Domain wall pinning in narrow ferromagnetic ring structures probed by magnetoresistance measurements

We present a magnetoresistance study of magnetization reversal and domain wall pinning effects in a mesoscopic narrow ferromagnetic Permalloy ring structure containing notches. The size and strength of the attractive pinning potential created by a notch is measured and the resistance minimum at remanence is found to occur when a single transverse domain wall is pinned at the notch, in agreement with the results of numerical simulations of the anisotropic magnetoresistance. When a field is applied in the direction corresponding to a potential well edge, a novel magnetic state with a very wide domain wall is stabilized, giving rise to a characteristic signature in the magnetoresistance at such angles.     

Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling

We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR.     

Magnetoresistance in magnetic domain wall systems

The contribution to the magnetoresistance (MR) was calculated for a single magnetic domain wall present in a small 2D impure ferromagnetic wire. On assuming low-temperatures and spin-independent impurity scattering the mechanism responsible for a positive contribution to MR is quantum interference. It is found that the contribution increases with impurity concentration and reduces with the width of the wall. The influence on the MR of a homogeneous electric field is proved to be spin-dependent.     

Photoinduced Barkhausen effect in the ferromagnetic semiconductor (Ga,Mn)As

Magnetization of ferromagnetic materials commonly occurs via random jumps of domain walls between pinning sites, a phenomenon known as the Barkhausen effect. Using strongly focused light pulses of appropriate power and duration we demonstrate the ability to selectively activate single jumps in the domain wall propagation in (Ga,Mn)As, manifesting itself as a discrete photoinduced domain wall creep as a function of illumination time. The propagation velocity can be increased over 7 orders of magnitude varying the illumination power density and the magnetic field.     

Domain wall pinning controlled by the magnetic field of four nanoparticles in a ferromagnetic nanowire

This paper presents the results of theoretical and experimental investigations of the domain wall pinning in a planar ferromagnetic system consisting of a nanowire and four rectangular uniformly magnetized nanoparticles located at an angle to the nanowire axis. Based on the calculations of the interaction energy of the domain wall with stray fields of nanoparticles and the micromagnetic simulation, it has been demonstrated that, in this system, there are different variants of the domain wall pinning, which are determined by the relative orientation of the magnetic moments of nanoparticles and the magnetization of the nanowire. The possibility of the creation of magnetic logic cells based on the structures under consideration has been discussed.     

Investigation of magnetization reversal process in pinned CoFeB thin film by in-situ Lorentz TEM

Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems.     

Measurements of nanoscale domain wall flexing in a ferromagnetic thin film

We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga(1-x)Mn(x)As, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be ～10(14) cm(-3). Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Our data provide evidence for a much higher intrinsic domain wall mobility for flexing than previously observed in optically probed μm scale measurements.     

Domain wall pinning in a ferromagnetic nanowire by stray fields of nanoparticles

Domain wall pinning in a planar ferromagnetic system consisting of a nanowire and two uniformly magnetized nanoparticles parallel to it is investigated. Micromagnetic simulations and calculations of the energy of interaction between domain wall and stray fields of nanoparticles show that four variants of domain wall pining are observed in such a system and are determined by the relative orientation of magnetic moments of nanoparticles and the magnetization of the nanowire.     

Direct observation of domain wall scattering in patterned Ni80Fe20 and Ni nanowires by current-voltage measurements

We present measurements of domain wall resistivity, pinned by nanoconstrictions in single layer ferromagnetic wires of Ni80Fe20 and Ni. Unpinning domain walls from the constriction by current-induced switching allows for an unambiguous measurement of their resistivity changes, namely, 1.7% in Ni80Fe20 and 1.82% in Ni and both positive, which supports the theory of spin-dependent impurity scattering. By deriving an empirical relation for the various constriction widths, the large percentage changes of resistivity in ballistic nanocontacts are reproduced, showing a correlation between domain wall magnetoresistance and ballistic magnetoresistance.     

Current-driven switching in a single exchange-biased ferromagnetic layer

We demonstrate spin-transfer torque effects in a single exchange-biased ferromagnetic layer. A current through a point contact to the exchange-biased Co layer reverses the magnetization of a nanodomain in the layer hysteretically for low applied magnetic fields and reversibly for high fields (up to 9 T). These effects are the inverse of the domain wall magnetoresistance, in the same way that similar effects in multilayers are the inverse of giant magnetoresistance.     

Optical-controlled domain wall resistance in magnetic nanojunctions

Domain walls in ferromagnetic metals are known to be a source of resistance. In the present work resistance of a domain wall in a ferromagnetic nanojunction is investigated using the semiclassical approach. The analysis is based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type magnetic domain wall is considered and the effect of the electron-photon interaction on the resistance is studied. The results indicate that polarization and wavelength of the photon play a significant role in the magnetoresistance. The resistance of the nanojunction decreases as the wavelength of the photon increases. It is also shown that the domain wall resistance decreases by increasing the Fermi energy.     

Modes of periodic domain wall motion in ultrathin ferromagnetic layers

Magnetization reversal in a periodic magnetic field is studied on an ultrathin, ultrasoft ferromagnetic Pt/Co(0.5 nm)/Pt trilayer exhibiting weak random domain wall (DW) pinning. The DW motion is imaged by polar magneto-optic Kerr effect microscopy and monitored by superconducting quantum interference device susceptometry. In close agreement with model predictions, the complex linear ac susceptibility corroborates the dynamic DW modes segmental relaxation, creep, slide, and switching.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

Frequency dependence of coercive properties

Significant frequency dependence of domain wall coercive field, due to the widening of the hysteresis loops, was observed based on AC hysteresis curve measurements in epitaxial magnetic garnet films. Domain wall oscillation measurements did not reveal any frequency dependence. The different results of the two measurement methods were analyzed, and the observed frequency dependence was attributed to the inertia of the moving domain walls. It was shown that the real value of the domain wall pinning field cannot be determined by AC hysteresis measurements, even in non-conducting materials.     

Magnetization distribution in magneto-optical medium on patterned substrate

A micromagnetic calculation of magnetization in a ferromagnetic thin film with a perpendicular magnetic anisotropy fabricated on a patterned substrate is carried out. The domain wall energy of pinning of domain walls between up and down magnetized domains is shown to be determined by geometry of substrate. Estimations of regions of stability of two different domain structures in the hexagonal lattice of circle patches are given.     

Universal magnetic domain wall dynamics in the presence of weak disorder

The motion of elastic interfaces in disordered media is a broad topic relevant to many branches of physics. Field-driven magnetic domain wall motion in ultrathin ferromagnetic Pt/Co/Pt films can be well interpreted within the framework of theories developed to describe elastic interface dynamics in the presence of weak disorder. Indeed, the three theoretically predicted dynamic regimes of creep, depinning, and flow have all been directly evidenced in this model experimental system. We discuss these dynamic regimes and demonstrate how field-driven creep can be controlled not only by temperature and pinning, but also via interactions with magnetic entities located inside or outside the magnetic layer. Consequences of confinement effects in nano-devices are briefly reviewed, as some recent results on domain wall motion driven by an electric current or assisted by an electric field. Finally new theoretical developments and perspectives are discussed.     

Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_5 Thin Layers

We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe₅ thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_p.Below T_p,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe₅ thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.     

消磁场对纳米铁磁线磁畴壁动力学行为的影响

为了实现基于磁畴壁运动的自旋电子学装置, 掌握磁畴壁动力学行为是重要争论之一.研究了在外磁场驱动下L-型纳米铁磁线磁畴壁的动力学行为. 通过微磁学模拟,在各种外磁场的驱动下考察了纳米铁磁线磁畴壁的动力学特性; 在较强外磁场的驱动下, 在不同厚度纳米线上考察了纳米线表面消磁场对磁畴壁动力学行为的影响. 为了进一步证实消磁场对磁畴壁动力学的影响, 在垂直于纳米线表面的外磁场辅助下分析了磁畴壁的动力学行为变化. 结果表明, 随着纳米线厚度和外驱动磁场强度的增加, 增强了纳米线表面的消磁场的形成, 使得磁畴壁内部自旋结构发生周期性变化, 导致磁畴壁在纳米线上传播时出现Walker崩溃现象. 在垂直于纳米线表面的外磁场辅助下, 发现辅助磁场可以调节消磁场的强度和方向. 这意味着利用辅助磁场可以有效地控制纳米铁磁线磁畴壁的动力学行为.     

Creation of an antiferromagnetic exchange spring

We present evidence for the creation of an exchange spring in an antiferromagnet due to exchange coupling to a ferromagnet. X-ray magnetic linear dichroism spectroscopy on single crystal Co/NiO(001) shows that a partial domain wall is wound up at the surface of the antiferromagnet when the adjacent ferromagnet is rotated by a magnetic field. We determine the interface exchange stiffness and the antiferromagnetic domain wall energy from the field dependence of the direction of the antiferromagnetic axis, the antiferromagnetic pendant to a ferromagnetic hysteresis loop. The existence of a planar antiferromagnetic domain wall, proven by our measurement, is a key assumption of most exchange bias models.     

The stochastic nature of the domain wall motion along high perpendicular anisotropy strips with surface roughness

The domain wall dynamics along thin ferromagnetic strips with high perpendicular magnetocrystalline anisotropy driven by either magnetic fields or spin-polarized currents is theoretically analyzed by means of full micromagnetic simulations and a one-dimensional model, including both surface roughness and thermal effects. At finite temperature, the results show a field dependence of the domain wall velocity in good qualitative agreement with available experimental measurements, indicating a low field, low velocity creep regime, and a high field, linear regime separated by a smeared depinning region. Similar behaviors were also observed under applied currents. In the low current creep regime the velocity-current characteristic does not depend significantly on the non-adiabaticity. At high currents, where the domain wall velocity becomes insensitive to surface pinning, the domain wall shows a precessional behavior even when the non-adiabatic parameter is equal to the Gilbert damping. These analyses confirm the relevance of both thermal fluctuations and surface roughness for the domain wall dynamics, and that complete micromagnetic modeling and one-dimensional studies taking into account these effects are required to interpret the experimental measurements in order to get a better understanding of the origin, the role and the magnitude of the non-adiabaticity.