the dot is increased the optical gap of CSQD is reduced, resulting in a reduction in electron energies and an increase in hole energies. We have shown that the radiative recombination lifetime in the CdSe/ZnS and CdSe/ZnSe CSQDs decreased by increasing the shell thickness around the core of the QD. We also showed that the radiative lifetime in the CdSe/ZnS is less than that in the CdSe/ZnSe CSQDs and is sensitive to the size and nature of shell of the semiconductor's material.     

Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots

Polaron decay in n-type InAs quantum dots has been investigated using energy dependent, mid-infrared pump–probe spectroscopy. By studying samples with differing ground state to first excited state energy separations the relaxation time has been measured between 40 and 60 meV. The low-temperature decay time increases with increasing detuning between the pump energy and the optical phonon energy and is maximum (55 ps) at 56 meV. From the experimentally determined decay times we are able to extract a low-temperature optical phonon lifetime of 13 ps for InAs QDs. We find that the polaron decay time decreases by a factor of 2 at room temperature due to the reduction of the optical phonon lifetime.     

Intersublevel transitions in self-assembled quantum dots

Intersublevel transitions in semiconductor quantum dots are transitions of a charge carrier between quantum dot confined states. In InAs/GaAs self-assembled quantum dots, optically active intersublevel transitions occur in the mid-infrared spectral range. These transitions can provide a new insight on the physics of semiconductor quantum dots and offer new opportunities to develop mid-infrared devices. A key feature characterizing intersublevel transitions is the coupling of the confined carriers to phonons. We show that the effect of the strong coupling regime for the electron–optical phonon interaction and the formation of mixed electron–phonon quasi-particles called polarons drastically affect and control the dynamical properties of quantum dots. The engineering of quantum dot relaxation rates through phonon coupling opens the route to the realization of new devices like mid-infrared polaron lasers. We finally show that the measurement of intersublevel absorption is not limited to quantum dot ensembles and that the intersublevel ultrasmall absorption of a single quantum dot can be measured with a nanometer scale resolution by using phonon emission as a signature of the absorption. To cite this article: P. Boucaud et al., C. R. Physique 9 (2008).     

Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser

We have performed the calculation of resonant-phonon transition in a terahertz quantum cascade laser. The electron wavefunctions and energy levels are obtained by solving the Schroedinger and Poisson equations selfconsistently. The scattering rates of the confined, interface, and bulk phonons are calculated by using the Fermi golden rule. It has been shown that the confined phonon scattering is comparable to the interface phonon scattering and should be taken into consideration in the calculation.     

Linear frequency-doubling in dual Mid-IR-wavelength quantum cascade laser active region

In this paper we have proposed a novel quantum cascade laser active region design to obtain a dual-mid-IR-wavelength laser which is capable of frequency-doubling (13.77–6.88 μm) without utilizing nonlinear processes in two coupled shallow and deep quantum well structures. Optimized design of the active region leads to higher dipole matrix elements and thus higher laser performances. This method can be used to design laser structures with different frequency ratios.     

Incomplete phonon relaxation in X-ray emission

We calculate the phonon broadening in x-ray emission for Li, Na, Al, and K, treating the excitation and the subsequent emission as one quantum process. When the core-hole lifetime width is of the same order as the Debye energy, incomplete phonon relaxation gives a partial quenching of the Stokes shift and an additional width. This effect has previously not been seriously investigated; we find here that it gives a likely explanation of the broad Li emission edge.     

Interface phonon assisted transition in double quantum well

A detailed calculation of interface phonon assisted electron intersubband transition in double GaAs/AlGaAs quantum well structure is presented. Our calculation concentrates on the lowest two subbands which can be designed to be in resonance with a given interface phonon mode. Various phonon mode profiles display quasi-symmetric or quasi-antisymmetric shapes. The quasi-antisymmetric phonon modes give rise to much larger transition rates than those assisted by quasi-symmetric ones. The transition rate reaches a maximum when the subband separation coincides with a given phonon mode energy. The calculation procedure presented here can be easily applied to the design and simulation of other low dimensional semiconductor structures, such as quantum cascade lasers. Received 22 December 2002 Published online 23 May 2003 RID="a" ID="a"e-mail: bhwu@263.net     

Terahertz dual-wavelength quantum cascade laser based on GaN active region

In this paper a novel terahertz (THz) quantum cascade laser (QCL) based on GaN/AlGaN quantum wells has been proposed, which emits at two widely separated wavelengths 33 and 52 μm simultaneously in a single active region. The large LO-phonon energy (～90 meV), the ultrafast resonant phonon depopulation of the lower radiative levels, suppression of the electrons that escape to the continuum states and selective carrier injection and extraction all together lead to a considerable enhancement in the operating temperature of the structure. All calculations have been done at a temperature of 265 K. Moreover, similar behavior of the output optical powers is another remarkable feature, which makes both wavelengths useful for special applications.